This letter presents an integrated Doherty power amplifier (PA) in 0.25- μm GaN on SiC process. Designed for 15-GHz point-to-point radios, the PA exhibits an output power of 36 ± 0.5 dBm between 13.7 and 15.3 GHz, while at 14.6 GHz, it shows a 6-dB output back-off efficiency higher than 28%. Modulated signal measurements applying digital predistortion demonstrate the compatibility of the amplifier with point-to-point radio requirements. To the best of our knowledge, this PA has the highest back-off efficiency for the 15-GHz band, and is the first GaN Doherty in the Ku-band.
A 4-W Doherty Power Amplifier in GaN MMIC Technology for 15-GHz Applications / Quaglia, Roberto; Camarchia, Vittorio; Jorge, Julian Moreno Rubio; Pirola, Marco; Ghione, Giovanni. - In: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. - ISSN 1531-1309. - STAMPA. - 27:4(2017), pp. 365-367. [10.1109/LMWC.2017.2678440]
A 4-W Doherty Power Amplifier in GaN MMIC Technology for 15-GHz Applications
QUAGLIA, ROBERTO;CAMARCHIA, VITTORIO;PIROLA, Marco;GHIONE, GIOVANNI
2017
Abstract
This letter presents an integrated Doherty power amplifier (PA) in 0.25- μm GaN on SiC process. Designed for 15-GHz point-to-point radios, the PA exhibits an output power of 36 ± 0.5 dBm between 13.7 and 15.3 GHz, while at 14.6 GHz, it shows a 6-dB output back-off efficiency higher than 28%. Modulated signal measurements applying digital predistortion demonstrate the compatibility of the amplifier with point-to-point radio requirements. To the best of our knowledge, this PA has the highest back-off efficiency for the 15-GHz band, and is the first GaN Doherty in the Ku-band.File | Dimensione | Formato | |
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https://hdl.handle.net/11583/2668206
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