Investigation on the Short-circuit Withstand Capability of Press-pack IGBT modules with Optimized Package Structures

In this paper, based on the finite element simulation, the short-circuit process of press-pack IGBT modules (PP-IGBT) with various optimized package structures are compared and analyzed, and the effect of package structure design on the short-circuit withstand capability (SCWC) is analyzed. First, several finite element (FE) models of PP-IGBT with existing typical optimized package structure, including silver sintered, liquid metal optimized and phase change materials optimized PP-IGBT are established. Next, the actual short-circuit process of PP-IGBT is obtained, and the short-circuit processes of PP-IGBT with various package structures are compared and analyzed based on the FE simulation results. Finally, the effect of package design, including the optimized location and the chip-attaching layer thickness on the SCWC are investigated. The simulation results show that the SCWC can be improved by about 5% by adding the chip-attaching layer on emitter side.