We discuss the design, realization and experimental characterization of a GaN-based hybrid Doherty power amplifier for wideband operation in the 3–3.6 GHz frequency range. The design adopts a novel, simple approach based on wideband compensator networks. Second-harmonic tuning is exploited for the main amplifier at the upper limit of the frequency band, thus improving gain equalization over the amplifier bandwidth. The realized amplifier is based on a packaged GaN HEMT, and shows, at 6 dB of output power back-off, a drain efficiency higher than 38% in the 3–3.6 GHz band, gain around 10 dB, and maximum power between 43dBm and 44 dBm, with saturated efficiency between 55% and 66 %. With respect to the state of the art, we obtain, at a higher frequency, a wideband amplifier with similar performances in terms of bandwidth, output power, and efficiency, through a simpler approach. Moreover, the measured constant maximum output power of 20W suggests that the power utilization factor of the 10 W (Class A) GaN HEMT is excellent over the amplifier band

3-3.6 GHz Wideband GaN Doherty power amplifier exploiting output compensation stages / MORENO RUBIO, JORGE JULIAN; Fang, Jie; Camarchia, Vittorio; Quaglia, Roberto; Pirola, Marco; Ghione, Giovanni. - In: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. - ISSN 0018-9480. - STAMPA. - 60:8(2012), pp. 2543-2548. [10.1109/TMTT.2012.2201745]

3-3.6 GHz Wideband GaN Doherty power amplifier exploiting output compensation stages

MORENO RUBIO, JORGE JULIAN;FANG, JIE;CAMARCHIA, VITTORIO;QUAGLIA, ROBERTO;PIROLA, Marco;GHIONE, GIOVANNI
2012

Abstract

We discuss the design, realization and experimental characterization of a GaN-based hybrid Doherty power amplifier for wideband operation in the 3–3.6 GHz frequency range. The design adopts a novel, simple approach based on wideband compensator networks. Second-harmonic tuning is exploited for the main amplifier at the upper limit of the frequency band, thus improving gain equalization over the amplifier bandwidth. The realized amplifier is based on a packaged GaN HEMT, and shows, at 6 dB of output power back-off, a drain efficiency higher than 38% in the 3–3.6 GHz band, gain around 10 dB, and maximum power between 43dBm and 44 dBm, with saturated efficiency between 55% and 66 %. With respect to the state of the art, we obtain, at a higher frequency, a wideband amplifier with similar performances in terms of bandwidth, output power, and efficiency, through a simpler approach. Moreover, the measured constant maximum output power of 20W suggests that the power utilization factor of the 10 W (Class A) GaN HEMT is excellent over the amplifier band
File in questo prodotto:
File Dimensione Formato  
TMTT-2012-02-0074r1_updated.pdf

accesso aperto

Tipologia: 2. Post-print / Author's Accepted Manuscript
Licenza: PUBBLICO - Tutti i diritti riservati
Dimensione 1.68 MB
Formato Adobe PDF
1.68 MB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2497275
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo