An electrical and thermal study of submicron GaN multi-finger permeable base transistors (PBTs) is presented. Carrier transport in the intrinsic finger is studied with drift-diffusion and energy balance models, validated against ensemble Monte Carlo simulation; device performances are optimized through an aggressive geometrical scaling. Non-isothermal analysis of the complete multi-finger structure demonstrates the need for a mobility model whose temperature dependence is not confined to low-field parameters. The potential of GaN PBTs for microwave power applications is finally investigated by evaluating the relevant figures of merit.
Theoretical investigation of GaN permeable base transistors for microwave power applications / CAMARCHIA V.; GOANO M; GHIONE G; BELLOTTI E. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - STAMPA. - 21:1(2006), pp. 13-18. [10.1088/0268-1242/21/1/003]
|Titolo:||Theoretical investigation of GaN permeable base transistors for microwave power applications|
|Data di pubblicazione:||2006|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1088/0268-1242/21/1/003|
|Appare nelle tipologie:||1.1 Articolo in rivista|