PORTO @ Archivio Istituzionale della Ricerca

IANNUZZO, FRANCESCO
 Distribuzione geografica
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Continente #
AS - Asia 3.531
NA - Nord America 1.457
SA - Sud America 1.165
EU - Europa 706
AF - Africa 94
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
Totale 6.957
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Nazione #
VN - Vietnam 1.373
US - Stati Uniti d'America 1.367
BR - Brasile 931
SG - Singapore 879
CN - Cina 453
KR - Corea 316
RU - Federazione Russa 288
IT - Italia 119
HK - Hong Kong 117
AR - Argentina 103
FR - Francia 85
IN - India 83
ID - Indonesia 77
GB - Regno Unito 46
EC - Ecuador 45
MX - Messico 44
BD - Bangladesh 39
JP - Giappone 35
PH - Filippine 33
TH - Thailandia 30
DE - Germania 27
ZA - Sudafrica 27
FI - Finlandia 22
UA - Ucraina 22
CL - Cile 21
MA - Marocco 21
CA - Canada 18
PY - Paraguay 18
CO - Colombia 17
EG - Egitto 17
IQ - Iraq 17
ES - Italia 15
TW - Taiwan 15
VE - Venezuela 13
PL - Polonia 12
PK - Pakistan 11
NL - Olanda 10
UY - Uruguay 10
DK - Danimarca 9
HN - Honduras 7
JO - Giordania 7
KE - Kenya 7
TN - Tunisia 7
JM - Giamaica 6
CH - Svizzera 5
DO - Repubblica Dominicana 5
IE - Irlanda 5
PE - Perù 5
SE - Svezia 5
TR - Turchia 5
UZ - Uzbekistan 5
AL - Albania 4
AZ - Azerbaigian 4
BG - Bulgaria 4
DZ - Algeria 4
KW - Kuwait 4
LT - Lituania 4
NP - Nepal 4
SI - Slovenia 4
AT - Austria 3
ET - Etiopia 3
MN - Mongolia 3
NI - Nicaragua 3
OM - Oman 3
PT - Portogallo 3
RO - Romania 3
AE - Emirati Arabi Uniti 2
AO - Angola 2
AU - Australia 2
BE - Belgio 2
BH - Bahrain 2
BO - Bolivia 2
BW - Botswana 2
CR - Costa Rica 2
GT - Guatemala 2
IL - Israele 2
IR - Iran 2
KZ - Kazakistan 2
NG - Nigeria 2
RS - Serbia 2
SY - Repubblica araba siriana 2
AM - Armenia 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
CW - ???statistics.table.value.countryCode.CW??? 1
CZ - Repubblica Ceca 1
EU - Europa 1
GR - Grecia 1
HR - Croazia 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
MD - Moldavia 1
MK - Macedonia 1
ML - Mali 1
MY - Malesia 1
PR - Porto Rico 1
QA - Qatar 1
SA - Arabia Saudita 1
SV - El Salvador 1
Totale 6.956
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Città #
Singapore 512
Ho Chi Minh City 443
Ashburn 334
Seoul 298
Hanoi 290
San Jose 278
Los Angeles 105
Hong Kong 92
São Paulo 88
Hefei 84
Haiphong 69
Lauterbourg 69
Beijing 57
Buffalo 47
New York 40
Da Nang 38
Dallas 31
Santa Clara 29
Rio de Janeiro 24
Hải Dương 23
Thái Bình 22
Tokyo 22
Turin 22
Biên Hòa 21
Frankfurt am Main 19
Guayaquil 19
Brasília 18
Southend 18
Lappeenranta 17
Belo Horizonte 16
Salvador 16
Curitiba 15
Quito 15
Campinas 14
Porto Alegre 14
Guangzhou 13
Orem 13
Milan 12
Moscow 12
Ninh Bình 12
Warsaw 12
Johannesburg 11
Mexico City 11
Bangkok 10
Bắc Giang 10
Hortolândia 10
Osasco 10
Quận Ba 10
Cairo 9
Dhaka 9
Jakarta 9
Brooklyn 8
Bắc Ninh 8
Can Tho 8
Council Bluffs 8
Goiânia 8
Houston 8
Kyiv 8
Nha Trang 8
Ribeirão Preto 8
Thái Nguyên 8
Vĩnh Long 8
Amman 7
Asunción 7
Baghdad 7
Buenos Aires 7
Canoas 7
Denver 7
Fortaleza 7
Lấp Vò 7
Montevideo 7
Montreal 7
Piracicaba 7
Poplar 7
Santiago 7
Shijiazhuang 7
Sorocaba 7
São Bernardo do Campo 7
Torino 7
Agadir 6
Betim 6
Bình Phước 6
Cape Town 6
Huế 6
Marseille 6
Nairobi 6
Pelotas 6
Phủ Lý 6
Shanghai 6
Uberlândia 6
Vĩnh Tường 6
Anápolis 5
Barra Bonita 5
Barra Mansa 5
Bogotá 5
Bình Dương 5
Campos dos Goytacazes 5
Ha Long 5
Joinville 5
London 5
Totale 3.716
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Nome #
Reliability-Constrained Design of a High-Gain Power Optimizer based on a Real Mission Profile 189
Intelligent Condition Monitoring of Multiple Thermal Degradation of IGBT Modules Based on Case Temperature Matrix 145
Figures-of-Merit Study for Thermal Transient Measurement of SiC MOSFETs 138
Large-Scale Adoption of Silicon Carbide in the Automotive Sector: What is Missing? 138
Role of parasitic capacitances in power MOSFET turn-on switching speed limits: a SiC case study 138
Model-Based Thermal Stress and Lifetime Estimation of DFIG Wind Power Converter 136
Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTs 135
Comparative Analysis of Bond Wire Degradation in Power Modules during DC and AC Power Cycling 130
A Double-Sided Cooling Approach of Discrete SiC MOSFET Device Based on Press-Pack Package 129
A Novel Sensor-Reduction Condition Monitoring Approach for MMC Submodule IGBTs Based on Statistics of Inferred On-State Voltage 124
In-Operation Junction Temperature Extraction for Cascode GaN Devices Based on Turn-Off Delay 123
A Distributed Turn-Off Delay Compensator Scheme for Voltage Balancing of Series-Connected IGBTs 123
Investigation on Saturation Voltage Increment of Multichip Press-Pack IGBTs Under Power Cycling Tests 119
Online Junction Temperature Extraction for Cascode GaN Devices Based on Turn-On Delay 119
Thermal Stress Emulation of Power Devices Subject to DFIG Wind Power Converter 118
Design of a Non-destructive Device Test Platform Capable of Double-pulse Tests and Short-circuit Tests with Fast Overcurrent Protection for Wide Band-gap Devices 117
Application-Oriented Flexible Power Cycling Test System for Power Electronic Components 115
Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters 114
Low Inductive Characterization of Fast-Switching SiC MOSFETs and Active Gate Driver Units 113
Short-Circuit Fault Adaptive Analysis and Protection for SiC MOSFETs 106
Temperature Monitoring of Multi-Chip SiC MOSFET Modules: On-Chip RTDs vs. VSD(T) 103
Analytical Modeling and Sensitivity Analysis on Plasma Extraction Transit Time (PETT) Oscillations in High-Voltage NPT p-i-n Diode 101
Accuracy estimation of low-current voltage drop method for junction temperature monitoring under DC power cycling 99
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 99
Comparison of Junction Temperature Measurement Using the TSEP Method and Optical Fiber Method in IGBT Power Modules without Silicone Gel Removal 99
Comparative Analysis of Power Semiconductor Thermal Stress in DC and AC Power Cycling 99
Factors Affecting Self-Sustained Switching Oscillations of Cascode GaN Devices and Mitigation Strategy during Parameter Design 98
Influence of Temperature on Bond Wire Fatigue of Gate Loops in IGBT Modules under Sinusoidal Vibration Stress 97
Lifetime prediction for press pack IGBT device by considering fretting wear failure 96
Ferrite Beads Design to Improve Turn-off Characteristics of Cascode GaN HEMTs: An Optimum Design Method 96
Short-Circuit Capability Optimization of Press-Pack IGBT by Improving Active Edge Heat Dissipation 96
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 94
Unclamped repetitive stress on 1200 V normally-off SiC JFETs 94
Investigation on the Short-circuit Withstand Capability of Press-pack IGBT modules with Optimized Package Structures 91
Investigating the solder mask defects impact on leakage current on PCB under condensing humidity conditions 90
Junction temperature monitoring for cascode GaN devices using the Si MOSFET's body diode voltage drop 88
Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductors 88
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 88
Power converters for future LHC experiments 86
Multidimensional Mission-Profile-Based Lifetime Estimation Approach for IGBT Modules in MMC-HVdc Application Considering Bidirectional Power Transfer 85
Operation of SiC normally-off JFET at the edges of its safe operating area 85
IGBT RBSOA non-destructive testing methods: Analysis and discussion 82
Mission-profile-based stress analysis of bond-wires in SiC power modules 81
Failure degradation similarities on power SiC MOSFET devices submitted to short-circuit stress and accelerated switching conditions 80
Reliability of WBG, results of a Pre-Scoping Study 79
Application-Oriented Reliability Testing of Power Electronic Components and Converters 79
Improved Drain-source Voltage Detection Method for Short-circuit Protection of SiC MOSFET 78
Thermal Mapping of Power Modules Using Optical Fibers during AC Power Cycling Tests 76
A Fully Coupled Model of Multi-Chip Press-Pack IGBT for Thermo-Mechanical Stress Distribution Prediction 74
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 73
Online monitoring and correction method of threshold voltage in SiC MOSFET power cycling test 73
Optimization of a Bidirectional Boost Converter for Nanogrid Applications 72
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 72
Reliability oriented design of power supplies for high energy physics applications 70
Mechanoluminescence of nylon under high velocity impact 70
Impact of Solder Degradation on VCE of IGBT Module: Experiments and Modeling 68
Developments on DC/DC converters for the LHC experiment upgrades 68
Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices 67
Thermal damage in SiC Schottky diodes induced by SE heavy ions 67
Effects of On-State Snap-back Characteristics on the Current Sharing of Parallel RC-IGBTs 67
A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules 66
Design for Reliability of SiC-MOSFET-Based 1500-V PV Inverters With Variable Gate Resistance 66
Measuring Temperature Swing with Optical Fibers during Power Cycling of Power Components 66
Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression 65
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 65
On-line Junction Temperature and Current Synchronous Extraction for SiC MOSFETs With Electroluminescence Effect 65
Three-Dimensional Safe Operating Area based Short-Circuit Failure Modes Investigation and Classification for High-Power IGBT Modules 65
A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis 64
Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter With Maximum $dI_C/dt$ During Turn-off for High Power Trench Gate/Field-Stop IGBT Modules 64
Mission profile simplification method for reliability analysis of PV converters 63
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules 62
Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs 61
Robustness of MW-Level IGBT modules against gate oscillations under short circuit events 60
Aging Investigation of the Latest Standard Dual Power Modules Using Improved Interconnect Technologies by Power Cycling Test 57
Intrusiveness of Power Device Condition Monitoring Methods: Introducing Figures of Merit for Condition Monitoring 54
Advanced power cycler with intelligent monitoring strategy of IGBT module under test 53
Prediction of the electrochemical migration induced failure on power PCBs under humidity condition A case study 47
On-State Voltage Measurement Circuit for Condition Monitoring of MOSFETs in Resonant Converters 44
Expected Life and Failure Model in IGBT Modules under Vibration-Induced Stress: A Case Study 39
An Energy-Efficient Voltage-Doubler-Based DC–DC Stage for Current Source Inverter Operation 36
Contact Pressure Distribution Measurement for the Press Pack IGBT by Ultrasonic Measurement Method 34
Thermal Effect on Sinusoidal Vibration Fatigue of Bond Wire in IGBT Gate Loop 34
Liquid Paste Interconnects on a Silicon Power Diode 33
Reliability of electronic components and systems with WBG technology 32
High voltage, high performance switch using series connected IGBTs 29
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Totale 7.268
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Categoria #
all - tutte 15.190
article - articoli 11.153
book - libri 0
conference - conferenze 3.975
curatela - curatele 0
other - altro 62
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 30.380
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211 0 0 0 0 0 0 0 0 0 0 0 1
2021/202212 0 1 1 0 1 1 0 0 0 1 4 3
2022/202312 2 2 0 0 0 5 1 0 1 0 1 0
2023/20243 0 0 0 0 0 0 0 1 0 0 1 1
2024/2025551 0 6 0 1 0 0 0 9 3 18 105 409
2025/20266.641 312 426 868 1.439 274 297 498 467 1.386 587 87 0
Totale 7.268