PORTO @ Archivio Istituzionale della Ricerca

BERTAZZI, FRANCESCO
 Distribuzione geografica
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Continente #
NA - Nord America 17.714
EU - Europa 15.210
AS - Asia 11.468
SA - Sud America 932
AF - Africa 163
Continente sconosciuto - Info sul continente non disponibili 12
OC - Oceania 10
Totale 45.509
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Nazione #
US - Stati Uniti d'America 17.494
IT - Italia 3.552
SG - Singapore 3.258
GB - Regno Unito 2.809
VN - Vietnam 2.698
CN - Cina 2.457
DE - Germania 2.411
FR - Francia 2.260
RU - Federazione Russa 1.274
UA - Ucraina 760
BR - Brasile 724
KR - Corea 704
HK - Hong Kong 656
NL - Olanda 362
IE - Irlanda 356
IN - India 349
TR - Turchia 348
CH - Svizzera 258
FI - Finlandia 252
SE - Svezia 230
AT - Austria 193
CA - Canada 155
BE - Belgio 152
JP - Giappone 131
ID - Indonesia 113
MY - Malesia 105
PH - Filippine 98
TW - Taiwan 80
IQ - Iraq 72
TH - Thailandia 65
AR - Argentina 58
BD - Bangladesh 58
PK - Pakistan 55
ES - Italia 48
PL - Polonia 44
EU - Europa 42
MX - Messico 36
SN - Senegal 35
EC - Ecuador 31
IR - Iran 31
JO - Giordania 31
CO - Colombia 30
BG - Bulgaria 28
CL - Cile 28
IL - Israele 27
ZA - Sudafrica 24
VE - Venezuela 23
KE - Kenya 21
MA - Marocco 21
UZ - Uzbekistan 20
AP - ???statistics.table.value.countryCode.AP??? 19
RO - Romania 19
SA - Arabia Saudita 19
AE - Emirati Arabi Uniti 17
PY - Paraguay 16
NO - Norvegia 15
NP - Nepal 14
LT - Lituania 13
DK - Danimarca 12
DZ - Algeria 12
EE - Estonia 12
EG - Egitto 12
CZ - Repubblica Ceca 11
HR - Croazia 11
PT - Portogallo 11
AU - Australia 10
AZ - Azerbaigian 10
KZ - Kazakistan 10
PE - Perù 9
TN - Tunisia 9
BY - Bielorussia 8
GR - Grecia 8
HU - Ungheria 8
AL - Albania 7
GH - Ghana 7
LU - Lussemburgo 7
SY - Repubblica araba siriana 7
AM - Armenia 6
BO - Bolivia 6
DO - Repubblica Dominicana 6
GE - Georgia 6
KG - Kirghizistan 6
LB - Libano 6
OM - Oman 5
RS - Serbia 5
UY - Uruguay 5
CI - Costa d'Avorio 4
JM - Giamaica 4
KW - Kuwait 4
NG - Nigeria 4
SI - Slovenia 4
BB - Barbados 3
BH - Bahrain 3
BS - Bahamas 3
CR - Costa Rica 3
HN - Honduras 3
MU - Mauritius 3
NI - Nicaragua 3
PS - Palestinian Territory 3
CG - Congo 2
Totale 45.477
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Città #
Ashburn 3.817
Southend 2.459
Singapore 1.862
Seattle 1.574
Fairfield 1.136
Chandler 930
Turin 815
Beijing 774
San Jose 763
Ho Chi Minh City 709
Hanoi 651
Woodbridge 551
Princeton 540
Hong Kong 517
Houston 516
Santa Clara 508
Ann Arbor 506
Cambridge 473
Torino 460
Boardman 443
Wilmington 441
Jacksonville 384
Berlin 363
Seoul 343
Dublin 311
Los Angeles 294
Council Bluffs 261
San Ramon 255
Izmir 248
Dallas 247
Bern 211
Bologna 193
Saint Petersburg 184
Lauterbourg 183
Helsinki 163
Milan 157
Brussels 146
Chicago 135
San Donato Milanese 130
Da Nang 128
Hefei 124
Zhengzhou 120
Buffalo 119
Vienna 119
North Bergen 114
Shanghai 107
Zaporozhye 96
Haiphong 95
Frankfurt 91
Baltimore 90
Amsterdam 89
San Francisco 87
Guangzhou 85
Jakarta 85
Pennsylvania Furnace 83
Moscow 81
Fremont 75
Bremen 72
Shenzhen 71
Overberg 70
New York 64
Rome 64
São Paulo 62
Frankfurt am Main 61
Hangzhou 60
Munich 60
Lappeenranta 56
Paris 56
Mountain View 55
Toronto 55
Padua 54
Monopoli 53
Redwood City 52
Des Moines 51
Tokyo 46
Istanbul 44
Piscataway 43
San Diego 42
Valfenera 42
Nuremberg 41
Hải Dương 40
London 39
Columbus 37
Menlo Park 36
Washington 33
Groningen 31
Bangkok 30
Overland Park 30
Atlanta 29
Turku 29
Biên Hòa 28
The Dalles 28
Herkenbosch 27
Nha Trang 27
Norwalk 27
Rio de Janeiro 27
Wenzhou 27
Lecce 26
Orem 26
Baghdad 25
Totale 28.317
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Nome #
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 689
A generalized drift-diffusion model for rectifying Schottky contact simulation 517
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 489
Alloy scattering in AlGaN and InGaN: A numerical study 482
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations 468
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 464
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 463
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 459
Large-signal device simulation in time- and frequency-domain: a comparison 452
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model 440
Role of defects in the thermal droop of InGaN-based light emitting diodes 433
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors 415
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 408
Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis 406
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 383
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 383
A numerical study of Auger recombination in bulk InGaN 380
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 378
Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems 371
Modeling challenges for high-efficiency visible light-emitting diodes 366
DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS 358
A numerical study of carrier impact ionization in AlGaN 352
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 352
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 345
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions - Part I: Large-Signal Sensitivity 343
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 342
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties 339
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach 339
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 338
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 338
A numerical study of low- and high-field carrier transport properties in In0.18Al0.82N lattice-matched to GaN 338
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 328
VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator 324
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 323
A reduced-order technique for the acceleration of electronic structure calculations 322
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II - Small-Signal and Conversion Matrix Sensitivity 321
Many-valley electron transport in AlGaAs VCSELs 318
Simulation of Quantum Dot Solar Cells Including Carrier Intersubband Dynamics and Transport 318
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 318
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation 317
Numerical analysis of indirect Auger transitions in InGaN 312
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 310
Innovative techniques for device large-signal noise simulations 309
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 305
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study 299
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications 298
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium 298
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 297
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 295
Auger recombination in bulk InGaN and quantum wells: a numerical simulation study 294
Theory of high field carrier transport and impact ionization in ZnO 293
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 292
Full-band Monte Carlo simulation of HgCdTe APDs 286
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook 285
Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D 285
Low-frequency noise conversion modeling in RF devices under forced nonlinear operation 281
Application of physical models to circuit simulations 277
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 277
Microwave device optimization through efficient numerical simulation 276
A novel reduced-order model for full-wave waveguide analysis 276
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells 275
Full-band Monte Carlo simulation of HgCdTe APDs 271
Key issues in trap-assisted low-frequency device noise simulation in nonlinear large-signal conditions 270
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 269
Accurate simulation of travelling-wave electroabsorption modulators through a novel coupled electromagnetic and carrier-transport model 268
Self-Consistent Coupled Carrier Transport Full-Wave EM Analysis of Semiconductor Travelling-Wave Devices 267
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section 264
A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures 264
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 264
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe 261
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators 261
Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model 260
Auger transitions and their signatures in III-nitride LEDs: a full-band modeling 260
Physics-based mixer noise simulation 258
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 256
A 2D Full-Band Monte Carlo Study of HgCdTe-Based Avalanche Photodiodes 251
Physics-based design of III-nitride and ZnO LEDs: from material properties to device optimization 250
Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO 250
A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications 248
Physics-based noise modelling of semiconductor devices in large-signal operation including low-frequency noise conversion effects 247
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 247
Modeling Infrared Superlattice Photodetectors: From Nonequilibrium Green’s Functions to Quantum-Corrected Drift Diffusion 247
Accurate and efficient numerical quasi-TEM modeling of coplanarwaveguides for high-speed electro-optic modulators 246
Ab initio, nonlocal pseudopotential, and full-zone k*p computation of the electronic structure of wurtzite BeO 245
GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth 245
Kinetic and Partial-Differential Equation Modeling of Noise in Schottky Barrier Diodes: a Comparison 245
Two-dimensional physics-based low-frequency noise modeling of bipolar semiconductor devices in small- and large-signal operation 244
Fast, reduced order full-wave FEM analysis of broadband traveling-wave electrooptical modulators 243
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 243
Electron Transport 243
Nonequilibrium Green’s Function Modeling of type-II Superlattice Detectors and its Connection to Semiclassical Approaches 243
Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation 242
Theory of high field transport and impact ionization in III-nitride semiconductors 242
Analysis and Design of Plasmonic-Organic Hybrid Electro-Optic Modulators Based on Directional Couplers 242
Next-generation long-wavelength infrared detector arrays: competing technologies and modeling challenges 239
Quantum Efficiency and Crosstalk in Subwavelength HgCdTe Dual Band Infrared Detectors 235
Fast higher-order full-wave FEM analysis of traveling-wave optoelectronic devices 234
Bridging scales in multiphysics VCSEL modeling 233
Experimental electron mobility in ZnO: a reassessment through Monte Carlo simulation 232
Auger lifetime in narrow gap semiconductors 229
Totale 31.397
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Categoria #
all - tutte 123.019
article - articoli 60.820
book - libri 0
conference - conferenze 59.137
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 3.062
Totale 246.038
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021283 0 0 0 0 0 0 0 0 0 0 163 120
2021/20222.580 184 177 92 233 206 165 76 104 249 167 396 531
2022/20233.359 303 553 77 332 467 434 218 130 337 44 186 278
2023/20241.282 66 132 61 98 72 92 68 75 100 100 252 166
2024/20254.936 107 904 325 522 470 277 292 290 654 259 368 468
2025/202611.613 615 602 751 969 853 815 2.041 911 2.872 1.163 21 0
Totale 45.927