In this work we investigate carrier transport in tunnel junctions for vertical-cavity surface-emitting lasers by a novel self-consistent simulation framework for semiconductor quantum devices. Based on a Poisson-drift-diffusion foundation, in this approach quantum features are described through a nonequilibrium Green’s function formalism. The simulator is validated through a comparison with experimental results.

Modeling Tunnel Junctions for VCSELs: A Self-Consistent NEGF-DD Approach / Tibaldi, Alberto; Gullino, Alberto; Montoya, Jesus Gonzalez; Alasio, Matteo; Larsson, Anders; Debernardi, Pierluigi; Goano, Michele; Vallone, Marco; Ghione, Giovanni; Bellotti, Enrico; Bertazzi, Francesco. - ELETTRONICO. - (2020), pp. 67-68. ((Intervento presentato al convegno https://ieeexplore.ieee.org/document/9217684 tenutosi a Online conference nel September 2020 [10.1109/NUSOD49422.2020.9217684].

Modeling Tunnel Junctions for VCSELs: A Self-Consistent NEGF-DD Approach

Tibaldi, Alberto;Gullino, Alberto;Montoya, Jesus Gonzalez;Alasio, Matteo;Goano, Michele;Vallone, Marco;Ghione, Giovanni;Bertazzi, Francesco
2020

Abstract

In this work we investigate carrier transport in tunnel junctions for vertical-cavity surface-emitting lasers by a novel self-consistent simulation framework for semiconductor quantum devices. Based on a Poisson-drift-diffusion foundation, in this approach quantum features are described through a nonequilibrium Green’s function formalism. The simulator is validated through a comparison with experimental results.
978-1-7281-6086-3
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2848459