PORTO @ Archivio Istituzionale della Ricerca

BERTAZZI, FRANCESCO
 Distribuzione geografica
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Continente #
NA - Nord America 15.786
EU - Europa 13.842
AS - Asia 5.643
SA - Sud America 642
AF - Africa 93
Continente sconosciuto - Info sul continente non disponibili 12
OC - Oceania 4
Totale 36.022
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Nazione #
US - Stati Uniti d'America 15.625
IT - Italia 3.401
GB - Regno Unito 2.766
DE - Germania 2.362
CN - Cina 2.195
FR - Francia 2.051
SG - Singapore 1.700
UA - Ucraina 752
BR - Brasile 551
RU - Federazione Russa 525
KR - Corea 520
IE - Irlanda 352
TR - Turchia 339
NL - Olanda 329
CH - Svizzera 243
SE - Svezia 221
FI - Finlandia 219
HK - Hong Kong 188
AT - Austria 186
BE - Belgio 151
CA - Canada 129
IN - India 126
MY - Malesia 96
ID - Indonesia 88
JP - Giappone 78
VN - Vietnam 63
EU - Europa 42
ES - Italia 32
PL - Polonia 32
SN - Senegal 32
PK - Pakistan 31
IR - Iran 30
TW - Taiwan 27
BG - Bulgaria 26
IL - Israele 25
BD - Bangladesh 23
JO - Giordania 22
AR - Argentina 21
IQ - Iraq 20
AP - ???statistics.table.value.countryCode.AP??? 19
RO - Romania 18
MX - Messico 17
SA - Arabia Saudita 16
EC - Ecuador 15
NO - Norvegia 15
CO - Colombia 14
AE - Emirati Arabi Uniti 13
ZA - Sudafrica 13
CL - Cile 12
DK - Danimarca 12
EE - Estonia 12
KE - Kenya 12
LT - Lituania 12
UZ - Uzbekistan 11
CZ - Repubblica Ceca 9
HR - Croazia 9
PT - Portogallo 9
AZ - Azerbaigian 8
BY - Bielorussia 7
GH - Ghana 7
GR - Grecia 7
HU - Ungheria 7
LU - Lussemburgo 7
NP - Nepal 7
PE - Perù 7
PY - Paraguay 7
VE - Venezuela 7
DZ - Algeria 6
KZ - Kazakistan 6
AU - Australia 4
EG - Egitto 4
MA - Marocco 4
TN - Tunisia 4
AL - Albania 3
AM - Armenia 3
BO - Bolivia 3
CI - Costa d'Avorio 3
NG - Nigeria 3
NI - Nicaragua 3
PH - Filippine 3
TH - Thailandia 3
UY - Uruguay 3
BB - Barbados 2
BS - Bahamas 2
CR - Costa Rica 2
DO - Repubblica Dominicana 2
ET - Etiopia 2
KG - Kirghizistan 2
KW - Kuwait 2
RS - Serbia 2
SY - Repubblica araba siriana 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BH - Bahrain 1
GE - Georgia 1
GY - Guiana 1
HN - Honduras 1
IM - Isola di Man 1
JM - Giamaica 1
KH - Cambogia 1
LB - Libano 1
Totale 36.010
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Città #
Ashburn 3.533
Southend 2.459
Seattle 1.573
Fairfield 1.136
Singapore 944
Chandler 930
Turin 770
Beijing 722
Woodbridge 551
Princeton 540
Houston 514
Ann Arbor 506
Santa Clara 485
Cambridge 472
Torino 460
Boardman 443
Wilmington 441
Jacksonville 384
Berlin 363
Dublin 309
San Ramon 255
Izmir 246
Dallas 236
Seoul 218
Bern 211
Council Bluffs 202
Bologna 192
Saint Petersburg 184
Helsinki 151
Brussels 145
Milan 138
Chicago 134
San Donato Milanese 130
Hefei 124
Zhengzhou 120
Hong Kong 119
Vienna 115
Shanghai 101
Zaporozhye 96
Frankfurt 91
Baltimore 90
San Francisco 86
Amsterdam 84
Jakarta 84
Buffalo 83
Pennsylvania Furnace 83
Guangzhou 80
Los Angeles 76
Fremont 75
Bremen 72
Overberg 70
Shenzhen 70
Rome 61
Munich 60
Hangzhou 59
Mountain View 55
Monopoli 53
Padua 53
Redwood City 52
Paris 50
Toronto 50
Des Moines 49
São Paulo 44
Lappeenranta 43
Istanbul 42
Valfenera 42
San Diego 41
San Jose 40
Piscataway 39
Menlo Park 36
Nuremberg 36
London 35
Washington 33
Columbus 31
Frankfurt am Main 30
Overland Park 30
New York 28
Herkenbosch 27
Norwalk 27
Hanoi 26
Wenzhou 26
Lecce 25
Malatya 24
Rio de Janeiro 24
St Petersburg 24
Guiyang 23
Sofia 23
Yubileyny 23
Kharkiv 22
Turku 22
Atlanta 21
Kunming 20
Melun 19
Moscow 18
Putian 18
Taipei 18
Tokyo 18
Kiev 17
Lake Forest 17
Miami 17
Totale 23.287
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Nome #
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 603
A generalized drift-diffusion model for rectifying Schottky contact simulation 466
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 422
Alloy scattering in AlGaN and InGaN: A numerical study 419
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 412
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 409
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 403
Large-signal device simulation in time- and frequency-domain: a comparison 397
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model 391
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations 383
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors 381
Role of defects in the thermal droop of InGaN-based light emitting diodes 378
Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis 376
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 340
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 334
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 331
A numerical study of carrier impact ionization in AlGaN 322
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 316
A numerical study of Auger recombination in bulk InGaN 311
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 308
Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems 307
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 307
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 305
DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS 302
A numerical study of low- and high-field carrier transport properties in In0.18Al0.82N lattice-matched to GaN 299
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties 294
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 285
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 284
Modeling challenges for high-efficiency visible light-emitting diodes 283
Innovative techniques for device large-signal noise simulations 281
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 280
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions - Part I: Large-Signal Sensitivity 279
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 270
Many-valley electron transport in AlGaAs VCSELs 269
A reduced-order technique for the acceleration of electronic structure calculations 269
Simulation of Quantum Dot Solar Cells Including Carrier Intersubband Dynamics and Transport 269
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 266
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II - Small-Signal and Conversion Matrix Sensitivity 262
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 259
Numerical analysis of indirect Auger transitions in InGaN 259
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook 258
Auger recombination in bulk InGaN and quantum wells: a numerical simulation study 257
Theory of high field carrier transport and impact ionization in ZnO 253
Application of physical models to circuit simulations 252
Full-band Monte Carlo simulation of HgCdTe APDs 252
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 252
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 252
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation 250
Low-frequency noise conversion modeling in RF devices under forced nonlinear operation 248
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium 246
Accurate simulation of travelling-wave electroabsorption modulators through a novel coupled electromagnetic and carrier-transport model 245
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 245
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications 243
VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator 243
Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D 242
Key issues in trap-assisted low-frequency device noise simulation in nonlinear large-signal conditions 241
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study 240
Full-band Monte Carlo simulation of HgCdTe APDs 237
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach 236
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 234
A novel reduced-order model for full-wave waveguide analysis 234
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section 232
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells 231
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 231
Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model 229
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators 229
Microwave device optimization through efficient numerical simulation 228
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 228
A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications 226
Physics-based mixer noise simulation 225
A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures 224
Auger transitions and their signatures in III-nitride LEDs: a full-band modeling 223
Kinetic and Partial-Differential Equation Modeling of Noise in Schottky Barrier Diodes: a Comparison 223
A 2D Full-Band Monte Carlo Study of HgCdTe-Based Avalanche Photodiodes 222
Self-Consistent Coupled Carrier Transport Full-Wave EM Analysis of Semiconductor Travelling-Wave Devices 221
GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth 221
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe 221
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 220
Accurate and efficient numerical quasi-TEM modeling of coplanarwaveguides for high-speed electro-optic modulators 219
Two-dimensional physics-based low-frequency noise modeling of bipolar semiconductor devices in small- and large-signal operation 218
Fast, reduced order full-wave FEM analysis of broadband traveling-wave electrooptical modulators 217
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 217
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 216
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 216
Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO 212
Fast higher-order full-wave FEM analysis of traveling-wave optoelectronic devices 210
Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation 207
Ab initio, nonlocal pseudopotential, and full-zone k*p computation of the electronic structure of wurtzite BeO 207
Auger lifetime in narrow gap semiconductors 206
Physics-based noise modelling of semiconductor devices in large-signal operation including low-frequency noise conversion effects 202
Saga of efficiency degradation at high injection in InGaN light emitting diodes 200
Ab initio electron-phonon interactions for high-field transport simulation in ZnO 198
Electron Transport 196
Experimental electron mobility in ZnO: a reassessment through Monte Carlo simulation 196
Next-generation long-wavelength infrared detector arrays: competing technologies and modeling challenges 191
FEM-based reduced-order model for steady-state skin-effect analysis in lossy lines 191
Ab initio, semi-empirical pseudopotential, and full-zone k*p electronic structure of CdTe, HgTe and HgCdTe 188
Theory of high field transport and impact ionization in III-nitride semiconductors 186
Model for carrier capture time through phonon emission in InGaN/GaN quantum wells 186
Physics-based design of III-nitride and ZnO LEDs: from material properties to device optimization 183
Totale 26.787
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Categoria #
all - tutte 105.936
article - articoli 52.422
book - libri 0
conference - conferenze 50.830
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.684
Totale 211.872
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.866 0 0 0 284 122 283 162 161 219 352 163 120
2021/20222.580 184 177 92 233 206 165 76 104 249 167 396 531
2022/20233.359 303 553 77 332 467 434 218 130 337 44 186 278
2023/20241.282 66 132 61 98 72 92 68 75 100 100 252 166
2024/20254.936 107 904 325 522 470 277 292 290 654 259 368 468
2025/20262.117 615 602 751 149 0 0 0 0 0 0 0 0
Totale 36.431