PORTO @ Archivio Istituzionale della Ricerca

DONATI GUERRIERI, SIMONA
 Distribuzione geografica
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Continente #
NA - Nord America 19.350
EU - Europa 15.589
AS - Asia 9.604
SA - Sud America 927
Continente sconosciuto - Info sul continente non disponibili 386
AF - Africa 188
OC - Oceania 6
Totale 46.050
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Nazione #
US - Stati Uniti d'America 19.111
IT - Italia 3.347
SG - Singapore 2.961
GB - Regno Unito 2.842
DE - Germania 2.686
FR - Francia 2.475
CN - Cina 1.955
VN - Vietnam 1.899
RU - Federazione Russa 937
UA - Ucraina 921
BR - Brasile 698
KR - Corea 648
NL - Olanda 496
HK - Hong Kong 480
TR - Turchia 427
SE - Svezia 361
IE - Irlanda 348
IN - India 310
CH - Svizzera 295
FI - Finlandia 242
AT - Austria 168
JP - Giappone 144
BE - Belgio 142
BD - Bangladesh 124
CA - Canada 112
JO - Giordania 90
TW - Taiwan 88
AR - Argentina 70
ID - Indonesia 70
AP - ???statistics.table.value.countryCode.AP??? 67
PH - Filippine 64
TH - Thailandia 63
IQ - Iraq 55
CO - Colombia 54
SN - Senegal 50
MX - Messico 49
PK - Pakistan 49
RO - Romania 44
ES - Italia 41
EC - Ecuador 31
ZA - Sudafrica 31
BG - Bulgaria 28
CL - Cile 27
EU - Europa 27
AE - Emirati Arabi Uniti 24
IL - Israele 24
EG - Egitto 22
MY - Malesia 22
IR - Iran 21
NO - Norvegia 21
CZ - Repubblica Ceca 19
KE - Kenya 18
PL - Polonia 17
PY - Paraguay 17
UZ - Uzbekistan 17
MA - Marocco 16
VE - Venezuela 16
JM - Giamaica 15
PT - Portogallo 13
DZ - Algeria 12
TT - Trinidad e Tobago 12
SA - Arabia Saudita 11
CR - Costa Rica 10
HU - Ungheria 10
HN - Honduras 9
NG - Nigeria 8
GT - Guatemala 7
HR - Croazia 7
PS - Palestinian Territory 7
ET - Etiopia 6
GR - Grecia 6
LB - Libano 6
NP - Nepal 6
TN - Tunisia 6
UY - Uruguay 6
AL - Albania 5
BJ - Benin 5
LT - Lituania 5
LU - Lussemburgo 5
RS - Serbia 5
SD - Sudan 5
SV - El Salvador 5
BO - Bolivia 4
GE - Georgia 4
KG - Kirghizistan 4
KZ - Kazakistan 4
LV - Lettonia 4
NI - Nicaragua 4
PA - Panama 4
PE - Perù 4
XK - ???statistics.table.value.countryCode.XK??? 4
AM - Armenia 3
AU - Australia 3
AZ - Azerbaigian 3
BB - Barbados 3
BS - Bahamas 3
DO - Repubblica Dominicana 3
GA - Gabon 3
OM - Oman 3
BZ - Belize 2
Totale 45.635
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Città #
Ashburn 4.485
Southend 2.470
Seattle 2.133
Singapore 1.511
San Jose 1.113
Fairfield 1.081
Chandler 624
Turin 624
Woodbridge 524
Princeton 522
Ho Chi Minh City 500
Ann Arbor 480
San Ramon 474
Jacksonville 466
Hanoi 455
Houston 437
Wilmington 405
Beijing 401
Hong Kong 388
Cambridge 372
Bologna 361
Dublin 329
Berlin 328
Izmir 308
Torino 305
Santa Clara 302
Boardman 285
Council Bluffs 259
Bern 240
Dallas 217
Seoul 214
Lauterbourg 208
Buffalo 201
Helsinki 201
Los Angeles 196
Chicago 186
San Donato Milanese 172
Frankfurt 166
San Francisco 163
Milan 136
Baltimore 134
Brussels 130
Shanghai 127
Pennsylvania Furnace 123
Zaporozhye 121
Overberg 118
Rome 115
Des Moines 113
North Bergen 109
Hefei 107
Saint Petersburg 106
Zhengzhou 99
Monopoli 98
Padua 91
The Dalles 91
Amsterdam 89
Vienna 89
Da Nang 83
New York 74
Haiphong 70
London 65
San Diego 64
Guangzhou 61
Phoenix 57
Malatya 56
Moscow 56
Jakarta 52
Fremont 51
Groningen 51
Shenzhen 51
Hangzhou 50
Mountain View 48
Norwalk 47
Redwood City 47
Frankfurt am Main 46
Tokyo 45
Menlo Park 44
Paris 43
Toronto 42
Istanbul 39
Kriens 39
Las Vegas 39
São Paulo 39
Atlanta 36
Modena 36
Nuremberg 36
Gilroy 33
Valfenera 33
Andover 30
Lappeenranta 30
Munich 28
Washington 28
Austin 27
Nanjing 27
Biên Hòa 26
Chennai 26
Melun 26
Kansas City 25
Baghdad 24
Brasília 24
Totale 27.956
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Nome #
A 22W 65% efficiency GaN Doherty power amplifier at 3.5 GHz for WiMAX applications 696
K-Band GaAs MMIC Doherty Power Amplifier for Microwave Radio With Optimized Driver 640
A K-band GaAs MMIC Doherty power amplifier for point-to-point microwave backhaul applications 598
3.5 GHz WiMAX GaN Doherty Power Amplifier with 2nd harmonic tuning 579
Dispositivi e tecnologie elettroniche 546
When self-consistency makes a difference 543
A generalized drift-diffusion model for rectifying Schottky contact simulation 526
Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models 525
Modeling and simulation of noise in transistors under large-signal condition 516
Behavioral modeling of GaN-based power amplifiers: impact of electrothermal feedback on the model accuracy and identification 511
A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation 469
Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications 468
A frequency-domain approach to the analysis of stability and bifurcations in nonlinear systems described by differential-algebraic equations 467
Large-signal device simulation in time- and frequency-domain: a comparison 466
Cyclostationary noise modeling of radio frequency devices 426
Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis 416
Application of Floquet Theory to the Large Signal Stability Analysis of Microwave Amplifiers 414
Noise source modeling for cyclostationary noise analysis in large-signal device operation 411
Harmonic Balance Simulation and Analysis 405
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part II: Discussion 388
Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems 385
Physics-based modeling of FinFET RF variability 384
Concurrent Dual-Band SiGe HBT Power Amplifier for Wireless Applications 379
Concurrent Efficient Evaluation of Small-Change Parameters and Green's Functions for TCAD Device Noise and Variability Analysis 370
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part I: Model derivation 368
Multi-gate FinFET Mixer Variability assessment through physics-based simulation 365
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions - Part I: Large-Signal Sensitivity 357
Green’s function based simulation of trap-induced device variability 350
Large-signal stability of symmetric multi-branch power amplifiers exploiting Floquet analysis 346
A Green's function approach to the analysis of non volatile memory device variability as a function of individual trap position 344
Self-consistent fully dynamic electro-thermal simulation of power HBTs 335
A comprehensive class A to B power and load-pull characterization of GaN HEMTs on SiC and sapphire substrates 333
Modeling elettrotermico auto-consistente di dispositivi HEMT su GaN per applicazioni di potenza 333
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II - Small-Signal and Conversion Matrix Sensitivity 331
Design and baseband predistortion of a 43.5 dBm GaN Doherty amplifier for 3.5 GHz WiMAX applications 329
Predistorsione in Banda Base per la linearizzazione di un amplificatore Doherty per applicazioni wireless con efficienza media del 50%. 326
7 GHz GaN MMIC power amplifier for microwave radio links with 45% drain efficiency in a wide power range 324
Compact modelling of cyclostationary noise in semiconductor devices: a critical discussion 323
Nonlinear characterization of advanced GaN HEMT devices 317
Sensitivity-based optimization and statistical analysis of microwave semiconductor devices through multidimensional physical simulation (invited article) 315
Innovative techniques for device large-signal noise simulations 314
Dynamic, self consistent electro-thermal simulation of power microwave devices including the effect of surface metallizations 313
Optimum design of a new predistortion scheme for high linearity K-band MMIC power amplifiers 304
Physics-based nonlinear noise modelling 301
Floquet-Based Stability Analysis of Power Amplifiers Including Distributed Elements 301
Self-Consistent Electrothermal Modeling of Class A, AB, and B Power GaN HEMTs Under Modulated RF Excitation 300
Microwave device optimization through efficient numerical simulation 299
Author's reply to "Comments on "Noise source modeling for cyclostationary noise analysis in large-signal device operation"" 296
A surface-potential-based MOSFET compact model accounting for random doping fluctuations 294
Low-frequency noise conversion modeling in RF devices under forced nonlinear operation 292
Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high-power applications 292
Base-band Predistortion Linearization scheme of High Efficiency Power Amplifiers for wireless applications 289
Physics-based analysis of FinFET RF variability including parasitics 288
Technology CAD for Microwaves: From Devices to Circuit Performance: Technology CAD for Microwaves 284
Caratterizzazione non-lineare di HEMT su GaN per applicazioni di potenza 282
Self-Consistent Coupled Carrier Transport Full-Wave EM Analysis of Semiconductor Travelling-Wave Devices 280
Application of physical models to circuit simulations 280
Key issues in trap-assisted low-frequency device noise simulation in nonlinear large-signal conditions 274
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators 274
Advanced Neural Network Techniques for GaN-HEMT Dynamic Behavior Characterization 272
Variability of FinFET AC parameters: A physics-based insight 271
GaN HEMT Technology Development Assessment through Nonlinear Characterization 270
Physics-based mixer noise simulation 269
Frequency-domain ANN Non-linear Active Device Model for Harmonic-Balance-based CAD 268
A new dynamic self-consistent electro-thermal model of power HBTs and a novelinterpretation of thermal collapse loci in multi-finger devices 268
An efficient numerical approach to the physics-based sensitivity analysis of bipolar semiconductor devices 268
Simulazione e progetto termico di transistori eMMIC di potenza su semiconduttori composti per applicazioni spaziali 266
Fabrication and non-linear load-pull characterization of GaN HEMT on SiC for high power applications 265
Dispositivi e circuiti elettronici 265
Assessment of GaN-based power amplifiers through self-consistent electrothermal modelling and nonlinear characterization. 264
Physics-based noise modelling of semiconductor devices in large-signal operation including low-frequency noise conversion effects 259
A Comprehensive GaN HEMT Characterization for Power Amplifier Design 258
Considerations on the impact of power device dynamic electrothermal phenomena on power amplifier non-linearities 254
Self-Consistent electro-thermal model for GaN HEMTs devices evaluation 252
Physics-based modeling of FinFET RF variability under Shorted- and Independent-Gates bias 252
Simulazione e progetto termico di transistori e MMIC di potenza su semiconduttori composti per applicazioni spaziali 250
Two-dimensional physics-based low-frequency noise modeling of bipolar semiconductor devices in small- and large-signal operation 249
Small and large signal trap-assisted GR noise modeling in semiconductor devices 249
Large-signal variability of microwave power amplifiers through efficient device sensitivity-based physical modeling 249
A New Analytical Model for High Frequency MOSFET Noise 249
Kinetic and Partial-Differential Equation Modeling of Noise in Schottky Barrier Diodes: a Comparison 248
Thermal modeling of RF FinFET PAs through temperature-dependent X-parameters extracted from physics-based simulations 246
On linearisation of microwave-transmitter solid-state power amplifiers 245
Physics-based Noise Simulation of Semiconductor Devices Under Large-signal Operation 243
A New, Closed-Form Compact Model for the Cyclostationary Noise and LS Conversion Behaviour of RF Junction Diodes 240
CAD-oriented, physics-based large- and small-signal noise analysis of bipolar semiconductor devices 239
Non-linear Microwave Transistor Modeling through ANNs: a Frequency-domain CAD Implementation 238
Impact of Substrate Resistance on Drain Current Noise in MOSFETs 238
Rigorous, HB-based nonlinear stability analysis of multi-device power amplifier 236
A new approach to the physics-based noise analysis of semiconductor devices operating in large signal, (quasi) periodic regime 235
A general framework for the noise analysis of semiconductor devices operating in nonlinear (large-signal quasi-periodic) conditions 235
RF sensitivity analysis of independent-gates FinFETs for analog applications exploiting the back-gating effect 235
Nonlinear models with nonlinear memory 232
Physics-based RF noise modeling of submicron MOSFETs 229
Design of MultiBand SiGe HBT Power Amplifier: from device characterization to system level evaluation 229
Simulazione di rumore di Generazione-Ricombinazione assistito da trappole nei dispositivi elettronici operanti in regime di piccolo e ampio segnale 228
A new predistortion scheme with efficient IMP optimization for high linearity MMIC power amplifiers 227
Simulation of cyclostationary noise in semiconductor devices 225
A distributed analytical model for pn junction small- and large-signal noise analysis in low injection conditions 224
RF power amplifier linearisation: an overview 222
Totale 32.642
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Categoria #
all - tutte 129.990
article - articoli 38.757
book - libri 2.074
conference - conferenze 87.527
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.632
Totale 259.980
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.789 0 0 8 92 181 177 120 64 113 159 400 475
2022/20232.896 268 433 76 181 258 377 271 160 348 24 184 316
2023/2024891 51 81 71 63 91 79 48 42 26 50 165 124
2024/20253.738 49 606 177 402 283 153 176 303 591 244 340 414
2025/202610.393 403 557 628 951 659 705 1.523 796 2.134 1.082 319 636
2026/2027968 430 312 226 0 0 0 0 0 0 0 0 0
Totale 46.050