Two alternative approximations of the electronic structure of CdTe and HgTe are proposed, both suited to the needs of accuracy and numerical efficiency of full-band carrier transport simulation: a local empirical pseudopotential (EPM) parametrization including relativistic corrections, and an original full- Brillouin-zone (FBZ) k.p model using two expansion points (C and W). The EPM and k.p band structures closely match the available experimental and ab initio information, complemented with the results of new density functional theory (DFT)-local density approximation (LDA) calculations, for the conduction and valence bands relevant in transport phenomena. The EPM description of the binary compounds, featuring transferable Te pseudopotentials, is the basis for a computation of the electronic structure of the ternary alloy HgCdTe in the framework of disorder-corrected virtual crystal approximation. The composition dependence of energy gaps, effective masses, and high-frequency dielectric constants are discussed and compared with available experimental data, and the novel FBZ approach is applied to the case of x = 0.7.
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe / PENNA M.; MARNETTO A.; BERTAZZI F.; BELLOTTI E.; GOANO M.. - In: JOURNAL OF ELECTRONIC MATERIALS. - ISSN 0361-5235. - 38(2009), pp. 1717-1725. [10.1007/s11664-009-0798-z]
|Titolo:||Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe|
|Data di pubblicazione:||2009|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1007/s11664-009-0798-z|
|Appare nelle tipologie:||1.1 Articolo in rivista|