We propose a rigorous finite-element-method (FEM) model for traveling-wave structures on doped semiconductor substrates based on a full-wave electromagnetic model coupled to a drift-diffusion description of carrier transport. The coupled model allows to describe field-carrier interactions in distributed structures, where strong low-frequency dispersion due to metal and semiconductor losses and multimodal behavior are observed. Slow-wave propagation, which is significant for photonic devices wherein synchronous optical-RF coupling is required, is also self-consistently accounted for. Numerical examples for some practical microwave structures exploited in RF and optoelectronic applications are included to illustrate the capabilities and effectiveness of the proposed numerical technique.
|Titolo:||Self-Consistent Coupled Carrier Transport Full-Wave EM Analysis of Semiconductor Travelling-Wave Devices|
|Data di pubblicazione:||2006|
|Digital Object Identifier (DOI):||10.1109/TMTT.2006.871946|
|Appare nelle tipologie:||1.1 Articolo in rivista|