Gallium nitride integrated technology is very promising not only for wireless applications at mobile frequencies (below 6 GHz) but also for network backhaul radiolink deployment, now under deep revision for the incoming 5G generation of mobile communications. This contribution presents three linear power amplifiers realized on 0.25 μ m Gallium Nitride on Silicon Carbide monolithic integrated circuits for microwave backhaul applications: two combined power amplifiers working in the backhaul band around 7 GHz, and a more challenging third one working in the higher 15 GHz band. Architectures and main design steps are described, highlighting the pros and cons of Gallium Nitride with respect to the reference technology which, for these applications, is represented by gallium arsenide.
|Titolo:||GaN Monolithic Power Amplifiers for Microwave Backhaul Applications|
|Data di pubblicazione:||2016|
|Digital Object Identifier (DOI):||10.3390/electronics5020025|
|Appare nelle tipologie:||1.1 Articolo in rivista|