Archivio Istituzionale della RicercaIII-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics / Buffolo, Matteo; Roccato, Nicola; Piva, Francesco; De Santi, Carlo; Brescancin, Riccardo; Casu, Claudia; Caria, Alessandro; Mukherjee, Kalparupa; Haller, Camille; Carlin, Jean Francois; Grandjean, Nicolas; Vallone, Marco; Tibaldi, Alberto; Bertazzi, Francesco; Goano, Michele; Verzellesi, Giovanni; Mosca, Mauro; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo. - ELETTRONICO. - 12022:(2022), p. 120220G. (Intervento presentato al convegno SPIE Photonics West 2022 tenutosi a San Francisco nel 22-27 gennaio 2022) [10.1117/12.2606599].
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
Vallone, Marco;Tibaldi, Alberto;Bertazzi, Francesco;Goano, Michele;
2022
Abstract
III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.
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https://hdl.handle.net/11583/2958438