An ad hoc setup for complete on-chip large-signal characterization of both series and parallel high-power GaN high-electron-mobility transistor switches has been developed. Thanks to its characteristics, arbitrary loads at both switch terminals (i.e., drain and source) for power levels up to tens of watts can be applied. The setup is suitable for extraction and validation of equivalent circuit and behavioral models. The potentiality of the presented solution is demonstrated by model validation and measurements of series and shunt C-band high-power GaN high-electron-mobility transistor switches from two commercial foundries.
|Titolo:||On-wafer characterization setup for model extraction and validation of high-power GaN HEMT switches|
|Data di pubblicazione:||2017|
|Digital Object Identifier (DOI):||10.1002/jnm.2118|
|Appare nelle tipologie:||1.1 Articolo in rivista|
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