The present paper presents the transistor modeling work achieved in the GaN European project KorriGaN (“Key Organisation for Research in Integrated Circuits in GaN technology”). The KorriGaN project (2005–09) has released 29 GaN circuits such as high-power amplifiers (HPAs), low-noise amplifiers (LNAs), and switches. Modeling is one of the main key to reach successful designs. Therefore, nonlinear models of European GaN HEMT models have been developed. This work deals with characterization tools such as pulsed IV, pulsed [S] parameters, load-pull measurements, and measurement-based methods to perform GaN HEMT compact models parameters extraction. The present paper will describe the transistor modeling activities in KorriGaN for HPA designs (nonlinear models including trapping and/or self-heating effects) and LNA designs (nonlinear models and noise parameters).
GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project / T. REVEYRAND; W. CICCOGNANI; G. GHIONE; O JARDEL; E. LIMITI; A. SERINO; CAMARCHIA V; CAPPELLUTI F.; R. QUÉRÉ. - In: INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES. - ISSN 1759-0787. - STAMPA. - 2:1(2010), pp. 51-61. [10.1017/S1759078710000085]
|Titolo:||GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project|
|Data di pubblicazione:||2010|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1017/S1759078710000085|
|Appare nelle tipologie:||1.1 Articolo in rivista|