This article describes the design, realization, and characterization of a set of hybrid medium-power RF power amplifiers, based on a commercial packaged GaN HEMT and developed through a low-cost microstrip process. Two different design solutions suitable for wireless applications are presented: the first, intended for a constant envelope modulation (with reference to the GSM standard) is a Class F amplifier exhibiting at 900 MHz an efficiency of 72% with an output power of 37.5 dBm; the second, optimized for nonconstant envelope signals with high dynamics (with reference to the UMTS WCDMA standard) is a Doherty amplifier showing, at 2.14 GHz, an efficiency higher than 40% at 6 dB of output power back-off with a maximum output power of 40 dBm.

Development of single-stage and Doherty GaN-based hybrid RF power amplifiers for quasi-constant envelope and high PAPR wireless standards / MORENO RUBIO, JORGE JULIAN; Fang, Jie; Quaglia, Roberto; Camarchia, Vittorio; Pirola, Marco; Ghione, Giovanni. - In: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. - ISSN 0895-2477. - STAMPA. - 54:1(2012), pp. 206-210. [10.1002/mop.26459]

Development of single-stage and Doherty GaN-based hybrid RF power amplifiers for quasi-constant envelope and high PAPR wireless standards

MORENO RUBIO, JORGE JULIAN;FANG, JIE;QUAGLIA, ROBERTO;CAMARCHIA, VITTORIO;PIROLA, Marco;GHIONE, GIOVANNI
2012

Abstract

This article describes the design, realization, and characterization of a set of hybrid medium-power RF power amplifiers, based on a commercial packaged GaN HEMT and developed through a low-cost microstrip process. Two different design solutions suitable for wireless applications are presented: the first, intended for a constant envelope modulation (with reference to the GSM standard) is a Class F amplifier exhibiting at 900 MHz an efficiency of 72% with an output power of 37.5 dBm; the second, optimized for nonconstant envelope signals with high dynamics (with reference to the UMTS WCDMA standard) is a Doherty amplifier showing, at 2.14 GHz, an efficiency higher than 40% at 6 dB of output power back-off with a maximum output power of 40 dBm.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2458625
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