CAMARCHIA, VITTORIO
 Distribuzione geografica
Continente #
NA - Nord America 23.856
EU - Europa 19.083
AS - Asia 11.725
SA - Sud America 1.077
Continente sconosciuto - Info sul continente non disponibili 514
AF - Africa 344
OC - Oceania 16
Totale 56.615
Nazione #
US - Stati Uniti d'America 23.515
IT - Italia 4.546
SG - Singapore 3.693
DE - Germania 3.652
GB - Regno Unito 2.763
FR - Francia 2.547
CN - Cina 2.342
VN - Vietnam 2.301
RU - Federazione Russa 1.244
UA - Ucraina 859
KR - Corea 812
BR - Brasile 787
NL - Olanda 703
HK - Hong Kong 677
SE - Svezia 633
TR - Turchia 380
IN - India 375
IE - Irlanda 330
FI - Finlandia 298
CH - Svizzera 286
BD - Bangladesh 283
AT - Austria 278
BE - Belgio 267
CA - Canada 192
JP - Giappone 168
ID - Indonesia 106
BG - Bulgaria 97
CO - Colombia 93
SN - Senegal 93
ES - Italia 88
TW - Taiwan 88
RO - Romania 82
TH - Thailandia 74
AR - Argentina 69
PH - Filippine 67
ZA - Sudafrica 65
AP - ???statistics.table.value.countryCode.AP??? 61
IQ - Iraq 60
SD - Sudan 59
IR - Iran 57
NO - Norvegia 57
MX - Messico 56
EU - Europa 46
PL - Polonia 46
JO - Giordania 42
GR - Grecia 39
MY - Malesia 39
CL - Cile 38
CZ - Repubblica Ceca 38
PK - Pakistan 38
PT - Portogallo 34
EC - Ecuador 33
EG - Egitto 29
AL - Albania 26
IL - Israele 22
KE - Kenya 22
VE - Venezuela 21
AE - Emirati Arabi Uniti 19
SA - Arabia Saudita 18
CR - Costa Rica 16
JM - Giamaica 16
DZ - Algeria 15
AU - Australia 14
MA - Marocco 13
PY - Paraguay 13
UZ - Uzbekistan 13
TT - Trinidad e Tobago 12
PE - Perù 11
HN - Honduras 10
HR - Croazia 10
HU - Ungheria 10
NG - Nigeria 10
AZ - Azerbaigian 9
LT - Lituania 9
TN - Tunisia 9
DK - Danimarca 8
GT - Guatemala 8
CI - Costa d'Avorio 7
EE - Estonia 7
NP - Nepal 7
XK - ???statistics.table.value.countryCode.XK??? 7
ET - Etiopia 6
KZ - Kazakistan 6
NI - Nicaragua 6
MD - Moldavia 5
OM - Oman 5
AM - Armenia 4
BO - Bolivia 4
LV - Lettonia 4
PA - Panama 4
SI - Slovenia 4
SV - El Salvador 4
UY - Uruguay 4
BB - Barbados 3
BN - Brunei Darussalam 3
DO - Repubblica Dominicana 3
GY - Guiana 3
IS - Islanda 3
KG - Kirghizistan 3
PS - Palestinian Territory 3
Totale 56.064
Città #
Ashburn 4.693
Dallas 3.106
Southend 2.299
Singapore 1.763
Seattle 1.682
San Jose 1.207
Fairfield 1.129
Turin 916
Chandler 699
Ann Arbor 653
Ho Chi Minh City 609
Houston 608
Woodbridge 589
Santa Clara 585
Hong Kong 546
Frankfurt 542
Hanoi 540
Princeton 537
Beijing 517
Torino 452
Wilmington 444
Cambridge 441
Jacksonville 418
Boardman 380
Seoul 353
San Ramon 337
Bologna 335
Berlin 322
Dublin 312
Council Bluffs 307
Los Angeles 305
Rome 292
Buffalo 283
San Francisco 256
Brussels 246
Milan 240
Izmir 239
Lauterbourg 228
Bern 227
Helsinki 215
Chicago 205
San Donato Milanese 193
Shanghai 167
Groningen 161
Hefei 158
North Bergen 155
Zhengzhou 148
Vienna 144
Moscow 143
Frankfurt am Main 128
The Dalles 120
Amsterdam 114
New York 114
Saint Petersburg 113
Baltimore 109
Des Moines 109
Zaporozhye 106
Pennsylvania Furnace 97
Da Nang 95
Sofia 92
Haiphong 91
Jakarta 80
Munich 79
Hangzhou 77
Atlanta 75
Overberg 75
Guangzhou 73
São Paulo 72
Monopoli 68
Nuremberg 63
Phoenix 62
Tokyo 61
Galati 58
Shenzhen 57
Istanbul 56
Padua 56
Toronto 54
San Diego 52
Malatya 51
Austin 50
Mountain View 49
Valfenera 49
Norwalk 48
Naples 46
Stavanger 46
Fremont 44
Washington 44
Lappeenranta 42
Redwood City 42
Columbus 41
London 41
Falls Church 36
Indiana 33
Las Vegas 33
Montreal 32
Orem 32
Stockholm 32
Andover 31
Redmond 31
Turku 31
Totale 34.616
Nome #
A 0.6–3.8 GHz GaN Power Amplifier Designed Through a Simple Strategy 3.862
Piezoresistive flexible composite for robotic tactile applications 868
A design strategy for AM/PM compensation in GaN Doherty Power Amplifiers 852
A 22W 65% efficiency GaN Doherty power amplifier at 3.5 GHz for WiMAX applications 702
Accurate large-signal equivalent circuit of surface channel diamond FETs based on the Chalmers model 683
K-Band GaAs MMIC Doherty Power Amplifier for Microwave Radio With Optimized Driver 659
A K-band GaAs MMIC Doherty power amplifier for point-to-point microwave backhaul applications 612
X-band wideband 5W GaN MMIC power amplifier with large-signal gain equalization 610
The Doherty Power Amplifier: Review of Recent Solutions and Trends 600
Ag nanoparticle-based inkjet printed planar transmission lines for RF and microwave applications: considerations on ink composition, nanoparticle size distribution and sintering time 597
3-3.6 GHz Wideband GaN Doherty power amplifier exploiting output compensation stages 587
3.5 GHz WiMAX GaN Doherty Power Amplifier with 2nd harmonic tuning 584
Evaluating GaN Doherty architectures for 4G Picocells, WiMax and microwave backhaul links 579
An overview on recent developments in RF and microwave power H-terminated diamond MESFET technology 572
Development of single-stage and Doherty GaN-based hybrid RF power amplifiers for quasi-constant envelope and high PAPR wireless standards 560
When self-consistency makes a difference 548
GaN Monolithic Power Amplifiers for Microwave Backhaul Applications 538
A 4-W Doherty Power Amplifier in GaN MMIC Technology for 15-GHz Applications 525
Behavioral modeling of GaN-based power amplifiers: impact of electrothermal feedback on the model accuracy and identification 516
Telecommunication electronics 511
Microwave Measurements. Part II – Nonlinear Measurements 474
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 471
Bandwidth extension of GaN Doherty power amplifier: Effect on power, efficiency and linearity 457
High Efficiency Power Amplifiers for Modern Mobile Communications: The Load-Modulation Approach 452
Dual-Band GaN MMIC Power Amplifier for Microwave Backhaul Applications 440
Design and characterization of SiC varactor-based phase shifters 433
Simulation and design of OFET RFIDs through an analog/digital physics-based library 427
K-band MMIC power amplifier based on a 3-stacked GaAS pHEMT device 425
Demonstration of inkjet-printed silver nanoparticle microstrip lines on alumina for RF power modules 420
A 2-watt, 0.15-um GaAs pHEMT stacked amplifier at 22 GHz 417
RF power performance evaluation of surface channel diamond MESFETs 417
Microwave Measurements Part I: Linear Measurements 415
Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios 410
7 GHz MMIC GaN Doherty Power Amplifier With 47% Efficiency at 7 dB Output Back-Off 405
Low loss laser-written channel waveguides in porous silicon 402
Characterization-oriented design of a compact GaAs MMIC 3-stacked power cell 397
Assessment of silver nanoparticle inkjet-printed microstrip lines for RF and microwave applications2013 IEEE International Wireless Symposium (IWS) 396
Concurrent Dual-Band SiGe HBT Power Amplifier for Wireless Applications 385
Advanced GaN-based high frequency power amplifiers 384
GaN MMICs for microwave backhaul: Doherty vs. combined class-AB power amplifier 380
Theoretical investigation of GaN permeable base transistors for microwave power applications 376
Microwave Measurements – Part III. Advanced Non-Linear Measurements 366
Active Integrated Antennas for Efficient Mobile Terminals 365
A comprehensive comparison between GaN MMIC Doherty and combined class-AB power amplifiers for microwave radio links 358
GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project 357
System level characterization and digital predistortion of GaN MMIC Doherty power amplifiers for microwave point-to-point radios 357
Hybrid Ag-based inks for nanocomposite inkjet printed lines: RF properties 353
Electronics for Microwave Backhaul 351
Development strategy for GaN-based high-efficiency hybrid medium-power RF amplifiers through low-cost substrate prototyping 347
A comprehensive class A to B power and load-pull characterization of GaN HEMTs on SiC and sapphire substrates 345
Design and baseband predistortion of a 43.5 dBm GaN Doherty amplifier for 3.5 GHz WiMAX applications 338
Linear GaN MMIC Combined Power Amplifiers for 7-GHz Microwave Backhaul 337
A miniaturized wilkinson power divider for ultra wide-band operation 337
GaN MMIC Doherty power amplifier solutions for backhaul microwave links 337
Stacked GaAs pHEMTs: Design of a K-band power amplifier and experimental characterization of mismatch effects 336
SPICE library for low-cost RFID applications based on pentacene Organic FET 335
Modeling elettrotermico auto-consistente di dispositivi HEMT su GaN per applicazioni di potenza 334
Predistorsione in Banda Base per la linearizzazione di un amplificatore Doherty per applicazioni wireless con efficienza media del 50%. 334
On-wafer characterization setup for model extraction and validation of high-power GaN HEMT switches 332
7 GHz GaN MMIC power amplifier for microwave radio links with 45% drain efficiency in a wide power range 332
High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio Links 325
FPGA Implementation of Adaptive Baseband Predistortion for FET-Based Wireless Power Amplifiers 321
High-quality porous-silicon buried waveguides 319
Antenne integrate attive per terminali mobili ad alta efficienza 318
Nonlinear characterization of advanced GaN HEMT devices 317
A device level analog and digital subsystem SPICE library for the design of low-cost pentacene OFET RFIDs 314
Analysis of the impact of prototyping‐related parasitic effects in a hybrid GaN power amplifier for 5G FR1 applications 310
Physics Based Modeling of Submicron GaN Permeable Base Transistors 310
Design of an 87% Fractional Bandwidth Doherty Power Amplifier Supported by a Simplified Bandwidth Estimation Method 309
Advanced load-pull techniques–From single-ended to multiport/differential measurement systems 308
Self-Consistent Electrothermal Modeling of Class A, AB, and B Power GaN HEMTs Under Modulated RF Excitation 308
GaN-MMIC Doherty power amplifier with integrated reconfigurable input network for microwave backhaul applications 307
Improved phase linearity in source field plate AlGaN/GaN HEMTs 307
Effect of Load Modulation on Phase Distortion in Doherty Power Amplifiers 302
Radio frequency and microwave linear and nonlinear characterization 301
Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high-power applications 294
Base-band Predistortion Linearization scheme of High Efficiency Power Amplifiers for wireless applications 291
Caratterizzazione non-lineare di HEMT su GaN per applicazioni di potenza 287
Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs 279
RF power performance of submicron MESFET on hydrogen terminated polycrystalline diamond 279
Linearity and Efficiency Optimisation in Microwave Power Amplifier Design 278
GaN HEMT Technology Development Assessment through Nonlinear Characterization 274
Advanced Neural Network Techniques for GaN-HEMT Dynamic Behavior Characterization 273
FPGA-based digital predistortion of a 3.5 GHz GaN Doherty power amplifier 269
Fabrication and non-linear load-pull characterization of GaN HEMT on SiC for high power applications 269
Experimental investigation of bias current and load modulation effects in phase distortion of GaN HEMTs 268
Frequency extension of system level characterization and predistortion setup for on-wafer microwave power amplifiers 266
Assessment of GaN-based power amplifiers through self-consistent electrothermal modelling and nonlinear characterization. 265
Effect of CF4/O2 plasma damage on AlGaN/GaN HEMTs 263
A Comprehensive GaN HEMT Characterization for Power Amplifier Design 261
Considerations on the impact of power device dynamic electrothermal phenomena on power amplifier non-linearities 256
GaN Device Technology: Manufacturing, Characterization, Modelling and Verification. 253
Self-Consistent electro-thermal model for GaN HEMTs devices evaluation 253
Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology 252
Design Approach to Improve Linearity & Power Performance of Microwave FETs 251
Broadband Class-J GaN Doherty Power Amplifier 250
RF Dynamic Behavioral Model Suitable for GaN-HEMT Devices 246
Power amplifier MMICs for 15 GHz microwave links in 0.25 μm GaN technology 244
A Two-Way GaN Doherty Amplifier for 5G FR2 With Extended Back-Off Range 242
RF Power Performance Evaluation of Surface Channel Diamond MESFET 242
Totale 42.180
Categoria #
all - tutte 146.089
article - articoli 61.707
book - libri 2.539
conference - conferenze 79.183
curatela - curatele 0
other - altro 659
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.001
Totale 292.178


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.647 0 0 0 246 101 361 211 107 200 346 602 473
2022/20233.051 330 475 73 253 260 414 251 220 241 25 176 333
2023/20241.173 59 87 92 59 83 140 90 73 68 75 148 199
2024/20255.025 94 504 202 503 532 219 291 323 808 454 471 624
2025/202615.791 666 867 3.302 1.235 825 868 1.820 1.171 2.575 1.262 359 841
2026/20271.929 414 356 719 440 0 0 0 0 0 0 0 0
Totale 56.615