In this article, the minimization of asymmetry between lower and upper side band intermodulation products is discussed. Base-band and harmonics termination effects are analyzed by means of a Volterra Series approach, identifying novel conditions to minimize IMD asymmetry and IM3 power levels. The new inferred conditions do not involve base-band terminations, but harmonic load conditions. The proposed criteria are experimentally validated through harmonic load-pull measurements performed on a GaN HEMT under two-tone excitation. The resulting measurements are in agreement with the forecasted analysis results, showing an IMD asymmetry minimization, with a remarkable increase in C/I3 of 6 dBc, without affecting the output power (34 dBm) and power added efficiency (65%) levels attained at 1 dB compression point.
Design Approach to Improve Linearity & Power Performance of Microwave FETs / P., Colantonio; F., Giannini; E., Limiti; A., Nanni; Camarchia, Vittorio; Teppati, Valeria; Pirola, Marco. - In: INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING. - ISSN 1096-4290. - STAMPA. - 18:6(2008), pp. 527-535. [10.1002/mmce.20328]
Design Approach to Improve Linearity & Power Performance of Microwave FETs
CAMARCHIA, VITTORIO;TEPPATI, VALERIA;PIROLA, Marco
2008
Abstract
In this article, the minimization of asymmetry between lower and upper side band intermodulation products is discussed. Base-band and harmonics termination effects are analyzed by means of a Volterra Series approach, identifying novel conditions to minimize IMD asymmetry and IM3 power levels. The new inferred conditions do not involve base-band terminations, but harmonic load conditions. The proposed criteria are experimentally validated through harmonic load-pull measurements performed on a GaN HEMT under two-tone excitation. The resulting measurements are in agreement with the forecasted analysis results, showing an IMD asymmetry minimization, with a remarkable increase in C/I3 of 6 dBc, without affecting the output power (34 dBm) and power added efficiency (65%) levels attained at 1 dB compression point.Pubblicazioni consigliate
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https://hdl.handle.net/11583/1645651
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