An MMIC GaN Doherty power amplifier is presented. This amplifier, optimized for C-band Microwave Radio links, is designed to reach the maximum efficiency at the output power back-off level where the data distribution function of the modulated input signal has its maximum. The design approach was carried out through a careful investigation of load pull measurements at the fundamental and second harmonic, in conjunction with an accurate active device model, thus leading to a robust design strategy. The designed PA shows, at 7 GHz, a maximum PAE of 35% at more than 7 dB of back-off from the maximum output power and the Doherty high efficiency region covers a 10 dB back-off range from saturation; the maximum output power is in excess of 37 dBm. The MMIC power amplifier has been fabricated at the GigaHertz Centre of Chalmers University, within a collaboration Politecnico di Torino-Ericsson Telecomunicazioni S.P.A.

7 GHz GaN MMIC power amplifier for microwave radio links with 45% drain efficiency in a wide power range / Quaglia, Roberto; Camarchia, Vittorio; Pirola, Marco; Donati Guerrieri, Simona; Tinivella, Riccardo; Ghione, Giovanni; Pagani, Maurizio. - STAMPA. - Unico:(2010), pp. 160-163. ((Intervento presentato al convegno 2010 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2010 tenutosi a Goteborg, sweden nel 2010 [10.1109/INMMIC.2010.5480110].

7 GHz GaN MMIC power amplifier for microwave radio links with 45% drain efficiency in a wide power range

Quaglia, Roberto;Camarchia, Vittorio;Pirola, Marco;Donati Guerrieri , Simona;Tinivella, Riccardo;Ghione, Giovanni;
2010

Abstract

An MMIC GaN Doherty power amplifier is presented. This amplifier, optimized for C-band Microwave Radio links, is designed to reach the maximum efficiency at the output power back-off level where the data distribution function of the modulated input signal has its maximum. The design approach was carried out through a careful investigation of load pull measurements at the fundamental and second harmonic, in conjunction with an accurate active device model, thus leading to a robust design strategy. The designed PA shows, at 7 GHz, a maximum PAE of 35% at more than 7 dB of back-off from the maximum output power and the Doherty high efficiency region covers a 10 dB back-off range from saturation; the maximum output power is in excess of 37 dBm. The MMIC power amplifier has been fabricated at the GigaHertz Centre of Chalmers University, within a collaboration Politecnico di Torino-Ericsson Telecomunicazioni S.P.A.
9781424474127
9781424474127
File in questo prodotto:
File Dimensione Formato  
05480110.pdf

non disponibili

Descrizione: postprint
Tipologia: 2. Post-print / Author's Accepted Manuscript
Licenza: Non Pubblico - Accesso privato/ristretto
Dimensione 747.5 kB
Formato Adobe PDF
747.5 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2658473
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo