In this article, the minimization of asymmetry between lower and upper side band intermodulation products is discussed. Base-band and harmonics termination effects are analyzed by means of a Volterra Series approach, identifying novel conditions to minimize IMD asymmetry and IM3 power levels. The new inferred conditions do not involve base-band terminations, but harmonic load conditions. The proposed criteria are experimentally validated through harmonic load-pull measurements performed on a GaN HEMT under two-tone excitation. The resulting measurements are in agreement with the forecasted analysis results, showing an IMD asymmetry minimization, with a remarkable increase in C/I3 of 6 dBc, without affecting the output power (34 dBm) and power added efficiency (65%) levels attained at 1 dB compression point.
|Titolo:||Design Approach to Improve Linearity & Power Performance of Microwave FETs|
|Data di pubblicazione:||2008|
|Digital Object Identifier (DOI):||10.1002/mmce.20328|
|Appare nelle tipologie:||1.1 Articolo in rivista|