Archivio Istituzionale della RicercaThis paper presents a 33 dBm, 3-stage stacked GaAs pHEMT power amplifier at 22GHz with on-chip matching networks. The circuit topology is explained, and interstage matching techniques are simulated to investigate their aptitude to achieve interstage matching for the individual transistors. Special care was put on the design of a very compact layout with on-chip matching networks. Simulation results are presented and the stacking benefits are outlined.
A 2-watt, 0.15-um GaAs pHEMT stacked amplifier at 22 GHz / Thomas, Fersch; Robert, Weigel; Quaglia, Roberto; Pirola, Marco; Ghione, Giovanni; Camarchia, Vittorio. - STAMPA. - (2014), pp. 1-4. (Intervento presentato al convegno 2014 20th International Conference on Microwaves, Radar and Wireless Communications (MIKON) tenutosi a Gdansk, Poland nel 16-18 June 2014) [10.1109/MIKON.2014.6899880].
A 2-watt, 0.15-um GaAs pHEMT stacked amplifier at 22 GHz
QUAGLIA, ROBERTO;PIROLA, Marco;GHIONE, GIOVANNI;CAMARCHIA, VITTORIO
2014
Abstract
This paper presents a 33 dBm, 3-stage stacked GaAs pHEMT power amplifier at 22GHz with on-chip matching networks. The circuit topology is explained, and interstage matching techniques are simulated to investigate their aptitude to achieve interstage matching for the individual transistors. Special care was put on the design of a very compact layout with on-chip matching networks. Simulation results are presented and the stacking benefits are outlined.
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https://hdl.handle.net/11583/2565737
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