An ad hoc setup for complete on-chip large-signal characterization of both series and parallel high-power GaN high-electron-mobility transistor switches has been developed. Thanks to its characteristics, arbitrary loads at both switch terminals (i.e., drain and source) for power levels up to tens of watts can be applied. The setup is suitable for extraction and validation of equivalent circuit and behavioral models. The potentiality of the presented solution is demonstrated by model validation and measurements of series and shunt C-band high-power GaN high-electron-mobility transistor switches from two commercial foundries.

On-wafer characterization setup for model extraction and validation of high-power GaN HEMT switches / Pirola, Marco; Camarchia, Vittorio; Quaglia, Roberto; Ramella, Chiara. - In: INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS. - ISSN 0894-3370. - STAMPA. - 30:1(2017), pp. 1-6. [10.1002/jnm.2118]

On-wafer characterization setup for model extraction and validation of high-power GaN HEMT switches

PIROLA, Marco;CAMARCHIA, VITTORIO;QUAGLIA, ROBERTO;RAMELLA, CHIARA
2017

Abstract

An ad hoc setup for complete on-chip large-signal characterization of both series and parallel high-power GaN high-electron-mobility transistor switches has been developed. Thanks to its characteristics, arbitrary loads at both switch terminals (i.e., drain and source) for power levels up to tens of watts can be applied. The setup is suitable for extraction and validation of equivalent circuit and behavioral models. The potentiality of the presented solution is demonstrated by model validation and measurements of series and shunt C-band high-power GaN high-electron-mobility transistor switches from two commercial foundries.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2654944
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo