Archivio Istituzionale della RicercaThe aim of this paper is to present a comparison between failure analyses results performed on power SiC devices. Various devices have been submitted to SC (Short-circuit) stress and ITASC (Inverter Test with Accelerated Switching Conditions) method. Some similarities have been detected, as well as the same failure mode represented by a gate-source shorted-circuit.
Failure degradation similarities on power SiC MOSFET devices submitted to short-circuit stress and accelerated switching conditions / Oliveira, J.; Frey, P.; Morel, H.; Reynes, J. M.; Burky, J.; Coccetti, F.; Iannuzzo, F.; Piton, M.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - ELETTRONICO. - 148:(2023). [10.1016/j.microrel.2023.115166]
Failure degradation similarities on power SiC MOSFET devices submitted to short-circuit stress and accelerated switching conditions
F. Iannuzzo;
2023
Abstract
The aim of this paper is to present a comparison between failure analyses results performed on power SiC devices. Various devices have been submitted to SC (Short-circuit) stress and ITASC (Inverter Test with Accelerated Switching Conditions) method. Some similarities have been detected, as well as the same failure mode represented by a gate-source shorted-circuit.
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https://hdl.handle.net/11583/2999737