Archivio Istituzionale della RicercaThis paper is aimed at exploring efficient approaches for the simulation of Random Telegraph Noise (RTN) in variability analysis of advanced floating gate non-volatile memories. RTN is traced back to randomly occupied localized traps located close to the Si/SiO2interface. While the effect of traps has been investigated previously by means of time-consuming Monte Carlo simulations, in this work we try to exploit an efficient Green Function based analysis, akin to the one implemented in Synopsys SDevice for Random Doping Fluctuations (RDF).
A Green's function approach to the analysis of non volatile memory device variability as a function of individual trap position / Tisseur, Riccardo; DONATI GUERRIERI, Simona; Bonani, Fabrizio; Ghione, Giovanni; Benvenuti, A.; Ghetti, A.. - STAMPA. - (2013). (Intervento presentato al convegno International Conference on Noise and Fluctuations tenutosi a Montpellier, France nel 24-28 June) [10.1109/ICNF.2013.6578931].
A Green's function approach to the analysis of non volatile memory device variability as a function of individual trap position
TISSEUR, RICCARDO;DONATI GUERRIERI, Simona;BONANI, Fabrizio;GHIONE, GIOVANNI;
2013
Abstract
This paper is aimed at exploring efficient approaches for the simulation of Random Telegraph Noise (RTN) in variability analysis of advanced floating gate non-volatile memories. RTN is traced back to randomly occupied localized traps located close to the Si/SiO2interface. While the effect of traps has been investigated previously by means of time-consuming Monte Carlo simulations, in this work we try to exploit an efficient Green Function based analysis, akin to the one implemented in Synopsys SDevice for Random Doping Fluctuations (RDF).
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https://hdl.handle.net/11583/2512706
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