Different approximations for carriers lifetimes in HgCdTe quasi-neutral regions

In mid- and far-infrared HgCdTe photodetectors, the maximum operating temperature is determined by the dark current, which in turn depends on charge carriers lifetimes. The ability to reduce dark current and operate at the radiative limit allows for significantly higher operating temperature, but in this new scenario some approximations, commonly and historically applied in the literature to estimate and optimize lifetimes and dark current, in some cases should be avoided.