We discuss the characterization and numerical simulation of vertical Ge-on-Si waveguide photodetectors (VPIN WPDs) of the Cisco platform for data communications in the O-band (1.31 um), with the goal of optimizing their frequency response while integrating them into low-power systems. In a large set of WPDs belonging to 6 different structural variants, at a standard bias voltage of −2 V the best specimens exhibit an intrinsic electro-optic bandwidth of more than 40 GHz, which is reduced to about 10 GHz at zero bias. A comprehensive 3D multiphysics model, validated through the characterization campaign, provides design guidelines towards intrinsic bandwidths not only wider than 60 GHz at −2 V , directly suitable for application in 200 Gbit/s systems, but also wider than 40 GHz at zero bias, not including the possible recourse to extrinsic parameter engineering.

TCAD-Assisted Progress on the Cisco Platform Toward Low-Bias 200 Gbit/s vertical-pin Ge- on-Si Waveguide Photodetectors / Alasio, Matteo; Vallone, Marco; Tibaldi, Alberto; Namnabat, Soha; Adams, Donald; Gothoskar, Prakash; Forghieri, Fabrizio; Masini, Gianlorenzo; Bertazzi, Francesco; Ghione, Giovanni; Gioannini, Mariangela; Goano, Michele. - In: JOURNAL OF LIGHTWAVE TECHNOLOGY. - ISSN 0733-8724. - STAMPA. - 42:9(2024), pp. 3269-3276. [10.1109/jlt.2024.3352437]

TCAD-Assisted Progress on the Cisco Platform Toward Low-Bias 200 Gbit/s vertical-pin Ge- on-Si Waveguide Photodetectors

Alasio, Matteo;Vallone, Marco;Tibaldi, Alberto;Bertazzi, Francesco;Ghione, Giovanni;Gioannini, Mariangela;Goano, Michele
2024

Abstract

We discuss the characterization and numerical simulation of vertical Ge-on-Si waveguide photodetectors (VPIN WPDs) of the Cisco platform for data communications in the O-band (1.31 um), with the goal of optimizing their frequency response while integrating them into low-power systems. In a large set of WPDs belonging to 6 different structural variants, at a standard bias voltage of −2 V the best specimens exhibit an intrinsic electro-optic bandwidth of more than 40 GHz, which is reduced to about 10 GHz at zero bias. A comprehensive 3D multiphysics model, validated through the characterization campaign, provides design guidelines towards intrinsic bandwidths not only wider than 60 GHz at −2 V , directly suitable for application in 200 Gbit/s systems, but also wider than 40 GHz at zero bias, not including the possible recourse to extrinsic parameter engineering.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2987892