PORTO @ Archivio Istituzionale della Ricerca

BERTAZZI, FRANCESCO
 Distribuzione geografica
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Continente #
NA - Nord America 16.266
EU - Europa 14.036
AS - Asia 7.162
SA - Sud America 841
AF - Africa 119
Continente sconosciuto - Info sul continente non disponibili 12
OC - Oceania 6
Totale 38.442
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Nazione #
US - Stati Uniti d'America 16.075
IT - Italia 3.473
GB - Regno Unito 2.780
SG - Singapore 2.731
DE - Germania 2.380
CN - Cina 2.364
FR - Francia 2.073
UA - Ucraina 756
BR - Brasile 677
RU - Federazione Russa 532
KR - Corea 521
IE - Irlanda 354
TR - Turchia 344
NL - Olanda 329
CH - Svizzera 245
FI - Finlandia 240
SE - Svezia 228
HK - Hong Kong 223
VN - Vietnam 199
AT - Austria 188
BE - Belgio 151
IN - India 140
CA - Canada 138
ID - Indonesia 108
MY - Malesia 99
JP - Giappone 93
AR - Argentina 50
EU - Europa 42
ES - Italia 40
PL - Polonia 40
PK - Pakistan 39
IQ - Iraq 37
BD - Bangladesh 36
SN - Senegal 34
IR - Iran 31
MX - Messico 30
TW - Taiwan 28
BG - Bulgaria 27
JO - Giordania 27
EC - Ecuador 26
IL - Israele 26
CO - Colombia 23
AP - ???statistics.table.value.countryCode.AP??? 19
RO - Romania 19
UZ - Uzbekistan 19
CL - Cile 18
KE - Kenya 17
SA - Arabia Saudita 17
ZA - Sudafrica 17
NO - Norvegia 15
AE - Emirati Arabi Uniti 13
PY - Paraguay 13
VE - Venezuela 13
DK - Danimarca 12
EE - Estonia 12
LT - Lituania 12
NP - Nepal 11
AZ - Azerbaigian 9
CZ - Repubblica Ceca 9
DZ - Algeria 9
HR - Croazia 9
KZ - Kazakistan 9
MA - Marocco 9
PE - Perù 9
PT - Portogallo 9
BY - Bielorussia 8
EG - Egitto 8
HU - Ungheria 8
GH - Ghana 7
GR - Grecia 7
LU - Lussemburgo 7
AM - Armenia 6
AU - Australia 6
DO - Repubblica Dominicana 6
PH - Filippine 6
BO - Bolivia 5
GE - Georgia 5
TN - Tunisia 5
UY - Uruguay 5
AL - Albania 4
KG - Kirghizistan 4
KW - Kuwait 4
LB - Libano 4
TH - Thailandia 4
BB - Barbados 3
BH - Bahrain 3
CI - Costa d'Avorio 3
JM - Giamaica 3
NG - Nigeria 3
NI - Nicaragua 3
OM - Oman 3
SY - Repubblica araba siriana 3
BS - Bahamas 2
CR - Costa Rica 2
ET - Etiopia 2
KH - Cambogia 2
PS - Palestinian Territory 2
RS - Serbia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BN - Brunei Darussalam 1
Totale 38.423
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Città #
Ashburn 3.644
Southend 2.459
Seattle 1.573
Singapore 1.504
Fairfield 1.136
Chandler 930
Turin 796
Beijing 760
Woodbridge 551
Princeton 540
Houston 516
Ann Arbor 506
Santa Clara 494
Cambridge 472
Torino 460
Boardman 443
Wilmington 441
Jacksonville 384
Berlin 363
Dublin 310
San Ramon 255
Izmir 247
Dallas 240
Seoul 219
Bern 211
Council Bluffs 209
Bologna 193
Saint Petersburg 184
Hong Kong 154
Helsinki 153
Brussels 145
Milan 142
Chicago 134
San Donato Milanese 130
Hefei 124
Zhengzhou 120
Vienna 117
Buffalo 116
Los Angeles 113
North Bergen 111
Shanghai 103
Zaporozhye 96
Frankfurt 91
Baltimore 90
San Francisco 86
Jakarta 85
Amsterdam 84
Guangzhou 83
Pennsylvania Furnace 83
Fremont 75
Bremen 72
Overberg 70
Shenzhen 70
Rome 63
Ho Chi Minh City 62
Hanoi 60
Munich 60
Hangzhou 59
San Jose 56
Mountain View 55
Lappeenranta 54
Padua 54
Monopoli 53
Redwood City 52
São Paulo 52
Toronto 51
Paris 50
Des Moines 49
Frankfurt am Main 42
Istanbul 42
Valfenera 42
San Diego 41
Piscataway 39
New York 37
Nuremberg 37
London 36
Menlo Park 36
Washington 33
Columbus 31
Tokyo 31
Overland Park 30
Turku 29
Herkenbosch 27
Norwalk 27
Wenzhou 27
Atlanta 25
Lecce 25
Rio de Janeiro 25
Malatya 24
St Petersburg 24
Guiyang 23
Sofia 23
Yubileyny 23
Kharkiv 22
Kunming 20
Melun 19
Moscow 18
Putian 18
Taipei 18
Chennai 17
Totale 24.428
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Nome #
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 630
A generalized drift-diffusion model for rectifying Schottky contact simulation 487
Alloy scattering in AlGaN and InGaN: A numerical study 440
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 439
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 430
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 423
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 422
Large-signal device simulation in time- and frequency-domain: a comparison 415
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model 404
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations 397
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors 394
Role of defects in the thermal droop of InGaN-based light emitting diodes 392
Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis 383
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 356
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 349
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 341
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 332
A numerical study of carrier impact ionization in AlGaN 330
Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems 326
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 324
A numerical study of Auger recombination in bulk InGaN 323
DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS 321
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 319
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 315
A numerical study of low- and high-field carrier transport properties in In0.18Al0.82N lattice-matched to GaN 306
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties 305
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 304
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 301
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions - Part I: Large-Signal Sensitivity 295
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 293
Modeling challenges for high-efficiency visible light-emitting diodes 290
Innovative techniques for device large-signal noise simulations 288
A reduced-order technique for the acceleration of electronic structure calculations 285
Simulation of Quantum Dot Solar Cells Including Carrier Intersubband Dynamics and Transport 283
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 281
Many-valley electron transport in AlGaAs VCSELs 281
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II - Small-Signal and Conversion Matrix Sensitivity 278
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 275
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 273
Auger recombination in bulk InGaN and quantum wells: a numerical simulation study 273
Numerical analysis of indirect Auger transitions in InGaN 271
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook 266
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 266
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 265
Theory of high field carrier transport and impact ionization in ZnO 265
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study 264
Full-band Monte Carlo simulation of HgCdTe APDs 262
Application of physical models to circuit simulations 261
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 260
VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator 259
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation 258
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium 258
Low-frequency noise conversion modeling in RF devices under forced nonlinear operation 256
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach 255
Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D 254
Key issues in trap-assisted low-frequency device noise simulation in nonlinear large-signal conditions 253
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications 253
Accurate simulation of travelling-wave electroabsorption modulators through a novel coupled electromagnetic and carrier-transport model 253
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 246
Full-band Monte Carlo simulation of HgCdTe APDs 245
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells 244
A novel reduced-order model for full-wave waveguide analysis 244
Microwave device optimization through efficient numerical simulation 242
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators 241
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 241
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 240
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section 239
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe 238
Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model 237
A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications 236
A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures 235
Auger transitions and their signatures in III-nitride LEDs: a full-band modeling 234
Self-Consistent Coupled Carrier Transport Full-Wave EM Analysis of Semiconductor Travelling-Wave Devices 233
A 2D Full-Band Monte Carlo Study of HgCdTe-Based Avalanche Photodiodes 232
GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth 232
Physics-based mixer noise simulation 231
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 231
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 229
Kinetic and Partial-Differential Equation Modeling of Noise in Schottky Barrier Diodes: a Comparison 228
Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO 227
Accurate and efficient numerical quasi-TEM modeling of coplanarwaveguides for high-speed electro-optic modulators 226
Two-dimensional physics-based low-frequency noise modeling of bipolar semiconductor devices in small- and large-signal operation 224
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 224
Fast, reduced order full-wave FEM analysis of broadband traveling-wave electrooptical modulators 223
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 221
Ab initio, nonlocal pseudopotential, and full-zone k*p computation of the electronic structure of wurtzite BeO 219
Fast higher-order full-wave FEM analysis of traveling-wave optoelectronic devices 218
Physics-based noise modelling of semiconductor devices in large-signal operation including low-frequency noise conversion effects 216
Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation 214
Auger lifetime in narrow gap semiconductors 211
Experimental electron mobility in ZnO: a reassessment through Monte Carlo simulation 211
Electron Transport 210
Saga of efficiency degradation at high injection in InGaN light emitting diodes 209
Ab initio electron-phonon interactions for high-field transport simulation in ZnO 208
Next-generation long-wavelength infrared detector arrays: competing technologies and modeling challenges 206
Quantum Efficiency and Crosstalk in Subwavelength HgCdTe Dual Band Infrared Detectors 198
FEM-based reduced-order model for steady-state skin-effect analysis in lossy lines 198
Ab initio, semi-empirical pseudopotential, and full-zone k*p electronic structure of CdTe, HgTe and HgCdTe 195
Theory of high field transport and impact ionization in III-nitride semiconductors 194
Physics-based design of III-nitride and ZnO LEDs: from material properties to device optimization 192
Totale 28.004
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Categoria #
all - tutte 112.759
article - articoli 55.756
book - libri 0
conference - conferenze 54.149
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.854
Totale 225.518
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.460 0 0 0 0 0 283 162 161 219 352 163 120
2021/20222.580 184 177 92 233 206 165 76 104 249 167 396 531
2022/20233.359 303 553 77 332 467 434 218 130 337 44 186 278
2023/20241.282 66 132 61 98 72 92 68 75 100 100 252 166
2024/20254.936 107 904 325 522 470 277 292 290 654 259 368 468
2025/20264.546 615 602 751 969 853 756 0 0 0 0 0 0
Totale 38.860