This work compares a multiphysics modeling approach with experimental measurements of two Ge-on-Si butt-coupled waveguide photodetectors. The coupled three-dimensional electromagnetic and electrical simulation of the frequency response shows promising agreement with the measurements at 1310 nm, and provides detailed information about significant microscopic quantities, such as the spatial distribution of the optical generation rate.

Ge-on-Si waveguide photodetectors: multiphysics modeling and experimental validation / Alasio, Matteo; Goano, Michele; Tibaldi, Alberto; Bertazzi, Francesco; Namnabat, Soha; Adams, Donald; Gothoskar, Prakash; Forghieri, Fabrizio; Ghione, Giovanni; Vallone, Marco. - ELETTRONICO. - (2021), pp. 37-38. (Intervento presentato al convegno 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) tenutosi a Turin, Italy nel 13-17 Settembre 2021) [10.1109/NUSOD52207.2021.9541424].

Ge-on-Si waveguide photodetectors: multiphysics modeling and experimental validation

Alasio, Matteo;Goano, Michele;Tibaldi, Alberto;Bertazzi, Francesco;Ghione, Giovanni;Vallone, Marco
2021

Abstract

This work compares a multiphysics modeling approach with experimental measurements of two Ge-on-Si butt-coupled waveguide photodetectors. The coupled three-dimensional electromagnetic and electrical simulation of the frequency response shows promising agreement with the measurements at 1310 nm, and provides detailed information about significant microscopic quantities, such as the spatial distribution of the optical generation rate.
2021
978-1-6654-1276-6
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2929020