PORTO @ Archivio Istituzionale della Ricerca

GOANO, MICHELE
 Distribuzione geografica
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Continente #
NA - Nord America 20.792
EU - Europa 17.498
AS - Asia 12.809
SA - Sud America 1.089
AF - Africa 196
OC - Oceania 15
Continente sconosciuto - Info sul continente non disponibili 13
Totale 52.412
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Nazione #
US - Stati Uniti d'America 20.504
IT - Italia 4.026
SG - Singapore 3.676
GB - Regno Unito 3.168
CN - Cina 2.860
VN - Vietnam 2.859
DE - Germania 2.797
FR - Francia 2.656
RU - Federazione Russa 1.405
UA - Ucraina 867
BR - Brasile 865
KR - Corea 781
HK - Hong Kong 661
NL - Olanda 456
TR - Turchia 411
IE - Irlanda 398
IN - India 384
SE - Svezia 335
CH - Svizzera 303
FI - Finlandia 263
AT - Austria 247
BD - Bangladesh 187
CA - Canada 182
BE - Belgio 170
JP - Giappone 142
ID - Indonesia 114
MY - Malesia 111
PH - Filippine 103
TW - Taiwan 84
TH - Thailandia 71
IQ - Iraq 69
AR - Argentina 65
ES - Italia 62
MX - Messico 54
PL - Polonia 51
PK - Pakistan 48
EU - Europa 44
IR - Iran 44
SN - Senegal 39
EC - Ecuador 37
BG - Bulgaria 33
AE - Emirati Arabi Uniti 31
RO - Romania 31
CL - Cile 30
ZA - Sudafrica 30
CO - Colombia 28
MA - Marocco 28
AP - ???statistics.table.value.countryCode.AP??? 25
IL - Israele 25
KE - Kenya 25
SA - Arabia Saudita 22
VE - Venezuela 22
JO - Giordania 21
NO - Norvegia 19
DZ - Algeria 18
UZ - Uzbekistan 18
LT - Lituania 17
NP - Nepal 16
AU - Australia 15
CZ - Repubblica Ceca 15
PT - Portogallo 15
EE - Estonia 14
PY - Paraguay 14
HR - Croazia 13
TN - Tunisia 13
DK - Danimarca 12
KZ - Kazakistan 12
BO - Bolivia 11
DO - Repubblica Dominicana 11
EG - Egitto 11
JM - Giamaica 11
AZ - Azerbaigian 10
PE - Perù 10
BY - Bielorussia 9
GH - Ghana 9
GR - Grecia 8
HU - Ungheria 8
AL - Albania 7
SI - Slovenia 7
AM - Armenia 6
CR - Costa Rica 6
GE - Georgia 6
KG - Kirghizistan 6
HN - Honduras 5
LB - Libano 5
NG - Nigeria 5
OM - Oman 5
PS - Palestinian Territory 5
RS - Serbia 5
SY - Repubblica araba siriana 5
UY - Uruguay 5
BB - Barbados 4
CI - Costa d'Avorio 4
LU - Lussemburgo 4
QA - Qatar 4
BH - Bahrain 3
KW - Kuwait 3
LV - Lettonia 3
NI - Nicaragua 3
SK - Slovacchia (Repubblica Slovacca) 3
Totale 52.368
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Città #
Ashburn 4.519
Southend 2.789
Singapore 2.021
Seattle 1.842
Fairfield 1.258
San Jose 1.114
Chandler 998
Beijing 955
Turin 902
Ho Chi Minh City 755
Hanoi 683
Houston 610
Princeton 609
Woodbridge 607
Santa Clara 602
Ann Arbor 550
Cambridge 544
Boardman 520
Hong Kong 514
Jacksonville 457
Wilmington 454
Berlin 410
Torino 391
Seoul 373
Dublin 353
Milan 336
Los Angeles 323
San Ramon 311
Izmir 303
Council Bluffs 292
Dallas 273
Bern 251
Lauterbourg 190
Saint Petersburg 181
Helsinki 177
Chicago 170
Buffalo 159
Vienna 159
Zhengzhou 158
Des Moines 157
Brussels 156
Rome 155
San Donato Milanese 154
Shanghai 153
North Bergen 138
Hefei 137
Da Nang 130
Zaporozhye 116
Baltimore 109
Pennsylvania Furnace 108
Bologna 102
Haiphong 101
Frankfurt 99
New York 99
Amsterdam 98
Overberg 90
Moscow 89
Jakarta 85
Guangzhou 84
Fremont 82
São Paulo 82
Shenzhen 79
Hangzhou 77
San Francisco 77
Bremen 76
Frankfurt am Main 66
Mountain View 65
Munich 62
Tokyo 59
Toronto 59
Paris 57
Monopoli 56
Lappeenranta 55
Padua 55
Redwood City 55
Nuremberg 54
Piscataway 52
Washington 50
Istanbul 45
San Diego 45
Valfenera 44
Herkenbosch 43
The Dalles 43
Groningen 42
Columbus 40
Figino 40
London 39
Hải Dương 36
Overland Park 36
Norwalk 35
Menlo Park 34
Bangkok 33
Atlanta 31
Zurich 31
Biên Hòa 30
Nha Trang 30
Sofia 30
Orem 29
Rio de Janeiro 29
Thái Nguyên 29
Totale 32.485
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Nome #
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 705
Theoretical investigation of BeZnO-based UV LEDs 593
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 510
Alloy scattering in AlGaN and InGaN: A numerical study 489
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations 487
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 469
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 467
Broad Band Coaxial Directional Couplers for High Power Applications 464
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 463
Conformal Mapping Design Tools for Coaxial Couplers with Complex Cross Section 453
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part I. Binarycompounds GaN, AlN, and InN 448
Role of defects in the thermal droop of InGaN-based light emitting diodes 445
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part II. Ternaryalloys AlGaN, InGaN, and AlInN 437
Simplex algorithm for band structure calculation of noncubic symmetry semiconductors: Application to III-nitride binaries and alloys 423
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 413
Revisiting the partial-capacitance approach to the analysis of coplanar transmission lines on multilayered substrates 403
An accurate dual-expansion-point full-Brillouin-zone k center dot p model for wurtzite semiconductors 400
Monte Carlo calculation of the electron capture time in single quantum wells 398
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 394
A numerical study of Auger recombination in bulk InGaN 388
Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN 387
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 387
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 383
Modeling challenges for high-efficiency visible light-emitting diodes 370
DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS 368
Numerical modeling of hole interband tunneling in wurtzite GaN and SiC 362
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 358
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 355
Analysis and design criteria of three-section DBR tunable lasers 353
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach 351
Theoretical investigation of GaN permeable base transistors for microwave power applications 347
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 345
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 343
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 343
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties 343
Triggering of guiding and antiguiding effects in GaN-based VCSELs 333
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 333
VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator 330
Many-valley electron transport in AlGaAs VCSELs 327
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 326
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 324
A reduced-order technique for the acceleration of electronic structure calculations 323
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation 321
Numerical analysis of indirect Auger transitions in InGaN 321
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 313
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 311
Numerical study of ZnO-based LEDs 308
Physics Based Modeling of Submicron GaN Permeable Base Transistors 305
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 303
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study 302
Algorithm 745. Computation of the complete and incomplete Fermi-Dirac integral 301
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications 301
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium 300
Design of High Power Low Noise Polarization Insensitive Ridge Waveguide Laser Amplifiers 299
Auger recombination in bulk InGaN and quantum wells: a numerical simulation study 298
Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes 297
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 297
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 297
Theory of high field carrier transport and impact ionization in ZnO 297
Full-band Monte Carlo simulation of HgCdTe APDs 294
A Closed-Form CAD-Oriented Model for the High-Frequency Conductor Attenuation of Symmetrical Coupled Coplanar Waveguides 294
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook 288
Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D 288
Series expansion of the Fermi-Dirac integral F_j(x) over the entire domain of real j and x 287
A novel reduced-order model for full-wave waveguide analysis 282
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 279
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells 277
Monte Carlo Simulation of Electron Transport in theIII-Nitride Wurtzite Phase Materials System: Binaries andTernaries 276
Full-band Monte Carlo simulation of HgCdTe APDs 274
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 274
The Influence of Ground Plane Width on the Ohmic Losses of Coplanar Waveguides With Finite Lateral Ground Planes 272
Optical Properties of III-Nitride Ternary Compounds 271
A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures 268
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section 267
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 266
TCAD-Assisted Progress on the Cisco Platform Toward Low-Bias 200 Gbit/s vertical-pin Ge- on-Si Waveguide Photodetectors 264
Simulazione e progetto termico di transistori eMMIC di potenza su semiconduttori composti per applicazioni spaziali 264
Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model 264
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe 263
Microwave modeling and characterization of thick coplanar waveguides on oxide-coated Lithium Niobate substrates for electro-optical applications 262
Auger transitions and their signatures in III-nitride LEDs: a full-band modeling 262
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 260
Exact, conformal-mapping models for the high-frequency losses of coplanar waveguides with thick electrodes of rectangular or trapezoidal cross section 258
Thermal lensing effects on lateral leakage in GaN-based vertical-cavity surface-emitting laser cavities 256
Modeling Infrared Superlattice Photodetectors: From Nonequilibrium Green’s Functions to Quantum-Corrected Drift Diffusion 256
Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO 255
Physics-based design of III-nitride and ZnO LEDs: from material properties to device optimization 254
Nonequilibrium Green’s Function Modeling of type-II Superlattice Detectors and its Connection to Semiclassical Approaches 254
Ab initio, nonlocal pseudopotential, and full-zone k*p computation of the electronic structure of wurtzite BeO 253
A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications 252
Design of High-power Ridge Waveguide 980-nm Pump Lasers 251
Fast, reduced order full-wave FEM analysis of broadband traveling-wave electrooptical modulators 249
Accurate and efficient numerical quasi-TEM modeling of coplanarwaveguides for high-speed electro-optic modulators 248
Electronic and optical properties of ZnO/MgZnO and ZnO/BeZnO quantum wells 248
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 248
Simulation of carrier transport in wide band gap semiconductors 248
Simulazione e progetto termico di transistori e MMIC di potenza su semiconduttori composti per applicazioni spaziali 247
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 246
Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation 245
Electron Transport 245
Totale 32.920
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Categoria #
all - tutte 143.872
article - articoli 78.989
book - libri 675
conference - conferenze 62.250
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.958
Totale 287.744
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.800 192 204 99 250 202 174 82 106 262 205 449 575
2022/20233.729 330 599 74 338 518 479 350 138 346 50 186 321
2023/20241.421 75 145 60 101 82 109 71 86 107 107 258 220
2024/20255.364 114 929 340 537 518 301 338 284 796 308 368 531
2025/202613.800 684 653 892 1.157 903 857 2.113 995 3.089 1.233 363 861
2026/2027184 184 0 0 0 0 0 0 0 0 0 0 0
Totale 52.831