Archivio Istituzionale della RicercaIn this paper we discuss the advantages offered by GaN HEMT technology in the design of narrow- and wide-band high efficiency power amplifiers. On one side, we focus on the possibility of applying second harmonic tuning techniques without degradation of power performances, thanks to the GaN devices' high breakdown voltage. On the other hand, we discuss the impact of the high power density and consequent size reduction in GaN devices for the design of wideband power amplifiers. Three design examples are shown, to enforce the given considerations.
Advanced GaN-based high frequency power amplifiers / Camarchia, Vittorio; E., Cipriani; P., Colantonio; Ghione, Giovanni; F., Giannini; Pirola, Marco; Quaglia, Roberto. - STAMPA. - Unico:(2013), pp. 29-32. ((Intervento presentato al convegno 2013 IEEE Wireless Power Transfer (WPT) tenutosi a Perugia (Italy) nel May 2013 [10.1109/WPT.2013.6556874].
Advanced GaN-based high frequency power amplifiers
CAMARCHIA, VITTORIO;GHIONE, GIOVANNI;PIROLA, Marco;QUAGLIA, ROBERTO
2013
Abstract
In this paper we discuss the advantages offered by GaN HEMT technology in the design of narrow- and wide-band high efficiency power amplifiers. On one side, we focus on the possibility of applying second harmonic tuning techniques without degradation of power performances, thanks to the GaN devices' high breakdown voltage. On the other hand, we discuss the impact of the high power density and consequent size reduction in GaN devices for the design of wideband power amplifiers. Three design examples are shown, to enforce the given considerations.
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https://hdl.handle.net/11583/2511275
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