Archivio Istituzionale della RicercaWe present a numerical simulation study at 200 K of pBn and nBn HgCdTe barrier detectors, focused on the effects of the composition profile on the J-V characteristics in dark. Considering a conventional barrier detector structure with three regions (absorber, barrier, cap), we discuss how the J-V characteristics are affected by the steepness of the cap/barrier and barrier/absorber interfaces, especially in the nBn configuration.
Modeling the effects of graded and abrupt mole fraction profiles in pBn and nBn HgCdTe barrier detectors / Alasio, Matteo; Vallone, Marco; Molino, Paolo; Errico, Luca; Hanna, Stefan; Figgemeier, Heinrich; Tibaldi, Alberto; Bertazzi, Francesco; Ghione, Giovanni; Goano, Michele. - ELETTRONICO. - 12687:(2023), pp. 1-5. (Intervento presentato al convegno SPIE Optical Engineering + Applications tenutosi a San Diego (USA) nel 20 - 24 August 2023) [10.1117/12.2682206].
Modeling the effects of graded and abrupt mole fraction profiles in pBn and nBn HgCdTe barrier detectors
Alasio, Matteo;Vallone, Marco;Tibaldi, Alberto;Bertazzi, Francesco;Ghione, Giovanni;Goano, Michele
2023
Abstract
We present a numerical simulation study at 200 K of pBn and nBn HgCdTe barrier detectors, focused on the effects of the composition profile on the J-V characteristics in dark. Considering a conventional barrier detector structure with three regions (absorber, barrier, cap), we discuss how the J-V characteristics are affected by the steepness of the cap/barrier and barrier/absorber interfaces, especially in the nBn configuration.
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https://hdl.handle.net/11583/2983004