PORTO @ Archivio Istituzionale della Ricerca

DONATI GUERRIERI, SIMONA
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 17.958
EU - Europa 15.331
AS - Asia 9.377
SA - Sud America 902
AF - Africa 187
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 6
Totale 43.768
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 17.807
IT - Italia 3.144
SG - Singapore 2.881
GB - Regno Unito 2.836
DE - Germania 2.679
FR - Francia 2.461
CN - Cina 1.922
VN - Vietnam 1.895
RU - Federazione Russa 937
UA - Ucraina 921
BR - Brasile 687
KR - Corea 647
NL - Olanda 493
HK - Hong Kong 475
TR - Turchia 427
SE - Svezia 353
IE - Irlanda 348
IN - India 308
CH - Svizzera 292
FI - Finlandia 242
AT - Austria 168
JP - Giappone 141
BE - Belgio 136
JO - Giordania 90
TW - Taiwan 86
CA - Canada 83
ID - Indonesia 69
AP - ???statistics.table.value.countryCode.AP??? 67
AR - Argentina 67
PH - Filippine 63
TH - Thailandia 62
IQ - Iraq 55
SN - Senegal 50
CO - Colombia 49
PK - Pakistan 49
MX - Messico 44
RO - Romania 44
ES - Italia 37
BD - Bangladesh 34
ZA - Sudafrica 31
EC - Ecuador 30
BG - Bulgaria 28
EU - Europa 27
CL - Cile 26
AE - Emirati Arabi Uniti 24
IL - Israele 24
EG - Egitto 21
IR - Iran 21
MY - Malesia 21
NO - Norvegia 21
CZ - Repubblica Ceca 19
KE - Kenya 18
PY - Paraguay 17
UZ - Uzbekistan 17
MA - Marocco 16
PL - Polonia 16
VE - Venezuela 13
DZ - Algeria 12
PT - Portogallo 11
SA - Arabia Saudita 11
HU - Ungheria 10
NG - Nigeria 8
HR - Croazia 7
PS - Palestinian Territory 7
ET - Etiopia 6
GR - Grecia 6
LB - Libano 6
TN - Tunisia 6
UY - Uruguay 6
AL - Albania 5
BJ - Benin 5
LU - Lussemburgo 5
RS - Serbia 5
SD - Sudan 5
GE - Georgia 4
KG - Kirghizistan 4
KZ - Kazakistan 4
LT - Lituania 4
LV - Lettonia 4
PE - Perù 4
XK - ???statistics.table.value.countryCode.XK??? 4
AM - Armenia 3
AU - Australia 3
AZ - Azerbaigian 3
BO - Bolivia 3
CR - Costa Rica 3
DO - Repubblica Dominicana 3
GA - Gabon 3
GT - Guatemala 3
HN - Honduras 3
NP - Nepal 3
OM - Oman 3
PA - Panama 3
BS - Bahamas 2
CI - Costa d'Avorio 2
EE - Estonia 2
IS - Islanda 2
JM - Giamaica 2
LK - Sri Lanka 2
MD - Moldavia 2
Totale 43.738
Salva come PNG Salva come JPEG
Città #
Ashburn 4.324
Southend 2.470
Seattle 2.128
Singapore 1.499
Fairfield 1.081
San Jose 925
Chandler 624
Turin 590
Woodbridge 523
Princeton 522
Ho Chi Minh City 499
Ann Arbor 480
San Ramon 474
Jacksonville 466
Hanoi 454
Houston 435
Wilmington 405
Beijing 395
Hong Kong 383
Cambridge 372
Bologna 359
Dublin 329
Berlin 328
Izmir 308
Torino 305
Boardman 262
Santa Clara 244
Bern 240
Seoul 213
Lauterbourg 208
Dallas 203
Helsinki 201
Buffalo 197
Los Angeles 182
Chicago 176
San Donato Milanese 172
Frankfurt 166
San Francisco 160
Council Bluffs 146
Brussels 130
Shanghai 127
Baltimore 125
Pennsylvania Furnace 123
Zaporozhye 121
Overberg 118
Des Moines 113
North Bergen 109
Hefei 107
Saint Petersburg 106
Monopoli 98
Zhengzhou 98
Milan 91
Padua 91
Amsterdam 89
Vienna 89
Rome 85
Da Nang 81
The Dalles 77
Haiphong 70
London 65
San Diego 64
Guangzhou 61
New York 58
Malatya 56
Moscow 56
Jakarta 52
Fremont 51
Groningen 51
Shenzhen 51
Hangzhou 49
Mountain View 47
Norwalk 47
Redwood City 47
Menlo Park 44
Tokyo 44
Frankfurt am Main 42
Istanbul 39
Kriens 39
São Paulo 38
Las Vegas 37
Paris 37
Toronto 37
Nuremberg 36
Modena 35
Atlanta 33
Gilroy 33
Valfenera 33
Andover 30
Lappeenranta 30
Munich 28
Nanjing 27
Biên Hòa 26
Chennai 26
Melun 26
Austin 25
Kansas City 25
Phoenix 25
Washington 25
Baghdad 24
Belo Horizonte 23
Totale 27.118
Salva come PNG Salva come JPEG
Nome #
A 22W 65% efficiency GaN Doherty power amplifier at 3.5 GHz for WiMAX applications 679
K-Band GaAs MMIC Doherty Power Amplifier for Microwave Radio With Optimized Driver 592
A K-band GaAs MMIC Doherty power amplifier for point-to-point microwave backhaul applications 587
3.5 GHz WiMAX GaN Doherty Power Amplifier with 2nd harmonic tuning 553
Dispositivi e tecnologie elettroniche 530
When self-consistency makes a difference 529
A generalized drift-diffusion model for rectifying Schottky contact simulation 517
Modeling and simulation of noise in transistors under large-signal condition 502
Behavioral modeling of GaN-based power amplifiers: impact of electrothermal feedback on the model accuracy and identification 502
Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models 500
Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications 457
A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation 455
A frequency-domain approach to the analysis of stability and bifurcations in nonlinear systems described by differential-algebraic equations 454
Large-signal device simulation in time- and frequency-domain: a comparison 452
Cyclostationary noise modeling of radio frequency devices 410
Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis 406
Application of Floquet Theory to the Large Signal Stability Analysis of Microwave Amplifiers 404
Noise source modeling for cyclostationary noise analysis in large-signal device operation 401
Harmonic Balance Simulation and Analysis 399
Concurrent Dual-Band SiGe HBT Power Amplifier for Wireless Applications 374
Physics-based modeling of FinFET RF variability 373
Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems 371
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part II: Discussion 362
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part I: Model derivation 352
Concurrent Efficient Evaluation of Small-Change Parameters and Green's Functions for TCAD Device Noise and Variability Analysis 352
Multi-gate FinFET Mixer Variability assessment through physics-based simulation 351
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions - Part I: Large-Signal Sensitivity 343
A Green's function approach to the analysis of non volatile memory device variability as a function of individual trap position 340
Large-signal stability of symmetric multi-branch power amplifiers exploiting Floquet analysis 339
Green’s function based simulation of trap-induced device variability 329
Self-consistent fully dynamic electro-thermal simulation of power HBTs 329
Modeling elettrotermico auto-consistente di dispositivi HEMT su GaN per applicazioni di potenza 328
A comprehensive class A to B power and load-pull characterization of GaN HEMTs on SiC and sapphire substrates 325
Predistorsione in Banda Base per la linearizzazione di un amplificatore Doherty per applicazioni wireless con efficienza media del 50%. 322
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II - Small-Signal and Conversion Matrix Sensitivity 321
Compact modelling of cyclostationary noise in semiconductor devices: a critical discussion 320
Design and baseband predistortion of a 43.5 dBm GaN Doherty amplifier for 3.5 GHz WiMAX applications 319
7 GHz GaN MMIC power amplifier for microwave radio links with 45% drain efficiency in a wide power range 314
Nonlinear characterization of advanced GaN HEMT devices 310
Sensitivity-based optimization and statistical analysis of microwave semiconductor devices through multidimensional physical simulation (invited article) 310
Innovative techniques for device large-signal noise simulations 309
Dynamic, self consistent electro-thermal simulation of power microwave devices including the effect of surface metallizations 308
Floquet-Based Stability Analysis of Power Amplifiers Including Distributed Elements 299
Optimum design of a new predistortion scheme for high linearity K-band MMIC power amplifiers 293
Self-Consistent Electrothermal Modeling of Class A, AB, and B Power GaN HEMTs Under Modulated RF Excitation 291
A surface-potential-based MOSFET compact model accounting for random doping fluctuations 290
Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high-power applications 286
Physics-based nonlinear noise modelling 285
Physics-based analysis of FinFET RF variability including parasitics 284
Base-band Predistortion Linearization scheme of High Efficiency Power Amplifiers for wireless applications 284
Author's reply to "Comments on "Noise source modeling for cyclostationary noise analysis in large-signal device operation"" 283
Low-frequency noise conversion modeling in RF devices under forced nonlinear operation 281
Application of physical models to circuit simulations 277
Microwave device optimization through efficient numerical simulation 276
Caratterizzazione non-lineare di HEMT su GaN per applicazioni di potenza 275
Key issues in trap-assisted low-frequency device noise simulation in nonlinear large-signal conditions 270
Advanced Neural Network Techniques for GaN-HEMT Dynamic Behavior Characterization 269
Self-Consistent Coupled Carrier Transport Full-Wave EM Analysis of Semiconductor Travelling-Wave Devices 267
GaN HEMT Technology Development Assessment through Nonlinear Characterization 264
An efficient numerical approach to the physics-based sensitivity analysis of bipolar semiconductor devices 264
A new dynamic self-consistent electro-thermal model of power HBTs and a novelinterpretation of thermal collapse loci in multi-finger devices 263
Variability of FinFET AC parameters: A physics-based insight 263
Simulazione e progetto termico di transistori eMMIC di potenza su semiconduttori composti per applicazioni spaziali 261
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators 261
Dispositivi e circuiti elettronici 260
Fabrication and non-linear load-pull characterization of GaN HEMT on SiC for high power applications 259
Physics-based mixer noise simulation 258
Assessment of GaN-based power amplifiers through self-consistent electrothermal modelling and nonlinear characterization. 258
A Comprehensive GaN HEMT Characterization for Power Amplifier Design 254
Self-Consistent electro-thermal model for GaN HEMTs devices evaluation 249
Considerations on the impact of power device dynamic electrothermal phenomena on power amplifier non-linearities 248
Physics-based noise modelling of semiconductor devices in large-signal operation including low-frequency noise conversion effects 247
Small and large signal trap-assisted GR noise modeling in semiconductor devices 245
Simulazione e progetto termico di transistori e MMIC di potenza su semiconduttori composti per applicazioni spaziali 245
Kinetic and Partial-Differential Equation Modeling of Noise in Schottky Barrier Diodes: a Comparison 245
Two-dimensional physics-based low-frequency noise modeling of bipolar semiconductor devices in small- and large-signal operation 244
A New Analytical Model for High Frequency MOSFET Noise 243
Physics-based modeling of FinFET RF variability under Shorted- and Independent-Gates bias 243
Large-signal variability of microwave power amplifiers through efficient device sensitivity-based physical modeling 242
Thermal modeling of RF FinFET PAs through temperature-dependent X-parameters extracted from physics-based simulations 240
CAD-oriented, physics-based large- and small-signal noise analysis of bipolar semiconductor devices 236
On linearisation of microwave-transmitter solid-state power amplifiers 235
A New, Closed-Form Compact Model for the Cyclostationary Noise and LS Conversion Behaviour of RF Junction Diodes 233
RF sensitivity analysis of independent-gates FinFETs for analog applications exploiting the back-gating effect 232
A new approach to the physics-based noise analysis of semiconductor devices operating in large signal, (quasi) periodic regime 231
Impact of Substrate Resistance on Drain Current Noise in MOSFETs 228
Rigorous, HB-based nonlinear stability analysis of multi-device power amplifier 227
Nonlinear models with nonlinear memory 227
Physics-based RF noise modeling of submicron MOSFETs 224
Physics-based Noise Simulation of Semiconductor Devices Under Large-signal Operation 223
Design of MultiBand SiGe HBT Power Amplifier: from device characterization to system level evaluation 223
Simulazione di rumore di Generazione-Ricombinazione assistito da trappole nei dispositivi elettronici operanti in regime di piccolo e ampio segnale 222
Simulation of cyclostationary noise in semiconductor devices 220
A new predistortion scheme with efficient IMP optimization for high linearity MMIC power amplifiers 219
A distributed analytical model for pn junction small- and large-signal noise analysis in low injection conditions 219
RF power amplifier linearisation: an overview 215
Nonlinear noise in devices: sources, frequency conversion mechanisms and statistical noise process characterization 213
An efficient physics-based CAD approach to evaluate the sensitivity of GaAs devices with respect to process parameters 212
Thermal simulation and optimization of AlGaN/GaN HEMTs 211
Analisi statistica e ottimizzazione di dispositivi MESFET per microonde 210
Totale 31.556
Salva come PNG Salva come JPEG
Categoria #
all - tutte 120.629
article - articoli 36.038
book - libri 1.969
conference - conferenze 81.083
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.539
Totale 241.258
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021266 0 0 0 0 0 0 0 0 0 0 154 112
2021/20222.033 89 155 8 92 181 177 120 64 113 159 400 475
2022/20232.896 268 433 76 181 258 377 271 160 348 24 184 316
2023/2024891 51 81 71 63 91 79 48 42 26 50 165 124
2024/20253.738 49 606 177 402 283 153 176 303 591 244 340 414
2025/20269.450 403 557 628 951 659 705 1.523 796 2.134 1.082 12 0
Totale 44.139