This paper presents the physics-based variability analysis of multi-fin double-gate (DG) MOSFETs, representing the core structure of FinFETs for RF applications. The variability of the AC parameters as a function of relevant geometrical and physical parameters, such as the fin width, the fin separation, the source (drain)-gate distance and the doping level is investigated. The analysis exploits a numerically efficient Green’s Function technique [1]-[2], extending to the RF case the linearized approach well known from DC variability analysis. The variability of a single fin DG-MOS transistor is compared to a more realistic structure with two fins and raised source/drain contacts, i.e. including both the active part of the FinFET and a significant amount of passive (parasitic) components at the device level. Although presently implemented in a 2D in-house software, the technique can be easily exported to standard 3D TCAD tools, e.g. for tri-gate FinFETs analysis.

Physics-based modeling of FinFET RF variability / Bughio, AHSIN MURTAZA; DONATI GUERRIERI, Simona; Bonani, Fabrizio; Ghione, Giovanni. - (2016). ((Intervento presentato al convegno European Microwave Integrated Circuits Conference (EUMIC) tenutosi a London, UK nel 3-7 October 2016.

Physics-based modeling of FinFET RF variability

BUGHIO, AHSIN MURTAZA;DONATI GUERRIERI, Simona;BONANI, FABRIZIO;GHIONE, GIOVANNI
2016

Abstract

This paper presents the physics-based variability analysis of multi-fin double-gate (DG) MOSFETs, representing the core structure of FinFETs for RF applications. The variability of the AC parameters as a function of relevant geometrical and physical parameters, such as the fin width, the fin separation, the source (drain)-gate distance and the doping level is investigated. The analysis exploits a numerically efficient Green’s Function technique [1]-[2], extending to the RF case the linearized approach well known from DC variability analysis. The variability of a single fin DG-MOS transistor is compared to a more realistic structure with two fins and raised source/drain contacts, i.e. including both the active part of the FinFET and a significant amount of passive (parasitic) components at the device level. Although presently implemented in a 2D in-house software, the technique can be easily exported to standard 3D TCAD tools, e.g. for tri-gate FinFETs analysis.
File in questo prodotto:
File Dimensione Formato  
Final manuscript.pdf

accesso aperto

Tipologia: 2. Post-print / Author's Accepted Manuscript
Licenza: PUBBLICO - Tutti i diritti riservati
Dimensione 258.8 kB
Formato Adobe PDF
258.8 kB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2653327
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo