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EnglishThis paper is aimed at exploring efficient approaches for the simulation of Random Telegraph Noise (RTN) in variability analysis of advanced floating gate non-volatile memories. RTN is traced back to randomly occupied localized traps located close to the Si/SiO2interface. While the effect of traps has been investigated previously by means of time-consuming Monte Carlo simulations, in this work we try to exploit an efficient Green Function based analysis, akin to the one implemented in Synopsys SDevice for Random Doping Fluctuations (RDF).
A Green's function approach to the analysis of non volatile memory device variability as a function of individual trap position / Tisseur R.; Donati Guerrieri S.; Bonani F.; Ghione G.; Benvenuti A.; Ghetti A.. - STAMPA. - (2013). ((Intervento presentato al convegno International Conference on Noise and Fluctuations tenutosi a Montpellier, France nel 24-28 June [10.1109/ICNF.2013.6578931].
| Titolo: | A Green's function approach to the analysis of non volatile memory device variability as a function of individual trap position | |
| Autori: | ||
| Data di pubblicazione: | 2013 | |
| Abstract: | This paper is aimed at exploring efficient approaches for the simulation of Random Telegraph Nois...e (RTN) in variability analysis of advanced floating gate non-volatile memories. RTN is traced back to randomly occupied localized traps located close to the Si/SiO2interface. While the effect of traps has been investigated previously by means of time-consuming Monte Carlo simulations, in this work we try to exploit an efficient Green Function based analysis, akin to the one implemented in Synopsys SDevice for Random Doping Fluctuations (RDF). | |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| ICNF13NVM.pdf | 2. Post-print / Author's Accepted Manuscript | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia |
http://hdl.handle.net/11583/2512706
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