PORTO @ Archivio Istituzionale della Ricerca

BERTAZZI, FRANCESCO
 Distribuzione geografica
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Continente #
NA - Nord America 16.168
EU - Europa 13.995
AS - Asia 6.968
SA - Sud America 760
AF - Africa 102
Continente sconosciuto - Info sul continente non disponibili 12
OC - Oceania 6
Totale 38.011
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Nazione #
US - Stati Uniti d'America 15.990
IT - Italia 3.471
GB - Regno Unito 2.773
SG - Singapore 2.673
DE - Germania 2.376
CN - Cina 2.347
FR - Francia 2.058
UA - Ucraina 754
BR - Brasile 623
RU - Federazione Russa 530
KR - Corea 521
IE - Irlanda 353
TR - Turchia 342
NL - Olanda 329
CH - Svizzera 245
FI - Finlandia 240
SE - Svezia 228
HK - Hong Kong 220
AT - Austria 187
VN - Vietnam 164
BE - Belgio 151
CA - Canada 133
IN - India 131
ID - Indonesia 101
MY - Malesia 98
JP - Giappone 89
EU - Europa 42
AR - Argentina 41
PL - Polonia 40
ES - Italia 38
PK - Pakistan 34
SN - Senegal 33
IR - Iran 30
BD - Bangladesh 29
TW - Taiwan 28
MX - Messico 27
BG - Bulgaria 26
IL - Israele 26
IQ - Iraq 25
EC - Ecuador 24
JO - Giordania 23
CO - Colombia 20
AP - ???statistics.table.value.countryCode.AP??? 19
RO - Romania 19
SA - Arabia Saudita 16
NO - Norvegia 15
ZA - Sudafrica 15
CL - Cile 14
UZ - Uzbekistan 14
AE - Emirati Arabi Uniti 13
KE - Kenya 13
DK - Danimarca 12
EE - Estonia 12
LT - Lituania 12
PY - Paraguay 12
CZ - Repubblica Ceca 9
HR - Croazia 9
NP - Nepal 9
PT - Portogallo 9
VE - Venezuela 9
AZ - Azerbaigian 8
BY - Bielorussia 8
DZ - Algeria 7
EG - Egitto 7
GH - Ghana 7
GR - Grecia 7
HU - Ungheria 7
KZ - Kazakistan 7
LU - Lussemburgo 7
PE - Perù 7
AU - Australia 6
BO - Bolivia 5
TN - Tunisia 5
DO - Repubblica Dominicana 4
KW - Kuwait 4
MA - Marocco 4
AL - Albania 3
AM - Armenia 3
CI - Costa d'Avorio 3
KG - Kirghizistan 3
LB - Libano 3
NG - Nigeria 3
NI - Nicaragua 3
PH - Filippine 3
TH - Thailandia 3
UY - Uruguay 3
BB - Barbados 2
BH - Bahrain 2
BS - Bahamas 2
CR - Costa Rica 2
ET - Etiopia 2
JM - Giamaica 2
KH - Cambogia 2
OM - Oman 2
RS - Serbia 2
SY - Repubblica araba siriana 2
A2 - ???statistics.table.value.countryCode.A2??? 1
GE - Georgia 1
GY - Guiana 1
HN - Honduras 1
Totale 37.998
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Città #
Ashburn 3.623
Southend 2.459
Seattle 1.573
Singapore 1.465
Fairfield 1.136
Chandler 930
Turin 796
Beijing 760
Woodbridge 551
Princeton 540
Houston 516
Ann Arbor 506
Santa Clara 494
Cambridge 472
Torino 460
Boardman 443
Wilmington 441
Jacksonville 384
Berlin 363
Dublin 310
San Ramon 255
Izmir 246
Dallas 240
Seoul 219
Bern 211
Council Bluffs 202
Bologna 193
Saint Petersburg 184
Helsinki 153
Hong Kong 151
Brussels 145
Milan 142
Chicago 134
San Donato Milanese 130
Hefei 124
Zhengzhou 120
Buffalo 116
Vienna 116
Los Angeles 105
Shanghai 103
Zaporozhye 96
North Bergen 93
Frankfurt 91
Baltimore 90
San Francisco 86
Jakarta 85
Amsterdam 84
Guangzhou 83
Pennsylvania Furnace 83
Fremont 75
Bremen 72
Overberg 70
Shenzhen 70
Rome 63
Munich 60
Hangzhou 59
Mountain View 55
Lappeenranta 54
Padua 54
Monopoli 53
Redwood City 52
Ho Chi Minh City 51
Paris 50
São Paulo 50
Toronto 50
Des Moines 49
Hanoi 49
San Jose 48
Istanbul 42
Valfenera 42
San Diego 41
Piscataway 39
Frankfurt am Main 38
Nuremberg 37
London 36
Menlo Park 36
New York 35
Washington 33
Columbus 31
Overland Park 30
Tokyo 29
Turku 29
Herkenbosch 27
Norwalk 27
Wenzhou 27
Lecce 25
Atlanta 24
Malatya 24
Rio de Janeiro 24
St Petersburg 24
Guiyang 23
Sofia 23
Yubileyny 23
Kharkiv 22
Kunming 20
Melun 19
Moscow 18
Putian 18
Taipei 18
Chennai 17
Totale 24.287
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Nome #
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 625
A generalized drift-diffusion model for rectifying Schottky contact simulation 478
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 438
Alloy scattering in AlGaN and InGaN: A numerical study 436
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 427
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 420
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 419
Large-signal device simulation in time- and frequency-domain: a comparison 413
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model 401
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations 396
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors 391
Role of defects in the thermal droop of InGaN-based light emitting diodes 390
Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis 383
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 353
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 344
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 340
A numerical study of carrier impact ionization in AlGaN 328
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 326
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 324
Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems 322
A numerical study of Auger recombination in bulk InGaN 322
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 318
DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS 317
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 313
A numerical study of low- and high-field carrier transport properties in In0.18Al0.82N lattice-matched to GaN 303
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties 302
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 300
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 295
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions - Part I: Large-Signal Sensitivity 291
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 290
Modeling challenges for high-efficiency visible light-emitting diodes 289
Innovative techniques for device large-signal noise simulations 287
Many-valley electron transport in AlGaAs VCSELs 281
A reduced-order technique for the acceleration of electronic structure calculations 281
Simulation of Quantum Dot Solar Cells Including Carrier Intersubband Dynamics and Transport 280
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 278
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II - Small-Signal and Conversion Matrix Sensitivity 276
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 274
Auger recombination in bulk InGaN and quantum wells: a numerical simulation study 272
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 271
Numerical analysis of indirect Auger transitions in InGaN 269
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 265
Theory of high field carrier transport and impact ionization in ZnO 264
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook 263
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study 263
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 262
Full-band Monte Carlo simulation of HgCdTe APDs 261
Application of physical models to circuit simulations 258
VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator 258
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 258
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation 256
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium 255
Low-frequency noise conversion modeling in RF devices under forced nonlinear operation 254
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach 254
Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D 252
Key issues in trap-assisted low-frequency device noise simulation in nonlinear large-signal conditions 251
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications 251
Accurate simulation of travelling-wave electroabsorption modulators through a novel coupled electromagnetic and carrier-transport model 251
Full-band Monte Carlo simulation of HgCdTe APDs 245
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 243
A novel reduced-order model for full-wave waveguide analysis 242
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells 241
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 240
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 239
Microwave device optimization through efficient numerical simulation 238
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section 238
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators 238
Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model 236
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe 236
A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures 235
A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications 233
Auger transitions and their signatures in III-nitride LEDs: a full-band modeling 233
Self-Consistent Coupled Carrier Transport Full-Wave EM Analysis of Semiconductor Travelling-Wave Devices 230
Physics-based mixer noise simulation 230
A 2D Full-Band Monte Carlo Study of HgCdTe-Based Avalanche Photodiodes 230
GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth 230
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 229
Kinetic and Partial-Differential Equation Modeling of Noise in Schottky Barrier Diodes: a Comparison 228
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 227
Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO 226
Accurate and efficient numerical quasi-TEM modeling of coplanarwaveguides for high-speed electro-optic modulators 225
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 223
Two-dimensional physics-based low-frequency noise modeling of bipolar semiconductor devices in small- and large-signal operation 222
Fast, reduced order full-wave FEM analysis of broadband traveling-wave electrooptical modulators 222
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 221
Ab initio, nonlocal pseudopotential, and full-zone k*p computation of the electronic structure of wurtzite BeO 216
Fast higher-order full-wave FEM analysis of traveling-wave optoelectronic devices 215
Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation 214
Physics-based noise modelling of semiconductor devices in large-signal operation including low-frequency noise conversion effects 212
Auger lifetime in narrow gap semiconductors 210
Ab initio electron-phonon interactions for high-field transport simulation in ZnO 208
Experimental electron mobility in ZnO: a reassessment through Monte Carlo simulation 207
Electron Transport 205
Saga of efficiency degradation at high injection in InGaN light emitting diodes 204
Next-generation long-wavelength infrared detector arrays: competing technologies and modeling challenges 204
FEM-based reduced-order model for steady-state skin-effect analysis in lossy lines 196
Ab initio, semi-empirical pseudopotential, and full-zone k*p electronic structure of CdTe, HgTe and HgCdTe 195
Theory of high field transport and impact ionization in III-nitride semiconductors 193
Quantum Efficiency and Crosstalk in Subwavelength HgCdTe Dual Band Infrared Detectors 192
Physics-based design of III-nitride and ZnO LEDs: from material properties to device optimization 191
Totale 27.781
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Categoria #
all - tutte 111.306
article - articoli 55.018
book - libri 0
conference - conferenze 53.472
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.816
Totale 222.612
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.460 0 0 0 0 0 283 162 161 219 352 163 120
2021/20222.580 184 177 92 233 206 165 76 104 249 167 396 531
2022/20233.359 303 553 77 332 467 434 218 130 337 44 186 278
2023/20241.282 66 132 61 98 72 92 68 75 100 100 252 166
2024/20254.936 107 904 325 522 470 277 292 290 654 259 368 468
2025/20264.115 615 602 751 969 853 325 0 0 0 0 0 0
Totale 38.429