PORTO @ Archivio Istituzionale della Ricerca

BERTAZZI, FRANCESCO
 Distribuzione geografica
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Continente #
NA - Nord America 18.281
EU - Europa 15.471
AS - Asia 11.598
SA - Sud America 933
AF - Africa 163
Continente sconosciuto - Info sul continente non disponibili 12
OC - Oceania 10
Totale 46.468
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Nazione #
US - Stati Uniti d'America 18.041
IT - Italia 3.800
SG - Singapore 3.285
GB - Regno Unito 2.810
VN - Vietnam 2.698
CN - Cina 2.460
DE - Germania 2.416
FR - Francia 2.260
RU - Federazione Russa 1.274
UA - Ucraina 760
BR - Brasile 725
KR - Corea 704
HK - Hong Kong 657
NL - Olanda 362
IE - Irlanda 356
IN - India 351
TR - Turchia 348
CH - Svizzera 260
FI - Finlandia 252
SE - Svezia 230
AT - Austria 193
CA - Canada 167
BE - Belgio 156
BD - Bangladesh 149
JP - Giappone 131
ID - Indonesia 113
MY - Malesia 105
PH - Filippine 100
TW - Taiwan 83
IQ - Iraq 72
TH - Thailandia 65
AR - Argentina 58
PK - Pakistan 55
ES - Italia 48
PL - Polonia 44
EU - Europa 42
MX - Messico 37
SN - Senegal 35
EC - Ecuador 31
IR - Iran 31
JO - Giordania 31
CO - Colombia 30
BG - Bulgaria 28
CL - Cile 28
IL - Israele 27
ZA - Sudafrica 24
VE - Venezuela 23
KE - Kenya 21
MA - Marocco 21
UZ - Uzbekistan 20
AP - ???statistics.table.value.countryCode.AP??? 19
RO - Romania 19
SA - Arabia Saudita 19
AE - Emirati Arabi Uniti 17
PY - Paraguay 16
NO - Norvegia 15
NP - Nepal 14
LT - Lituania 13
DK - Danimarca 12
DZ - Algeria 12
EE - Estonia 12
EG - Egitto 12
CZ - Repubblica Ceca 11
HR - Croazia 11
PT - Portogallo 11
AU - Australia 10
AZ - Azerbaigian 10
KZ - Kazakistan 10
PE - Perù 9
TN - Tunisia 9
BY - Bielorussia 8
GR - Grecia 8
HU - Ungheria 8
JM - Giamaica 8
AL - Albania 7
GE - Georgia 7
GH - Ghana 7
LU - Lussemburgo 7
SY - Repubblica araba siriana 7
AM - Armenia 6
BO - Bolivia 6
DO - Repubblica Dominicana 6
KG - Kirghizistan 6
LB - Libano 6
OM - Oman 5
RS - Serbia 5
UY - Uruguay 5
BB - Barbados 4
CI - Costa d'Avorio 4
KW - Kuwait 4
NG - Nigeria 4
SI - Slovenia 4
BH - Bahrain 3
BS - Bahamas 3
CR - Costa Rica 3
HN - Honduras 3
MU - Mauritius 3
NI - Nicaragua 3
PS - Palestinian Territory 3
CG - Congo 2
Totale 46.433
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Città #
Ashburn 3.856
Southend 2.459
Singapore 1.864
Seattle 1.575
Fairfield 1.136
San Jose 1.003
Chandler 930
Turin 830
Beijing 775
Ho Chi Minh City 709
Hanoi 651
Woodbridge 551
Princeton 540
Santa Clara 522
Houston 518
Hong Kong 517
Ann Arbor 506
Cambridge 473
Torino 460
Boardman 448
Wilmington 441
Jacksonville 384
Berlin 365
Seoul 343
Council Bluffs 311
Dublin 311
Los Angeles 302
Milan 255
San Ramon 255
Dallas 253
Izmir 248
Bern 211
Bologna 197
Saint Petersburg 184
Lauterbourg 183
Helsinki 163
Brussels 146
Chicago 137
San Donato Milanese 130
Da Nang 128
Hefei 124
Buffalo 123
Zhengzhou 120
Vienna 119
Rome 117
North Bergen 114
Shanghai 107
Zaporozhye 96
Haiphong 95
Baltimore 91
Frankfurt 91
Amsterdam 89
New York 87
San Francisco 87
Guangzhou 85
Jakarta 85
Pennsylvania Furnace 83
Moscow 81
Fremont 75
Bremen 72
Shenzhen 71
Overberg 70
São Paulo 62
Frankfurt am Main 61
Hangzhou 60
Munich 60
Lappeenranta 56
Paris 56
Toronto 56
Mountain View 55
Padua 54
Monopoli 53
Redwood City 52
Des Moines 51
Piscataway 46
Tokyo 46
Istanbul 44
San Diego 43
Valfenera 42
Figino 41
Nuremberg 41
Hải Dương 40
Columbus 39
London 39
Menlo Park 36
The Dalles 34
Washington 33
Groningen 31
Atlanta 30
Bangkok 30
Overland Park 30
Turku 29
Biên Hòa 28
Herkenbosch 27
Nha Trang 27
Norwalk 27
Rio de Janeiro 27
Wenzhou 27
Lecce 26
Orem 26
Totale 28.917
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Nome #
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 700
A generalized drift-diffusion model for rectifying Schottky contact simulation 519
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 492
Alloy scattering in AlGaN and InGaN: A numerical study 484
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations 472
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 467
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 466
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 462
Large-signal device simulation in time- and frequency-domain: a comparison 457
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model 442
Role of defects in the thermal droop of InGaN-based light emitting diodes 437
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors 418
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 412
Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis 408
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 386
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 385
A numerical study of Auger recombination in bulk InGaN 383
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 382
Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems 373
Modeling challenges for high-efficiency visible light-emitting diodes 369
DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS 365
A numerical study of carrier impact ionization in AlGaN 354
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 354
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions - Part I: Large-Signal Sensitivity 352
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach 350
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 349
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 344
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 343
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties 343
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 342
A numerical study of low- and high-field carrier transport properties in In0.18Al0.82N lattice-matched to GaN 340
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 331
VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator 327
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 325
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II - Small-Signal and Conversion Matrix Sensitivity 324
Many-valley electron transport in AlGaAs VCSELs 323
A reduced-order technique for the acceleration of electronic structure calculations 323
Simulation of Quantum Dot Solar Cells Including Carrier Intersubband Dynamics and Transport 322
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 321
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation 319
Numerical analysis of indirect Auger transitions in InGaN 315
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 313
Innovative techniques for device large-signal noise simulations 312
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 311
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 301
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study 301
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications 300
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium 300
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 297
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 296
Theory of high field carrier transport and impact ionization in ZnO 296
Auger recombination in bulk InGaN and quantum wells: a numerical simulation study 295
Full-band Monte Carlo simulation of HgCdTe APDs 291
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook 287
Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D 287
Microwave device optimization through efficient numerical simulation 285
Low-frequency noise conversion modeling in RF devices under forced nonlinear operation 285
A novel reduced-order model for full-wave waveguide analysis 281
Application of physical models to circuit simulations 279
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 279
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells 276
Self-Consistent Coupled Carrier Transport Full-Wave EM Analysis of Semiconductor Travelling-Wave Devices 274
Key issues in trap-assisted low-frequency device noise simulation in nonlinear large-signal conditions 273
Full-band Monte Carlo simulation of HgCdTe APDs 273
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 273
Accurate simulation of travelling-wave electroabsorption modulators through a novel coupled electromagnetic and carrier-transport model 270
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section 266
A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures 266
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 266
Physics-based mixer noise simulation 265
Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model 264
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators 263
Auger transitions and their signatures in III-nitride LEDs: a full-band modeling 262
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe 262
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 260
TCAD-Assisted Progress on the Cisco Platform Toward Low-Bias 200 Gbit/s vertical-pin Ge- on-Si Waveguide Photodetectors 256
Modeling Infrared Superlattice Photodetectors: From Nonequilibrium Green’s Functions to Quantum-Corrected Drift Diffusion 256
Nonequilibrium Green’s Function Modeling of type-II Superlattice Detectors and its Connection to Semiclassical Approaches 254
Physics-based noise modelling of semiconductor devices in large-signal operation including low-frequency noise conversion effects 253
A 2D Full-Band Monte Carlo Study of HgCdTe-Based Avalanche Photodiodes 253
Ab initio, nonlocal pseudopotential, and full-zone k*p computation of the electronic structure of wurtzite BeO 252
Physics-based design of III-nitride and ZnO LEDs: from material properties to device optimization 252
A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications 252
Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO 252
GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth 249
Fast, reduced order full-wave FEM analysis of broadband traveling-wave electrooptical modulators 248
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 248
Accurate and efficient numerical quasi-TEM modeling of coplanarwaveguides for high-speed electro-optic modulators 247
Two-dimensional physics-based low-frequency noise modeling of bipolar semiconductor devices in small- and large-signal operation 246
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 246
Kinetic and Partial-Differential Equation Modeling of Noise in Schottky Barrier Diodes: a Comparison 246
Electron Transport 245
Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation 244
Next-generation long-wavelength infrared detector arrays: competing technologies and modeling challenges 244
Analysis and Design of Plasmonic-Organic Hybrid Electro-Optic Modulators Based on Directional Couplers 244
Quantum Efficiency and Crosstalk in Subwavelength HgCdTe Dual Band Infrared Detectors 243
Theory of high field transport and impact ionization in III-nitride semiconductors 242
Bridging scales in multiphysics VCSEL modeling 239
Fast higher-order full-wave FEM analysis of traveling-wave optoelectronic devices 234
Experimental electron mobility in ZnO: a reassessment through Monte Carlo simulation 232
Totale 31.766
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Categoria #
all - tutte 127.378
article - articoli 62.958
book - libri 0
conference - conferenze 61.260
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 3.160
Totale 254.756
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021120 0 0 0 0 0 0 0 0 0 0 0 120
2021/20222.580 184 177 92 233 206 165 76 104 249 167 396 531
2022/20233.359 303 553 77 332 467 434 218 130 337 44 186 278
2023/20241.282 66 132 61 98 72 92 68 75 100 100 252 166
2024/20254.936 107 904 325 522 470 277 292 290 654 259 368 468
2025/202612.572 615 602 751 969 853 815 2.041 911 2.872 1.163 297 683
Totale 46.886