PORTO @ Archivio Istituzionale della Ricerca

BERTAZZI, FRANCESCO
 Distribuzione geografica
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Continente #
NA - Nord America 14.533
EU - Europa 13.171
AS - Asia 3.243
AF - Africa 56
SA - Sud America 35
Continente sconosciuto - Info sul continente non disponibili 11
OC - Oceania 4
Totale 31.053
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Nazione #
US - Stati Uniti d'America 14.421
IT - Italia 3.181
GB - Regno Unito 2.746
DE - Germania 2.257
FR - Francia 1.973
CN - Cina 1.370
UA - Ucraina 742
SG - Singapore 637
RU - Federazione Russa 465
IE - Irlanda 349
TR - Turchia 321
NL - Olanda 312
KR - Corea 310
CH - Svizzera 243
SE - Svezia 215
FI - Finlandia 177
BE - Belgio 151
IN - India 114
CA - Canada 112
AT - Austria 108
MY - Malesia 96
ID - Indonesia 87
HK - Hong Kong 83
JP - Giappone 70
EU - Europa 42
SN - Senegal 31
IR - Iran 28
ES - Italia 26
BG - Bulgaria 25
IL - Israele 24
PL - Polonia 23
TW - Taiwan 22
JO - Giordania 20
PK - Pakistan 20
AP - ???statistics.table.value.countryCode.AP??? 19
RO - Romania 18
VN - Vietnam 18
NO - Norvegia 14
BR - Brasile 13
SA - Arabia Saudita 13
AE - Emirati Arabi Uniti 12
DK - Danimarca 12
EE - Estonia 12
LT - Lituania 12
CL - Cile 9
HR - Croazia 9
PT - Portogallo 8
GH - Ghana 7
CO - Colombia 6
CZ - Repubblica Ceca 6
GR - Grecia 6
LU - Lussemburgo 6
BY - Bielorussia 5
HU - Ungheria 5
AR - Argentina 4
AU - Australia 4
CI - Costa d'Avorio 3
DZ - Algeria 3
NG - Nigeria 3
PE - Perù 3
TN - Tunisia 3
AL - Albania 2
IQ - Iraq 2
KE - Kenya 2
PH - Filippine 2
UZ - Uzbekistan 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AM - Armenia 1
BD - Bangladesh 1
EG - Egitto 1
ET - Etiopia 1
RS - Serbia 1
SC - Seychelles 1
SY - Repubblica araba siriana 1
ZA - Sudafrica 1
Totale 31.053
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Città #
Ashburn 3.344
Southend 2.459
Seattle 1.568
Fairfield 1.136
Chandler 930
Turin 671
Woodbridge 551
Princeton 540
Beijing 529
Houston 514
Ann Arbor 506
Singapore 475
Cambridge 472
Torino 460
Boardman 443
Wilmington 441
Jacksonville 384
Berlin 363
Dublin 306
San Ramon 255
Izmir 244
Bern 211
Bologna 191
Saint Petersburg 184
Council Bluffs 171
Brussels 145
Helsinki 145
San Donato Milanese 130
Chicago 127
Santa Clara 124
Zhengzhou 115
Milan 108
Seoul 107
Vienna 99
Zaporozhye 96
Frankfurt 91
Shanghai 91
Baltimore 90
Jakarta 84
Pennsylvania Furnace 83
Amsterdam 81
San Francisco 78
Fremont 75
Bremen 72
Overberg 70
Guangzhou 69
Shenzhen 69
Hangzhou 56
Mountain View 55
Rome 55
Monopoli 53
Padua 53
Redwood City 52
Des Moines 49
Toronto 47
Paris 44
Valfenera 42
San Diego 41
San Jose 40
Buffalo 39
Piscataway 39
Istanbul 36
Menlo Park 36
Washington 32
Lappeenranta 30
Overland Park 30
Herkenbosch 27
Norwalk 27
London 26
Wenzhou 26
Lecce 24
Malatya 24
Sofia 23
Yubileyny 23
Kharkiv 22
Frankfurt am Main 20
Atlanta 19
Columbus 19
Melun 19
New York 18
Putian 18
Kiev 17
Lake Forest 17
Los Angeles 17
Rivoli 17
Miami 16
Nanjing 16
Redmond 16
Austin 15
Durgapur 15
Hanoi 15
Kunming 15
Madrid 15
Ottawa 15
Andover 14
Chennai 14
Dearborn 14
Hong Kong 14
Jamaica Plain 14
San Antonio 14
Totale 20.951
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Nome #
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 566
A generalized drift-diffusion model for rectifying Schottky contact simulation 434
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 379
Alloy scattering in AlGaN and InGaN: A numerical study 378
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 377
Large-signal device simulation in time- and frequency-domain: a comparison 369
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 369
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors 361
Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis 359
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 359
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model 359
Role of defects in the thermal droop of InGaN-based light emitting diodes 351
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations 346
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 319
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 306
A numerical study of carrier impact ionization in AlGaN 301
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 297
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 297
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 294
A numerical study of low- and high-field carrier transport properties in In0.18Al0.82N lattice-matched to GaN 287
Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems 287
DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS 284
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 283
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 275
A numerical study of Auger recombination in bulk InGaN 273
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties 272
Innovative techniques for device large-signal noise simulations 263
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 263
Modeling challenges for high-efficiency visible light-emitting diodes 262
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 259
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 258
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 257
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions - Part I: Large-Signal Sensitivity 257
A reduced-order technique for the acceleration of electronic structure calculations 252
Many-valley electron transport in AlGaAs VCSELs 248
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook 247
Simulation of Quantum Dot Solar Cells Including Carrier Intersubband Dynamics and Transport 245
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 244
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 243
Full-band Monte Carlo simulation of HgCdTe APDs 237
Low-frequency noise conversion modeling in RF devices under forced nonlinear operation 237
Auger recombination in bulk InGaN and quantum wells: a numerical simulation study 235
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 235
Application of physical models to circuit simulations 234
Accurate simulation of travelling-wave electroabsorption modulators through a novel coupled electromagnetic and carrier-transport model 234
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation 232
Theory of high field carrier transport and impact ionization in ZnO 232
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 231
Key issues in trap-assisted low-frequency device noise simulation in nonlinear large-signal conditions 229
Numerical analysis of indirect Auger transitions in InGaN 228
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium 227
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II - Small-Signal and Conversion Matrix Sensitivity 226
Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D 225
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section 224
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 223
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications 222
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 222
A novel reduced-order model for full-wave waveguide analysis 222
Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model 217
Full-band Monte Carlo simulation of HgCdTe APDs 216
Kinetic and Partial-Differential Equation Modeling of Noise in Schottky Barrier Diodes: a Comparison 213
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators 212
A 2D Full-Band Monte Carlo Study of HgCdTe-Based Avalanche Photodiodes 210
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 210
GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth 208
A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications 208
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study 207
Physics-based mixer noise simulation 206
Fast, reduced order full-wave FEM analysis of broadband traveling-wave electrooptical modulators 205
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 205
Auger transitions and their signatures in III-nitride LEDs: a full-band modeling 205
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 205
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 205
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 204
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells 203
Accurate and efficient numerical quasi-TEM modeling of coplanarwaveguides for high-speed electro-optic modulators 201
Microwave device optimization through efficient numerical simulation 200
A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures 200
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe 199
Two-dimensional physics-based low-frequency noise modeling of bipolar semiconductor devices in small- and large-signal operation 198
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 198
Self-Consistent Coupled Carrier Transport Full-Wave EM Analysis of Semiconductor Travelling-Wave Devices 195
Fast higher-order full-wave FEM analysis of traveling-wave optoelectronic devices 194
Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO 193
Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation 190
Auger lifetime in narrow gap semiconductors 190
Ab initio, nonlocal pseudopotential, and full-zone k*p computation of the electronic structure of wurtzite BeO 188
Ab initio electron-phonon interactions for high-field transport simulation in ZnO 187
Physics-based noise modelling of semiconductor devices in large-signal operation including low-frequency noise conversion effects 186
Saga of efficiency degradation at high injection in InGaN light emitting diodes 185
Experimental electron mobility in ZnO: a reassessment through Monte Carlo simulation 183
Model for carrier capture time through phonon emission in InGaN/GaN quantum wells 180
Theory of high field transport and impact ionization in III-nitride semiconductors 179
FEM-based reduced-order model for steady-state skin-effect analysis in lossy lines 179
VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator 177
Electron Transport 173
Ab initio, semi-empirical pseudopotential, and full-zone k*p electronic structure of CdTe, HgTe and HgCdTe 172
Simulation of small-pitch HgCdTe photodetectors 172
A comprehensive numerical model of impact ionization in ZnO for high field device simulation 171
Electron and hole transport in bulk ZnO: A full band Monte Carlo study 171
Totale 24.635
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Categoria #
all - tutte 85.744
article - articoli 42.549
book - libri 0
conference - conferenze 40.979
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.216
Totale 171.488
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.310 0 0 0 0 368 348 353 411 429 202 113 86
2020/20212.540 285 277 112 284 122 283 162 161 219 352 163 120
2021/20222.580 184 177 92 233 206 165 76 104 249 167 396 531
2022/20233.359 303 553 77 332 467 434 218 130 337 44 186 278
2023/20241.282 66 132 61 98 72 92 68 75 100 100 252 166
2024/20252.047 107 904 325 522 189 0 0 0 0 0 0 0
Totale 31.425