PORTO @ Archivio Istituzionale della Ricerca

GOANO, MICHELE
 Distribuzione geografica
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Continente #
NA - Nord America 17.308
EU - Europa 15.469
AS - Asia 5.198
SA - Sud America 578
AF - Africa 105
Continente sconosciuto - Info sul continente non disponibili 12
OC - Oceania 9
Totale 38.679
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Nazione #
US - Stati Uniti d'America 17.149
IT - Italia 3.435
GB - Regno Unito 3.116
DE - Germania 2.729
FR - Francia 2.414
CN - Cina 1.942
SG - Singapore 1.609
UA - Ucraina 854
RU - Federazione Russa 583
BR - Brasile 521
KR - Corea 440
NL - Olanda 403
TR - Turchia 398
IE - Irlanda 391
SE - Svezia 322
CH - Svizzera 284
AT - Austria 240
FI - Finlandia 215
BE - Belgio 168
HK - Hong Kong 141
IN - India 132
CA - Canada 129
MY - Malesia 102
ID - Indonesia 83
JP - Giappone 76
EU - Europa 44
IR - Iran 42
SN - Senegal 35
ES - Italia 33
BG - Bulgaria 31
PL - Polonia 31
RO - Romania 27
TW - Taiwan 26
VN - Vietnam 26
AP - ???statistics.table.value.countryCode.AP??? 25
AE - Emirati Arabi Uniti 24
IL - Israele 24
PK - Pakistan 24
BD - Bangladesh 20
NO - Norvegia 19
MX - Messico 17
IQ - Iraq 16
LT - Lituania 16
EE - Estonia 14
SA - Arabia Saudita 14
ZA - Sudafrica 14
CZ - Repubblica Ceca 13
DZ - Algeria 13
DK - Danimarca 12
KE - Kenya 12
HR - Croazia 11
PT - Portogallo 11
UZ - Uzbekistan 11
CL - Cile 10
AR - Argentina 9
AU - Australia 9
GH - Ghana 9
CO - Colombia 8
EC - Ecuador 8
JO - Giordania 8
KZ - Kazakistan 8
GR - Grecia 7
BY - Bielorussia 6
MA - Marocco 6
PE - Perù 6
PY - Paraguay 6
AZ - Azerbaigian 5
NP - Nepal 5
HU - Ungheria 4
LU - Lussemburgo 4
PH - Filippine 4
TH - Thailandia 4
VE - Venezuela 4
AM - Armenia 3
BO - Bolivia 3
CI - Costa d'Avorio 3
DO - Repubblica Dominicana 3
EG - Egitto 3
NG - Nigeria 3
PS - Palestinian Territory 3
SI - Slovenia 3
TN - Tunisia 3
AL - Albania 2
CR - Costa Rica 2
JM - Giamaica 2
KG - Kirghizistan 2
LV - Lettonia 2
NI - Nicaragua 2
RS - Serbia 2
SC - Seychelles 2
SK - Slovacchia (Repubblica Slovacca) 2
SY - Repubblica araba siriana 2
UY - Uruguay 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BB - Barbados 1
BH - Bahrain 1
BS - Bahamas 1
ET - Etiopia 1
GE - Georgia 1
GY - Guiana 1
Totale 38.667
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Città #
Ashburn 3.952
Southend 2.789
Seattle 1.838
Fairfield 1.258
Chandler 998
Singapore 833
Turin 805
Beijing 743
Princeton 609
Woodbridge 607
Houston 604
Ann Arbor 550
Santa Clara 549
Cambridge 543
Boardman 514
Jacksonville 457
Wilmington 453
Berlin 406
Torino 391
Dublin 350
San Ramon 311
Izmir 302
Bern 251
Council Bluffs 188
Saint Petersburg 181
Chicago 162
Milan 160
Helsinki 159
Vienna 157
Des Moines 155
Brussels 154
San Donato Milanese 154
Zhengzhou 152
Shanghai 138
Zaporozhye 116
Seoul 113
Pennsylvania Furnace 108
Baltimore 104
Frankfurt 99
Bologna 95
Overberg 90
Amsterdam 88
Jakarta 83
Fremont 82
Bremen 76
Shenzhen 76
San Francisco 75
Hangzhou 74
Guangzhou 70
Hong Kong 68
Mountain View 65
Rome 64
Munich 61
Buffalo 56
Monopoli 56
Redwood City 55
Padua 51
Paris 51
Toronto 50
Washington 49
Nuremberg 47
Piscataway 45
São Paulo 45
Valfenera 44
Herkenbosch 43
San Diego 43
Istanbul 42
Los Angeles 42
Hefei 38
Overland Park 36
Menlo Park 34
San Jose 34
Norwalk 33
Lappeenranta 32
London 32
Columbus 30
Sofia 29
Wenzhou 28
Yubileyny 27
New York 26
Frankfurt am Main 24
Melun 24
St Petersburg 24
Guiyang 23
Lecce 23
Moscow 23
Tokyo 23
Rio de Janeiro 22
Andover 21
Atlanta 21
Durgapur 21
Jamaica Plain 20
Redmond 20
Turku 20
Abu Dhabi 19
Dallas 18
Taipei 18
Hanoi 17
Kiev 17
Miami 17
Totale 24.993
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Nome #
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 593
Theoretical investigation of BeZnO-based UV LEDs 538
Broad Band Coaxial Directional Couplers for High Power Applications 406
Alloy scattering in AlGaN and InGaN: A numerical study 405
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 403
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 402
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 394
Conformal Mapping Design Tools for Coaxial Couplers with Complex Cross Section 382
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 380
Role of defects in the thermal droop of InGaN-based light emitting diodes 370
Simplex algorithm for band structure calculation of noncubic symmetry semiconductors: Application to III-nitride binaries and alloys 368
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations 365
Revisiting the partial-capacitance approach to the analysis of coplanar transmission lines on multilayered substrates 361
Monte Carlo calculation of the electron capture time in single quantum wells 355
An accurate dual-expansion-point full-Brillouin-zone k center dot p model for wurtzite semiconductors 354
Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN 346
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part II. Ternaryalloys AlGaN, InGaN, and AlInN 335
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part I. Binarycompounds GaN, AlN, and InN 335
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 333
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 328
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 318
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 312
Numerical modeling of hole interband tunneling in wurtzite GaN and SiC 311
Analysis and design criteria of three-section DBR tunable lasers 305
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 304
DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS 297
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 297
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 296
A numerical study of Auger recombination in bulk InGaN 296
Theoretical investigation of GaN permeable base transistors for microwave power applications 290
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties 285
Triggering of guiding and antiguiding effects in GaN-based VCSELs 284
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 276
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 274
Modeling challenges for high-efficiency visible light-emitting diodes 273
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 269
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 266
A reduced-order technique for the acceleration of electronic structure calculations 263
Many-valley electron transport in AlGaAs VCSELs 260
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 256
Numerical study of ZnO-based LEDs 256
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook 254
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 253
A Closed-Form CAD-Oriented Model for the High-Frequency Conductor Attenuation of Symmetrical Coupled Coplanar Waveguides 250
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 247
Full-band Monte Carlo simulation of HgCdTe APDs 246
Design of High Power Low Noise Polarization Insensitive Ridge Waveguide Laser Amplifiers 246
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 246
Auger recombination in bulk InGaN and quantum wells: a numerical simulation study 243
Theory of high field carrier transport and impact ionization in ZnO 243
Numerical analysis of indirect Auger transitions in InGaN 243
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation 241
Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes 238
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium 238
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications 236
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 236
Algorithm 745. Computation of the complete and incomplete Fermi-Dirac integral 234
Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D 234
Physics Based Modeling of Submicron GaN Permeable Base Transistors 233
Full-band Monte Carlo simulation of HgCdTe APDs 232
A novel reduced-order model for full-wave waveguide analysis 231
Optical Properties of III-Nitride Ternary Compounds 230
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section 230
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 227
The Influence of Ground Plane Width on the Ohmic Losses of Coplanar Waveguides With Finite Lateral Ground Planes 224
Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model 222
Exact, conformal-mapping models for the high-frequency losses of coplanar waveguides with thick electrodes of rectangular or trapezoidal cross section 222
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 222
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells 220
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 220
Microwave modeling and characterization of thick coplanar waveguides on oxide-coated Lithium Niobate substrates for electro-optical applications 219
Series expansion of the Fermi-Dirac integral F_j(x) over the entire domain of real j and x 219
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study 219
VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator 219
A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications 218
A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures 215
Auger transitions and their signatures in III-nitride LEDs: a full-band modeling 215
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe 215
Design of High-power Ridge Waveguide 980-nm Pump Lasers 213
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 213
Capture and escape in quantum wells as scattering events in Monte Carlo simulation 213
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 213
Fast, reduced order full-wave FEM analysis of broadband traveling-wave electrooptical modulators 212
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 210
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 210
Accurate and efficient numerical quasi-TEM modeling of coplanarwaveguides for high-speed electro-optic modulators 209
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach 207
Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO 206
Thermal lensing effects on lateral leakage in GaN-based vertical-cavity surface-emitting laser cavities 205
Simulazione e progetto termico di transistori e MMIC di potenza su semiconduttori composti per applicazioni spaziali 202
Fast higher-order full-wave FEM analysis of traveling-wave optoelectronic devices 202
Progress and challenges in electrically pumped GaN-based VCSELs 202
Microwave modeling and characterization of thick coplanar waveguides on oxide-coated Lithium Niobate substrates for electro-optical applications 201
Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation 200
Direction-dependent band nonparabolicity effects on high-field electron transport in GaN 200
Ab initio, nonlocal pseudopotential, and full-zone k*p computation of the electronic structure of wurtzite BeO 198
Auger lifetime in narrow gap semiconductors 198
Memory-efficient technique for inclusion of carrier degeneracy in Monte Carlo transport simulation 194
Ab initio electron-phonon interactions for high-field transport simulation in ZnO 192
Experimental electron mobility in ZnO: a reassessment through Monte Carlo simulation 192
Totale 26.813
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Categoria #
all - tutte 112.002
article - articoli 62.010
book - libri 556
conference - conferenze 47.896
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.540
Totale 224.004
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20212.872 347 389 167 315 147 256 162 163 248 355 190 133
2021/20222.800 192 204 99 250 202 174 82 106 262 205 449 575
2022/20233.729 330 599 74 338 518 479 350 138 346 50 186 321
2023/20241.421 75 145 60 101 82 109 71 86 107 107 258 220
2024/20255.364 114 929 340 537 518 301 338 284 796 308 368 531
2025/2026233 233 0 0 0 0 0 0 0 0 0 0 0
Totale 39.080