The potentialities of GaN monolithic technology for the growing microwave backhaul power amplifier market are discussed in this paper. To support this discussion, two GaN monolithic Doherty power amplifiers for 7 GHz backhaul applications are presented. They exhibit 5 W output power, with almost 10 dB gain and high efficiency at 7 dB output power back-off. In particular, one module has been optimized for maximum efficiency at center frequency (47% at 7 dB output power back-off), while the other for high efficiency on a larger bandwidth (15% fractional bandwidth).

High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio Links / Camarchia, Vittorio; Jorge Jiulian Moreno, Rubio; Pirola, Marco; Quaglia, Roberto; Paolo, Colantonio; Franco, Giannini; Rocco, Giofre; Luca, Piazzon; Thomas, Emanuelsson; Tobias, Wegeland. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 60:10(2013), pp. 3592-3595. [10.1109/TED.2013.2274669]

High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio Links

CAMARCHIA, VITTORIO;PIROLA, Marco;QUAGLIA, ROBERTO;
2013

Abstract

The potentialities of GaN monolithic technology for the growing microwave backhaul power amplifier market are discussed in this paper. To support this discussion, two GaN monolithic Doherty power amplifiers for 7 GHz backhaul applications are presented. They exhibit 5 W output power, with almost 10 dB gain and high efficiency at 7 dB output power back-off. In particular, one module has been optimized for maximum efficiency at center frequency (47% at 7 dB output power back-off), while the other for high efficiency on a larger bandwidth (15% fractional bandwidth).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2515711
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