PORTO @ Archivio Istituzionale della Ricerca

BERTAZZI, FRANCESCO
 Distribuzione geografica
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Continente #
NA - Nord America 18.573
EU - Europa 15.616
AS - Asia 11.716
SA - Sud America 980
Continente sconosciuto - Info sul continente non disponibili 431
AF - Africa 163
OC - Oceania 10
Totale 47.489
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Nazione #
US - Stati Uniti d'America 18.296
IT - Italia 3.897
SG - Singapore 3.341
GB - Regno Unito 2.810
VN - Vietnam 2.703
CN - Cina 2.467
DE - Germania 2.419
FR - Francia 2.262
RU - Federazione Russa 1.274
UA - Ucraina 762
BR - Brasile 748
KR - Corea 704
HK - Hong Kong 659
NL - Olanda 363
IE - Irlanda 358
IN - India 351
TR - Turchia 348
CH - Svizzera 260
SE - Svezia 258
FI - Finlandia 253
AT - Austria 193
BD - Bangladesh 192
CA - Canada 181
BE - Belgio 156
JP - Giappone 132
ID - Indonesia 113
MY - Malesia 107
PH - Filippine 100
TW - Taiwan 83
IQ - Iraq 72
TH - Thailandia 66
AR - Argentina 63
PK - Pakistan 55
ES - Italia 53
PL - Polonia 45
EU - Europa 42
MX - Messico 41
CO - Colombia 38
EC - Ecuador 37
SN - Senegal 35
IR - Iran 31
JO - Giordania 31
BG - Bulgaria 28
CL - Cile 28
IL - Israele 27
ZA - Sudafrica 24
VE - Venezuela 23
KE - Kenya 21
MA - Marocco 21
UZ - Uzbekistan 20
AP - ???statistics.table.value.countryCode.AP??? 19
RO - Romania 19
SA - Arabia Saudita 19
AE - Emirati Arabi Uniti 17
PY - Paraguay 17
NO - Norvegia 15
NP - Nepal 15
LT - Lituania 13
DK - Danimarca 12
DZ - Algeria 12
EE - Estonia 12
EG - Egitto 12
PT - Portogallo 12
CZ - Repubblica Ceca 11
HR - Croazia 11
PE - Perù 11
AU - Australia 10
AZ - Azerbaigian 10
JM - Giamaica 10
KZ - Kazakistan 10
BY - Bielorussia 9
HU - Ungheria 9
TN - Tunisia 9
BO - Bolivia 8
CR - Costa Rica 8
GR - Grecia 8
AL - Albania 7
DO - Repubblica Dominicana 7
GE - Georgia 7
GH - Ghana 7
LU - Lussemburgo 7
SY - Repubblica araba siriana 7
AM - Armenia 6
HN - Honduras 6
KG - Kirghizistan 6
LB - Libano 6
OM - Oman 5
RS - Serbia 5
TT - Trinidad e Tobago 5
UY - Uruguay 5
BB - Barbados 4
CI - Costa d'Avorio 4
GT - Guatemala 4
KW - Kuwait 4
NG - Nigeria 4
SI - Slovenia 4
BH - Bahrain 3
BS - Bahamas 3
MU - Mauritius 3
NI - Nicaragua 3
Totale 47.031
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Città #
Ashburn 3.924
Southend 2.459
Singapore 1.867
Seattle 1.576
Fairfield 1.136
San Jose 1.017
Chandler 930
Turin 839
Beijing 777
Ho Chi Minh City 710
Hanoi 653
Woodbridge 551
Princeton 540
Santa Clara 539
Houston 520
Hong Kong 518
Ann Arbor 506
Cambridge 473
Torino 460
Boardman 448
Wilmington 441
Jacksonville 385
Berlin 365
Seoul 343
Council Bluffs 316
Dublin 311
Los Angeles 306
Milan 295
Dallas 260
San Ramon 255
Izmir 248
Bern 211
Bologna 198
Saint Petersburg 184
Lauterbourg 183
Helsinki 164
Brussels 146
Chicago 140
Rome 139
San Donato Milanese 130
Da Nang 128
Buffalo 124
Hefei 124
Zhengzhou 120
Vienna 119
North Bergen 114
Shanghai 107
Zaporozhye 96
Haiphong 95
Baltimore 93
Frankfurt 91
New York 90
Amsterdam 89
San Francisco 87
Guangzhou 86
Jakarta 85
Pennsylvania Furnace 83
Moscow 81
Fremont 75
Bremen 72
Shenzhen 71
Overberg 70
São Paulo 62
Frankfurt am Main 61
Hangzhou 60
Munich 60
Toronto 58
Lappeenranta 56
Paris 56
Mountain View 55
Padua 54
Monopoli 53
Des Moines 52
Redwood City 52
Tokyo 47
Piscataway 46
Istanbul 44
San Diego 44
Figino 43
Valfenera 42
Columbus 41
Nuremberg 41
Hải Dương 40
London 40
Menlo Park 36
The Dalles 34
Washington 34
Atlanta 32
Bangkok 31
Groningen 31
Overland Park 30
Rio de Janeiro 29
Turku 29
Biên Hòa 28
Herkenbosch 27
Nha Trang 27
Norwalk 27
Wenzhou 27
Lecce 26
Orem 26
Totale 29.144
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Nome #
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 708
A generalized drift-diffusion model for rectifying Schottky contact simulation 521
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 511
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations 494
Alloy scattering in AlGaN and InGaN: A numerical study 491
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 472
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 469
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 464
Large-signal device simulation in time- and frequency-domain: a comparison 461
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model 450
Role of defects in the thermal droop of InGaN-based light emitting diodes 448
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors 432
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 414
Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis 412
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 400
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 389
A numerical study of Auger recombination in bulk InGaN 389
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 383
Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems 382
DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS 371
Modeling challenges for high-efficiency visible light-emitting diodes 370
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 358
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 356
A numerical study of carrier impact ionization in AlGaN 354
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions - Part I: Large-Signal Sensitivity 354
A numerical study of low- and high-field carrier transport properties in In0.18Al0.82N lattice-matched to GaN 352
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach 352
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 345
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 344
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties 344
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 343
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 334
VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator 331
Many-valley electron transport in AlGaAs VCSELs 330
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 326
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II - Small-Signal and Conversion Matrix Sensitivity 325
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 325
A reduced-order technique for the acceleration of electronic structure calculations 324
Numerical analysis of indirect Auger transitions in InGaN 323
Simulation of Quantum Dot Solar Cells Including Carrier Intersubband Dynamics and Transport 323
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation 322
Innovative techniques for device large-signal noise simulations 314
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 314
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 312
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 305
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study 304
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications 302
Auger recombination in bulk InGaN and quantum wells: a numerical simulation study 301
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium 300
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 297
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 297
Theory of high field carrier transport and impact ionization in ZnO 297
Full-band Monte Carlo simulation of HgCdTe APDs 294
Microwave device optimization through efficient numerical simulation 294
Low-frequency noise conversion modeling in RF devices under forced nonlinear operation 291
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook 288
Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D 288
TCAD-Assisted Progress on the Cisco Platform Toward Low-Bias 200 Gbit/s vertical-pin Ge- on-Si Waveguide Photodetectors 287
A novel reduced-order model for full-wave waveguide analysis 285
Application of physical models to circuit simulations 280
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 279
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells 278
Self-Consistent Coupled Carrier Transport Full-Wave EM Analysis of Semiconductor Travelling-Wave Devices 276
Full-band Monte Carlo simulation of HgCdTe APDs 276
Accurate simulation of travelling-wave electroabsorption modulators through a novel coupled electromagnetic and carrier-transport model 275
Key issues in trap-assisted low-frequency device noise simulation in nonlinear large-signal conditions 274
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 274
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators 271
Physics-based mixer noise simulation 269
A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures 269
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section 268
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 266
Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model 265
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe 264
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 262
Auger transitions and their signatures in III-nitride LEDs: a full-band modeling 262
Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO 259
Physics-based noise modelling of semiconductor devices in large-signal operation including low-frequency noise conversion effects 258
Modeling Infrared Superlattice Photodetectors: From Nonequilibrium Green’s Functions to Quantum-Corrected Drift Diffusion 258
Nonequilibrium Green’s Function Modeling of type-II Superlattice Detectors and its Connection to Semiclassical Approaches 256
Accurate and efficient numerical quasi-TEM modeling of coplanarwaveguides for high-speed electro-optic modulators 254
A 2D Full-Band Monte Carlo Study of HgCdTe-Based Avalanche Photodiodes 254
Physics-based design of III-nitride and ZnO LEDs: from material properties to device optimization 254
Ab initio, nonlocal pseudopotential, and full-zone k*p computation of the electronic structure of wurtzite BeO 253
A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications 253
Fast, reduced order full-wave FEM analysis of broadband traveling-wave electrooptical modulators 249
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 249
GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth 249
Two-dimensional physics-based low-frequency noise modeling of bipolar semiconductor devices in small- and large-signal operation 248
Kinetic and Partial-Differential Equation Modeling of Noise in Schottky Barrier Diodes: a Comparison 248
Analysis and Design of Plasmonic-Organic Hybrid Electro-Optic Modulators Based on Directional Couplers 247
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 246
Electron Transport 246
Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation 245
Next-generation long-wavelength infrared detector arrays: competing technologies and modeling challenges 244
Quantum Efficiency and Crosstalk in Subwavelength HgCdTe Dual Band Infrared Detectors 244
Theory of high field transport and impact ionization in III-nitride semiconductors 243
Bridging scales in multiphysics VCSEL modeling 239
Fast higher-order full-wave FEM analysis of traveling-wave optoelectronic devices 236
Experimental electron mobility in ZnO: a reassessment through Monte Carlo simulation 233
Totale 32.139
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Categoria #
all - tutte 130.526
article - articoli 64.613
book - libri 0
conference - conferenze 62.692
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 3.221
Totale 261.052
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.396 0 177 92 233 206 165 76 104 249 167 396 531
2022/20233.359 303 553 77 332 467 434 218 130 337 44 186 278
2023/20241.282 66 132 61 98 72 92 68 75 100 100 252 166
2024/20254.936 107 904 325 522 470 277 292 290 654 259 368 468
2025/202612.707 615 602 751 969 853 815 2.041 911 2.872 1.163 297 818
2026/2027468 395 73 0 0 0 0 0 0 0 0 0 0
Totale 47.489