PORTO @ Archivio Istituzionale della Ricerca

GOANO, MICHELE
 Distribuzione geografica
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Continente #
NA - Nord America 18.455
EU - Europa 15.800
AS - Asia 8.111
SA - Sud America 961
AF - Africa 147
Continente sconosciuto - Info sul continente non disponibili 13
OC - Oceania 11
Totale 43.498
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Nazione #
US - Stati Uniti d'America 18.237
IT - Italia 3.576
GB - Regno Unito 3.137
SG - Singapore 3.050
DE - Germania 2.757
CN - Cina 2.752
FR - Francia 2.458
UA - Ucraina 861
BR - Brasile 792
KR - Corea 600
RU - Federazione Russa 591
NL - Olanda 410
TR - Turchia 408
IE - Irlanda 394
SE - Svezia 327
CH - Svizzera 286
VN - Vietnam 247
FI - Finlandia 243
AT - Austria 241
HK - Hong Kong 231
BE - Belgio 168
IN - India 155
CA - Canada 149
ID - Indonesia 106
MY - Malesia 105
JP - Giappone 98
AR - Argentina 54
ES - Italia 47
EU - Europa 44
IR - Iran 44
PL - Polonia 43
MX - Messico 42
BD - Bangladesh 39
SN - Senegal 38
IQ - Iraq 34
PK - Pakistan 34
BG - Bulgaria 32
RO - Romania 28
TW - Taiwan 28
AE - Emirati Arabi Uniti 27
EC - Ecuador 26
AP - ???statistics.table.value.countryCode.AP??? 25
IL - Israele 24
ZA - Sudafrica 24
CL - Cile 20
CO - Colombia 19
NO - Norvegia 19
KE - Kenya 18
SA - Arabia Saudita 18
UZ - Uzbekistan 18
LT - Lituania 16
DZ - Algeria 15
EE - Estonia 14
JO - Giordania 14
PY - Paraguay 14
VE - Venezuela 14
CZ - Repubblica Ceca 13
DK - Danimarca 12
MA - Marocco 12
NP - Nepal 12
AU - Australia 11
HR - Croazia 11
KZ - Kazakistan 11
PT - Portogallo 11
EG - Egitto 10
AZ - Azerbaigian 9
GH - Ghana 9
DO - Repubblica Dominicana 8
PE - Perù 8
PH - Filippine 8
BO - Bolivia 7
BY - Bielorussia 7
GR - Grecia 7
TN - Tunisia 7
HU - Ungheria 6
AM - Armenia 5
UY - Uruguay 5
AL - Albania 4
GE - Georgia 4
JM - Giamaica 4
KG - Kirghizistan 4
LU - Lussemburgo 4
PS - Palestinian Territory 4
SI - Slovenia 4
TH - Thailandia 4
BB - Barbados 3
BH - Bahrain 3
CI - Costa d'Avorio 3
KW - Kuwait 3
LB - Libano 3
LV - Lettonia 3
NG - Nigeria 3
NI - Nicaragua 3
OM - Oman 3
QA - Qatar 3
SY - Repubblica araba siriana 3
CR - Costa Rica 2
HN - Honduras 2
KH - Cambogia 2
RS - Serbia 2
Totale 43.473
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Città #
Ashburn 4.259
Southend 2.789
Seattle 1.841
Singapore 1.641
Fairfield 1.258
Chandler 998
Beijing 942
Turin 853
Princeton 609
Woodbridge 607
Houston 606
Santa Clara 561
Ann Arbor 550
Cambridge 543
Boardman 514
Jacksonville 457
Wilmington 453
Berlin 406
Torino 391
Dublin 352
San Ramon 311
Izmir 303
Dallas 259
Seoul 253
Bern 251
Council Bluffs 196
Saint Petersburg 181
Milan 177
Chicago 165
Helsinki 160
Hong Kong 158
Zhengzhou 158
Vienna 157
Des Moines 155
Brussels 154
San Donato Milanese 154
Shanghai 148
Buffalo 147
Hefei 137
Los Angeles 135
North Bergen 134
Zaporozhye 116
Pennsylvania Furnace 108
Baltimore 104
Frankfurt 99
Bologna 97
Amsterdam 91
Overberg 90
Jakarta 85
Fremont 82
Ho Chi Minh City 82
Guangzhou 81
Hangzhou 77
Shenzhen 77
Bremen 76
San Francisco 76
Rome 71
Hanoi 67
São Paulo 67
Mountain View 65
Munich 62
Monopoli 56
Redwood City 55
Lappeenranta 53
Padua 52
Paris 52
Toronto 51
Washington 49
Nuremberg 48
Frankfurt am Main 46
Piscataway 45
San Jose 45
New York 44
Valfenera 44
Herkenbosch 43
Istanbul 43
San Diego 43
Tokyo 42
Overland Park 36
London 35
Menlo Park 34
Norwalk 33
Columbus 30
Sofia 29
Wenzhou 29
Yubileyny 27
Rio de Janeiro 26
St Petersburg 25
Turku 25
Atlanta 24
Melun 24
Moscow 24
Guiyang 23
Lecce 23
Andover 21
Durgapur 21
Jamaica Plain 20
Kunming 20
Phoenix 20
Redmond 20
Totale 27.576
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Nome #
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 630
Theoretical investigation of BeZnO-based UV LEDs 558
Alloy scattering in AlGaN and InGaN: A numerical study 440
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 439
Broad Band Coaxial Directional Couplers for High Power Applications 430
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 430
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 422
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 422
Conformal Mapping Design Tools for Coaxial Couplers with Complex Cross Section 410
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations 397
Role of defects in the thermal droop of InGaN-based light emitting diodes 392
Simplex algorithm for band structure calculation of noncubic symmetry semiconductors: Application to III-nitride binaries and alloys 388
Monte Carlo calculation of the electron capture time in single quantum wells 373
Revisiting the partial-capacitance approach to the analysis of coplanar transmission lines on multilayered substrates 373
An accurate dual-expansion-point full-Brillouin-zone k center dot p model for wurtzite semiconductors 369
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part II. Ternaryalloys AlGaN, InGaN, and AlInN 366
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part I. Binarycompounds GaN, AlN, and InN 363
Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN 361
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 356
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 348
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 341
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 332
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 324
Analysis and design criteria of three-section DBR tunable lasers 324
Numerical modeling of hole interband tunneling in wurtzite GaN and SiC 323
A numerical study of Auger recombination in bulk InGaN 323
DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS 321
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 319
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 315
Theoretical investigation of GaN permeable base transistors for microwave power applications 305
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties 305
Triggering of guiding and antiguiding effects in GaN-based VCSELs 305
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 304
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 301
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 293
Modeling challenges for high-efficiency visible light-emitting diodes 290
A reduced-order technique for the acceleration of electronic structure calculations 284
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 281
Many-valley electron transport in AlGaAs VCSELs 281
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 275
Physics Based Modeling of Submicron GaN Permeable Base Transistors 274
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 273
Auger recombination in bulk InGaN and quantum wells: a numerical simulation study 273
Numerical study of ZnO-based LEDs 273
Numerical analysis of indirect Auger transitions in InGaN 271
A Closed-Form CAD-Oriented Model for the High-Frequency Conductor Attenuation of Symmetrical Coupled Coplanar Waveguides 269
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook 266
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 266
Design of High Power Low Noise Polarization Insensitive Ridge Waveguide Laser Amplifiers 265
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 265
Theory of high field carrier transport and impact ionization in ZnO 265
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study 264
Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes 263
Full-band Monte Carlo simulation of HgCdTe APDs 262
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 260
VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator 259
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation 258
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium 258
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach 255
Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D 254
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications 253
Algorithm 745. Computation of the complete and incomplete Fermi-Dirac integral 246
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 246
Full-band Monte Carlo simulation of HgCdTe APDs 245
A novel reduced-order model for full-wave waveguide analysis 244
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells 243
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 241
Exact, conformal-mapping models for the high-frequency losses of coplanar waveguides with thick electrodes of rectangular or trapezoidal cross section 240
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 240
The Influence of Ground Plane Width on the Ohmic Losses of Coplanar Waveguides With Finite Lateral Ground Planes 239
Optical Properties of III-Nitride Ternary Compounds 239
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section 239
Microwave modeling and characterization of thick coplanar waveguides on oxide-coated Lithium Niobate substrates for electro-optical applications 238
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe 238
Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model 237
A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications 236
A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures 235
Auger transitions and their signatures in III-nitride LEDs: a full-band modeling 234
Series expansion of the Fermi-Dirac integral F_j(x) over the entire domain of real j and x 233
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 231
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 229
Design of High-power Ridge Waveguide 980-nm Pump Lasers 227
Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO 227
Accurate and efficient numerical quasi-TEM modeling of coplanarwaveguides for high-speed electro-optic modulators 226
Thermal lensing effects on lateral leakage in GaN-based vertical-cavity surface-emitting laser cavities 225
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 224
Monte Carlo Simulation of Electron Transport in theIII-Nitride Wurtzite Phase Materials System: Binaries andTernaries 224
Fast, reduced order full-wave FEM analysis of broadband traveling-wave electrooptical modulators 223
Capture and escape in quantum wells as scattering events in Monte Carlo simulation 223
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 221
Simulazione e progetto termico di transistori eMMIC di potenza su semiconduttori composti per applicazioni spaziali 220
Simulation of carrier transport in wide band gap semiconductors 220
Ab initio, nonlocal pseudopotential, and full-zone k*p computation of the electronic structure of wurtzite BeO 219
Simulazione e progetto termico di transistori e MMIC di potenza su semiconduttori composti per applicazioni spaziali 218
Fast higher-order full-wave FEM analysis of traveling-wave optoelectronic devices 218
Electronic and optical properties of ZnO/MgZnO and ZnO/BeZnO quantum wells 217
Progress and challenges in electrically pumped GaN-based VCSELs 217
Microwave modeling and characterization of thick coplanar waveguides on oxide-coated Lithium Niobate substrates for electro-optical applications 215
Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation 214
Auger lifetime in narrow gap semiconductors 211
Totale 28.921
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Categoria #
all - tutte 126.946
article - articoli 69.940
book - libri 599
conference - conferenze 54.659
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.748
Totale 253.892
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.507 0 0 0 0 0 256 162 163 248 355 190 133
2021/20222.800 192 204 99 250 202 174 82 106 262 205 449 575
2022/20233.729 330 599 74 338 518 479 350 138 346 50 186 321
2023/20241.421 75 145 60 101 82 109 71 86 107 107 258 220
2024/20255.364 114 929 340 537 518 301 338 284 796 308 368 531
2025/20265.070 684 653 892 1.157 903 781 0 0 0 0 0 0
Totale 43.917