PORTO @ Archivio Istituzionale della Ricerca

DONATI GUERRIERI, SIMONA
 Distribuzione geografica
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Continente #
NA - Nord America 16.021
EU - Europa 14.276
AS - Asia 4.851
SA - Sud America 601
AF - Africa 128
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 5
Totale 35.887
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Nazione #
US - Stati Uniti d'America 15.927
IT - Italia 3.023
GB - Regno Unito 2.819
DE - Germania 2.631
FR - Francia 2.241
CN - Cina 1.588
SG - Singapore 1.512
UA - Ucraina 918
KR - Corea 535
BR - Brasile 479
NL - Olanda 436
RU - Federazione Russa 428
TR - Turchia 422
SE - Svezia 350
IE - Irlanda 346
CH - Svizzera 291
FI - Finlandia 207
AT - Austria 159
HK - Hong Kong 147
BE - Belgio 136
JP - Giappone 96
IN - India 93
VN - Vietnam 91
JO - Giordania 84
AP - ???statistics.table.value.countryCode.AP??? 67
CA - Canada 60
ID - Indonesia 56
CO - Colombia 45
TW - Taiwan 45
SN - Senegal 44
RO - Romania 43
PK - Pakistan 34
ES - Italia 32
AR - Argentina 27
BG - Bulgaria 27
EU - Europa 27
ZA - Sudafrica 25
MX - Messico 24
IR - Iran 21
NO - Norvegia 21
IL - Israele 20
AE - Emirati Arabi Uniti 19
CZ - Repubblica Ceca 17
CL - Cile 14
IQ - Iraq 14
EC - Ecuador 13
MY - Malesia 12
PY - Paraguay 12
BD - Bangladesh 11
EG - Egitto 11
PT - Portogallo 11
UZ - Uzbekistan 11
HU - Ungheria 9
MA - Marocco 9
PL - Polonia 9
DZ - Algeria 8
NG - Nigeria 7
HR - Croazia 6
BJ - Benin 5
GR - Grecia 5
KE - Kenya 5
LU - Lussemburgo 5
SD - Sudan 5
LT - Lituania 4
SA - Arabia Saudita 4
UY - Uruguay 4
VE - Venezuela 4
AM - Armenia 3
ET - Etiopia 3
GT - Guatemala 3
LV - Lettonia 3
PH - Filippine 3
RS - Serbia 3
TH - Thailandia 3
AL - Albania 2
AU - Australia 2
AZ - Azerbaigian 2
EE - Estonia 2
GE - Georgia 2
KZ - Kazakistan 2
LB - Libano 2
NI - Nicaragua 2
NP - Nepal 2
NZ - Nuova Zelanda 2
OM - Oman 2
PE - Perù 2
SK - Slovacchia (Repubblica Slovacca) 2
TN - Tunisia 2
XK - ???statistics.table.value.countryCode.XK??? 2
AD - Andorra 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BH - Bahrain 1
BO - Bolivia 1
BS - Bahamas 1
BT - Bhutan 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
DK - Danimarca 1
DO - Repubblica Dominicana 1
Totale 35.873
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Città #
Ashburn 4.086
Southend 2.470
Seattle 2.127
Fairfield 1.081
Singapore 702
Chandler 624
Turin 553
Princeton 522
Woodbridge 522
Ann Arbor 480
San Ramon 474
Jacksonville 466
Houston 431
Wilmington 405
Cambridge 372
Bologna 358
Dublin 327
Berlin 326
Beijing 323
Izmir 307
Torino 305
Boardman 262
Bern 240
Santa Clara 222
Buffalo 187
Dallas 174
Chicago 173
San Donato Milanese 172
Helsinki 170
Frankfurt 166
San Francisco 158
Seoul 146
San Jose 141
Brussels 130
Baltimore 125
Pennsylvania Furnace 123
Shanghai 122
Zaporozhye 121
Overberg 118
Des Moines 112
Saint Petersburg 106
Hong Kong 103
Council Bluffs 98
Monopoli 98
Zhengzhou 97
Hefei 92
Padua 90
Vienna 86
Amsterdam 84
Milan 83
Rome 83
San Diego 63
London 62
Guangzhou 57
Malatya 56
Jakarta 52
Fremont 51
Los Angeles 51
Mountain View 47
Norwalk 47
Redwood City 47
Shenzhen 47
Hangzhou 46
Menlo Park 44
Kriens 39
Istanbul 38
New York 38
Las Vegas 36
Moscow 35
Modena 34
Gilroy 33
Paris 33
Valfenera 33
Nuremberg 32
Toronto 32
Andover 30
Atlanta 30
Nanjing 27
Ho Chi Minh City 26
Lappeenranta 26
Melun 26
Munich 26
Austin 25
Kansas City 25
São Paulo 25
Piscataway 23
Sofia 23
Yubileyny 23
Fuzhou 22
Galati 22
Phoenix 21
Hanoi 20
San Antonio 20
Tokyo 20
Islamabad 19
Washington 19
Falls Church 18
Podenzano 18
Putian 18
Belo Horizonte 17
Totale 22.965
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Nome #
A 22W 65% efficiency GaN Doherty power amplifier at 3.5 GHz for WiMAX applications 600
A K-band GaAs MMIC Doherty power amplifier for point-to-point microwave backhaul applications 524
3.5 GHz WiMAX GaN Doherty Power Amplifier with 2nd harmonic tuning 497
K-Band GaAs MMIC Doherty Power Amplifier for Microwave Radio With Optimized Driver 496
Dispositivi e tecnologie elettroniche 469
A generalized drift-diffusion model for rectifying Schottky contact simulation 466
When self-consistency makes a difference 465
Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models 452
Modeling and simulation of noise in transistors under large-signal condition 450
Behavioral modeling of GaN-based power amplifiers: impact of electrothermal feedback on the model accuracy and identification 442
Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications 413
A frequency-domain approach to the analysis of stability and bifurcations in nonlinear systems described by differential-algebraic equations 407
A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation 401
Large-signal device simulation in time- and frequency-domain: a comparison 396
Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis 376
Noise source modeling for cyclostationary noise analysis in large-signal device operation 363
Application of Floquet Theory to the Large Signal Stability Analysis of Microwave Amplifiers 361
Cyclostationary noise modeling of radio frequency devices 351
Harmonic Balance Simulation and Analysis 351
Concurrent Dual-Band SiGe HBT Power Amplifier for Wireless Applications 334
Physics-based modeling of FinFET RF variability 330
Multi-gate FinFET Mixer Variability assessment through physics-based simulation 309
Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems 307
A Green's function approach to the analysis of non volatile memory device variability as a function of individual trap position 306
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part I: Model derivation 304
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part II: Discussion 304
Large-signal stability of symmetric multi-branch power amplifiers exploiting Floquet analysis 299
Compact modelling of cyclostationary noise in semiconductor devices: a critical discussion 294
Concurrent Efficient Evaluation of Small-Change Parameters and Green's Functions for TCAD Device Noise and Variability Analysis 292
Innovative techniques for device large-signal noise simulations 281
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions - Part I: Large-Signal Sensitivity 279
Sensitivity-based optimization and statistical analysis of microwave semiconductor devices through multidimensional physical simulation (invited article) 277
A comprehensive class A to B power and load-pull characterization of GaN HEMTs on SiC and sapphire substrates 274
Self-consistent fully dynamic electro-thermal simulation of power HBTs 269
Green’s function based simulation of trap-induced device variability 268
Modeling elettrotermico auto-consistente di dispositivi HEMT su GaN per applicazioni di potenza 266
Design and baseband predistortion of a 43.5 dBm GaN Doherty amplifier for 3.5 GHz WiMAX applications 264
Predistorsione in Banda Base per la linearizzazione di un amplificatore Doherty per applicazioni wireless con efficienza media del 50%. 264
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II - Small-Signal and Conversion Matrix Sensitivity 262
Self-Consistent Electrothermal Modeling of Class A, AB, and B Power GaN HEMTs Under Modulated RF Excitation 256
A surface-potential-based MOSFET compact model accounting for random doping fluctuations 255
Application of physical models to circuit simulations 252
7 GHz GaN MMIC power amplifier for microwave radio links with 45% drain efficiency in a wide power range 252
Base-band Predistortion Linearization scheme of High Efficiency Power Amplifiers for wireless applications 251
Low-frequency noise conversion modeling in RF devices under forced nonlinear operation 248
Floquet-Based Stability Analysis of Power Amplifiers Including Distributed Elements 245
Nonlinear characterization of advanced GaN HEMT devices 243
Advanced Neural Network Techniques for GaN-HEMT Dynamic Behavior Characterization 243
Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high-power applications 243
Key issues in trap-assisted low-frequency device noise simulation in nonlinear large-signal conditions 241
Author's reply to "Comments on "Noise source modeling for cyclostationary noise analysis in large-signal device operation"" 239
Physics-based nonlinear noise modelling 238
A new dynamic self-consistent electro-thermal model of power HBTs and a novelinterpretation of thermal collapse loci in multi-finger devices 238
Optimum design of a new predistortion scheme for high linearity K-band MMIC power amplifiers 235
Physics-based analysis of FinFET RF variability including parasitics 232
GaN HEMT Technology Development Assessment through Nonlinear Characterization 231
An efficient numerical approach to the physics-based sensitivity analysis of bipolar semiconductor devices 230
Dynamic, self consistent electro-thermal simulation of power microwave devices including the effect of surface metallizations 229
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators 229
Microwave device optimization through efficient numerical simulation 228
Dispositivi e circuiti elettronici 226
Physics-based mixer noise simulation 224
Kinetic and Partial-Differential Equation Modeling of Noise in Schottky Barrier Diodes: a Comparison 223
A Comprehensive GaN HEMT Characterization for Power Amplifier Design 222
A New Analytical Model for High Frequency MOSFET Noise 222
Self-Consistent Coupled Carrier Transport Full-Wave EM Analysis of Semiconductor Travelling-Wave Devices 221
Fabrication and non-linear load-pull characterization of GaN HEMT on SiC for high power applications 221
Two-dimensional physics-based low-frequency noise modeling of bipolar semiconductor devices in small- and large-signal operation 217
Variability of FinFET AC parameters: A physics-based insight 217
Small and large signal trap-assisted GR noise modeling in semiconductor devices 215
Assessment of GaN-based power amplifiers through self-consistent electrothermal modelling and nonlinear characterization. 213
Self-Consistent electro-thermal model for GaN HEMTs devices evaluation 213
Caratterizzazione non-lineare di HEMT su GaN per applicazioni di potenza 212
A new approach to the physics-based noise analysis of semiconductor devices operating in large signal, (quasi) periodic regime 208
Simulazione e progetto termico di transistori eMMIC di potenza su semiconduttori composti per applicazioni spaziali 205
Simulazione e progetto termico di transistori e MMIC di potenza su semiconduttori composti per applicazioni spaziali 205
A New, Closed-Form Compact Model for the Cyclostationary Noise and LS Conversion Behaviour of RF Junction Diodes 204
CAD-oriented, physics-based large- and small-signal noise analysis of bipolar semiconductor devices 203
Impact of Substrate Resistance on Drain Current Noise in MOSFETs 202
On linearisation of microwave-transmitter solid-state power amplifiers 202
Large-signal variability of microwave power amplifiers through efficient device sensitivity-based physical modeling 202
Physics-based noise modelling of semiconductor devices in large-signal operation including low-frequency noise conversion effects 201
Design of MultiBand SiGe HBT Power Amplifier: from device characterization to system level evaluation 200
Physics-based modeling of FinFET RF variability under Shorted- and Independent-Gates bias 198
Rigorous, HB-based nonlinear stability analysis of multi-device power amplifier 195
Physics-based RF noise modeling of submicron MOSFETs 194
Nonlinear models with nonlinear memory 192
RF sensitivity analysis of independent-gates FinFETs for analog applications exploiting the back-gating effect 191
Nonlinear noise in devices: sources, frequency conversion mechanisms and statistical noise process characterization 190
A new predistortion scheme with efficient IMP optimization for high linearity MMIC power amplifiers 186
Simulation of cyclostationary noise in semiconductor devices 186
Thermal modeling of RF FinFET PAs through temperature-dependent X-parameters extracted from physics-based simulations 185
Considerations on the impact of power device dynamic electrothermal phenomena on power amplifier non-linearities 184
Optimum design of a new predistortion scheme for high linearity K-band MMIC power amplifiers 183
A distributed analytical model for pn junction small- and large-signal noise analysis in low injection conditions 182
Thermal simulation and optimization of AlGaN/GaN HEMTs 181
Simulazione FEM di dispositivi a semiconduttore in regime periodico di ampio segnale nel dominio del tempo e della frequenza 180
Analisi di rumore ciclostazionario nei dispositivi operanti in regime di ampio segnale 179
An efficient physics-based CAD approach to evaluate the sensitivity of GaAs devices with respect to process parameters 176
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators 176
Totale 27.157
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Categoria #
all - tutte 105.429
article - articoli 31.582
book - libri 1.786
conference - conferenze 70.702
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.359
Totale 210.858
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.686 0 0 107 288 83 278 114 195 177 178 154 112
2021/20222.033 89 155 8 92 181 177 120 64 113 159 400 475
2022/20232.896 268 433 76 181 258 377 271 160 348 24 184 316
2023/2024891 51 81 71 63 91 79 48 42 26 50 165 124
2024/20253.738 49 606 177 402 283 153 176 303 591 244 340 414
2025/20261.563 403 557 603 0 0 0 0 0 0 0 0 0
Totale 36.252