Archivio Istituzionale della RicercaThis work discusses coupled three-dimensional electromagnetic and electrical simulations of a Ge-on-Si waveguide photodetector where light is fed through a lateral waveguide. The numerical results show that this coupling solution leads to more uniform photon and carrier distributions along the Ge absorber compared to a conventional butt-coupled detector, allowing a broader electrooptical bandwidth for high input power levels in good agreement with available experimental measurements.
Enhanced dynamic properties of Ge-on-Si mode-evolution waveguide photodetectors / Palmieri, A.; Shafiee, A.; Alasio, M. G. C.; Tibaldi, A.; Ghione, G.; Bertazzi, F.; Goano, M.; Vallone, M.. - STAMPA. - (2020), pp. 27-28. (Intervento presentato al convegno 20th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2020) tenutosi a Online conference nel September 2020) [10.1109/NUSOD49422.2020.9217719].
Enhanced dynamic properties of Ge-on-Si mode-evolution waveguide photodetectors
Palmieri, A.;Alasio, M. G. C.;Tibaldi, A.;Ghione, G.;Bertazzi, F.;Goano, M.;Vallone, M.
2020
Abstract
This work discusses coupled three-dimensional electromagnetic and electrical simulations of a Ge-on-Si waveguide photodetector where light is fed through a lateral waveguide. The numerical results show that this coupling solution leads to more uniform photon and carrier distributions along the Ge absorber compared to a conventional butt-coupled detector, allowing a broader electrooptical bandwidth for high input power levels in good agreement with available experimental measurements.
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2020Palmieri_NUSOD.pdf
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2020Palmieri_NUSOD.authors_postprint.pdf
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https://hdl.handle.net/11583/2848160