PORTO @ Archivio Istituzionale della Ricerca

GOANO, MICHELE
 Distribuzione geografica
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Continente #
NA - Nord America 17.909
EU - Europa 15.600
AS - Asia 6.320
SA - Sud America 693
AF - Africa 118
Continente sconosciuto - Info sul continente non disponibili 13
OC - Oceania 9
Totale 40.662
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Nazione #
US - Stati Uniti d'America 17.728
IT - Italia 3.489
GB - Regno Unito 3.122
DE - Germania 2.739
CN - Cina 2.493
FR - Francia 2.443
SG - Singapore 1.885
UA - Ucraina 854
BR - Brasile 612
KR - Corea 599
RU - Federazione Russa 586
NL - Olanda 409
TR - Turchia 402
IE - Irlanda 392
SE - Svezia 323
CH - Svizzera 284
AT - Austria 240
FI - Finlandia 223
HK - Hong Kong 193
BE - Belgio 168
CA - Canada 140
IN - India 139
MY - Malesia 102
ID - Indonesia 84
JP - Giappone 81
VN - Vietnam 81
EU - Europa 44
IR - Iran 43
ES - Italia 38
SN - Senegal 36
PL - Polonia 35
BG - Bulgaria 32
RO - Romania 27
TW - Taiwan 26
AE - Emirati Arabi Uniti 25
AP - ???statistics.table.value.countryCode.AP??? 25
IL - Israele 24
PK - Pakistan 24
MX - Messico 23
BD - Bangladesh 22
NO - Norvegia 19
ZA - Sudafrica 19
IQ - Iraq 18
AR - Argentina 17
LT - Lituania 16
SA - Arabia Saudita 16
EE - Estonia 14
CZ - Repubblica Ceca 13
DZ - Algeria 13
EC - Ecuador 13
CL - Cile 12
DK - Danimarca 12
KE - Kenya 12
CO - Colombia 11
HR - Croazia 11
PT - Portogallo 11
UZ - Uzbekistan 11
AU - Australia 9
GH - Ghana 9
JO - Giordania 8
KZ - Kazakistan 8
PY - Paraguay 8
AZ - Azerbaigian 7
GR - Grecia 7
MA - Marocco 7
BY - Bielorussia 6
EG - Egitto 6
NP - Nepal 6
PE - Perù 6
VE - Venezuela 6
HU - Ungheria 5
BO - Bolivia 4
LU - Lussemburgo 4
PH - Filippine 4
SI - Slovenia 4
TH - Thailandia 4
TN - Tunisia 4
AL - Albania 3
AM - Armenia 3
CI - Costa d'Avorio 3
DO - Repubblica Dominicana 3
NG - Nigeria 3
NI - Nicaragua 3
PS - Palestinian Territory 3
BB - Barbados 2
CR - Costa Rica 2
HN - Honduras 2
JM - Giamaica 2
KG - Kirghizistan 2
KW - Kuwait 2
LV - Lettonia 2
RS - Serbia 2
SC - Seychelles 2
SK - Slovacchia (Repubblica Slovacca) 2
SY - Repubblica araba siriana 2
UY - Uruguay 2
XK - ???statistics.table.value.countryCode.XK??? 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BH - Bahrain 1
BS - Bahamas 1
Totale 40.645
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Città #
Ashburn 4.138
Southend 2.789
Seattle 1.840
Fairfield 1.258
Singapore 1.004
Chandler 998
Beijing 870
Turin 824
Princeton 609
Woodbridge 607
Houston 604
Santa Clara 552
Ann Arbor 550
Cambridge 543
Boardman 514
Jacksonville 457
Wilmington 453
Berlin 406
Torino 391
Dublin 351
San Ramon 311
Izmir 302
Seoul 252
Bern 251
Dallas 251
Council Bluffs 192
Saint Petersburg 181
Milan 168
Chicago 165
Helsinki 159
Zhengzhou 158
Vienna 157
Des Moines 155
Brussels 154
San Donato Milanese 154
Shanghai 145
Hong Kong 120
Zaporozhye 116
Pennsylvania Furnace 108
Buffalo 107
Baltimore 104
Hefei 100
Frankfurt 99
Bologna 96
Amsterdam 90
Overberg 90
Los Angeles 86
Jakarta 83
Fremont 82
Guangzhou 78
Hangzhou 77
Shenzhen 77
Bremen 76
San Francisco 76
Mountain View 65
Rome 64
Munich 61
Monopoli 56
Redwood City 55
Padua 51
Paris 51
São Paulo 51
Toronto 50
Washington 49
Nuremberg 47
Piscataway 45
Valfenera 44
Herkenbosch 43
Istanbul 43
San Diego 43
Lappeenranta 40
Overland Park 36
Frankfurt am Main 34
London 34
Menlo Park 34
San Jose 34
Norwalk 33
New York 31
Columbus 30
Sofia 29
Hanoi 28
Wenzhou 28
Tokyo 27
Yubileyny 27
Melun 24
Moscow 24
St Petersburg 24
Guiyang 23
Ho Chi Minh City 23
Lecce 23
Rio de Janeiro 23
Andover 21
Atlanta 21
Durgapur 21
Jamaica Plain 20
Kunming 20
Redmond 20
Turku 20
Abu Dhabi 19
Miami 18
Totale 26.185
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Nome #
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 601
Theoretical investigation of BeZnO-based UV LEDs 545
Broad Band Coaxial Directional Couplers for High Power Applications 421
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 420
Alloy scattering in AlGaN and InGaN: A numerical study 416
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 412
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 407
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 402
Conformal Mapping Design Tools for Coaxial Couplers with Complex Cross Section 391
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations 379
Role of defects in the thermal droop of InGaN-based light emitting diodes 378
Simplex algorithm for band structure calculation of noncubic symmetry semiconductors: Application to III-nitride binaries and alloys 377
Revisiting the partial-capacitance approach to the analysis of coplanar transmission lines on multilayered substrates 367
Monte Carlo calculation of the electron capture time in single quantum wells 363
An accurate dual-expansion-point full-Brillouin-zone k center dot p model for wurtzite semiconductors 359
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part II. Ternaryalloys AlGaN, InGaN, and AlInN 349
Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN 349
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part I. Binarycompounds GaN, AlN, and InN 348
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 340
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 334
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 331
Numerical modeling of hole interband tunneling in wurtzite GaN and SiC 317
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 316
Analysis and design criteria of three-section DBR tunable lasers 312
A numerical study of Auger recombination in bulk InGaN 309
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 307
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 305
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 305
DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS 302
Theoretical investigation of GaN permeable base transistors for microwave power applications 297
Triggering of guiding and antiguiding effects in GaN-based VCSELs 296
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties 294
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 285
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 284
Modeling challenges for high-efficiency visible light-emitting diodes 283
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 280
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 269
A reduced-order technique for the acceleration of electronic structure calculations 269
Many-valley electron transport in AlGaAs VCSELs 268
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 266
Numerical study of ZnO-based LEDs 262
A Closed-Form CAD-Oriented Model for the High-Frequency Conductor Attenuation of Symmetrical Coupled Coplanar Waveguides 260
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 259
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook 258
Numerical analysis of indirect Auger transitions in InGaN 256
Design of High Power Low Noise Polarization Insensitive Ridge Waveguide Laser Amplifiers 253
Auger recombination in bulk InGaN and quantum wells: a numerical simulation study 253
Full-band Monte Carlo simulation of HgCdTe APDs 252
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 252
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 252
Theory of high field carrier transport and impact ionization in ZnO 252
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation 250
Physics Based Modeling of Submicron GaN Permeable Base Transistors 247
Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes 246
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium 246
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 245
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications 243
Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D 242
Algorithm 745. Computation of the complete and incomplete Fermi-Dirac integral 240
VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator 240
Full-band Monte Carlo simulation of HgCdTe APDs 237
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study 236
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 234
A novel reduced-order model for full-wave waveguide analysis 234
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach 233
Optical Properties of III-Nitride Ternary Compounds 232
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section 232
Exact, conformal-mapping models for the high-frequency losses of coplanar waveguides with thick electrodes of rectangular or trapezoidal cross section 231
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 231
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells 230
The Influence of Ground Plane Width on the Ohmic Losses of Coplanar Waveguides With Finite Lateral Ground Planes 229
Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model 229
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 228
Microwave modeling and characterization of thick coplanar waveguides on oxide-coated Lithium Niobate substrates for electro-optical applications 226
A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications 225
A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures 224
Auger transitions and their signatures in III-nitride LEDs: a full-band modeling 223
Design of High-power Ridge Waveguide 980-nm Pump Lasers 220
Series expansion of the Fermi-Dirac integral F_j(x) over the entire domain of real j and x 220
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 220
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe 220
Accurate and efficient numerical quasi-TEM modeling of coplanarwaveguides for high-speed electro-optic modulators 219
Fast, reduced order full-wave FEM analysis of broadband traveling-wave electrooptical modulators 217
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 217
Capture and escape in quantum wells as scattering events in Monte Carlo simulation 216
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 216
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 216
Thermal lensing effects on lateral leakage in GaN-based vertical-cavity surface-emitting laser cavities 215
Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO 212
Fast higher-order full-wave FEM analysis of traveling-wave optoelectronic devices 210
Progress and challenges in electrically pumped GaN-based VCSELs 209
Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation 207
Ab initio, nonlocal pseudopotential, and full-zone k*p computation of the electronic structure of wurtzite BeO 207
Microwave modeling and characterization of thick coplanar waveguides on oxide-coated Lithium Niobate substrates for electro-optical applications 207
Auger lifetime in narrow gap semiconductors 206
Simulazione e progetto termico di transistori eMMIC di potenza su semiconduttori composti per applicazioni spaziali 205
Simulazione e progetto termico di transistori e MMIC di potenza su semiconduttori composti per applicazioni spaziali 205
Electronic and optical properties of ZnO/MgZnO and ZnO/BeZnO quantum wells 204
Monte Carlo Simulation of Electron Transport in theIII-Nitride Wurtzite Phase Materials System: Binaries andTernaries 203
Direction-dependent band nonparabolicity effects on high-field electron transport in GaN 202
Totale 27.648
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Categoria #
all - tutte 118.700
article - articoli 65.578
book - libri 573
conference - conferenze 50.924
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.625
Totale 237.400
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20212.136 0 0 167 315 147 256 162 163 248 355 190 133
2021/20222.800 192 204 99 250 202 174 82 106 262 205 449 575
2022/20233.729 330 599 74 338 518 479 350 138 346 50 186 321
2023/20241.421 75 145 60 101 82 109 71 86 107 107 258 220
2024/20255.364 114 929 340 537 518 301 338 284 796 308 368 531
2025/20262.228 684 653 891 0 0 0 0 0 0 0 0 0
Totale 41.075