PORTO @ Archivio Istituzionale della Ricerca

BERTAZZI, FRANCESCO
 Distribuzione geografica
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Continente #
NA - Nord America 15.240
EU - Europa 13.708
AS - Asia 4.550
SA - Sud America 534
AF - Africa 84
Continente sconosciuto - Info sul continente non disponibili 12
OC - Oceania 4
Totale 34.132
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Nazione #
US - Stati Uniti d'America 15.097
IT - Italia 3.343
GB - Regno Unito 2.762
DE - Germania 2.351
FR - Francia 2.024
CN - Cina 1.616
SG - Singapore 1.443
UA - Ucraina 749
RU - Federazione Russa 524
BR - Brasile 466
KR - Corea 387
IE - Irlanda 352
TR - Turchia 335
NL - Olanda 323
CH - Svizzera 243
SE - Svezia 219
FI - Finlandia 209
AT - Austria 186
BE - Belgio 151
HK - Hong Kong 132
CA - Canada 120
IN - India 119
MY - Malesia 96
ID - Indonesia 87
JP - Giappone 76
EU - Europa 42
SN - Senegal 32
PK - Pakistan 31
ES - Italia 29
IR - Iran 29
PL - Polonia 27
TW - Taiwan 27
VN - Vietnam 26
BG - Bulgaria 25
IL - Israele 25
JO - Giordania 22
AP - ???statistics.table.value.countryCode.AP??? 19
BD - Bangladesh 19
IQ - Iraq 18
RO - Romania 18
NO - Norvegia 15
SA - Arabia Saudita 15
AR - Argentina 13
AE - Emirati Arabi Uniti 12
CO - Colombia 12
DK - Danimarca 12
EE - Estonia 12
KE - Kenya 12
LT - Lituania 12
EC - Ecuador 11
MX - Messico 11
UZ - Uzbekistan 11
CL - Cile 10
CZ - Repubblica Ceca 9
HR - Croazia 9
PT - Portogallo 9
ZA - Sudafrica 9
BY - Bielorussia 7
GH - Ghana 7
GR - Grecia 7
LU - Lussemburgo 7
DZ - Algeria 6
HU - Ungheria 6
KZ - Kazakistan 6
PE - Perù 6
VE - Venezuela 6
NP - Nepal 5
AU - Australia 4
AZ - Azerbaigian 4
MA - Marocco 4
PY - Paraguay 4
TN - Tunisia 4
AM - Armenia 3
BO - Bolivia 3
CI - Costa d'Avorio 3
NG - Nigeria 3
TH - Thailandia 3
AL - Albania 2
BS - Bahamas 2
CR - Costa Rica 2
DO - Repubblica Dominicana 2
ET - Etiopia 2
KG - Kirghizistan 2
NI - Nicaragua 2
PH - Filippine 2
RS - Serbia 2
SY - Repubblica araba siriana 2
UY - Uruguay 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BB - Barbados 1
BH - Bahrain 1
EG - Egitto 1
GE - Georgia 1
GY - Guiana 1
HN - Honduras 1
IM - Isola di Man 1
JM - Giamaica 1
KH - Cambogia 1
KW - Kuwait 1
LB - Libano 1
Totale 34.125
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Città #
Ashburn 3.362
Southend 2.459
Seattle 1.571
Fairfield 1.136
Chandler 930
Singapore 778
Turin 753
Beijing 561
Woodbridge 551
Princeton 540
Houston 514
Ann Arbor 506
Santa Clara 481
Cambridge 472
Torino 460
Boardman 443
Wilmington 441
Jacksonville 384
Berlin 363
Dublin 309
San Ramon 255
Izmir 246
Bern 211
Council Bluffs 202
Bologna 191
Saint Petersburg 184
Helsinki 151
Brussels 145
Chicago 132
San Donato Milanese 130
Milan 129
Vienna 115
Zhengzhou 115
Seoul 107
Shanghai 97
Zaporozhye 96
Frankfurt 91
Baltimore 90
San Francisco 85
Jakarta 84
Pennsylvania Furnace 83
Amsterdam 82
Fremont 75
Bremen 72
Guangzhou 71
Overberg 70
Shenzhen 69
Hong Kong 63
Rome 61
Munich 60
Hangzhou 56
Mountain View 55
Monopoli 53
Padua 53
Redwood City 52
Toronto 50
Des Moines 49
Paris 49
Valfenera 42
Istanbul 41
San Diego 41
Buffalo 40
San Jose 40
Piscataway 39
Los Angeles 38
São Paulo 37
Hefei 36
Menlo Park 36
Nuremberg 36
Lappeenranta 33
London 33
Washington 33
Columbus 31
Overland Park 30
Herkenbosch 27
Norwalk 27
Wenzhou 26
Lecce 25
Malatya 24
St Petersburg 24
Guiyang 23
New York 23
Sofia 23
Yubileyny 23
Kharkiv 22
Rio de Janeiro 22
Turku 22
Atlanta 21
Frankfurt am Main 21
Melun 19
Hanoi 18
Moscow 18
Putian 18
Taipei 18
Kiev 17
Lake Forest 17
Miami 17
Rivoli 17
Tokyo 17
Nanjing 16
Totale 22.124
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Nome #
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 593
A generalized drift-diffusion model for rectifying Schottky contact simulation 456
Alloy scattering in AlGaN and InGaN: A numerical study 405
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 403
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 402
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 394
Large-signal device simulation in time- and frequency-domain: a comparison 390
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model 383
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 380
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors 376
Role of defects in the thermal droop of InGaN-based light emitting diodes 370
Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis 369
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations 365
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 333
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 328
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 318
A numerical study of carrier impact ionization in AlGaN 314
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 312
Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems 304
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 304
DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS 297
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 297
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 296
A numerical study of low- and high-field carrier transport properties in In0.18Al0.82N lattice-matched to GaN 296
A numerical study of Auger recombination in bulk InGaN 296
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties 285
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 276
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 274
Modeling challenges for high-efficiency visible light-emitting diodes 273
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions - Part I: Large-Signal Sensitivity 272
Innovative techniques for device large-signal noise simulations 271
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 269
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 266
A reduced-order technique for the acceleration of electronic structure calculations 263
Many-valley electron transport in AlGaAs VCSELs 260
Simulation of Quantum Dot Solar Cells Including Carrier Intersubband Dynamics and Transport 260
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 256
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook 254
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 253
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II - Small-Signal and Conversion Matrix Sensitivity 252
Application of physical models to circuit simulations 247
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 247
Full-band Monte Carlo simulation of HgCdTe APDs 246
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 246
Low-frequency noise conversion modeling in RF devices under forced nonlinear operation 243
Auger recombination in bulk InGaN and quantum wells: a numerical simulation study 243
Theory of high field carrier transport and impact ionization in ZnO 243
Numerical analysis of indirect Auger transitions in InGaN 243
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation 241
Accurate simulation of travelling-wave electroabsorption modulators through a novel coupled electromagnetic and carrier-transport model 239
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium 238
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications 236
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 236
Key issues in trap-assisted low-frequency device noise simulation in nonlinear large-signal conditions 234
Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D 234
Full-band Monte Carlo simulation of HgCdTe APDs 232
A novel reduced-order model for full-wave waveguide analysis 231
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section 230
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 227
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators 223
Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model 222
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 222
Microwave device optimization through efficient numerical simulation 221
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells 220
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 220
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study 219
VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator 219
Physics-based mixer noise simulation 218
A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications 218
Kinetic and Partial-Differential Equation Modeling of Noise in Schottky Barrier Diodes: a Comparison 216
A 2D Full-Band Monte Carlo Study of HgCdTe-Based Avalanche Photodiodes 215
A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures 215
Auger transitions and their signatures in III-nitride LEDs: a full-band modeling 215
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe 215
GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth 214
Self-Consistent Coupled Carrier Transport Full-Wave EM Analysis of Semiconductor Travelling-Wave Devices 213
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 213
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 213
Fast, reduced order full-wave FEM analysis of broadband traveling-wave electrooptical modulators 212
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 210
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 210
Accurate and efficient numerical quasi-TEM modeling of coplanarwaveguides for high-speed electro-optic modulators 209
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach 207
Two-dimensional physics-based low-frequency noise modeling of bipolar semiconductor devices in small- and large-signal operation 206
Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO 206
Fast higher-order full-wave FEM analysis of traveling-wave optoelectronic devices 202
Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation 200
Ab initio, nonlocal pseudopotential, and full-zone k*p computation of the electronic structure of wurtzite BeO 198
Auger lifetime in narrow gap semiconductors 198
Physics-based noise modelling of semiconductor devices in large-signal operation including low-frequency noise conversion effects 194
Ab initio electron-phonon interactions for high-field transport simulation in ZnO 192
Experimental electron mobility in ZnO: a reassessment through Monte Carlo simulation 192
Saga of efficiency degradation at high injection in InGaN light emitting diodes 191
FEM-based reduced-order model for steady-state skin-effect analysis in lossy lines 187
Electron Transport 186
Model for carrier capture time through phonon emission in InGaN/GaN quantum wells 183
Theory of high field transport and impact ionization in III-nitride semiconductors 182
Ab initio, semi-empirical pseudopotential, and full-zone k*p electronic structure of CdTe, HgTe and HgCdTe 181
Electron and hole transport in bulk ZnO: A full band Monte Carlo study 180
Next-generation long-wavelength infrared detector arrays: competing technologies and modeling challenges 180
Totale 25.938
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Categoria #
all - tutte 99.022
article - articoli 49.001
book - libri 0
conference - conferenze 47.475
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.546
Totale 198.044
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20212.540 285 277 112 284 122 283 162 161 219 352 163 120
2021/20222.580 184 177 92 233 206 165 76 104 249 167 396 531
2022/20233.359 303 553 77 332 467 434 218 130 337 44 186 278
2023/20241.282 66 132 61 98 72 92 68 75 100 100 252 166
2024/20254.936 107 904 325 522 470 277 292 290 654 259 368 468
2025/2026218 218 0 0 0 0 0 0 0 0 0 0 0
Totale 34.532