Archivio Istituzionale della RicercaThis work aims to estimate the Metal-Oxide-Semiconductor Field-Effect Transistor’s (MOSFET) junction temperature, guessing in real time the dynamic drain-source resistance during MOSFET operation in LLC (Inductor-Inductor-Capacitor) converters usually adopted in Switched-Mode Power Supplies. The task is accomplished using an on-state voltage measurement circuit that allows clamping of the high-voltage drain-source voltage during the off-state. The results of this method have been compared with the temperature accurately measured using a co-packed die as a thermal sensor.
On-State Voltage Measurement Circuit for Condition Monitoring of MOSFETs in Resonant Converters / Ventimiglia, M.; Scuto, A.; Sorrentino, G.; Belverde, G.; Iannuzzo, F.; Rizzo, S. A.. - In: ELECTRONICS. - ISSN 2079-9292. - 13:19(2024). [10.3390/electronics13193902]
On-State Voltage Measurement Circuit for Condition Monitoring of MOSFETs in Resonant Converters
Iannuzzo F.;
2024
Abstract
This work aims to estimate the Metal-Oxide-Semiconductor Field-Effect Transistor’s (MOSFET) junction temperature, guessing in real time the dynamic drain-source resistance during MOSFET operation in LLC (Inductor-Inductor-Capacitor) converters usually adopted in Switched-Mode Power Supplies. The task is accomplished using an on-state voltage measurement circuit that allows clamping of the high-voltage drain-source voltage during the off-state. The results of this method have been compared with the temperature accurately measured using a co-packed die as a thermal sensor.
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https://hdl.handle.net/11583/3008791