PORTO @ Archivio Istituzionale della Ricerca

GOANO, MICHELE
 Distribuzione geografica
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Continente #
NA - Nord America 21.322
EU - Europa 17.607
AS - Asia 12.943
SA - Sud America 1.102
Continente sconosciuto - Info sul continente non disponibili 433
AF - Africa 197
OC - Oceania 15
Totale 53.619
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Nazione #
US - Stati Uniti d'America 20.967
IT - Italia 4.097
SG - Singapore 3.709
GB - Regno Unito 3.168
CN - Cina 2.869
VN - Vietnam 2.867
DE - Germania 2.801
FR - Francia 2.657
RU - Federazione Russa 1.405
BR - Brasile 868
UA - Ucraina 867
KR - Corea 781
HK - Hong Kong 669
NL - Olanda 458
TR - Turchia 411
IE - Irlanda 398
IN - India 385
SE - Svezia 362
CH - Svizzera 303
FI - Finlandia 264
BD - Bangladesh 252
AT - Austria 247
CA - Canada 207
BE - Belgio 171
JP - Giappone 145
ID - Indonesia 114
MY - Malesia 113
PH - Filippine 103
TW - Taiwan 84
TH - Thailandia 75
IQ - Iraq 69
AR - Argentina 65
ES - Italia 62
MX - Messico 60
PL - Polonia 52
PK - Pakistan 48
EU - Europa 44
IR - Iran 44
EC - Ecuador 40
SN - Senegal 39
BG - Bulgaria 33
CO - Colombia 33
AE - Emirati Arabi Uniti 31
RO - Romania 31
CL - Cile 30
ZA - Sudafrica 30
MA - Marocco 28
AP - ???statistics.table.value.countryCode.AP??? 25
IL - Israele 25
KE - Kenya 25
VE - Venezuela 24
SA - Arabia Saudita 22
JO - Giordania 21
NO - Norvegia 19
DZ - Algeria 18
JM - Giamaica 18
UZ - Uzbekistan 18
LT - Lituania 17
NP - Nepal 16
AU - Australia 15
CZ - Repubblica Ceca 15
PT - Portogallo 15
EE - Estonia 14
PY - Paraguay 14
TN - Tunisia 14
HR - Croazia 13
DK - Danimarca 12
KZ - Kazakistan 12
BO - Bolivia 11
DO - Repubblica Dominicana 11
EG - Egitto 11
AZ - Azerbaigian 10
CR - Costa Rica 10
HN - Honduras 10
PE - Perù 10
BY - Bielorussia 9
GH - Ghana 9
GT - Guatemala 9
GR - Grecia 8
HU - Ungheria 8
AL - Albania 7
SI - Slovenia 7
TT - Trinidad e Tobago 7
AM - Armenia 6
GE - Georgia 6
KG - Kirghizistan 6
RS - Serbia 6
LB - Libano 5
NG - Nigeria 5
OM - Oman 5
PS - Palestinian Territory 5
SV - El Salvador 5
SY - Repubblica araba siriana 5
UY - Uruguay 5
BB - Barbados 4
CI - Costa d'Avorio 4
LU - Lussemburgo 4
NI - Nicaragua 4
PR - Porto Rico 4
QA - Qatar 4
Totale 53.148
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Città #
Ashburn 4.575
Southend 2.789
Singapore 2.027
Seattle 1.845
Fairfield 1.258
San Jose 1.137
Chandler 998
Beijing 957
Turin 910
Ho Chi Minh City 758
Hanoi 685
Santa Clara 628
Houston 612
Princeton 609
Woodbridge 607
Ann Arbor 550
Cambridge 544
Boardman 520
Hong Kong 515
Jacksonville 458
Wilmington 456
Berlin 411
Torino 391
Council Bluffs 381
Seoul 373
Dublin 353
Milan 347
Los Angeles 342
San Ramon 311
Izmir 303
Dallas 283
Bern 251
Lauterbourg 190
Saint Petersburg 181
Helsinki 178
Chicago 176
Buffalo 160
Vienna 159
Des Moines 158
Rome 158
Zhengzhou 158
Brussels 156
Shanghai 156
San Donato Milanese 154
North Bergen 138
Hefei 137
Da Nang 131
Zaporozhye 116
Baltimore 111
Pennsylvania Furnace 108
New York 105
Bologna 103
Haiphong 101
Amsterdam 99
Frankfurt 99
Overberg 90
Moscow 89
Jakarta 85
Guangzhou 84
Fremont 82
São Paulo 82
Shenzhen 79
San Francisco 78
Hangzhou 77
Bremen 76
Frankfurt am Main 66
Mountain View 65
Toronto 63
Munich 62
Tokyo 60
Paris 57
Monopoli 56
Lappeenranta 55
Padua 55
Redwood City 55
Nuremberg 54
Washington 53
Piscataway 52
San Diego 46
Istanbul 45
Valfenera 44
Herkenbosch 43
The Dalles 43
Columbus 42
Groningen 42
London 41
Figino 40
Phoenix 40
Hải Dương 36
Norwalk 36
Overland Park 36
Bangkok 35
Menlo Park 34
Atlanta 32
Nha Trang 31
Zurich 31
Biên Hòa 30
Rio de Janeiro 30
Sofia 30
Orem 29
Totale 32.807
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Nome #
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 715
Theoretical investigation of BeZnO-based UV LEDs 598
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 512
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations 497
Alloy scattering in AlGaN and InGaN: A numerical study 492
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 474
Broad Band Coaxial Directional Couplers for High Power Applications 473
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 469
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 467
Conformal Mapping Design Tools for Coaxial Couplers with Complex Cross Section 463
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part I. Binarycompounds GaN, AlN, and InN 450
Role of defects in the thermal droop of InGaN-based light emitting diodes 448
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part II. Ternaryalloys AlGaN, InGaN, and AlInN 443
Simplex algorithm for band structure calculation of noncubic symmetry semiconductors: Application to III-nitride binaries and alloys 428
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 417
Revisiting the partial-capacitance approach to the analysis of coplanar transmission lines on multilayered substrates 409
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 406
An accurate dual-expansion-point full-Brillouin-zone k center dot p model for wurtzite semiconductors 403
Monte Carlo calculation of the electron capture time in single quantum wells 401
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 392
Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN 390
A numerical study of Auger recombination in bulk InGaN 389
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 383
DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS 373
Modeling challenges for high-efficiency visible light-emitting diodes 370
Numerical modeling of hole interband tunneling in wurtzite GaN and SiC 367
Theoretical investigation of GaN permeable base transistors for microwave power applications 367
Analysis and design criteria of three-section DBR tunable lasers 361
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 359
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 358
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach 352
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 346
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 346
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 344
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties 344
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 338
Triggering of guiding and antiguiding effects in GaN-based VCSELs 335
Many-valley electron transport in AlGaAs VCSELs 333
VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator 333
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 328
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 327
A reduced-order technique for the acceleration of electronic structure calculations 324
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation 323
Numerical analysis of indirect Auger transitions in InGaN 323
Algorithm 745. Computation of the complete and incomplete Fermi-Dirac integral 317
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 316
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 314
Numerical study of ZnO-based LEDs 310
Series expansion of the Fermi-Dirac integral F_j(x) over the entire domain of real j and x 309
Physics Based Modeling of Submicron GaN Permeable Base Transistors 308
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 306
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study 306
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications 304
Design of High Power Low Noise Polarization Insensitive Ridge Waveguide Laser Amplifiers 301
Auger recombination in bulk InGaN and quantum wells: a numerical simulation study 301
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium 301
TCAD-Assisted Progress on the Cisco Platform Toward Low-Bias 200 Gbit/s vertical-pin Ge- on-Si Waveguide Photodetectors 300
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 299
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 299
A Closed-Form CAD-Oriented Model for the High-Frequency Conductor Attenuation of Symmetrical Coupled Coplanar Waveguides 299
Theory of high field carrier transport and impact ionization in ZnO 299
Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes 298
Full-band Monte Carlo simulation of HgCdTe APDs 296
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook 289
Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D 289
A novel reduced-order model for full-wave waveguide analysis 287
Monte Carlo Simulation of Electron Transport in theIII-Nitride Wurtzite Phase Materials System: Binaries andTernaries 284
The Influence of Ground Plane Width on the Ohmic Losses of Coplanar Waveguides With Finite Lateral Ground Planes 282
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells 280
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 280
Full-band Monte Carlo simulation of HgCdTe APDs 279
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 275
Optical Properties of III-Nitride Ternary Compounds 274
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section 270
A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures 270
Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model 267
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe 266
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 266
Simulazione e progetto termico di transistori eMMIC di potenza su semiconduttori composti per applicazioni spaziali 265
Microwave modeling and characterization of thick coplanar waveguides on oxide-coated Lithium Niobate substrates for electro-optical applications 263
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 263
Auger transitions and their signatures in III-nitride LEDs: a full-band modeling 262
Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO 261
Exact, conformal-mapping models for the high-frequency losses of coplanar waveguides with thick electrodes of rectangular or trapezoidal cross section 259
Modeling Infrared Superlattice Photodetectors: From Nonequilibrium Green’s Functions to Quantum-Corrected Drift Diffusion 259
Thermal lensing effects on lateral leakage in GaN-based vertical-cavity surface-emitting laser cavities 257
Nonequilibrium Green’s Function Modeling of type-II Superlattice Detectors and its Connection to Semiclassical Approaches 257
Ab initio, nonlocal pseudopotential, and full-zone k*p computation of the electronic structure of wurtzite BeO 256
Accurate and efficient numerical quasi-TEM modeling of coplanarwaveguides for high-speed electro-optic modulators 255
Design of High-power Ridge Waveguide 980-nm Pump Lasers 255
Physics-based design of III-nitride and ZnO LEDs: from material properties to device optimization 255
A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications 253
Electronic and optical properties of ZnO/MgZnO and ZnO/BeZnO quantum wells 251
Simulazione e progetto termico di transistori e MMIC di potenza su semiconduttori composti per applicazioni spaziali 250
Fast, reduced order full-wave FEM analysis of broadband traveling-wave electrooptical modulators 250
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 249
Analysis and Design of Plasmonic-Organic Hybrid Electro-Optic Modulators Based on Directional Couplers 249
Simulation of carrier transport in wide band gap semiconductors 248
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 247
Electron Transport 247
Totale 33.322
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Categoria #
all - tutte 149.077
article - articoli 81.904
book - libri 699
conference - conferenze 64.452
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.022
Totale 298.154
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.404 0 0 99 250 202 174 82 106 262 205 449 575
2022/20233.729 330 599 74 338 518 479 350 138 346 50 186 321
2023/20241.421 75 145 60 101 82 109 71 86 107 107 258 220
2024/20255.364 114 929 340 537 518 301 338 284 796 308 368 531
2025/202613.800 684 653 892 1.157 903 857 2.113 995 3.089 1.233 363 861
2026/2027972 474 335 163 0 0 0 0 0 0 0 0 0
Totale 53.619