Silicon photonics, allowing for the integration of optoelectronic components into CMOS-compatible platforms, has shown great promise in the development of next-generation telecommunication systems and fast, low-power data interconnects. Within this framework, the increasing transistor integration and power dissipation density has led, during the last decades, to a steady decrease of the CMOS bias voltages. This trend may also affect the operation of silicon photonics components: the present work is focused on the effects of lower bias in Ge-on-Si waveguide photodetectors (WPDs), using the electro-optic (EO) frequency response as a figure of merit.
Bias effects on the electro-optic response of Ge-on-Si waveguide photodetectors / Alasio, Matteo; Goano, Michele; Tibaldi, Alberto; Bertazzi, Francesco; Namnabat, Soha; Adams, Donald; Gothoskar, Prakash; Forghieri, Fabrizio; Ghione, Giovanni; Vallone, Marco. - ELETTRONICO. - (2021), pp. 1-2. ((Intervento presentato al convegno 2021 IEEE Photonics Conference (IPC) tenutosi a Online nel 18-21 Ottobre 2021 [10.1109/IPC48725.2021.9592968].
Titolo: | Bias effects on the electro-optic response of Ge-on-Si waveguide photodetectors | |
Autori: | ||
Data di pubblicazione: | 2021 | |
Abstract: | Silicon photonics, allowing for the integration of optoelectronic components into CMOS-compatible... platforms, has shown great promise in the development of next-generation telecommunication systems and fast, low-power data interconnects. Within this framework, the increasing transistor integration and power dissipation density has led, during the last decades, to a steady decrease of the CMOS bias voltages. This trend may also affect the operation of silicon photonics components: the present work is focused on the effects of lower bias in Ge-on-Si waveguide photodetectors (WPDs), using the electro-optic (EO) frequency response as a figure of merit. | |
ISBN: | 978-1-6654-1601-6 | |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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http://hdl.handle.net/11583/2939337