PORTO @ Archivio Istituzionale della Ricerca

GOANO, MICHELE
 Distribuzione geografica
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Continente #
NA - Nord America 20.138
EU - Europa 17.121
AS - Asia 12.611
SA - Sud America 1.054
AF - Africa 196
OC - Oceania 15
Continente sconosciuto - Info sul continente non disponibili 13
Totale 51.148
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Nazione #
US - Stati Uniti d'America 19.884
IT - Italia 3.676
SG - Singapore 3.611
GB - Regno Unito 3.168
VN - Vietnam 2.859
CN - Cina 2.856
DE - Germania 2.795
FR - Francia 2.655
RU - Federazione Russa 1.405
UA - Ucraina 866
BR - Brasile 845
KR - Corea 781
HK - Hong Kong 660
NL - Olanda 455
TR - Turchia 411
IE - Irlanda 396
IN - India 382
SE - Svezia 332
CH - Svizzera 298
FI - Finlandia 262
AT - Austria 247
BE - Belgio 169
CA - Canada 166
JP - Giappone 141
ID - Indonesia 114
MY - Malesia 111
PH - Filippine 102
TW - Taiwan 80
TH - Thailandia 71
IQ - Iraq 69
BD - Bangladesh 68
AR - Argentina 62
ES - Italia 57
MX - Messico 52
PL - Polonia 50
PK - Pakistan 48
EU - Europa 44
IR - Iran 44
SN - Senegal 39
BG - Bulgaria 33
EC - Ecuador 33
AE - Emirati Arabi Uniti 31
RO - Romania 31
ZA - Sudafrica 30
CL - Cile 29
MA - Marocco 28
AP - ???statistics.table.value.countryCode.AP??? 25
CO - Colombia 25
IL - Israele 25
KE - Kenya 25
SA - Arabia Saudita 22
VE - Venezuela 22
JO - Giordania 21
NO - Norvegia 19
DZ - Algeria 18
UZ - Uzbekistan 18
LT - Lituania 17
NP - Nepal 16
AU - Australia 15
CZ - Repubblica Ceca 15
PT - Portogallo 15
EE - Estonia 14
PY - Paraguay 14
HR - Croazia 13
TN - Tunisia 13
DK - Danimarca 12
KZ - Kazakistan 12
EG - Egitto 11
AZ - Azerbaigian 10
DO - Repubblica Dominicana 10
BO - Bolivia 9
GH - Ghana 9
BY - Bielorussia 8
GR - Grecia 8
PE - Perù 8
AL - Albania 7
HU - Ungheria 7
SI - Slovenia 7
AM - Armenia 6
JM - Giamaica 6
KG - Kirghizistan 6
GE - Georgia 5
LB - Libano 5
NG - Nigeria 5
OM - Oman 5
PS - Palestinian Territory 5
RS - Serbia 5
SY - Repubblica araba siriana 5
UY - Uruguay 5
CI - Costa d'Avorio 4
LU - Lussemburgo 4
QA - Qatar 4
BB - Barbados 3
BH - Bahrain 3
CR - Costa Rica 3
HN - Honduras 3
KW - Kuwait 3
LV - Lettonia 3
NI - Nicaragua 3
SK - Slovacchia (Repubblica Slovacca) 3
Totale 51.110
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Città #
Ashburn 4.443
Southend 2.789
Singapore 2.021
Seattle 1.842
Fairfield 1.258
Chandler 998
Beijing 953
San Jose 922
Turin 880
Ho Chi Minh City 755
Hanoi 683
Princeton 609
Houston 607
Woodbridge 607
Santa Clara 577
Ann Arbor 550
Cambridge 544
Boardman 514
Hong Kong 514
Jacksonville 457
Wilmington 453
Berlin 408
Torino 391
Seoul 373
Dublin 353
Los Angeles 313
San Ramon 311
Izmir 303
Dallas 265
Bern 251
Council Bluffs 242
Milan 193
Lauterbourg 190
Saint Petersburg 181
Helsinki 177
Chicago 167
Vienna 159
Zhengzhou 158
Des Moines 157
Brussels 155
San Donato Milanese 154
Shanghai 153
Buffalo 152
North Bergen 138
Hefei 137
Da Nang 130
Zaporozhye 116
Pennsylvania Furnace 108
Baltimore 104
Haiphong 101
Frankfurt 99
Bologna 98
Amsterdam 97
Overberg 90
Moscow 89
Jakarta 85
Guangzhou 83
Fremont 82
São Paulo 81
Shenzhen 79
Hangzhou 77
San Francisco 77
Bremen 76
New York 76
Rome 75
Frankfurt am Main 66
Mountain View 65
Munich 62
Tokyo 58
Paris 57
Monopoli 56
Lappeenranta 55
Redwood City 55
Toronto 55
Nuremberg 54
Padua 54
Piscataway 49
Washington 49
Istanbul 45
San Diego 44
Valfenera 44
Herkenbosch 43
Groningen 42
Columbus 38
London 38
Hải Dương 36
Overland Park 36
The Dalles 35
Menlo Park 34
Bangkok 33
Norwalk 33
Biên Hòa 30
Nha Trang 30
Sofia 30
Atlanta 29
Orem 29
Thái Nguyên 29
Wenzhou 29
Rio de Janeiro 28
Taipei 27
Totale 31.777
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Nome #
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 690
Theoretical investigation of BeZnO-based UV LEDs 586
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 489
Alloy scattering in AlGaN and InGaN: A numerical study 482
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations 468
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 464
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 463
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 459
Broad Band Coaxial Directional Couplers for High Power Applications 457
Conformal Mapping Design Tools for Coaxial Couplers with Complex Cross Section 445
Role of defects in the thermal droop of InGaN-based light emitting diodes 433
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part II. Ternaryalloys AlGaN, InGaN, and AlInN 423
Simplex algorithm for band structure calculation of noncubic symmetry semiconductors: Application to III-nitride binaries and alloys 420
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part I. Binarycompounds GaN, AlN, and InN 420
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 409
Revisiting the partial-capacitance approach to the analysis of coplanar transmission lines on multilayered substrates 400
Monte Carlo calculation of the electron capture time in single quantum wells 394
An accurate dual-expansion-point full-Brillouin-zone k center dot p model for wurtzite semiconductors 393
Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN 383
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 383
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 383
A numerical study of Auger recombination in bulk InGaN 380
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 378
Modeling challenges for high-efficiency visible light-emitting diodes 366
DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS 359
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 352
Analysis and design criteria of three-section DBR tunable lasers 349
Numerical modeling of hole interband tunneling in wurtzite GaN and SiC 345
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 345
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 342
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach 342
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties 340
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 339
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 338
Theoretical investigation of GaN permeable base transistors for microwave power applications 333
Triggering of guiding and antiguiding effects in GaN-based VCSELs 330
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 328
VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator 325
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 323
A reduced-order technique for the acceleration of electronic structure calculations 322
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 320
Many-valley electron transport in AlGaAs VCSELs 318
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation 317
Numerical analysis of indirect Auger transitions in InGaN 312
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 310
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 305
Numerical study of ZnO-based LEDs 302
Physics Based Modeling of Submicron GaN Permeable Base Transistors 300
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study 299
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 298
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications 298
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium 298
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 295
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 295
Design of High Power Low Noise Polarization Insensitive Ridge Waveguide Laser Amplifiers 295
Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes 294
Auger recombination in bulk InGaN and quantum wells: a numerical simulation study 294
Theory of high field carrier transport and impact ionization in ZnO 293
A Closed-Form CAD-Oriented Model for the High-Frequency Conductor Attenuation of Symmetrical Coupled Coplanar Waveguides 291
Full-band Monte Carlo simulation of HgCdTe APDs 287
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook 286
Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D 285
Algorithm 745. Computation of the complete and incomplete Fermi-Dirac integral 277
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 277
A novel reduced-order model for full-wave waveguide analysis 276
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells 275
Full-band Monte Carlo simulation of HgCdTe APDs 271
Monte Carlo Simulation of Electron Transport in theIII-Nitride Wurtzite Phase Materials System: Binaries andTernaries 271
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 269
The Influence of Ground Plane Width on the Ohmic Losses of Coplanar Waveguides With Finite Lateral Ground Planes 268
Optical Properties of III-Nitride Ternary Compounds 267
Series expansion of the Fermi-Dirac integral F_j(x) over the entire domain of real j and x 266
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 265
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section 264
A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures 264
Simulazione e progetto termico di transistori eMMIC di potenza su semiconduttori composti per applicazioni spaziali 261
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe 261
Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model 260
Auger transitions and their signatures in III-nitride LEDs: a full-band modeling 260
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 257
Microwave modeling and characterization of thick coplanar waveguides on oxide-coated Lithium Niobate substrates for electro-optical applications 254
Thermal lensing effects on lateral leakage in GaN-based vertical-cavity surface-emitting laser cavities 254
Exact, conformal-mapping models for the high-frequency losses of coplanar waveguides with thick electrodes of rectangular or trapezoidal cross section 253
Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO 251
Physics-based design of III-nitride and ZnO LEDs: from material properties to device optimization 250
Design of High-power Ridge Waveguide 980-nm Pump Lasers 248
A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications 248
Modeling Infrared Superlattice Photodetectors: From Nonequilibrium Green’s Functions to Quantum-Corrected Drift Diffusion 248
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 247
Accurate and efficient numerical quasi-TEM modeling of coplanarwaveguides for high-speed electro-optic modulators 246
Ab initio, nonlocal pseudopotential, and full-zone k*p computation of the electronic structure of wurtzite BeO 246
Simulazione e progetto termico di transistori e MMIC di potenza su semiconduttori composti per applicazioni spaziali 245
Electronic and optical properties of ZnO/MgZnO and ZnO/BeZnO quantum wells 245
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 245
Nonequilibrium Green’s Function Modeling of type-II Superlattice Detectors and its Connection to Semiclassical Approaches 245
Fast, reduced order full-wave FEM analysis of broadband traveling-wave electrooptical modulators 244
Simulation of carrier transport in wide band gap semiconductors 244
Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation 243
Electron Transport 243
Analysis and Design of Plasmonic-Organic Hybrid Electro-Optic Modulators Based on Directional Couplers 242
Totale 32.322
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Categoria #
all - tutte 138.547
article - articoli 76.082
book - libri 651
conference - conferenze 59.916
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.898
Totale 277.094
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021323 0 0 0 0 0 0 0 0 0 0 190 133
2021/20222.800 192 204 99 250 202 174 82 106 262 205 449 575
2022/20233.729 330 599 74 338 518 479 350 138 346 50 186 321
2023/20241.421 75 145 60 101 82 109 71 86 107 107 258 220
2024/20255.364 114 929 340 537 518 301 338 284 796 308 368 531
2025/202612.720 684 653 892 1.157 903 857 2.113 995 3.089 1.233 144 0
Totale 51.567