This work investigates carrier transport in tunnel junctions for vertical-cavity surface-emitting lasers (VCSELs). The study is performed with a quantum-corrected semiclassical approach, where tunneling is described rigorously with a nonequilibrium Green's function formalism based on a multiband description of the electronic structure. Validated with experimental results, the proposed approach provides a quantum -kinetic perspective of the tunneling process and paves the way toward a comprehensive theory of VCSELs, bridging the gap between semiclassical and quantum simulations.
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach / Tibaldi, Alberto; GONZALEZ MONTOYA, JESUS ALBERTO; Alasio, MATTEO GIOVANNI CARMELO; Gullino, Alberto; Larsson, Anders; Debernardi, Pierluigi; Goano, Michele; Vallone, MARCO ERNESTO; Ghione, Giovanni; Bellotti, Enrico; Bertazzi, Francesco. - In: PHYSICAL REVIEW APPLIED. - ISSN 2331-7019. - STAMPA. - 14:2(2020), p. 024037. [10.1103/physrevapplied.14.024037]
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach
Alberto Tibaldi;Jesús Alberto Gonzalez Montoya;Matteo Giovanni Carmelo Alasio;Alberto Gullino;Pierluigi Debernardi;Michele Goano;Marco Vallone;Giovanni Ghione;Francesco Bertazzi
2020
Abstract
This work investigates carrier transport in tunnel junctions for vertical-cavity surface-emitting lasers (VCSELs). The study is performed with a quantum-corrected semiclassical approach, where tunneling is described rigorously with a nonequilibrium Green's function formalism based on a multiband description of the electronic structure. Validated with experimental results, the proposed approach provides a quantum -kinetic perspective of the tunneling process and paves the way toward a comprehensive theory of VCSELs, bridging the gap between semiclassical and quantum simulations.File | Dimensione | Formato | |
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https://hdl.handle.net/11583/2844116