PORTO @ Archivio Istituzionale della Ricerca

IANNUZZO, FRANCESCO
 Distribuzione geografica
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Continente #
AS - Asia 1.288
SA - Sud America 717
NA - Nord America 230
EU - Europa 166
AF - Africa 46
Continente sconosciuto - Info sul continente non disponibili 1
Totale 2.448
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Nazione #
BR - Brasile 554
VN - Vietnam 332
SG - Singapore 325
CN - Cina 312
KR - Corea 208
US - Stati Uniti d'America 192
AR - Argentina 71
IT - Italia 54
ID - Indonesia 48
EC - Ecuador 30
MX - Messico 25
GB - Regno Unito 21
FI - Finlandia 18
BD - Bangladesh 16
PY - Paraguay 15
CO - Colombia 14
MA - Marocco 14
UA - Ucraina 14
CL - Cile 13
ZA - Sudafrica 13
RU - Federazione Russa 12
EG - Egitto 11
HK - Hong Kong 10
VE - Venezuela 9
DE - Germania 8
IQ - Iraq 8
FR - Francia 7
UY - Uruguay 7
DK - Danimarca 5
HN - Honduras 5
CH - Svizzera 4
IN - India 4
NL - Olanda 4
BG - Bulgaria 3
CA - Canada 3
DO - Repubblica Dominicana 3
IE - Irlanda 3
PK - Pakistan 3
PL - Polonia 3
BO - Bolivia 2
BW - Botswana 2
ES - Italia 2
JO - Giordania 2
KZ - Kazakistan 2
PE - Perù 2
PH - Filippine 2
TN - Tunisia 2
TR - Turchia 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
AM - Armenia 1
AZ - Azerbaigian 1
BH - Bahrain 1
BY - Bielorussia 1
DZ - Algeria 1
EU - Europa 1
IL - Israele 1
IR - Iran 1
JP - Giappone 1
KE - Kenya 1
KW - Kuwait 1
LT - Lituania 1
LV - Lettonia 1
MK - Macedonia 1
ML - Mali 1
MN - Mongolia 1
NG - Nigeria 1
NP - Nepal 1
QA - Qatar 1
RO - Romania 1
RS - Serbia 1
SE - Svezia 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
TT - Trinidad e Tobago 1
UZ - Uzbekistan 1
Totale 2.448
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Città #
Singapore 212
Seoul 205
Ho Chi Minh City 125
Hefei 83
Hanoi 63
São Paulo 47
Beijing 44
Los Angeles 39
Ashburn 35
Buffalo 32
Dallas 24
Haiphong 20
Southend 18
Lappeenranta 16
Rio de Janeiro 15
Salvador 15
Turin 15
Belo Horizonte 12
Thái Bình 12
Biên Hòa 11
Curitiba 11
Quito 11
Guangzhou 10
Guayaquil 10
Hong Kong 10
Da Nang 9
Brasília 8
Porto Alegre 8
Cairo 7
Shijiazhuang 7
Torino 7
Asunción 6
Buenos Aires 6
Goiânia 6
Johannesburg 6
Ninh Bình 6
Osasco 6
Ribeirão Preto 6
Barra Mansa 5
Bình Dương 5
Can Tho 5
Canoas 5
Mexico City 5
Montevideo 5
Serra 5
Sorocaba 5
São José 5
Tianjin 5
Uberlândia 5
Aparecida de Goiânia 4
Baghdad 4
Bauru 4
Bogotá 4
Bắc Giang 4
Campinas 4
Hortolândia 4
Huế 4
Jakarta 4
Joinville 4
Kyiv 4
Lấp Vò 4
Milan 4
Piracicaba 4
Rio Claro 4
San Miguel de Tucumán 4
Sevelen 4
Shanghai 4
Vũng Tàu 4
Aalborg 3
Antony 3
Anápolis 3
Betim 3
Brooklyn 3
Bình An 3
Camaçari 3
Dhaka 3
Dublin 3
Fortaleza 3
Franca 3
Hải Dương 3
Jundiaí 3
Luziânia 3
Maceió 3
Mar del Plata 3
Phủ Lý 3
Princeton 3
Quận Chín 3
Recife 3
Resistencia 3
Santa Clara 3
Santiago 3
Santo André 3
Sumaré 3
São Bernardo do Campo 3
São Gonçalo 3
Teresina 3
Thái Nguyên 3
Vĩnh Tường 3
Warsaw 3
Agadir 2
Totale 1.409
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Nome #
Role of parasitic capacitances in power MOSFET turn-on switching speed limits: a SiC case study 94
Reliability-Constrained Design of a High-Gain Power Optimizer based on a Real Mission Profile 64
Thermal Stress Emulation of Power Devices Subject to DFIG Wind Power Converter 52
Analytical Modeling and Sensitivity Analysis on Plasma Extraction Transit Time (PETT) Oscillations in High-Voltage NPT p-i-n Diode 49
Accuracy estimation of low-current voltage drop method for junction temperature monitoring under DC power cycling 48
Model-Based Thermal Stress and Lifetime Estimation of DFIG Wind Power Converter 47
Figures-of-Merit Study for Thermal Transient Measurement of SiC MOSFETs 47
A Distributed Turn-Off Delay Compensator Scheme for Voltage Balancing of Series-Connected IGBTs 46
Investigation on the Short-circuit Withstand Capability of Press-pack IGBT modules with Optimized Package Structures 46
Junction temperature monitoring for cascode GaN devices using the Si MOSFET's body diode voltage drop 45
Application-Oriented Flexible Power Cycling Test System for Power Electronic Components 45
Online Junction Temperature Extraction for Cascode GaN Devices Based on Turn-On Delay 45
In-Operation Junction Temperature Extraction for Cascode GaN Devices Based on Turn-Off Delay 44
Short-Circuit Capability Optimization of Press-Pack IGBT by Improving Active Edge Heat Dissipation 44
Multidimensional Mission-Profile-Based Lifetime Estimation Approach for IGBT Modules in MMC-HVdc Application Considering Bidirectional Power Transfer 43
Short-Circuit Fault Adaptive Analysis and Protection for SiC MOSFETs 43
Factors Affecting Self-Sustained Switching Oscillations of Cascode GaN Devices and Mitigation Strategy during Parameter Design 43
Design of a Non-destructive Device Test Platform Capable of Double-pulse Tests and Short-circuit Tests with Fast Overcurrent Protection for Wide Band-gap Devices 43
Comparative Analysis of Bond Wire Degradation in Power Modules during DC and AC Power Cycling 42
A Double-Sided Cooling Approach of Discrete SiC MOSFET Device Based on Press-Pack Package 42
Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters 42
Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTs 42
Lifetime prediction for press pack IGBT device by considering fretting wear failure 41
Low Inductive Characterization of Fast-Switching SiC MOSFETs and Active Gate Driver Units 41
Comparison of Junction Temperature Measurement Using the TSEP Method and Optical Fiber Method in IGBT Power Modules without Silicone Gel Removal 40
Influence of Temperature on Bond Wire Fatigue of Gate Loops in IGBT Modules under Sinusoidal Vibration Stress 40
Failure degradation similarities on power SiC MOSFET devices submitted to short-circuit stress and accelerated switching conditions 40
Temperature Monitoring of Multi-Chip SiC MOSFET Modules: On-Chip RTDs vs. VSD(T) 39
Optimization of a Bidirectional Boost Converter for Nanogrid Applications 39
Large-Scale Adoption of Silicon Carbide in the Automotive Sector: What is Missing? 39
Investigating the solder mask defects impact on leakage current on PCB under condensing humidity conditions 38
Intelligent Condition Monitoring of Multiple Thermal Degradation of IGBT Modules Based on Case Temperature Matrix 38
Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductors 38
A Novel Sensor-Reduction Condition Monitoring Approach for MMC Submodule IGBTs Based on Statistics of Inferred On-State Voltage 37
Investigation on Saturation Voltage Increment of Multichip Press-Pack IGBTs Under Power Cycling Tests 37
Comparative Analysis of Power Semiconductor Thermal Stress in DC and AC Power Cycling 36
A Fully Coupled Model of Multi-Chip Press-Pack IGBT for Thermo-Mechanical Stress Distribution Prediction 35
Reliability of WBG, results of a Pre-Scoping Study 34
Ferrite Beads Design to Improve Turn-off Characteristics of Cascode GaN HEMTs: An Optimum Design Method 34
Thermal Mapping of Power Modules Using Optical Fibers during AC Power Cycling Tests 34
Improved Drain-source Voltage Detection Method for Short-circuit Protection of SiC MOSFET 32
Three-Dimensional Safe Operating Area based Short-Circuit Failure Modes Investigation and Classification for High-Power IGBT Modules 32
Power converters for future LHC experiments 31
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 31
Design for Reliability of SiC-MOSFET-Based 1500-V PV Inverters With Variable Gate Resistance 31
Measuring Temperature Swing with Optical Fibers during Power Cycling of Power Components 31
Application-Oriented Reliability Testing of Power Electronic Components and Converters 31
Effects of On-State Snap-back Characteristics on the Current Sharing of Parallel RC-IGBTs 31
Online monitoring and correction method of threshold voltage in SiC MOSFET power cycling test 29
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 29
A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules 29
On-line Junction Temperature and Current Synchronous Extraction for SiC MOSFETs With Electroluminescence Effect 29
Reliability oriented design of power supplies for high energy physics applications 29
Mechanoluminescence of nylon under high velocity impact 28
A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis 27
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 27
Impact of Solder Degradation on VCE of IGBT Module: Experiments and Modeling 27
Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter With Maximum $dI_C/dt$ During Turn-off for High Power Trench Gate/Field-Stop IGBT Modules 27
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules 27
Thermal damage in SiC Schottky diodes induced by SE heavy ions 27
Aging Investigation of the Latest Standard Dual Power Modules Using Improved Interconnect Technologies by Power Cycling Test 27
Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices 26
Developments on DC/DC converters for the LHC experiment upgrades 26
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 25
Mission-profile-based stress analysis of bond-wires in SiC power modules 25
Advanced power cycler with intelligent monitoring strategy of IGBT module under test 25
Operation of SiC normally-off JFET at the edges of its safe operating area 24
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 24
IGBT RBSOA non-destructive testing methods: Analysis and discussion 24
Mission profile simplification method for reliability analysis of PV converters 24
Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression 23
Prediction of the electrochemical migration induced failure on power PCBs under humidity condition A case study 23
Robustness of MW-Level IGBT modules against gate oscillations under short circuit events 23
Intrusiveness of Power Device Condition Monitoring Methods: Introducing Figures of Merit for Condition Monitoring 23
Unclamped repetitive stress on 1200 V normally-off SiC JFETs 23
Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs 22
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 22
null 7
High voltage, high performance switch using series connected IGBTs 1
Totale 2.738
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Categoria #
all - tutte 7.467
article - articoli 5.395
book - libri 0
conference - conferenze 2.072
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 14.934
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202110 0 0 0 0 0 0 0 0 2 7 0 1
2021/202212 0 1 1 0 1 1 0 0 0 1 4 3
2022/202312 2 2 0 0 0 5 1 0 1 0 1 0
2023/20243 0 0 0 0 0 0 0 1 0 0 1 1
2024/2025551 0 6 0 1 0 0 0 9 3 18 105 409
2025/20262.111 312 426 868 505 0 0 0 0 0 0 0 0
Totale 2.738