Archivio Istituzionale della RicercaWe present a compact small-signal equivalent circuit for ultra-fast lateral Ge-on-Si waveguide photodetectors, validated against full 3D drift-diffusion TCAD simulations. By evaluating the contributions of intrinsic and parasitic elements, the model enables prediction of device performance and offers direct insight into the RC limitations of the photodetector, useful in circuit level designs.
Small-Signal Compact Modeling and TCAD Validation of Ultra-Fast Lateral Ge-On-Si Waveguide Photodetectors / Alasio, Matteo; Divincenzo, Giuseppe; Mudano, Angelo; Ghione, Giovanni; Vallone, Marco; Goano, Michele. - ELETTRONICO. - (2025), pp. 103-104. (Intervento presentato al convegno 2025 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) tenutosi a Łódź (Pol) nel 14-18 settembre 2025) [10.1109/nusod64393.2025.11199496].
Small-Signal Compact Modeling and TCAD Validation of Ultra-Fast Lateral Ge-On-Si Waveguide Photodetectors
Alasio, Matteo;Divincenzo, Giuseppe;Mudano, Angelo;Ghione, Giovanni;Vallone, Marco;Goano, Michele
2025
Abstract
We present a compact small-signal equivalent circuit for ultra-fast lateral Ge-on-Si waveguide photodetectors, validated against full 3D drift-diffusion TCAD simulations. By evaluating the contributions of intrinsic and parasitic elements, the model enables prediction of device performance and offers direct insight into the RC limitations of the photodetector, useful in circuit level designs.
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https://hdl.handle.net/11583/3004514