PORTO @ Archivio Istituzionale della Ricerca

IANNUZZO, FRANCESCO
 Distribuzione geografica
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Continente #
AS - Asia 3.569
NA - Nord America 1.566
SA - Sud America 1.165
EU - Europa 730
AF - Africa 94
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
Totale 7.128
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Nazione #
US - Stati Uniti d'America 1.468
VN - Vietnam 1.373
BR - Brasile 931
SG - Singapore 880
CN - Cina 455
KR - Corea 317
RU - Federazione Russa 288
IT - Italia 139
HK - Hong Kong 117
AR - Argentina 103
FR - Francia 85
IN - India 83
ID - Indonesia 77
BD - Bangladesh 71
GB - Regno Unito 46
EC - Ecuador 45
MX - Messico 45
JP - Giappone 36
PH - Filippine 33
TH - Thailandia 30
DE - Germania 27
ZA - Sudafrica 27
CA - Canada 22
FI - Finlandia 22
UA - Ucraina 22
CL - Cile 21
MA - Marocco 21
PY - Paraguay 18
CO - Colombia 17
EG - Egitto 17
IQ - Iraq 17
ES - Italia 15
TW - Taiwan 15
VE - Venezuela 13
PL - Polonia 12
NL - Olanda 11
PK - Pakistan 11
UY - Uruguay 10
DK - Danimarca 9
HN - Honduras 7
JO - Giordania 7
KE - Kenya 7
TN - Tunisia 7
JM - Giamaica 6
CH - Svizzera 5
DO - Repubblica Dominicana 5
IE - Irlanda 5
PE - Perù 5
SE - Svezia 5
TR - Turchia 5
UZ - Uzbekistan 5
AL - Albania 4
AZ - Azerbaigian 4
BG - Bulgaria 4
CZ - Repubblica Ceca 4
DZ - Algeria 4
KW - Kuwait 4
LT - Lituania 4
NP - Nepal 4
SI - Slovenia 4
AT - Austria 3
CR - Costa Rica 3
ET - Etiopia 3
GT - Guatemala 3
MN - Mongolia 3
NI - Nicaragua 3
OM - Oman 3
PT - Portogallo 3
RO - Romania 3
AE - Emirati Arabi Uniti 2
AO - Angola 2
AU - Australia 2
BE - Belgio 2
BH - Bahrain 2
BO - Bolivia 2
BW - Botswana 2
IL - Israele 2
IR - Iran 2
KZ - Kazakistan 2
MY - Malesia 2
NG - Nigeria 2
RS - Serbia 2
SY - Repubblica araba siriana 2
AM - Armenia 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
CW - ???statistics.table.value.countryCode.CW??? 1
EU - Europa 1
GP - Guadalupe 1
GR - Grecia 1
HR - Croazia 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
MD - Moldavia 1
MK - Macedonia 1
ML - Mali 1
PR - Porto Rico 1
QA - Qatar 1
SA - Arabia Saudita 1
Totale 7.126
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Città #
Singapore 513
Ho Chi Minh City 443
Ashburn 336
Seoul 298
Hanoi 290
San Jose 279
Los Angeles 106
Hong Kong 92
São Paulo 88
Hefei 84
Haiphong 69
Lauterbourg 69
Frisco 61
Beijing 57
Buffalo 49
New York 43
Da Nang 38
Santa Clara 34
Dallas 32
Rio de Janeiro 24
Hải Dương 23
Thái Bình 22
Tokyo 22
Turin 22
Biên Hòa 21
Frankfurt am Main 19
Guayaquil 19
Brasília 18
Southend 18
Lappeenranta 17
Belo Horizonte 16
Salvador 16
Curitiba 15
Quito 15
Campinas 14
Council Bluffs 14
Milan 14
Porto Alegre 14
Guangzhou 13
Orem 13
Mexico City 12
Moscow 12
Ninh Bình 12
Warsaw 12
Johannesburg 11
Bangkok 10
Bắc Giang 10
Hortolândia 10
Osasco 10
Quận Ba 10
Cairo 9
Dhaka 9
Jakarta 9
Brooklyn 8
Bắc Ninh 8
Can Tho 8
Goiânia 8
Houston 8
Kyiv 8
Nha Trang 8
Ribeirão Preto 8
Thái Nguyên 8
Vĩnh Long 8
Amman 7
Asunción 7
Baghdad 7
Buenos Aires 7
Canoas 7
Denver 7
Fortaleza 7
Lấp Vò 7
Montevideo 7
Montreal 7
Piracicaba 7
Poplar 7
Santiago 7
Shijiazhuang 7
Sorocaba 7
São Bernardo do Campo 7
Torino 7
Agadir 6
Betim 6
Bình Phước 6
Cape Town 6
Huế 6
Marseille 6
Nairobi 6
Pelotas 6
Phủ Lý 6
Rome 6
Shanghai 6
Uberlândia 6
Vĩnh Tường 6
Anápolis 5
Barra Bonita 5
Barra Mansa 5
Bogotá 5
Bình Dương 5
Campos dos Goytacazes 5
Charlotte 5
Totale 3.798
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Nome #
Reliability-Constrained Design of a High-Gain Power Optimizer based on a Real Mission Profile 189
Intelligent Condition Monitoring of Multiple Thermal Degradation of IGBT Modules Based on Case Temperature Matrix 152
Figures-of-Merit Study for Thermal Transient Measurement of SiC MOSFETs 145
Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTs 140
Model-Based Thermal Stress and Lifetime Estimation of DFIG Wind Power Converter 138
Large-Scale Adoption of Silicon Carbide in the Automotive Sector: What is Missing? 138
Role of parasitic capacitances in power MOSFET turn-on switching speed limits: a SiC case study 138
Online Junction Temperature Extraction for Cascode GaN Devices Based on Turn-On Delay 136
Comparative Analysis of Bond Wire Degradation in Power Modules during DC and AC Power Cycling 131
A Double-Sided Cooling Approach of Discrete SiC MOSFET Device Based on Press-Pack Package 131
A Novel Sensor-Reduction Condition Monitoring Approach for MMC Submodule IGBTs Based on Statistics of Inferred On-State Voltage 131
In-Operation Junction Temperature Extraction for Cascode GaN Devices Based on Turn-Off Delay 126
A Distributed Turn-Off Delay Compensator Scheme for Voltage Balancing of Series-Connected IGBTs 125
Investigation on Saturation Voltage Increment of Multichip Press-Pack IGBTs Under Power Cycling Tests 121
Design of a Non-destructive Device Test Platform Capable of Double-pulse Tests and Short-circuit Tests with Fast Overcurrent Protection for Wide Band-gap Devices 119
Thermal Stress Emulation of Power Devices Subject to DFIG Wind Power Converter 118
Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters 117
Application-Oriented Flexible Power Cycling Test System for Power Electronic Components 117
Low Inductive Characterization of Fast-Switching SiC MOSFETs and Active Gate Driver Units 115
Short-Circuit Fault Adaptive Analysis and Protection for SiC MOSFETs 108
Analytical Modeling and Sensitivity Analysis on Plasma Extraction Transit Time (PETT) Oscillations in High-Voltage NPT p-i-n Diode 104
Temperature Monitoring of Multi-Chip SiC MOSFET Modules: On-Chip RTDs vs. VSD(T) 103
Accuracy estimation of low-current voltage drop method for junction temperature monitoring under DC power cycling 101
Short-Circuit Capability Optimization of Press-Pack IGBT by Improving Active Edge Heat Dissipation 100
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 99
Comparison of Junction Temperature Measurement Using the TSEP Method and Optical Fiber Method in IGBT Power Modules without Silicone Gel Removal 99
Comparative Analysis of Power Semiconductor Thermal Stress in DC and AC Power Cycling 99
Lifetime prediction for press pack IGBT device by considering fretting wear failure 98
Ferrite Beads Design to Improve Turn-off Characteristics of Cascode GaN HEMTs: An Optimum Design Method 98
Factors Affecting Self-Sustained Switching Oscillations of Cascode GaN Devices and Mitigation Strategy during Parameter Design 98
Influence of Temperature on Bond Wire Fatigue of Gate Loops in IGBT Modules under Sinusoidal Vibration Stress 97
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 94
Unclamped repetitive stress on 1200 V normally-off SiC JFETs 94
Investigating the solder mask defects impact on leakage current on PCB under condensing humidity conditions 92
Investigation on the Short-circuit Withstand Capability of Press-pack IGBT modules with Optimized Package Structures 92
Junction temperature monitoring for cascode GaN devices using the Si MOSFET's body diode voltage drop 90
Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductors 89
Multidimensional Mission-Profile-Based Lifetime Estimation Approach for IGBT Modules in MMC-HVdc Application Considering Bidirectional Power Transfer 88
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 88
Power converters for future LHC experiments 86
Operation of SiC normally-off JFET at the edges of its safe operating area 85
IGBT RBSOA non-destructive testing methods: Analysis and discussion 85
Application-Oriented Reliability Testing of Power Electronic Components and Converters 84
Mission-profile-based stress analysis of bond-wires in SiC power modules 81
Failure degradation similarities on power SiC MOSFET devices submitted to short-circuit stress and accelerated switching conditions 81
Reliability of WBG, results of a Pre-Scoping Study 79
Improved Drain-source Voltage Detection Method for Short-circuit Protection of SiC MOSFET 79
A Fully Coupled Model of Multi-Chip Press-Pack IGBT for Thermo-Mechanical Stress Distribution Prediction 77
Thermal Mapping of Power Modules Using Optical Fibers during AC Power Cycling Tests 76
Online monitoring and correction method of threshold voltage in SiC MOSFET power cycling test 75
Impact of Solder Degradation on VCE of IGBT Module: Experiments and Modeling 74
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 73
Optimization of a Bidirectional Boost Converter for Nanogrid Applications 72
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 72
Mechanoluminescence of nylon under high velocity impact 72
Reliability oriented design of power supplies for high energy physics applications 70
Design for Reliability of SiC-MOSFET-Based 1500-V PV Inverters With Variable Gate Resistance 69
Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices 68
Thermal damage in SiC Schottky diodes induced by SE heavy ions 68
Developments on DC/DC converters for the LHC experiment upgrades 68
Effects of On-State Snap-back Characteristics on the Current Sharing of Parallel RC-IGBTs 68
On-line Junction Temperature and Current Synchronous Extraction for SiC MOSFETs With Electroluminescence Effect 67
Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression 66
A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules 66
Three-Dimensional Safe Operating Area based Short-Circuit Failure Modes Investigation and Classification for High-Power IGBT Modules 66
Measuring Temperature Swing with Optical Fibers during Power Cycling of Power Components 66
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 65
Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter With Maximum $dI_C/dt$ During Turn-off for High Power Trench Gate/Field-Stop IGBT Modules 65
A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis 64
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules 63
Mission profile simplification method for reliability analysis of PV converters 63
Aging Investigation of the Latest Standard Dual Power Modules Using Improved Interconnect Technologies by Power Cycling Test 62
Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs 61
Robustness of MW-Level IGBT modules against gate oscillations under short circuit events 60
An Energy-Efficient Voltage-Doubler-Based DC–DC Stage for Current Source Inverter Operation 56
Intrusiveness of Power Device Condition Monitoring Methods: Introducing Figures of Merit for Condition Monitoring 54
Advanced power cycler with intelligent monitoring strategy of IGBT module under test 53
Expected Life and Failure Model in IGBT Modules under Vibration-Induced Stress: A Case Study 49
Prediction of the electrochemical migration induced failure on power PCBs under humidity condition A case study 47
On-State Voltage Measurement Circuit for Condition Monitoring of MOSFETs in Resonant Converters 44
Liquid Paste Interconnects on a Silicon Power Diode 40
Thermal Effect on Sinusoidal Vibration Fatigue of Bond Wire in IGBT Gate Loop 39
Contact Pressure Distribution Measurement for the Press Pack IGBT by Ultrasonic Measurement Method 35
Reliability of electronic components and systems with WBG technology 32
High voltage, high performance switch using series connected IGBTs 29
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Totale 7.439
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Categoria #
all - tutte 16.088
article - articoli 11.866
book - libri 0
conference - conferenze 4.144
curatela - curatele 0
other - altro 78
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 32.176
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211 0 0 0 0 0 0 0 0 0 0 0 1
2021/202212 0 1 1 0 1 1 0 0 0 1 4 3
2022/202312 2 2 0 0 0 5 1 0 1 0 1 0
2023/20243 0 0 0 0 0 0 0 1 0 0 1 1
2024/2025551 0 6 0 1 0 0 0 9 3 18 105 409
2025/20266.812 312 426 868 1.439 274 297 498 467 1.386 587 258 0
Totale 7.439