Silicon photonics, allowing for the integration of optoelectronic components into CMOS-compatible platforms, has shown great promise in the development of next-generation telecommunication systems and fast, low-power data interconnects. Within this framework, the increasing transistor integration and power dissipation density has led, during the last decades, to a steady decrease of the CMOS bias voltages. This trend may also affect the operation of silicon photonics components: the present work is focused on the effects of lower bias in Ge-on-Si waveguide photodetectors (WPDs), using the electro-optic (EO) frequency response as a figure of merit.

Bias effects on the electro-optic response of Ge-on-Si waveguide photodetectors / Alasio, Matteo; Goano, Michele; Tibaldi, Alberto; Bertazzi, Francesco; Namnabat, Soha; Adams, Donald; Gothoskar, Prakash; Forghieri, Fabrizio; Ghione, Giovanni; Vallone, Marco. - ELETTRONICO. - (2021), pp. 1-2. (Intervento presentato al convegno 2021 IEEE Photonics Conference (IPC) tenutosi a Online nel 18-21 Ottobre 2021) [10.1109/IPC48725.2021.9592968].

Bias effects on the electro-optic response of Ge-on-Si waveguide photodetectors

Alasio, Matteo;Goano, Michele;Tibaldi, Alberto;Bertazzi, Francesco;Ghione, Giovanni;Vallone, Marco
2021

Abstract

Silicon photonics, allowing for the integration of optoelectronic components into CMOS-compatible platforms, has shown great promise in the development of next-generation telecommunication systems and fast, low-power data interconnects. Within this framework, the increasing transistor integration and power dissipation density has led, during the last decades, to a steady decrease of the CMOS bias voltages. This trend may also affect the operation of silicon photonics components: the present work is focused on the effects of lower bias in Ge-on-Si waveguide photodetectors (WPDs), using the electro-optic (EO) frequency response as a figure of merit.
2021
978-1-6654-1601-6
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2939337