PORTO @ Archivio Istituzionale della Ricerca

IANNUZZO, FRANCESCO
 Distribuzione geografica
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Continente #
AS - Asia 3.661
NA - Nord America 2.130
SA - Sud America 1.165
EU - Europa 949
Continente sconosciuto - Info sul continente non disponibili 313
AF - Africa 94
OC - Oceania 2
Totale 8.314
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Nazione #
US - Stati Uniti d'America 2.011
VN - Vietnam 1.373
BR - Brasile 931
SG - Singapore 905
CN - Cina 465
IT - Italia 345
KR - Corea 317
RU - Federazione Russa 288
BD - Bangladesh 121
HK - Hong Kong 119
AR - Argentina 103
FR - Francia 87
IN - India 85
ID - Indonesia 77
GB - Regno Unito 50
EC - Ecuador 45
MX - Messico 45
JP - Giappone 38
CA - Canada 37
PH - Filippine 33
TH - Thailandia 30
DE - Germania 28
ZA - Sudafrica 27
FI - Finlandia 22
UA - Ucraina 22
CL - Cile 21
MA - Marocco 21
PY - Paraguay 18
CO - Colombia 17
EG - Egitto 17
ES - Italia 17
IQ - Iraq 17
TW - Taiwan 15
NL - Olanda 13
VE - Venezuela 13
PL - Polonia 12
PK - Pakistan 11
UY - Uruguay 10
DK - Danimarca 9
HN - Honduras 7
JM - Giamaica 7
JO - Giordania 7
KE - Kenya 7
TN - Tunisia 7
SE - Svezia 6
CH - Svizzera 5
CR - Costa Rica 5
DO - Repubblica Dominicana 5
IE - Irlanda 5
NP - Nepal 5
PE - Perù 5
TR - Turchia 5
UZ - Uzbekistan 5
AL - Albania 4
AZ - Azerbaigian 4
BG - Bulgaria 4
CZ - Repubblica Ceca 4
DZ - Algeria 4
KW - Kuwait 4
LT - Lituania 4
PT - Portogallo 4
SI - Slovenia 4
AT - Austria 3
ET - Etiopia 3
GT - Guatemala 3
MN - Mongolia 3
NI - Nicaragua 3
OM - Oman 3
RO - Romania 3
AE - Emirati Arabi Uniti 2
AO - Angola 2
AU - Australia 2
BB - Barbados 2
BE - Belgio 2
BH - Bahrain 2
BO - Bolivia 2
BW - Botswana 2
IL - Israele 2
IR - Iran 2
KZ - Kazakistan 2
MY - Malesia 2
NG - Nigeria 2
RS - Serbia 2
SV - El Salvador 2
SY - Repubblica araba siriana 2
AM - Armenia 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
CW - ???statistics.table.value.countryCode.CW??? 1
EU - Europa 1
GP - Guadalupe 1
GR - Grecia 1
HR - Croazia 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
MD - Moldavia 1
MK - Macedonia 1
ML - Mali 1
PR - Porto Rico 1
Totale 8.000
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Città #
Singapore 517
Ho Chi Minh City 443
San Jose 373
Ashburn 372
Seoul 298
Hanoi 290
Los Angeles 113
Hong Kong 94
Frisco 92
Milan 92
São Paulo 88
Hefei 84
Council Bluffs 82
Haiphong 69
Lauterbourg 69
Beijing 57
Buffalo 52
New York 49
Rome 49
Santa Clara 49
Da Nang 38
Dallas 35
Turin 35
Rio de Janeiro 24
Hải Dương 23
Tokyo 23
Thái Bình 22
Biên Hòa 21
Frankfurt am Main 19
Guayaquil 19
Brasília 18
Southend 18
Boardman 17
Lappeenranta 17
Belo Horizonte 16
Salvador 16
Atlanta 15
Curitiba 15
Quito 15
Campinas 14
Porto Alegre 14
Guangzhou 13
Orem 13
Mexico City 12
Moscow 12
Ninh Bình 12
Warsaw 12
Figino 11
Johannesburg 11
Bangkok 10
Brooklyn 10
Bắc Giang 10
Hortolândia 10
Montreal 10
Osasco 10
Quận Ba 10
Cairo 9
Denver 9
Dhaka 9
Jakarta 9
Bắc Ninh 8
Can Tho 8
Goiânia 8
Houston 8
Kyiv 8
London 8
Naples 8
Nha Trang 8
Ribeirão Preto 8
Thái Nguyên 8
Vĩnh Long 8
Xi'an 8
Amman 7
Asunción 7
Baghdad 7
Buenos Aires 7
Canoas 7
Fortaleza 7
Lấp Vò 7
Montevideo 7
Piracicaba 7
Poplar 7
Santiago 7
Shijiazhuang 7
Sorocaba 7
São Bernardo do Campo 7
Torino 7
Toronto 7
Washington 7
Agadir 6
Betim 6
Bologna 6
Bình Phước 6
Cape Town 6
Huế 6
Marseille 6
Nairobi 6
North Charleston 6
Pelotas 6
Phủ Lý 6
Totale 4.249
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Nome #
Reliability of WBG, results of a Pre-Scoping Study 301
Reliability-Constrained Design of a High-Gain Power Optimizer based on a Real Mission Profile 209
Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTs 167
Intelligent Condition Monitoring of Multiple Thermal Degradation of IGBT Modules Based on Case Temperature Matrix 164
Figures-of-Merit Study for Thermal Transient Measurement of SiC MOSFETs 162
A Novel Sensor-Reduction Condition Monitoring Approach for MMC Submodule IGBTs Based on Statistics of Inferred On-State Voltage 156
Model-Based Thermal Stress and Lifetime Estimation of DFIG Wind Power Converter 150
Online Junction Temperature Extraction for Cascode GaN Devices Based on Turn-On Delay 146
A Distributed Turn-Off Delay Compensator Scheme for Voltage Balancing of Series-Connected IGBTs 145
Large-Scale Adoption of Silicon Carbide in the Automotive Sector: What is Missing? 143
Comparative Analysis of Bond Wire Degradation in Power Modules during DC and AC Power Cycling 141
A Double-Sided Cooling Approach of Discrete SiC MOSFET Device Based on Press-Pack Package 140
Role of parasitic capacitances in power MOSFET turn-on switching speed limits: a SiC case study 140
In-Operation Junction Temperature Extraction for Cascode GaN Devices Based on Turn-Off Delay 132
Investigation on Saturation Voltage Increment of Multichip Press-Pack IGBTs Under Power Cycling Tests 128
Thermal Stress Emulation of Power Devices Subject to DFIG Wind Power Converter 126
Design of a Non-destructive Device Test Platform Capable of Double-pulse Tests and Short-circuit Tests with Fast Overcurrent Protection for Wide Band-gap Devices 123
Application-Oriented Flexible Power Cycling Test System for Power Electronic Components 121
Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters 120
Low Inductive Characterization of Fast-Switching SiC MOSFETs and Active Gate Driver Units 117
Short-Circuit Fault Adaptive Analysis and Protection for SiC MOSFETs 116
Comparative Analysis of Power Semiconductor Thermal Stress in DC and AC Power Cycling 110
Accuracy estimation of low-current voltage drop method for junction temperature monitoring under DC power cycling 108
Analytical Modeling and Sensitivity Analysis on Plasma Extraction Transit Time (PETT) Oscillations in High-Voltage NPT p-i-n Diode 108
Short-Circuit Capability Optimization of Press-Pack IGBT by Improving Active Edge Heat Dissipation 108
Lifetime prediction for press pack IGBT device by considering fretting wear failure 107
Temperature Monitoring of Multi-Chip SiC MOSFET Modules: On-Chip RTDs vs. VSD(T) 107
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 104
Ferrite Beads Design to Improve Turn-off Characteristics of Cascode GaN HEMTs: An Optimum Design Method 103
Comparison of Junction Temperature Measurement Using the TSEP Method and Optical Fiber Method in IGBT Power Modules without Silicone Gel Removal 102
Factors Affecting Self-Sustained Switching Oscillations of Cascode GaN Devices and Mitigation Strategy during Parameter Design 102
Investigating the solder mask defects impact on leakage current on PCB under condensing humidity conditions 100
Influence of Temperature on Bond Wire Fatigue of Gate Loops in IGBT Modules under Sinusoidal Vibration Stress 100
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 98
An Energy-Efficient Voltage-Doubler-Based DC–DC Stage for Current Source Inverter Operation 96
Unclamped repetitive stress on 1200 V normally-off SiC JFETs 96
Multidimensional Mission-Profile-Based Lifetime Estimation Approach for IGBT Modules in MMC-HVdc Application Considering Bidirectional Power Transfer 94
Investigation on the Short-circuit Withstand Capability of Press-pack IGBT modules with Optimized Package Structures 94
Junction temperature monitoring for cascode GaN devices using the Si MOSFET's body diode voltage drop 92
Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductors 91
Operation of SiC normally-off JFET at the edges of its safe operating area 90
Aging Investigation of the Latest Standard Dual Power Modules Using Improved Interconnect Technologies by Power Cycling Test 90
Power converters for future LHC experiments 89
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 89
IGBT RBSOA non-destructive testing methods: Analysis and discussion 87
Mission-profile-based stress analysis of bond-wires in SiC power modules 85
Application-Oriented Reliability Testing of Power Electronic Components and Converters 85
Improved Drain-source Voltage Detection Method for Short-circuit Protection of SiC MOSFET 84
A Fully Coupled Model of Multi-Chip Press-Pack IGBT for Thermo-Mechanical Stress Distribution Prediction 83
Failure degradation similarities on power SiC MOSFET devices submitted to short-circuit stress and accelerated switching conditions 83
Thermal Mapping of Power Modules Using Optical Fibers during AC Power Cycling Tests 82
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 80
Online monitoring and correction method of threshold voltage in SiC MOSFET power cycling test 79
Impact of Solder Degradation on VCE of IGBT Module: Experiments and Modeling 77
Optimization of a Bidirectional Boost Converter for Nanogrid Applications 77
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 76
Mechanoluminescence of nylon under high velocity impact 76
Reliability oriented design of power supplies for high energy physics applications 74
Contact Pressure Distribution Measurement for the Press Pack IGBT by Ultrasonic Measurement Method 72
Expected Life and Failure Model in IGBT Modules under Vibration-Induced Stress: A Case Study 72
A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules 72
Thermal damage in SiC Schottky diodes induced by SE heavy ions 72
Three-Dimensional Safe Operating Area based Short-Circuit Failure Modes Investigation and Classification for High-Power IGBT Modules 72
Design for Reliability of SiC-MOSFET-Based 1500-V PV Inverters With Variable Gate Resistance 72
Developments on DC/DC converters for the LHC experiment upgrades 72
Measuring Temperature Swing with Optical Fibers during Power Cycling of Power Components 71
Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression 70
A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis 70
Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices 70
On-line Junction Temperature and Current Synchronous Extraction for SiC MOSFETs With Electroluminescence Effect 70
Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter With Maximum $dI_C/dt$ During Turn-off for High Power Trench Gate/Field-Stop IGBT Modules 70
Effects of On-State Snap-back Characteristics on the Current Sharing of Parallel RC-IGBTs 70
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 68
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules 67
Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs 66
Mission profile simplification method for reliability analysis of PV converters 65
Liquid Paste Interconnects on a Silicon Power Diode 64
Robustness of MW-Level IGBT modules against gate oscillations under short circuit events 64
Thermal Effect on Sinusoidal Vibration Fatigue of Bond Wire in IGBT Gate Loop 62
Reliability of electronic components and systems with WBG technology 58
Advanced power cycler with intelligent monitoring strategy of IGBT module under test 57
Intrusiveness of Power Device Condition Monitoring Methods: Introducing Figures of Merit for Condition Monitoring 57
Prediction of the electrochemical migration induced failure on power PCBs under humidity condition A case study 50
On-State Voltage Measurement Circuit for Condition Monitoring of MOSFETs in Resonant Converters 50
High voltage, high performance switch using series connected IGBTs 31
null 7
Totale 8.314
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Categoria #
all - tutte 19.152
article - articoli 14.160
book - libri 0
conference - conferenze 4.832
curatela - curatele 0
other - altro 160
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 38.304
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202212 0 1 1 0 1 1 0 0 0 1 4 3
2022/202312 2 2 0 0 0 5 1 0 1 0 1 0
2023/20243 0 0 0 0 0 0 0 1 0 0 1 1
2024/2025551 0 6 0 1 0 0 0 9 3 18 105 409
2025/20267.327 312 426 868 1.439 274 297 498 467 1.386 587 297 476
2026/2027360 359 1 0 0 0 0 0 0 0 0 0 0
Totale 8.314