Archivio Istituzionale della RicercaThis paper presents three power amplifiers designed for 15 GHz microwave radio application employing GaN 0.25 μm technology. The first design is a 3W combined power amplifier, the second is a 7-15 GHz dual-band 3W combined power amplifier, and the third is a 4W Doherty power amplifier. Advantages and limitations of GaN 0.25 μm technology applied to the three different design solutions for this specific application are discussed, presenting and comparing the measurement results obtained on the developed amplifiers.
Power amplifier MMICs for 15 GHz microwave links in 0.25 μm GaN technology / Camarchia, Vittorio; Quaglia, Roberto; Ramella, Chiara; Pirola, Marco. - STAMPA. - Unico:(2017), pp. 1-3. (Intervento presentato al convegno Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2017 Workshop on tenutosi a Graz, Austria nel April 20-21, 2017,) [10.1109/INMMIC.2017.7927311].
Power amplifier MMICs for 15 GHz microwave links in 0.25 μm GaN technology
CAMARCHIA, VITTORIO;QUAGLIA, ROBERTO;RAMELLA, CHIARA;PIROLA, Marco
2017
Abstract
This paper presents three power amplifiers designed for 15 GHz microwave radio application employing GaN 0.25 μm technology. The first design is a 3W combined power amplifier, the second is a 7-15 GHz dual-band 3W combined power amplifier, and the third is a 4W Doherty power amplifier. Advantages and limitations of GaN 0.25 μm technology applied to the three different design solutions for this specific application are discussed, presenting and comparing the measurement results obtained on the developed amplifiers.
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https://hdl.handle.net/11583/2671216
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