PORTO @ Archivio Istituzionale della Ricerca

GOANO, MICHELE
 Distribuzione geografica
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Continente #
NA - Nord America 15.742
EU - Europa 14.557
AS - Asia 2.835
AF - Africa 71
SA - Sud America 35
Continente sconosciuto - Info sul continente non disponibili 11
OC - Oceania 9
Totale 33.260
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Nazione #
US - Stati Uniti d'America 15.645
IT - Italia 3.209
GB - Regno Unito 3.078
DE - Germania 2.602
FR - Francia 2.339
CN - Cina 1.470
UA - Ucraina 843
NL - Olanda 391
IE - Irlanda 390
RU - Federazione Russa 350
TR - Turchia 344
SE - Svezia 317
CH - Svizzera 282
KR - Corea 264
SG - Singapore 224
FI - Finlandia 171
BE - Belgio 157
AT - Austria 154
IN - India 122
MY - Malesia 102
CA - Canada 97
HK - Hong Kong 76
JP - Giappone 67
EU - Europa 44
IR - Iran 40
SN - Senegal 33
BG - Bulgaria 30
RO - Romania 27
ES - Italia 26
PL - Polonia 26
AP - ???statistics.table.value.countryCode.AP??? 25
AE - Emirati Arabi Uniti 24
IL - Israele 23
TW - Taiwan 21
BR - Brasile 20
VN - Vietnam 20
NO - Norvegia 18
EE - Estonia 14
PK - Pakistan 13
DK - Danimarca 12
HR - Croazia 11
SA - Arabia Saudita 11
CZ - Repubblica Ceca 10
DZ - Algeria 10
PT - Portogallo 10
AU - Australia 9
CL - Cile 9
GH - Ghana 9
GR - Grecia 5
JO - Giordania 5
LT - Lituania 5
ZA - Sudafrica 5
PH - Filippine 4
CI - Costa d'Avorio 3
HU - Ungheria 3
LU - Lussemburgo 3
NG - Nigeria 3
PE - Perù 3
SI - Slovenia 3
BY - Bielorussia 2
EG - Egitto 2
KE - Kenya 2
LV - Lettonia 2
SC - Seychelles 2
TN - Tunisia 2
UZ - Uzbekistan 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AL - Albania 1
AM - Armenia 1
AR - Argentina 1
BD - Bangladesh 1
CO - Colombia 1
EC - Ecuador 1
IQ - Iraq 1
KZ - Kazakistan 1
MO - Macao, regione amministrativa speciale della Cina 1
QA - Qatar 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
Totale 33.260
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Città #
Ashburn 3.914
Southend 2.789
Seattle 1.832
Fairfield 1.258
Chandler 998
Beijing 707
Turin 687
Princeton 609
Woodbridge 607
Houston 604
Ann Arbor 550
Cambridge 543
Jacksonville 457
Wilmington 453
Berlin 405
Torino 391
Dublin 349
Boardman 313
San Ramon 311
Izmir 301
Bern 251
Saint Petersburg 181
Council Bluffs 169
Chicago 156
Des Moines 155
San Donato Milanese 154
Zhengzhou 151
Helsinki 150
Vienna 144
Brussels 143
Milan 134
Shanghai 130
Singapore 126
Zaporozhye 116
Seoul 113
Pennsylvania Furnace 108
Baltimore 104
Frankfurt 99
Bologna 95
Overberg 90
Amsterdam 87
Fremont 82
Bremen 76
Shenzhen 76
Hangzhou 74
Guangzhou 69
San Francisco 68
Mountain View 65
Rome 58
Monopoli 56
Buffalo 55
Redwood City 55
Padua 51
Washington 48
Piscataway 45
Valfenera 44
Herkenbosch 43
San Diego 43
Paris 42
Overland Park 36
Toronto 35
Menlo Park 34
San Jose 34
Norwalk 33
Sofia 28
Wenzhou 27
Melun 24
Columbus 23
Lecce 22
New York 22
Andover 21
Durgapur 21
Atlanta 20
Redmond 20
Abu Dhabi 19
Lappeenranta 18
Los Angeles 18
Moscow 18
Kiev 17
San Mateo 17
Tokyo 17
Frankfurt Am Main 16
Malatya 16
Miami 16
Shaoxing 16
Dallas 15
Galati 15
Hanoi 15
Kunming 15
Lake Forest 15
Las Vegas 15
London 15
Nanjing 15
San Antonio 15
Zurich 15
Jamaica Plain 14
Zhitomir 14
Chennai 13
Montréal 13
Ningbo 13
Totale 22.789
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Nome #
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 550
Theoretical investigation of BeZnO-based UV LEDs 508
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 372
Alloy scattering in AlGaN and InGaN: A numerical study 368
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 364
Broad Band Coaxial Directional Couplers for High Power Applications 363
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 360
Simplex algorithm for band structure calculation of noncubic symmetry semiconductors: Application to III-nitride binaries and alloys 346
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 346
Conformal Mapping Design Tools for Coaxial Couplers with Complex Cross Section 342
Monte Carlo calculation of the electron capture time in single quantum wells 341
Role of defects in the thermal droop of InGaN-based light emitting diodes 340
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations 337
Revisiting the partial-capacitance approach to the analysis of coplanar transmission lines on multilayered substrates 335
Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN 331
An accurate dual-expansion-point full-Brillouin-zone k center dot p model for wurtzite semiconductors 328
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 312
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part II. Ternaryalloys AlGaN, InGaN, and AlInN 301
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part I. Binarycompounds GaN, AlN, and InN 300
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 298
Numerical modeling of hole interband tunneling in wurtzite GaN and SiC 290
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 290
Analysis and design criteria of three-section DBR tunable lasers 289
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 287
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 287
DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS 270
Theoretical investigation of GaN permeable base transistors for microwave power applications 269
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 268
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 266
A numerical study of Auger recombination in bulk InGaN 264
Triggering of guiding and antiguiding effects in GaN-based VCSELs 263
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties 262
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 257
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 254
Modeling challenges for high-efficiency visible light-emitting diodes 252
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 251
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 248
A reduced-order technique for the acceleration of electronic structure calculations 245
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook 242
Many-valley electron transport in AlGaAs VCSELs 241
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 238
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 235
Numerical study of ZnO-based LEDs 235
A Closed-Form CAD-Oriented Model for the High-Frequency Conductor Attenuation of Symmetrical Coupled Coplanar Waveguides 234
Full-band Monte Carlo simulation of HgCdTe APDs 231
Auger recombination in bulk InGaN and quantum wells: a numerical simulation study 230
Design of High Power Low Noise Polarization Insensitive Ridge Waveguide Laser Amplifiers 226
Theory of high field carrier transport and impact ionization in ZnO 226
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation 225
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 225
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 223
Numerical analysis of indirect Auger transitions in InGaN 223
Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes 219
Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D 218
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section 218
Physics Based Modeling of Submicron GaN Permeable Base Transistors 218
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 217
Algorithm 745. Computation of the complete and incomplete Fermi-Dirac integral 216
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 216
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium 216
A novel reduced-order model for full-wave waveguide analysis 213
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications 211
Optical Properties of III-Nitride Ternary Compounds 211
Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model 210
The Influence of Ground Plane Width on the Ohmic Losses of Coplanar Waveguides With Finite Lateral Ground Planes 208
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 205
Design of High-power Ridge Waveguide 980-nm Pump Lasers 203
A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications 203
Full-band Monte Carlo simulation of HgCdTe APDs 202
Series expansion of the Fermi-Dirac integral F_j(x) over the entire domain of real j and x 202
Exact, conformal-mapping models for the high-frequency losses of coplanar waveguides with thick electrodes of rectangular or trapezoidal cross section 202
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study 201
Microwave modeling and characterization of thick coplanar waveguides on oxide-coated Lithium Niobate substrates for electro-optical applications 200
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 200
Fast, reduced order full-wave FEM analysis of broadband traveling-wave electrooptical modulators 198
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 198
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 198
Accurate and efficient numerical quasi-TEM modeling of coplanarwaveguides for high-speed electro-optic modulators 196
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 196
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells 195
Auger transitions and their signatures in III-nitride LEDs: a full-band modeling 193
Capture and escape in quantum wells as scattering events in Monte Carlo simulation 192
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe 192
A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures 190
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 189
Fast higher-order full-wave FEM analysis of traveling-wave optoelectronic devices 188
Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation 185
Auger lifetime in narrow gap semiconductors 185
Thermal lensing effects on lateral leakage in GaN-based vertical-cavity surface-emitting laser cavities 185
Progress and challenges in electrically pumped GaN-based VCSELs 184
Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO 184
Simulazione e progetto termico di transistori e MMIC di potenza su semiconduttori composti per applicazioni spaziali 183
Ab initio, nonlocal pseudopotential, and full-zone k*p computation of the electronic structure of wurtzite BeO 183
Ab initio electron-phonon interactions for high-field transport simulation in ZnO 181
Memory-efficient technique for inclusion of carrier degeneracy in Monte Carlo transport simulation 179
Experimental electron mobility in ZnO: a reassessment through Monte Carlo simulation 179
Numerical simulation of ZnO-based LEDs 178
Direction-dependent band nonparabolicity effects on high-field electron transport in GaN 178
Saga of efficiency degradation at high injection in InGaN light emitting diodes 178
Model for carrier capture time through phonon emission in InGaN/GaN quantum wells 175
Totale 24.659
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Categoria #
all - tutte 90.175
article - articoli 50.662
book - libri 494
conference - conferenze 37.829
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.190
Totale 180.350
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20203.389 0 207 108 464 407 406 381 474 479 233 137 93
2020/20212.872 347 389 167 315 147 256 162 163 248 355 190 133
2021/20222.800 192 204 99 250 202 174 82 106 262 205 449 575
2022/20233.729 330 599 74 338 518 479 350 138 346 50 186 321
2023/20241.421 75 145 60 101 82 109 71 86 107 107 258 220
2024/2025155 114 41 0 0 0 0 0 0 0 0 0 0
Totale 33.638