We present an efficient simulation technique to account for the thermal spreading effects of surface metallizations in the self-consistent dynamic electro-thermal analysis of power microwave devices. Electro-thermal self-consistency is achieved by solving the coupled nonlinear system made of a temperature dependent device electrical model, and of an approximate description of the device thermal behavior through a thermal impedance matrix. The numerical solution is pursued in the frequency domain by the Harmonic Balance technique. The approach is applied to the thermal stability analysis of power AlGaAs/GaAs HBTs and the results show that metallizations have a significant impact on the occurrence of the device thermal collapse.

Dynamic, self consistent electro-thermal simulation of power microwave devices including the effect of surface metallizations / Cappelluti, Federica; Bonani, Fabrizio; DONATI GUERRIERI, Simona; Ghione, Giovanni; Naldi, Carlo; Pirola, Marco. - (2002), pp. 209-212. ((Intervento presentato al convegno Gallium Arsenide applications symposium. GAAS 2002 tenutosi a Milano (ITA) nel 23-24 Sep. 2002.

Dynamic, self consistent electro-thermal simulation of power microwave devices including the effect of surface metallizations

CAPPELLUTI, Federica;BONANI, Fabrizio;DONATI GUERRIERI, Simona;GHIONE, GIOVANNI;NALDI, Carlo;PIROLA, Marco
2002

Abstract

We present an efficient simulation technique to account for the thermal spreading effects of surface metallizations in the self-consistent dynamic electro-thermal analysis of power microwave devices. Electro-thermal self-consistency is achieved by solving the coupled nonlinear system made of a temperature dependent device electrical model, and of an approximate description of the device thermal behavior through a thermal impedance matrix. The numerical solution is pursued in the frequency domain by the Harmonic Balance technique. The approach is applied to the thermal stability analysis of power AlGaAs/GaAs HBTs and the results show that metallizations have a significant impact on the occurrence of the device thermal collapse.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/1708094
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