VALLONE, MARCO ERNESTO
 Distribuzione geografica
Continente #
NA - Nord America 6.635
EU - Europa 6.388
AS - Asia 1.907
AF - Africa 42
SA - Sud America 20
Continente sconosciuto - Info sul continente non disponibili 6
OC - Oceania 2
Totale 15.000
Nazione #
US - Stati Uniti d'America 6.514
GB - Regno Unito 1.463
IT - Italia 1.444
DE - Germania 1.149
FR - Francia 970
CN - Cina 938
SG - Singapore 329
UA - Ucraina 308
RU - Federazione Russa 221
IE - Irlanda 189
NL - Olanda 173
TR - Turchia 144
KR - Corea 136
CA - Canada 121
CH - Svizzera 98
SE - Svezia 94
BE - Belgio 69
FI - Finlandia 60
HK - Hong Kong 55
ID - Indonesia 55
MY - Malesia 51
IN - India 46
VN - Vietnam 44
AT - Austria 33
SN - Senegal 29
JP - Giappone 23
IL - Israele 22
IR - Iran 22
BG - Bulgaria 19
TW - Taiwan 16
EU - Europa 15
AP - ???statistics.table.value.countryCode.AP??? 14
BR - Brasile 14
RO - Romania 13
ES - Italia 10
JO - Giordania 10
CZ - Repubblica Ceca 8
HR - Croazia 7
LT - Lituania 7
GR - Grecia 6
NO - Norvegia 5
PL - Polonia 5
SA - Arabia Saudita 5
UZ - Uzbekistan 5
EE - Estonia 4
GH - Ghana 4
KE - Kenya 3
TH - Thailandia 3
AR - Argentina 2
CI - Costa d'Avorio 2
CL - Cile 2
DK - Danimarca 2
PH - Filippine 2
PT - Portogallo 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AU - Australia 1
AZ - Azerbaigian 1
BY - Bielorussia 1
CO - Colombia 1
ET - Etiopia 1
IQ - Iraq 1
KW - Kuwait 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PE - Perù 1
SC - Seychelles 1
ZA - Sudafrica 1
Totale 15.000
Città #
Ashburn 1.356
Southend 1.238
Seattle 549
Beijing 505
Chandler 443
Fairfield 417
Princeton 291
Turin 273
Houston 271
Ann Arbor 252
Singapore 244
Torino 243
Boardman 225
Woodbridge 204
Wilmington 189
Cambridge 172
Berlin 170
Jacksonville 167
Dublin 162
Santa Clara 124
Council Bluffs 115
Izmir 96
Bern 92
Saint Petersburg 91
San Ramon 90
Bremen 84
Frankfurt 76
Mcallen 74
Montréal 68
Fremont 66
San Donato Milanese 66
Brussels 64
Seoul 57
Jakarta 55
Milan 52
Helsinki 50
Munich 46
Dong Ket 44
Hangzhou 44
Herkenbosch 42
Zhengzhou 41
San Francisco 39
Shanghai 39
Des Moines 38
Chicago 36
Guangzhou 36
Baltimore 33
Valfenera 33
Zaporozhye 33
Pennsylvania Furnace 32
Redwood City 30
Vienna 30
Paris 29
Rome 29
Menlo Park 28
Phoenix 28
Shenzhen 27
Buffalo 26
Toronto 26
Amsterdam 25
Overberg 25
Monopoli 23
San Diego 23
San Jose 23
Mountain View 22
Washington 21
Istanbul 20
Piscataway 19
Sofia 19
Padua 18
Wuhan 18
Nanjing 17
London 16
Frankfurt am Main 15
Overland Park 15
Piemonte 15
Ottawa 14
Yubileyny 13
Norwalk 12
Taipei 12
Las Vegas 11
Redmond 11
San Antonio 11
Wenzhou 11
Kunming 10
Malatya 10
Andover 9
Columbus 9
Fortaleza 9
Hong Kong 9
Lake Forest 9
Lesa 9
Los Angeles 9
Melun 9
New York 9
Chieri 8
Falls Church 8
Glasgow 8
Kocaeli 8
Lappeenranta 8
Totale 10.050
Nome #
Physics-based simulation of narrow and wide band gap photonic devices 588
Many-body formulation of carriers capture time in Quantum Dots applicable to device simulation codes 418
Development of high-speed directly-modulated DFB and DBR lasers with surface gratings. 396
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 379
1.3 µm two-section DBR lasers based on surface defined gratings for high speed telecommunication. 376
Enhanced Modulation bandwidth in Complex Cavity Injection Grating Lasers 374
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 362
Quantum well electron scattering rates through longitudinal optic-phonon dynamical screened interaction: An analytic approach. 331
Mode locking and bandwidth enhancement in single section ridge laser with two spatial modes 322
Multi Quantum Well Gain Modeling using a Green’s Function-based Fractional Dimensional Approach 314
1.55 μm directly modulated CCIG lasers fabricated by surface-defined lateral feedback gratings. 298
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 298
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 296
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 277
Modeling challenges for high-efficiency visible light-emitting diodes 264
Design of high modulation bandwidth DBR lasers exploiting detuned loading and photon-photon resonance effects 259
Trench width dependant deeply etched surface-defined InP gratings for low-cost high speed DFB/DBR 258
Practical Formulation of the Electron Capture Rate in Quantum Wells by Phonon emission at Low Carrier Density 255
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 246
Optimisation of 10 Gbit/s InGaAsP electroabsorption modulator operating at high temperature 239
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 237
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 233
Formulation of the optical response in semiconductors and quantum-confined structures 231
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 225
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 223
Photon-photon resonance enhanced modulation bandwidth in CCIG lasers 221
General self-energy-based formulation of levels couplingin quantum confined structures 217
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 211
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 207
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 207
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 206
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 205
Numerical Analysis of short-cavity DFB laser for 40 Gb/s transmission. 204
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 200
Enhanced Modulation Bandwidth in CCIG lasers 194
Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge Fabry-Perot lasers, operating at 10-Gb/s, up to 110/spl deg/C, with constant current swing 185
Low-cost 10 Gb/s 1310nm uncooled electroabsorption modulated lasers 181
Model for carrier capture time through phonon emission in InGaN/GaN quantum wells 180
Compact integrated interferometer with semiconductor optical amplifiers 179
Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge fabry-Perot lasers, operating at 10-gb/s, up to 110/spl deg/C, with constant current swing 174
Simulation of small-pitch HgCdTe photodetectors 172
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach 172
Investigation of broadband modulation in CCIG lasers [2210] 169
Wide Tuneable Laser Sources 149
Quantum Efficiency and Crosstalk in Subwavelength HgCdTe Dual Band Infrared Detectors 132
Wide Tuneable Laser Sources 131
Method of providing electrical separation in integrated devices and related device 125
Bias effects on the electro-optic response of Ge-on-Si waveguide photodetectors 125
Next-generation long-wavelength infrared detector arrays: competing technologies and modeling challenges 124
Modeling Tunnel Junctions for VCSELs: A Self-Consistent NEGF-DD Approach 121
Modeling Infrared Superlattice Photodetectors: From Nonequilibrium Green’s Functions to Quantum-Corrected Drift Diffusion 119
Analysis and Design of Plasmonic-Organic Hybrid Electro-Optic Modulators Based on Directional Couplers 115
Non-Monochromatic 3D Optical Simulation of HgCdTe Focal Plane Arrays 114
Organic Electro‐Optic Mach–Zehnder Modulators: From Physics‐Based to System‐Level Modeling 106
Plasmon-enhanced light absorption in mid-wavelength infrared HgCdTe detectors 104
Reducing inter-pixel crosstalk in HgCdTe detectors 101
Diffusive-probabilistic model for inter-pixel crosstalk in HgCdTe focal plane arrays 97
Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives 96
Plasmonic-organic hybrid electro/optic Mach-Zehnder modulators: from waveguide to multiphysics modal-FDTD modeling 96
FDTD simulation of compositionally graded HgCdTe photodetectors 94
Effect of Saturation Velocity in Germanium p-i-n Photodetectors 93
Reducing inter-pixel crosstalk in HgCdTe detectors 93
Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics 92
Simulation and design of plasmonic directional couplers: application to interference-based all-optical gates 91
Towards an efficient simulation framework for plasmonic organic hybrid E/O modulators 88
Multiphysics modeling of plasmonic organic hybrid E/O modulators 88
Simulation of electro optic modulators based on plasmonic directional couplers 86
Ge-on-Si waveguide photodetectors: multiphysics modeling and experimental validation 85
Enhanced semiclassical simulation of InGaN/GaN multi-quantum-well solar cells 84
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics 84
Challenges in multiphysics modeling of dual-band HgCdTe infrared detectors 82
Plasmonic nanorods for enhanced absorption in mid-wavelength infrared detectors 81
Modeling of plasmonic organic hybrid E/O modulators: towards a comprehensive 3D simulation framework 80
Enhanced dynamic properties of Ge-on-Si mode-evolution waveguide photodetectors 75
Efficient modeling of plasmonic organic hybrid electro/optic modulators 72
Constraints and performance trade-offs in Auger-suppressed HgCdTe focal plane arrays 71
Modeling the frequency response of vertical and lateral Ge-on-Si waveguide photodetectors: Is 3D simulation unavoidable? 66
Challenges in multiphysics modeling of dual-band HgCdTe infrared detectors 66
Higgs and Goldstone modes in crystalline solids 63
Structural Phase Transitions in Crystals: Phonons as Higgs and Goldstone Excitations 63
Modeling the electronic transport in FinFET-like lateral Ge-on-Si pin waveguide photodetectors for ultra-wide bandwidth applications 59
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics 57
Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: A TCAD and Semianalytic Investigation 56
Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress 50
Inter-pixel Crosstalk in Auger-Suppressed Dense Infrared Detectors 49
TCAD-Assisted Progress on the Cisco Platform Toward Low-Bias 200 Gbit/s vertical-pin Ge- on-Si Waveguide Photodetectors 45
Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge fabry-pérot lasers, operating at 10-Gb/s, up to 110°C, with constant current swing 40
Different approximations for carriers lifetimes in HgCdTe quasi-neutral regions 36
Modeling the effects of graded and abrupt mole fraction profiles in pBn and nBn HgCdTe barrier detectors 35
Interferometric wavelength converter operating at 10 Gb/s based on a monolithic-integrated photonic circuit 34
Higgs and Goldstone modes in crystalline solids 23
High operating temperature HgCdTe coupled cavity plasmonic infrared photodetectors 20
Totale 15.239
Categoria #
all - tutte 39.890
article - articoli 18.396
book - libri 0
conference - conferenze 18.296
curatela - curatele 0
other - altro 0
patent - brevetti 1.304
selected - selezionate 0
volume - volumi 984
Totale 78.870


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.042 0 0 0 0 164 167 154 186 188 87 49 47
2020/20211.533 205 169 90 171 82 159 98 82 110 139 91 137
2021/20221.602 87 107 71 173 136 96 44 68 183 71 268 298
2022/20231.697 146 292 38 151 300 207 124 80 145 10 83 121
2023/2024725 28 83 68 45 40 59 33 46 42 50 147 84
2024/20251.153 73 451 163 279 187 0 0 0 0 0 0 0
Totale 15.239