GHIONE, GIOVANNI
 Distribuzione geografica
Continente #
NA - Nord America 42.531
EU - Europa 41.112
AS - Asia 6.284
AF - Africa 291
SA - Sud America 191
Continente sconosciuto - Info sul continente non disponibili 14
OC - Oceania 12
Totale 90.435
Nazione #
US - Stati Uniti d'America 42.337
GB - Regno Unito 8.285
IT - Italia 8.266
DE - Germania 7.857
FR - Francia 7.041
CN - Cina 2.762
UA - Ucraina 2.725
NL - Olanda 1.366
TR - Turchia 1.063
SE - Svezia 1.043
RU - Federazione Russa 958
IE - Irlanda 916
CH - Svizzera 783
KR - Corea 759
FI - Finlandia 511
SG - Singapore 488
AT - Austria 260
BE - Belgio 260
JP - Giappone 245
IN - India 240
CA - Canada 184
AP - ???statistics.table.value.countryCode.AP??? 124
EU - Europa 120
JO - Giordania 120
SN - Senegal 119
TW - Taiwan 115
RO - Romania 104
MY - Malesia 98
BG - Bulgaria 94
HK - Hong Kong 90
IR - Iran 88
ES - Italia 74
CO - Colombia 65
SD - Sudan 56
BR - Brasile 52
PK - Pakistan 49
IL - Israele 48
VN - Vietnam 47
NO - Norvegia 44
CL - Cile 43
CZ - Repubblica Ceca 42
ZA - Sudafrica 42
AE - Emirati Arabi Uniti 38
GR - Grecia 38
EE - Estonia 23
PL - Polonia 22
PT - Portogallo 22
EG - Egitto 17
AR - Argentina 16
HR - Croazia 16
HU - Ungheria 16
SA - Arabia Saudita 16
NG - Nigeria 15
DK - Danimarca 14
ID - Indonesia 12
TH - Thailandia 12
DZ - Algeria 11
AU - Australia 10
EC - Ecuador 10
LU - Lussemburgo 10
RS - Serbia 10
MX - Messico 9
SI - Slovenia 9
MO - Macao, regione amministrativa speciale della Cina 8
TN - Tunisia 8
UZ - Uzbekistan 7
CI - Costa d'Avorio 6
GH - Ghana 6
LT - Lituania 6
LV - Lettonia 6
IQ - Iraq 5
MD - Moldavia 5
PH - Filippine 5
BD - Bangladesh 4
BY - Bielorussia 4
MA - Marocco 4
SC - Seychelles 4
AL - Albania 3
PE - Perù 3
AM - Armenia 2
KE - Kenya 2
KZ - Kazakistan 2
NZ - Nuova Zelanda 2
SY - Repubblica araba siriana 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BN - Brunei Darussalam 1
BO - Bolivia 1
BT - Bhutan 1
ET - Etiopia 1
GT - Guatemala 1
KW - Kuwait 1
MK - Macedonia 1
NP - Nepal 1
QA - Qatar 1
SK - Slovacchia (Repubblica Slovacca) 1
VE - Venezuela 1
Totale 90.435
Città #
Ashburn 11.642
Southend 7.456
Seattle 5.740
Fairfield 3.210
Chandler 1.859
Turin 1.557
Woodbridge 1.556
Princeton 1.541
Jacksonville 1.433
Ann Arbor 1.432
Houston 1.348
Cambridge 1.165
San Ramon 1.108
Wilmington 1.100
Berlin 945
Beijing 886
Izmir 864
Dublin 845
Torino 829
Bern 690
Bologna 613
Frankfurt 512
San Donato Milanese 507
Helsinki 450
Zhengzhou 417
Boardman 401
Buffalo 392
San Francisco 386
Chicago 384
Shanghai 376
Des Moines 374
Pennsylvania Furnace 363
Saint Petersburg 358
Zaporozhye 357
Baltimore 352
Overberg 328
Milan 303
Singapore 269
Rome 263
Amsterdam 250
Monopoli 249
San Jose 249
Vienna 245
Brussels 226
Padua 215
Hangzhou 206
Redwood City 181
Council Bluffs 172
Mountain View 172
San Diego 153
Guangzhou 146
Norwalk 146
Seoul 144
Malatya 141
Shenzhen 128
Fremont 125
Moscow 124
Valfenera 110
Paris 99
Atlanta 90
Sofia 84
Las Vegas 76
London 75
Toronto 73
Nanjing 72
Bremen 71
Melun 71
Galati 70
Dallas 68
Austin 67
Menlo Park 67
Andover 65
Washington 61
Gilroy 56
Phoenix 51
Lecce 50
Indiana 49
Verona 48
Herkenbosch 45
Putian 45
Redmond 45
Osaka 44
New York 41
Frankfurt Am Main 40
Muizenberg 40
Modena 39
Clearwater 38
San Antonio 38
Tokyo 38
Zhitomir 36
Kansas City 35
Piscataway 35
Falls Church 34
Genova 34
Kriens 34
Fuzhou 33
Los Angeles 33
Ottawa 33
Ningbo 32
Taipei 32
Totale 60.180
Nome #
Accurate large-signal equivalent circuit of surface channel diamond FETs based on the Chalmers model 573
Dispositivi per la microelettronica 569
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 549
A 22W 65% efficiency GaN Doherty power amplifier at 3.5 GHz for WiMAX applications 545
Evaluating the Impedance Field through several transport models: a comparison 535
13-bit GaAs serial-to-parallel converter with compact layout for core-chip applications 509
Semiconductor Devices for High-Speed Optoelectronics 508
An overview on recent developments in RF and microwave power H-terminated diamond MESFET technology 474
A novel smart caliper foam pig for low-cost pipeline inspection—Part A: Design and laboratory characterization 473
Investigating the properties of interfacial layers in planar Schottky contacts on hydrogen-terminated diamond through direct current/small-signal characterization and radial line small-signal modelling 465
A K-band GaAs MMIC Doherty power amplifier for point-to-point microwave backhaul applications 462
X-band wideband 5W GaN MMIC power amplifier with large-signal gain equalization 436
Assessment of thermal instabilities and oscillations in multifinger heterojunction bipolar transistors through a harmonic-balance-based CAD-oriented dynamic stability analysis technique 434
A generalized drift-diffusion model for rectifying Schottky contact simulation 428
3.5 GHz WiMAX GaN Doherty Power Amplifier with 2nd harmonic tuning 425
Ag nanoparticle-based inkjet printed planar transmission lines for RF and microwave applications: considerations on ink composition, nanoparticle size distribution and sintering time 422
When self-consistency makes a difference 422
A new, general-purpose two-dimensional mesh generator for finite elements, generalized finite differences, and moment method applications 419
Physics-Based Mixed-Mode Reverse Recovery Modeling And Optimization Of Si PiN And MPS Fast Recovery Diodes 416
3-3.6 GHz Wideband GaN Doherty power amplifier exploiting output compensation stages 412
Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models 411
Modeling and simulation of noise in transistors under large-signal condition 406
A review on the Surface Integrated Waveguide (SIW): integrating a rectangular waveguide in a planar (M)MIC 397
Behavioral modeling of GaN-based power amplifiers: impact of electrothermal feedback on the model accuracy and identification 397
Evaluating GaN Doherty architectures for 4G Picocells, WiMax and microwave backhaul links 395
Fast steady-state algorithms for the analysis of nonlinear dispersive, distributed planar electromagnetic structures, excited by periodic waveforms 394
A 4-W Doherty Power Amplifier in GaN MMIC Technology for 15-GHz Applications 388
Development of single-stage and Doherty GaN-based hybrid RF power amplifiers for quasi-constant envelope and high PAPR wireless standards 388
Experimental demonstration of a balanced electroabsorption modulated microwave photonic link 382
Two-dimensional finite-boxes analysis of monopolar corona fields including ion diffusion 382
An efficient approach to noise analysis through multidimensional physics-based models 381
Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications 380
Transfer matrix method modelling of inhomogeneous Schottky barrier diodes on silicon carbide 374
Guest Editorial - Special Issue on GaN Electronic Devices 372
A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation 368
Large-signal device simulation in time- and frequency-domain: a comparison 363
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 362
Broad Band Coaxial Directional Couplers for High Power Applications 361
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 360
Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis 351
Bandwidth extension of GaN Doherty power amplifier: Effect on power, efficiency and linearity 351
A 2-watt, 0.15-um GaAs pHEMT stacked amplifier at 22 GHz 350
Simulation and design of OFET RFIDs through an analog/digital physics-based library 347
Simplex algorithm for band structure calculation of noncubic symmetry semiconductors: Application to III-nitride binaries and alloys 346
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 345
Application of Floquet Theory to the Large Signal Stability Analysis of Microwave Amplifiers 342
A novel smart caliper foam pig for low-cost pipeline inspection - Part B: Field test and data processing 342
Revisiting the partial-capacitance approach to the analysis of coplanar transmission lines on multilayered substrates 335
Noise source modeling for cyclostationary noise analysis in large-signal device operation 333
GaN Monolithic Power Amplifiers for Microwave Backhaul Applications 332
A new, simple, test-set for on-wafer characterization of millimeter-wave electro-optic devices 330
Self-Consistent Time-DomainLarge-Signal Model of High-Speed Traveling-Wave ElectroabsorptionModulators 325
On the Substrate Thermal Optimization in SiC-Based Backside-Mounted High-Power GaN FETs 322
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 311
Demonstration of inkjet-printed silver nanoparticle microstrip lines on alumina for RF power modules 309
Analytical formulas for coplanar lines in hybrid and monolithic MICs 307
Cyclostationary noise modeling of radio frequency devices 306
Concurrent Dual-Band SiGe HBT Power Amplifier for Wireless Applications 305
Advanced GaN-based high frequency power amplifiers 305
Assessment of surge current capabilities of SiC-based high-power diodes through physics-based mixed-mode electro-thermal simulations 305
Physics-based modeling of FinFET RF variability 303
RF power performance evaluation of surface channel diamond MESFETs 302
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part II. Ternaryalloys AlGaN, InGaN, and AlInN 300
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part I. Binarycompounds GaN, AlN, and InN 300
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 297
Assessment of silver nanoparticle inkjet-printed microstrip lines for RF and microwave applications2013 IEEE International Wireless Symposium (IWS) 290
Analysis of bias- and illumination- dependent behavior of dye-sensitized solar cells through consistent DC and small-signal physics-based modeling 290
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 289
NOVEL CONCEPTS FOR HIGH-EFFICIENCY LIGHTWEIGHT SPACE SOLAR CELLS 288
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 287
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 287
Numerical Study of Thin-Film Quantum-Dot Solar Cells Combining Selective Doping and Light-Trapping Approaches 287
Consistent static and small-signal physics-based modeling of dye-sensitized solar cells under different illumination conditions 284
A Green's function approach to the analysis of non volatile memory device variability as a function of individual trap position 283
System level characterization and digital predistortion of GaN MMIC Doherty power amplifiers for microwave point-to-point radios 282
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part I: Model derivation 272
Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study 272
GaN MMIC Doherty power amplifier solutions for backhaul microwave links 272
Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems 271
Large-signal stability of symmetric multi-branch power amplifiers exploiting Floquet analysis 270
Theoretical investigation of GaN permeable base transistors for microwave power applications 269
Compact modelling of cyclostationary noise in semiconductor devices: a critical discussion 269
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 268
GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project 266
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 265
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part II: Discussion 263
Active Integrated Antennas for Efficient Mobile Terminals 263
Physics-Based PiN Diode SPICE Model for Power-Circuit Simulation 261
Multi-gate FinFET Mixer Variability assessment through physics-based simulation 260
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 256
Innovative techniques for device large-signal noise simulations 254
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 254
Modeling challenges for high-efficiency visible light-emitting diodes 252
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 251
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions - Part I: Large-Signal Sensitivity 249
Microwave Electronics 249
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 248
Stacked GaAs pHEMTs: Design of a K-band power amplifier and experimental characterization of mismatch effects 247
Impact of sensitizer kinetics on the small-signal characteristics of dye-sensitized solar cells 247
Foreword, Microwave de-embedding - From theory to applications 246
Totale 34.499
Categoria #
all - tutte 237.372
article - articoli 92.370
book - libri 4.976
conference - conferenze 135.161
curatela - curatele 676
other - altro 0
patent - brevetti 485
selected - selezionate 0
volume - volumi 3.704
Totale 474.744


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20209.981 1.016 605 351 1.241 1.173 1.027 1.062 1.303 1.222 524 276 181
2020/20217.034 941 903 325 852 307 746 352 521 536 750 475 326
2021/20226.219 306 497 93 432 616 503 320 206 360 507 1.038 1.341
2022/20237.935 800 1.309 180 580 767 1.077 781 382 747 66 434 812
2023/20242.200 128 201 137 145 197 160 94 144 86 137 386 385
2024/202569 69 0 0 0 0 0 0 0 0 0 0 0
Totale 91.118