PORTO @ Archivio Istituzionale della Ricerca

IANNUZZO, FRANCESCO
 Distribuzione geografica
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Continente #
AS - Asia 3.705
NA - Nord America 2.570
SA - Sud America 1.169
EU - Europa 983
Continente sconosciuto - Info sul continente non disponibili 321
AF - Africa 94
OC - Oceania 2
Totale 8.844
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Nazione #
US - Stati Uniti d'America 2.417
VN - Vietnam 1.374
BR - Brasile 932
SG - Singapore 925
CN - Cina 467
IT - Italia 374
KR - Corea 317
RU - Federazione Russa 288
BD - Bangladesh 128
HK - Hong Kong 121
AR - Argentina 104
FR - Francia 87
IN - India 85
ID - Indonesia 77
GB - Regno Unito 50
CA - Canada 49
MX - Messico 48
EC - Ecuador 46
JP - Giappone 44
PH - Filippine 35
TH - Thailandia 30
DE - Germania 29
ZA - Sudafrica 27
FI - Finlandia 22
UA - Ucraina 22
CL - Cile 21
MA - Marocco 21
ES - Italia 18
PY - Paraguay 18
CO - Colombia 17
EG - Egitto 17
IQ - Iraq 17
TW - Taiwan 16
VE - Venezuela 14
NL - Olanda 13
PL - Polonia 12
CR - Costa Rica 11
DK - Danimarca 11
PK - Pakistan 11
JM - Giamaica 10
UY - Uruguay 10
HN - Honduras 9
JO - Giordania 7
KE - Kenya 7
TN - Tunisia 7
CH - Svizzera 6
SE - Svezia 6
DO - Repubblica Dominicana 5
GT - Guatemala 5
IE - Irlanda 5
NP - Nepal 5
PE - Perù 5
TR - Turchia 5
UZ - Uzbekistan 5
AL - Albania 4
AZ - Azerbaigian 4
BG - Bulgaria 4
CZ - Repubblica Ceca 4
DZ - Algeria 4
KW - Kuwait 4
LT - Lituania 4
MY - Malesia 4
NI - Nicaragua 4
PT - Portogallo 4
SI - Slovenia 4
TT - Trinidad e Tobago 4
AT - Austria 3
BB - Barbados 3
BH - Bahrain 3
ET - Etiopia 3
MN - Mongolia 3
OM - Oman 3
RO - Romania 3
AE - Emirati Arabi Uniti 2
AO - Angola 2
AU - Australia 2
BE - Belgio 2
BO - Bolivia 2
BW - Botswana 2
IL - Israele 2
IR - Iran 2
KZ - Kazakistan 2
NG - Nigeria 2
RS - Serbia 2
SV - El Salvador 2
SY - Repubblica araba siriana 2
AM - Armenia 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
CW - ???statistics.table.value.countryCode.CW??? 1
EU - Europa 1
GP - Guadalupe 1
GR - Grecia 1
HR - Croazia 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
MD - Moldavia 1
MK - Macedonia 1
ML - Mali 1
Totale 8.521
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Città #
Singapore 533
Ho Chi Minh City 443
San Jose 409
Ashburn 379
Seoul 298
Hanoi 290
Council Bluffs 175
Los Angeles 116
Hong Kong 94
Milan 94
Frisco 92
São Paulo 88
Hefei 84
Haiphong 69
Lauterbourg 69
Beijing 58
Buffalo 55
Santa Clara 54
Rome 51
New York 50
Da Nang 38
Dallas 37
Turin 35
Tokyo 25
Rio de Janeiro 24
Hải Dương 23
Thái Bình 22
Biên Hòa 21
Frankfurt am Main 20
Guayaquil 19
Brasília 18
Southend 18
Boardman 17
Lappeenranta 17
Belo Horizonte 16
Phoenix 16
Salvador 16
Atlanta 15
Curitiba 15
Quito 15
Campinas 14
Guangzhou 14
Orem 14
Porto Alegre 14
Mexico City 13
Warsaw 13
Figino 12
Moscow 12
Ninh Bình 12
Johannesburg 11
Montreal 11
Washington 11
Bangkok 10
Brooklyn 10
Bắc Giang 10
Dhaka 10
Hortolândia 10
Osasco 10
Quận Ba 10
Cairo 9
Denver 9
Jakarta 9
Naples 9
Bắc Ninh 8
Can Tho 8
Goiânia 8
Houston 8
Kyiv 8
London 8
Nha Trang 8
Philadelphia 8
Ribeirão Preto 8
Thái Nguyên 8
Vĩnh Long 8
Xi'an 8
Amman 7
Asunción 7
Baghdad 7
Bari 7
Bologna 7
Buenos Aires 7
Canoas 7
Fortaleza 7
Lấp Vò 7
Montevideo 7
Piracicaba 7
Poplar 7
San José 7
Santiago 7
Shijiazhuang 7
Sorocaba 7
São Bernardo do Campo 7
Torino 7
Toronto 7
Agadir 6
Betim 6
Bình Phước 6
Cape Town 6
Huế 6
Marseille 6
Totale 4.450
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Nome #
Reliability of WBG, results of a Pre-Scoping Study 304
Reliability-Constrained Design of a High-Gain Power Optimizer based on a Real Mission Profile 223
Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTs 177
Intelligent Condition Monitoring of Multiple Thermal Degradation of IGBT Modules Based on Case Temperature Matrix 177
Figures-of-Merit Study for Thermal Transient Measurement of SiC MOSFETs 171
A Novel Sensor-Reduction Condition Monitoring Approach for MMC Submodule IGBTs Based on Statistics of Inferred On-State Voltage 167
Model-Based Thermal Stress and Lifetime Estimation of DFIG Wind Power Converter 163
Online Junction Temperature Extraction for Cascode GaN Devices Based on Turn-On Delay 159
A Double-Sided Cooling Approach of Discrete SiC MOSFET Device Based on Press-Pack Package 157
A Distributed Turn-Off Delay Compensator Scheme for Voltage Balancing of Series-Connected IGBTs 156
Large-Scale Adoption of Silicon Carbide in the Automotive Sector: What is Missing? 152
Comparative Analysis of Bond Wire Degradation in Power Modules during DC and AC Power Cycling 150
Role of parasitic capacitances in power MOSFET turn-on switching speed limits: a SiC case study 145
In-Operation Junction Temperature Extraction for Cascode GaN Devices Based on Turn-Off Delay 144
Investigation on Saturation Voltage Increment of Multichip Press-Pack IGBTs Under Power Cycling Tests 139
Application-Oriented Flexible Power Cycling Test System for Power Electronic Components 132
Thermal Stress Emulation of Power Devices Subject to DFIG Wind Power Converter 127
Design of a Non-destructive Device Test Platform Capable of Double-pulse Tests and Short-circuit Tests with Fast Overcurrent Protection for Wide Band-gap Devices 127
Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters 126
Short-Circuit Fault Adaptive Analysis and Protection for SiC MOSFETs 120
Low Inductive Characterization of Fast-Switching SiC MOSFETs and Active Gate Driver Units 120
Comparative Analysis of Power Semiconductor Thermal Stress in DC and AC Power Cycling 115
Influence of Temperature on Bond Wire Fatigue of Gate Loops in IGBT Modules under Sinusoidal Vibration Stress 113
Short-Circuit Capability Optimization of Press-Pack IGBT by Improving Active Edge Heat Dissipation 112
Accuracy estimation of low-current voltage drop method for junction temperature monitoring under DC power cycling 111
Lifetime prediction for press pack IGBT device by considering fretting wear failure 111
Analytical Modeling and Sensitivity Analysis on Plasma Extraction Transit Time (PETT) Oscillations in High-Voltage NPT p-i-n Diode 111
Comparison of Junction Temperature Measurement Using the TSEP Method and Optical Fiber Method in IGBT Power Modules without Silicone Gel Removal 110
Temperature Monitoring of Multi-Chip SiC MOSFET Modules: On-Chip RTDs vs. VSD(T) 109
An Energy-Efficient Voltage-Doubler-Based DC–DC Stage for Current Source Inverter Operation 108
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 105
Investigating the solder mask defects impact on leakage current on PCB under condensing humidity conditions 104
Ferrite Beads Design to Improve Turn-off Characteristics of Cascode GaN HEMTs: An Optimum Design Method 104
Factors Affecting Self-Sustained Switching Oscillations of Cascode GaN Devices and Mitigation Strategy during Parameter Design 104
Expected Life and Failure Model in IGBT Modules under Vibration-Induced Stress: A Case Study 102
Junction temperature monitoring for cascode GaN devices using the Si MOSFET's body diode voltage drop 100
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 99
Investigation on the Short-circuit Withstand Capability of Press-pack IGBT modules with Optimized Package Structures 98
Unclamped repetitive stress on 1200 V normally-off SiC JFETs 97
Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductors 96
Multidimensional Mission-Profile-Based Lifetime Estimation Approach for IGBT Modules in MMC-HVdc Application Considering Bidirectional Power Transfer 95
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 94
A Fully Coupled Model of Multi-Chip Press-Pack IGBT for Thermo-Mechanical Stress Distribution Prediction 92
Operation of SiC normally-off JFET at the edges of its safe operating area 92
Mission-profile-based stress analysis of bond-wires in SiC power modules 92
Power converters for future LHC experiments 91
Aging Investigation of the Latest Standard Dual Power Modules Using Improved Interconnect Technologies by Power Cycling Test 91
Contact Pressure Distribution Measurement for the Press Pack IGBT by Ultrasonic Measurement Method 89
Application-Oriented Reliability Testing of Power Electronic Components and Converters 88
IGBT RBSOA non-destructive testing methods: Analysis and discussion 88
Impact of Solder Degradation on VCE of IGBT Module: Experiments and Modeling 86
Thermal Mapping of Power Modules Using Optical Fibers during AC Power Cycling Tests 86
Improved Drain-source Voltage Detection Method for Short-circuit Protection of SiC MOSFET 85
Failure degradation similarities on power SiC MOSFET devices submitted to short-circuit stress and accelerated switching conditions 84
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 83
Online monitoring and correction method of threshold voltage in SiC MOSFET power cycling test 83
Optimization of a Bidirectional Boost Converter for Nanogrid Applications 80
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 79
Mechanoluminescence of nylon under high velocity impact 79
Liquid Paste Interconnects on a Silicon Power Diode 78
Thermal Effect on Sinusoidal Vibration Fatigue of Bond Wire in IGBT Gate Loop 76
On-line Junction Temperature and Current Synchronous Extraction for SiC MOSFETs With Electroluminescence Effect 76
Design for Reliability of SiC-MOSFET-Based 1500-V PV Inverters With Variable Gate Resistance 76
Reliability oriented design of power supplies for high energy physics applications 76
Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression 75
A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis 74
A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules 74
Thermal damage in SiC Schottky diodes induced by SE heavy ions 74
Measuring Temperature Swing with Optical Fibers during Power Cycling of Power Components 74
Developments on DC/DC converters for the LHC experiment upgrades 74
Effects of On-State Snap-back Characteristics on the Current Sharing of Parallel RC-IGBTs 74
Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter With Maximum $dI_C/dt$ During Turn-off for High Power Trench Gate/Field-Stop IGBT Modules 73
Three-Dimensional Safe Operating Area based Short-Circuit Failure Modes Investigation and Classification for High-Power IGBT Modules 73
Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices 72
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 71
Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs 69
Reliability of electronic components and systems with WBG technology 69
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules 69
Robustness of MW-Level IGBT modules against gate oscillations under short circuit events 67
Mission profile simplification method for reliability analysis of PV converters 67
On-State Voltage Measurement Circuit for Condition Monitoring of MOSFETs in Resonant Converters 63
Intrusiveness of Power Device Condition Monitoring Methods: Introducing Figures of Merit for Condition Monitoring 63
Advanced power cycler with intelligent monitoring strategy of IGBT module under test 59
Prediction of the electrochemical migration induced failure on power PCBs under humidity condition A case study 54
High voltage, high performance switch using series connected IGBTs 34
A Cauer-Foster Integrated Thermal Network Model for Multi-Chip SiC Power Modules Considering Temperature-Dependent Material Properties 12
null 7
Separation and Validation of Bond-Wire and Solder Layer Failure Modes in IGBT Modules 6
Editorial (ESREF 2022 Special issue) 4
Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules 3
Short Circuit Capability and Performance Degradation of Cascode GaN Devices - A Case Study 2
Voltage Balancing of Series IGBTs in Short-Circuit Conditions 2
Lifetime analysis of two commercial PV converters using multi-year degradation modelling 1
Intelligent DC- and AC Power-Cycling Platform for Power Electronic Components 1
Totale 8.844
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Categoria #
all - tutte 21.059
article - articoli 15.621
book - libri 0
conference - conferenze 5.250
curatela - curatele 0
other - altro 188
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 42.118
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202211 0 0 1 0 1 1 0 0 0 1 4 3
2022/202312 2 2 0 0 0 5 1 0 1 0 1 0
2023/20243 0 0 0 0 0 0 0 1 0 0 1 1
2024/2025551 0 6 0 1 0 0 0 9 3 18 105 409
2025/20267.327 312 426 868 1.439 274 297 498 467 1.386 587 297 476
2026/2027890 359 370 161 0 0 0 0 0 0 0 0 0
Totale 8.844