PORTO @ Archivio Istituzionale della Ricerca

GHIONE, GIOVANNI
 Distribuzione geografica
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Continente #
NA - Nord America 50.328
EU - Europa 45.313
AS - Asia 24.553
SA - Sud America 2.350
AF - Africa 527
OC - Oceania 22
Continente sconosciuto - Info sul continente non disponibili 18
Totale 123.111
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Nazione #
US - Stati Uniti d'America 49.903
IT - Italia 8.856
GB - Regno Unito 8.413
DE - Germania 8.162
FR - Francia 7.673
SG - Singapore 7.567
CN - Cina 5.299
VN - Vietnam 4.825
UA - Ucraina 2.762
RU - Federazione Russa 2.640
BR - Brasile 1.828
KR - Corea 1.675
NL - Olanda 1.583
TR - Turchia 1.148
HK - Hong Kong 1.147
SE - Svezia 1.067
IE - Irlanda 927
IN - India 822
CH - Svizzera 798
FI - Finlandia 650
AT - Austria 489
JP - Giappone 394
BE - Belgio 282
CA - Canada 277
TW - Taiwan 208
ID - Indonesia 178
PH - Filippine 157
AR - Argentina 152
JO - Giordania 141
IQ - Iraq 139
TH - Thailandia 137
SN - Senegal 129
MY - Malesia 126
AP - ???statistics.table.value.countryCode.AP??? 124
EU - Europa 120
BD - Bangladesh 116
ES - Italia 109
PK - Pakistan 109
RO - Romania 109
BG - Bulgaria 104
CO - Colombia 104
ZA - Sudafrica 99
IR - Iran 91
MX - Messico 87
EC - Ecuador 78
CL - Cile 73
SD - Sudan 56
IL - Israele 55
PL - Polonia 55
AE - Emirati Arabi Uniti 52
CZ - Repubblica Ceca 46
GR - Grecia 46
NO - Norvegia 46
KE - Kenya 44
EG - Egitto 39
MA - Marocco 37
SA - Arabia Saudita 37
UZ - Uzbekistan 35
VE - Venezuela 34
DZ - Algeria 32
PY - Paraguay 31
PT - Portogallo 26
TN - Tunisia 26
EE - Estonia 23
HU - Ungheria 21
NP - Nepal 21
AU - Australia 19
LT - Lituania 19
RS - Serbia 19
KZ - Kazakistan 18
NG - Nigeria 18
AL - Albania 17
AZ - Azerbaigian 17
HR - Croazia 17
BO - Bolivia 16
DK - Danimarca 16
UY - Uruguay 16
PE - Perù 15
DO - Repubblica Dominicana 14
ET - Etiopia 12
SI - Slovenia 12
LU - Lussemburgo 11
LV - Lettonia 10
OM - Oman 10
AM - Armenia 9
SY - Repubblica araba siriana 9
CI - Costa d'Avorio 8
KG - Kirghizistan 8
MO - Macao, regione amministrativa speciale della Cina 8
CR - Costa Rica 7
HN - Honduras 7
PS - Palestinian Territory 7
BB - Barbados 6
BY - Bielorussia 6
GE - Georgia 6
GH - Ghana 6
LB - Libano 6
MD - Moldavia 6
MK - Macedonia 6
GT - Guatemala 5
Totale 123.025
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Città #
Ashburn 12.522
Southend 7.456
Seattle 5.756
Singapore 3.851
Fairfield 3.210
San Jose 2.305
Chandler 1.859
Turin 1.711
Woodbridge 1.558
Princeton 1.541
Jacksonville 1.436
Ann Arbor 1.432
Houston 1.353
Ho Chi Minh City 1.325
Beijing 1.261
Cambridge 1.168
Hanoi 1.140
San Ramon 1.108
Wilmington 1.100
Berlin 948
Hong Kong 925
Boardman 879
Izmir 869
Dublin 852
Torino 829
Santa Clara 716
Bern 690
Bologna 618
Buffalo 552
Helsinki 548
Frankfurt 512
San Donato Milanese 507
Seoul 505
Dallas 499
Lauterbourg 494
Los Angeles 441
Zhengzhou 432
Shanghai 427
San Francisco 409
Chicago 407
Des Moines 379
Milan 370
Pennsylvania Furnace 363
Saint Petersburg 358
Zaporozhye 357
Baltimore 353
Overberg 328
Council Bluffs 321
North Bergen 314
Rome 300
Vienna 271
Amsterdam 270
Monopoli 249
Brussels 248
Da Nang 224
Padua 219
Hangzhou 217
Moscow 190
Hefei 187
Guangzhou 185
Redwood City 181
Mountain View 172
Haiphong 165
Groningen 161
San Diego 156
New York 153
Norwalk 146
São Paulo 146
Shenzhen 144
Malatya 141
Fremont 125
Tokyo 125
Jakarta 123
Paris 116
Frankfurt am Main 114
Atlanta 110
Valfenera 110
London 101
Nuremberg 99
Toronto 97
The Dalles 94
Sofia 88
Nanjing 79
Las Vegas 78
Bremen 71
Melun 71
Galati 70
Washington 69
Austin 67
Menlo Park 67
Munich 66
Andover 65
Phoenix 64
Taipei 58
Biên Hòa 57
Gilroy 56
Yubileyny 56
Bangkok 55
Columbus 54
Hải Dương 54
Totale 75.878
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Nome #
Dispositivi per la microelettronica 804
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 690
A 22W 65% efficiency GaN Doherty power amplifier at 3.5 GHz for WiMAX applications 679
Accurate large-signal equivalent circuit of surface channel diamond FETs based on the Chalmers model 665
13-bit GaAs serial-to-parallel converter with compact layout for core-chip applications 653
Evaluating the Impedance Field through several transport models: a comparison 632
Semiconductor Devices for High-Speed Optoelectronics 611
A K-band GaAs MMIC Doherty power amplifier for point-to-point microwave backhaul applications 587
Ag nanoparticle-based inkjet printed planar transmission lines for RF and microwave applications: considerations on ink composition, nanoparticle size distribution and sintering time 575
X-band wideband 5W GaN MMIC power amplifier with large-signal gain equalization 574
A novel smart caliper foam pig for low-cost pipeline inspection—Part A: Design and laboratory characterization 565
3-3.6 GHz Wideband GaN Doherty power amplifier exploiting output compensation stages 558
3.5 GHz WiMAX GaN Doherty Power Amplifier with 2nd harmonic tuning 556
Evaluating GaN Doherty architectures for 4G Picocells, WiMax and microwave backhaul links 554
An overview on recent developments in RF and microwave power H-terminated diamond MESFET technology 554
Investigating the properties of interfacial layers in planar Schottky contacts on hydrogen-terminated diamond through direct current/small-signal characterization and radial line small-signal modelling 539
When self-consistency makes a difference 531
Assessment of thermal instabilities and oscillations in multifinger heterojunction bipolar transistors through a harmonic-balance-based CAD-oriented dynamic stability analysis technique 523
Development of single-stage and Doherty GaN-based hybrid RF power amplifiers for quasi-constant envelope and high PAPR wireless standards 523
A generalized drift-diffusion model for rectifying Schottky contact simulation 518
A 4-W Doherty Power Amplifier in GaN MMIC Technology for 15-GHz Applications 505
Modeling and simulation of noise in transistors under large-signal condition 503
Behavioral modeling of GaN-based power amplifiers: impact of electrothermal feedback on the model accuracy and identification 502
Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models 501
Physics-Based Mixed-Mode Reverse Recovery Modeling And Optimization Of Si PiN And MPS Fast Recovery Diodes 497
GaN Monolithic Power Amplifiers for Microwave Backhaul Applications 491
A novel smart caliper foam pig for low-cost pipeline inspection - Part B: Field test and data processing 476
A review on the Surface Integrated Waveguide (SIW): integrating a rectangular waveguide in a planar (M)MIC 473
A new, general-purpose two-dimensional mesh generator for finite elements, generalized finite differences, and moment method applications 465
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 464
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 463
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 459
Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications 459
Experimental demonstration of a balanced electroabsorption modulated microwave photonic link 458
Broad Band Coaxial Directional Couplers for High Power Applications 457
Guest Editorial - Special Issue on GaN Electronic Devices 455
A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation 455
An efficient approach to noise analysis through multidimensional physics-based models 453
Large-signal device simulation in time- and frequency-domain: a comparison 452
Fast steady-state algorithms for the analysis of nonlinear dispersive, distributed planar electromagnetic structures, excited by periodic waveforms 444
Transfer matrix method modelling of inhomogeneous Schottky barrier diodes on silicon carbide 444
Bandwidth extension of GaN Doherty power amplifier: Effect on power, efficiency and linearity 439
Two-dimensional finite-boxes analysis of monopolar corona fields including ion diffusion 432
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part II. Ternaryalloys AlGaN, InGaN, and AlInN 423
Simplex algorithm for band structure calculation of noncubic symmetry semiconductors: Application to III-nitride binaries and alloys 420
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part I. Binarycompounds GaN, AlN, and InN 420
Simulation and design of OFET RFIDs through an analog/digital physics-based library 417
Demonstration of inkjet-printed silver nanoparticle microstrip lines on alumina for RF power modules 410
A 2-watt, 0.15-um GaAs pHEMT stacked amplifier at 22 GHz 410
Cyclostationary noise modeling of radio frequency devices 410
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 409
Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis 407
Application of Floquet Theory to the Large Signal Stability Analysis of Microwave Amplifiers 405
RF power performance evaluation of surface channel diamond MESFETs 404
Self-Consistent Time-DomainLarge-Signal Model of High-Speed Traveling-Wave ElectroabsorptionModulators 403
Noise source modeling for cyclostationary noise analysis in large-signal device operation 401
Revisiting the partial-capacitance approach to the analysis of coplanar transmission lines on multilayered substrates 400
On the Substrate Thermal Optimization in SiC-Based Backside-Mounted High-Power GaN FETs 400
A new, simple, test-set for on-wafer characterization of millimeter-wave electro-optic devices 392
Analytical formulas for coplanar lines in hybrid and monolithic MICs 391
Numerical Study of Thin-Film Quantum-Dot Solar Cells Combining Selective Doping and Light-Trapping Approaches 387
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 383
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 383
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 378
Assessment of silver nanoparticle inkjet-printed microstrip lines for RF and microwave applications2013 IEEE International Wireless Symposium (IWS) 377
NOVEL CONCEPTS FOR HIGH-EFFICIENCY LIGHTWEIGHT SPACE SOLAR CELLS 376
Concurrent Dual-Band SiGe HBT Power Amplifier for Wireless Applications 374
Advanced GaN-based high frequency power amplifiers 374
Physics-based modeling of FinFET RF variability 373
Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems 372
Assessment of surge current capabilities of SiC-based high-power diodes through physics-based mixed-mode electro-thermal simulations 368
Modeling challenges for high-efficiency visible light-emitting diodes 366
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part II: Discussion 365
Consistent static and small-signal physics-based modeling of dye-sensitized solar cells under different illumination conditions 365
K-band MMIC power amplifier based on a 3-stacked GaAS pHEMT device 364
Analysis of bias- and illumination- dependent behavior of dye-sensitized solar cells through consistent DC and small-signal physics-based modeling 362
Active Integrated Antennas for Efficient Mobile Terminals 358
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part I: Model derivation 352
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 352
Multi-gate FinFET Mixer Variability assessment through physics-based simulation 352
System level characterization and digital predistortion of GaN MMIC Doherty power amplifiers for microwave point-to-point radios 345
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 345
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions - Part I: Large-Signal Sensitivity 343
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 342
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach 342
Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study 341
A Green's function approach to the analysis of non volatile memory device variability as a function of individual trap position 340
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 339
Analytic determination of the capacitance matrix of planar or cylindrical multiconductor lines on multilayered substrates 339
Large-signal stability of symmetric multi-branch power amplifiers exploiting Floquet analysis 339
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 338
GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project 337
Theoretical investigation of GaN permeable base transistors for microwave power applications 333
Green’s function based simulation of trap-induced device variability 331
Development strategy for GaN-based high-efficiency hybrid medium-power RF amplifiers through low-cost substrate prototyping 331
Self-consistent fully dynamic electro-thermal simulation of power HBTs 330
Modeling elettrotermico auto-consistente di dispositivi HEMT su GaN per applicazioni di potenza 329
GaN MMIC Doherty power amplifier solutions for backhaul microwave links 328
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 328
A comprehensive class A to B power and load-pull characterization of GaN HEMTs on SiC and sapphire substrates 325
Totale 43.666
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Categoria #
all - tutte 333.437
article - articoli 129.768
book - libri 6.939
conference - conferenze 189.803
curatela - curatele 926
other - altro 0
patent - brevetti 668
selected - selezionate 0
volume - volumi 5.333
Totale 666.874
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021801 0 0 0 0 0 0 0 0 0 0 475 326
2021/20226.219 306 497 93 432 616 503 320 206 360 507 1.038 1.341
2022/20237.935 800 1.309 180 580 767 1.077 781 382 747 66 434 812
2023/20242.200 128 201 137 145 197 160 94 144 86 137 386 385
2024/20259.231 136 1.439 520 925 704 440 438 586 1.618 749 731 945
2025/202623.535 1.058 1.269 1.702 2.470 1.624 1.684 3.811 1.877 5.263 2.516 261 0
Totale 123.815