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EnglishThis paper presents three power amplifiers designed for 15 GHz microwave radio application employing GaN 0.25 μm technology. The first design is a 3W combined power amplifier, the second is a 7-15 GHz dual-band 3W combined power amplifier, and the third is a 4W Doherty power amplifier. Advantages and limitations of GaN 0.25 μm technology applied to the three different design solutions for this specific application are discussed, presenting and comparing the measurement results obtained on the developed amplifiers.
| Titolo: | Power amplifier MMICs for 15 GHz microwave links in 0.25 μm GaN technology |
| Autori: | |
| Data di pubblicazione: | 2017 |
| Abstract: | This paper presents three power amplifiers designed for 15 GHz microwave radio application employ...ing GaN 0.25 μm technology. The first design is a 3W combined power amplifier, the second is a 7-15 GHz dual-band 3W combined power amplifier, and the third is a 4W Doherty power amplifier. Advantages and limitations of GaN 0.25 μm technology applied to the three different design solutions for this specific application are discussed, presenting and comparing the measurement results obtained on the developed amplifiers. |
| ISBN: | 978-1-5090-5862-4 |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| 07927311.pdf | pubblicato | 2. Post-print / Author's Accepted Manuscript | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia |
http://hdl.handle.net/11583/2671216
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