Archivio Istituzionale della RicercaSome recent advances and promising results of GaN technology developed by AMS are presented in this work. Due to the wide band-gap properties of this material, these devices are very well suited for high power applications, and must be characterized under strongly non-linear and high power conditions. Pulsed DC characterization and load-pull measurements have been performed on HEMT devices with different layouts and processes, in order to improve and refine the fabrication methodology. AMS devices show a good technology maturity, with performances comparable with state of the art.
Fabrication and non-linear load-pull characterization of GaN HEMT on SiC for high power applications / Teppati, Valeria; Camarchia, Vittorio; DONATI GUERRIERI, Simona; Pirola, Marco; Ferrero, ANDREA PIERENRICO; Ghione, Giovanni; M., Peroni; P., Romanini; C., Lanzieri; S., Lavanga; A., Serino; L., Mariucci. - STAMPA. - (2004), pp. 31-34. (Intervento presentato al convegno INMMIC, Integrated Non-linear Microwave and Millimetrewave Circuits Workshop tenutosi a Monte Porzio Catone, Roma (Italia) nel 15-16 November 2004).
Fabrication and non-linear load-pull characterization of GaN HEMT on SiC for high power applications
TEPPATI, VALERIA;CAMARCHIA, VITTORIO;DONATI GUERRIERI, Simona;PIROLA, Marco;FERRERO, ANDREA PIERENRICO;GHIONE, GIOVANNI;
2004
Abstract
Some recent advances and promising results of GaN technology developed by AMS are presented in this work. Due to the wide band-gap properties of this material, these devices are very well suited for high power applications, and must be characterized under strongly non-linear and high power conditions. Pulsed DC characterization and load-pull measurements have been performed on HEMT devices with different layouts and processes, in order to improve and refine the fabrication methodology. AMS devices show a good technology maturity, with performances comparable with state of the art.
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https://hdl.handle.net/11583/1418464
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