PORTO @ Archivio Istituzionale della Ricerca

DONATI GUERRIERI, SIMONA
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 15.290
EU - Europa 13.882
AS - Asia 2.696
AF - Africa 88
SA - Sud America 78
OC - Oceania 4
Continente sconosciuto - Info sul continente non disponibili 3
Totale 32.041
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 15.228
IT - Italia 2.960
GB - Regno Unito 2.762
DE - Germania 2.563
FR - Francia 2.219
CN - Cina 913
UA - Ucraina 911
SG - Singapore 509
NL - Olanda 425
RU - Federazione Russa 412
TR - Turchia 406
KR - Corea 356
SE - Svezia 349
IE - Irlanda 314
CH - Svizzera 291
FI - Finlandia 191
BE - Belgio 136
JP - Giappone 86
JO - Giordania 82
AT - Austria 81
IN - India 74
AP - ???statistics.table.value.countryCode.AP??? 67
ID - Indonesia 54
CA - Canada 53
TW - Taiwan 45
RO - Romania 43
SN - Senegal 43
CO - Colombia 40
HK - Hong Kong 34
ES - Italia 29
EU - Europa 27
BG - Bulgaria 25
PK - Pakistan 24
IR - Iran 21
NO - Norvegia 20
IL - Israele 19
CZ - Repubblica Ceca 17
AE - Emirati Arabi Uniti 16
VN - Vietnam 16
BR - Brasile 15
ZA - Sudafrica 14
CL - Cile 12
MY - Malesia 12
PT - Portogallo 11
MX - Messico 9
HU - Ungheria 8
EC - Ecuador 7
EG - Egitto 7
NG - Nigeria 7
HR - Croazia 6
BJ - Benin 5
GR - Grecia 5
LU - Lussemburgo 5
SD - Sudan 5
AR - Argentina 4
UZ - Uzbekistan 4
DZ - Algeria 3
LV - Lettonia 3
PH - Filippine 3
PL - Polonia 3
TH - Thailandia 3
AU - Australia 2
BD - Bangladesh 2
EE - Estonia 2
IQ - Iraq 2
KZ - Kazakistan 2
NZ - Nuova Zelanda 2
RS - Serbia 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BT - Bhutan 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
ET - Etiopia 1
LT - Lituania 1
MD - Moldavia 1
SC - Seychelles 1
TJ - Tagikistan 1
TN - Tunisia 1
Totale 32.041
Salva come PNG Salva come JPEG
Città #
Ashburn 4.034
Southend 2.470
Seattle 2.121
Fairfield 1.081
Chandler 624
Turin 523
Princeton 522
Woodbridge 522
Ann Arbor 480
San Ramon 474
Jacksonville 464
Houston 430
Wilmington 405
Cambridge 370
Bologna 355
Singapore 353
Berlin 326
Izmir 305
Torino 305
Dublin 296
Boardman 247
Bern 240
Beijing 225
San Donato Milanese 172
Chicago 169
Helsinki 169
Frankfurt 166
San Francisco 151
San Jose 140
Buffalo 139
Brussels 130
Baltimore 125
Pennsylvania Furnace 123
Zaporozhye 121
Overberg 118
Des Moines 112
Santa Clara 110
Saint Petersburg 106
Shanghai 106
Monopoli 98
Zhengzhou 93
Padua 90
Milan 81
Amsterdam 80
Rome 80
Vienna 78
Council Bluffs 64
San Diego 62
Malatya 56
Seoul 55
Jakarta 52
Mountain View 47
Norwalk 47
Redwood City 47
Hangzhou 44
Menlo Park 44
Guangzhou 43
Shenzhen 43
Kriens 39
Fremont 38
Istanbul 35
Las Vegas 35
Gilroy 33
Valfenera 33
Modena 31
Toronto 31
Andover 30
Paris 30
London 29
Moscow 29
Atlanta 27
New York 27
Melun 26
Nanjing 26
Austin 25
Kansas City 25
Piscataway 23
Yubileyny 23
Galati 22
Dallas 21
Sofia 21
Fuzhou 20
Lappeenranta 19
San Antonio 19
Falls Church 18
Islamabad 18
Podenzano 18
Putian 18
Charleston 17
Indiana 17
Lamézia 17
Phoenix 17
Stavanger 17
Verona 17
West Chester 17
Ningbo 16
Washington 16
Clearwater 14
Los Angeles 14
Muizenberg 14
Totale 21.515
Salva come PNG Salva come JPEG
Nome #
A 22W 65% efficiency GaN Doherty power amplifier at 3.5 GHz for WiMAX applications 559
A K-band GaAs MMIC Doherty power amplifier for point-to-point microwave backhaul applications 471
Dispositivi e tecnologie elettroniche 453
K-Band GaAs MMIC Doherty Power Amplifier for Microwave Radio With Optimized Driver 447
3.5 GHz WiMAX GaN Doherty Power Amplifier with 2nd harmonic tuning 438
When self-consistency makes a difference 436
A generalized drift-diffusion model for rectifying Schottky contact simulation 434
Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models 420
Modeling and simulation of noise in transistors under large-signal condition 415
Behavioral modeling of GaN-based power amplifiers: impact of electrothermal feedback on the model accuracy and identification 406
Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications 393
A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation 376
A frequency-domain approach to the analysis of stability and bifurcations in nonlinear systems described by differential-algebraic equations 370
Large-signal device simulation in time- and frequency-domain: a comparison 369
Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis 359
Application of Floquet Theory to the Large Signal Stability Analysis of Microwave Amplifiers 346
Noise source modeling for cyclostationary noise analysis in large-signal device operation 342
Harmonic Balance Simulation and Analysis 334
Cyclostationary noise modeling of radio frequency devices 317
Concurrent Dual-Band SiGe HBT Power Amplifier for Wireless Applications 311
Physics-based modeling of FinFET RF variability 309
A Green's function approach to the analysis of non volatile memory device variability as a function of individual trap position 288
Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems 287
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part I: Model derivation 282
Compact modelling of cyclostationary noise in semiconductor devices: a critical discussion 278
Large-signal stability of symmetric multi-branch power amplifiers exploiting Floquet analysis 276
Multi-gate FinFET Mixer Variability assessment through physics-based simulation 272
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part II: Discussion 270
Innovative techniques for device large-signal noise simulations 263
Concurrent Efficient Evaluation of Small-Change Parameters and Green's Functions for TCAD Device Noise and Variability Analysis 263
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions - Part I: Large-Signal Sensitivity 257
Sensitivity-based optimization and statistical analysis of microwave semiconductor devices through multidimensional physical simulation (invited article) 251
A comprehensive class A to B power and load-pull characterization of GaN HEMTs on SiC and sapphire substrates 248
Green’s function based simulation of trap-induced device variability 244
Base-band Predistortion Linearization scheme of High Efficiency Power Amplifiers for wireless applications 239
Low-frequency noise conversion modeling in RF devices under forced nonlinear operation 237
A surface-potential-based MOSFET compact model accounting for random doping fluctuations 237
Predistorsione in Banda Base per la linearizzazione di un amplificatore Doherty per applicazioni wireless con efficienza media del 50%. 237
Design and baseband predistortion of a 43.5 dBm GaN Doherty amplifier for 3.5 GHz WiMAX applications 236
Self-consistent fully dynamic electro-thermal simulation of power HBTs 235
Application of physical models to circuit simulations 234
Self-Consistent Electrothermal Modeling of Class A, AB, and B Power GaN HEMTs Under Modulated RF Excitation 233
Modeling elettrotermico auto-consistente di dispositivi HEMT su GaN per applicazioni di potenza 232
Key issues in trap-assisted low-frequency device noise simulation in nonlinear large-signal conditions 229
Advanced Neural Network Techniques for GaN-HEMT Dynamic Behavior Characterization 229
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II - Small-Signal and Conversion Matrix Sensitivity 227
Author's reply to "Comments on "Noise source modeling for cyclostationary noise analysis in large-signal device operation"" 226
A new dynamic self-consistent electro-thermal model of power HBTs and a novelinterpretation of thermal collapse loci in multi-finger devices 226
Physics-based analysis of FinFET RF variability including parasitics 225
7 GHz GaN MMIC power amplifier for microwave radio links with 45% drain efficiency in a wide power range 219
Physics-based nonlinear noise modelling 218
Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high-power applications 217
An efficient numerical approach to the physics-based sensitivity analysis of bipolar semiconductor devices 217
Dispositivi e circuiti elettronici 214
Floquet-Based Stability Analysis of Power Amplifiers Including Distributed Elements 214
Kinetic and Partial-Differential Equation Modeling of Noise in Schottky Barrier Diodes: a Comparison 213
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators 212
GaN HEMT Technology Development Assessment through Nonlinear Characterization 211
A New Analytical Model for High Frequency MOSFET Noise 211
Physics-based mixer noise simulation 206
Fabrication and non-linear load-pull characterization of GaN HEMT on SiC for high power applications 206
Variability of FinFET AC parameters: A physics-based insight 205
Nonlinear characterization of advanced GaN HEMT devices 200
Microwave device optimization through efficient numerical simulation 200
A new approach to the physics-based noise analysis of semiconductor devices operating in large signal, (quasi) periodic regime 200
Assessment of GaN-based power amplifiers through self-consistent electrothermal modelling and nonlinear characterization. 200
Two-dimensional physics-based low-frequency noise modeling of bipolar semiconductor devices in small- and large-signal operation 198
Small and large signal trap-assisted GR noise modeling in semiconductor devices 198
Self-Consistent electro-thermal model for GaN HEMTs devices evaluation 198
A Comprehensive GaN HEMT Characterization for Power Amplifier Design 196
Self-Consistent Coupled Carrier Transport Full-Wave EM Analysis of Semiconductor Travelling-Wave Devices 195
CAD-oriented, physics-based large- and small-signal noise analysis of bipolar semiconductor devices 194
Optimum design of a new predistortion scheme for high linearity K-band MMIC power amplifiers 191
A New, Closed-Form Compact Model for the Cyclostationary Noise and LS Conversion Behaviour of RF Junction Diodes 191
Dynamic, self consistent electro-thermal simulation of power microwave devices including the effect of surface metallizations 190
Design of MultiBand SiGe HBT Power Amplifier: from device characterization to system level evaluation 187
Physics-based modeling of FinFET RF variability under Shorted- and Independent-Gates bias 187
Physics-based noise modelling of semiconductor devices in large-signal operation including low-frequency noise conversion effects 186
On linearisation of microwave-transmitter solid-state power amplifiers 186
Simulazione e progetto termico di transistori e MMIC di potenza su semiconduttori composti per applicazioni spaziali 186
Large-signal variability of microwave power amplifiers through efficient device sensitivity-based physical modeling 184
Physics-based RF noise modeling of submicron MOSFETs 184
Caratterizzazione non-lineare di HEMT su GaN per applicazioni di potenza 182
Nonlinear models with nonlinear memory 182
Impact of Substrate Resistance on Drain Current Noise in MOSFETs 181
Simulation of cyclostationary noise in semiconductor devices 179
RF sensitivity analysis of independent-gates FinFETs for analog applications exploiting the back-gating effect 179
Nonlinear noise in devices: sources, frequency conversion mechanisms and statistical noise process characterization 177
Rigorous, HB-based nonlinear stability analysis of multi-device power amplifier 175
Considerations on the impact of power device dynamic electrothermal phenomena on power amplifier non-linearities 173
Analisi di rumore ciclostazionario nei dispositivi operanti in regime di ampio segnale 173
Optimum design of a new predistortion scheme for high linearity K-band MMIC power amplifiers 173
Simulazione FEM di dispositivi a semiconduttore in regime periodico di ampio segnale nel dominio del tempo e della frequenza 172
A new predistortion scheme with efficient IMP optimization for high linearity MMIC power amplifiers 171
A distributed analytical model for pn junction small- and large-signal noise analysis in low injection conditions 170
Simulazione e progetto termico di transistori eMMIC di potenza su semiconduttori composti per applicazioni spaziali 169
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators 169
Thermal simulation and optimization of AlGaN/GaN HEMTs 164
A novel approach to yield estimate and IMP performance optimization of microwave devices 161
A novel approach to microwave circuit large-signal variability analysis through efficient device sensitivity-based physical modeling 161
Totale 24.991
Salva come PNG Salva come JPEG
Categoria #
all - tutte 89.512
article - articoli 26.897
book - libri 1.597
conference - conferenze 59.823
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.195
Totale 179.024
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.179 0 0 0 0 406 326 345 425 393 161 65 58
2020/20212.309 287 336 107 288 83 278 114 195 177 178 154 112
2021/20222.033 89 155 8 92 181 177 120 64 113 159 400 475
2022/20232.896 268 433 76 181 258 377 271 160 348 24 184 316
2023/2024891 51 81 71 63 91 79 48 42 26 50 165 124
2024/20251.433 49 606 177 402 199 0 0 0 0 0 0 0
Totale 32.384