PORTO @ Archivio Istituzionale della Ricerca

GOANO, MICHELE
 Distribuzione geografica
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Continente #
NA - Nord America 18.284
EU - Europa 15.744
AS - Asia 7.674
SA - Sud America 869
AF - Africa 125
Continente sconosciuto - Info sul continente non disponibili 13
OC - Oceania 11
Totale 42.720
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Nazione #
US - Stati Uniti d'America 18.083
IT - Italia 3.555
GB - Regno Unito 3.131
SG - Singapore 2.779
DE - Germania 2.752
CN - Cina 2.733
FR - Francia 2.449
UA - Ucraina 858
BR - Brasile 733
KR - Corea 599
RU - Federazione Russa 588
NL - Olanda 410
TR - Turchia 406
IE - Irlanda 393
SE - Svezia 326
CH - Svizzera 286
FI - Finlandia 242
AT - Austria 241
HK - Hong Kong 224
VN - Vietnam 203
BE - Belgio 168
IN - India 146
CA - Canada 142
MY - Malesia 104
ID - Indonesia 100
JP - Giappone 93
ES - Italia 45
AR - Argentina 44
EU - Europa 44
IR - Iran 43
PL - Polonia 43
MX - Messico 38
SN - Senegal 37
BG - Bulgaria 32
PK - Pakistan 28
BD - Bangladesh 27
RO - Romania 27
TW - Taiwan 27
AE - Emirati Arabi Uniti 25
AP - ???statistics.table.value.countryCode.AP??? 25
EC - Ecuador 24
IL - Israele 24
ZA - Sudafrica 22
IQ - Iraq 21
NO - Norvegia 19
LT - Lituania 16
SA - Arabia Saudita 16
CL - Cile 15
CO - Colombia 15
EE - Estonia 14
CZ - Repubblica Ceca 13
DZ - Algeria 13
KE - Kenya 13
PY - Paraguay 13
DK - Danimarca 12
UZ - Uzbekistan 12
AU - Australia 11
HR - Croazia 11
PT - Portogallo 11
GH - Ghana 9
JO - Giordania 9
KZ - Kazakistan 9
AZ - Azerbaigian 8
NP - Nepal 8
VE - Venezuela 8
BY - Bielorussia 7
EG - Egitto 7
GR - Grecia 7
MA - Marocco 7
PE - Perù 7
DO - Repubblica Dominicana 6
BO - Bolivia 5
HU - Ungheria 5
TN - Tunisia 5
LU - Lussemburgo 4
PH - Filippine 4
SI - Slovenia 4
TH - Thailandia 4
AL - Albania 3
AM - Armenia 3
CI - Costa d'Avorio 3
KG - Kirghizistan 3
KW - Kuwait 3
LV - Lettonia 3
NG - Nigeria 3
NI - Nicaragua 3
PS - Palestinian Territory 3
UY - Uruguay 3
BB - Barbados 2
BH - Bahrain 2
CR - Costa Rica 2
HN - Honduras 2
JM - Giamaica 2
KH - Cambogia 2
LB - Libano 2
OM - Oman 2
QA - Qatar 2
RS - Serbia 2
SC - Seychelles 2
SK - Slovacchia (Repubblica Slovacca) 2
Totale 42.701
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Città #
Ashburn 4.219
Southend 2.789
Seattle 1.840
Singapore 1.601
Fairfield 1.258
Chandler 998
Beijing 942
Turin 853
Princeton 609
Woodbridge 607
Houston 605
Santa Clara 559
Ann Arbor 550
Cambridge 543
Boardman 514
Jacksonville 457
Wilmington 453
Berlin 406
Torino 391
Dublin 352
San Ramon 311
Izmir 302
Dallas 258
Seoul 252
Bern 251
Council Bluffs 192
Saint Petersburg 181
Milan 174
Chicago 165
Helsinki 160
Zhengzhou 158
Vienna 157
Des Moines 155
Brussels 154
San Donato Milanese 154
Hong Kong 151
Buffalo 147
Shanghai 147
Hefei 137
Los Angeles 127
Zaporozhye 116
Pennsylvania Furnace 108
Baltimore 104
Frankfurt 99
Bologna 96
Amsterdam 91
Overberg 90
Jakarta 85
Fremont 82
North Bergen 82
Guangzhou 81
Hangzhou 77
Shenzhen 77
Bremen 76
San Francisco 76
Rome 70
Ho Chi Minh City 69
São Paulo 66
Mountain View 65
Munich 61
Monopoli 56
Hanoi 55
Redwood City 55
Lappeenranta 52
Padua 52
Paris 52
Toronto 50
Washington 49
Nuremberg 48
Piscataway 45
Valfenera 44
Herkenbosch 43
Istanbul 43
San Diego 43
Frankfurt am Main 42
New York 39
Tokyo 39
Overland Park 36
London 35
Menlo Park 34
San Jose 34
Norwalk 33
Columbus 30
Sofia 29
Wenzhou 29
Yubileyny 27
Rio de Janeiro 25
St Petersburg 25
Turku 25
Atlanta 24
Melun 24
Moscow 24
Guiyang 23
Lecce 23
Andover 21
Durgapur 21
Jamaica Plain 20
Kunming 20
Redmond 20
Abu Dhabi 19
Totale 27.358
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Nome #
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach 621
Theoretical investigation of BeZnO-based UV LEDs 556
Alloy scattering in AlGaN and InGaN: A numerical study 433
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 432
Broad Band Coaxial Directional Couplers for High Power Applications 426
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 425
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 418
Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach 417
Conformal Mapping Design Tools for Coaxial Couplers with Complex Cross Section 404
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations 393
Role of defects in the thermal droop of InGaN-based light emitting diodes 388
Simplex algorithm for band structure calculation of noncubic symmetry semiconductors: Application to III-nitride binaries and alloys 384
Revisiting the partial-capacitance approach to the analysis of coplanar transmission lines on multilayered substrates 372
Monte Carlo calculation of the electron capture time in single quantum wells 371
An accurate dual-expansion-point full-Brillouin-zone k center dot p model for wurtzite semiconductors 367
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part II. Ternaryalloys AlGaN, InGaN, and AlInN 360
Band structure nonlocal pseudopotential calculation of theIII-nitride wurtzite phase materials system. Part I. Binarycompounds GaN, AlN, and InN 358
Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN 357
Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments 352
Deriving k.p parameters from full-Brillouin-zone descriptions: a finite-element envelope function model for quantum-confined wurtzite nanostructures 343
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs 339
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 324
Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering 322
Numerical modeling of hole interband tunneling in wurtzite GaN and SiC 321
Analysis and design criteria of three-section DBR tunable lasers 321
A numerical study of Auger recombination in bulk InGaN 320
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation 316
DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS 315
Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective 312
Triggering of guiding and antiguiding effects in GaN-based VCSELs 303
Theoretical investigation of GaN permeable base transistors for microwave power applications 302
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties 301
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study 299
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 294
Modeling challenges for high-efficiency visible light-emitting diodes 288
A Fast Reduced-Order Model for the Full-Wave FEM Analysis of Lossy Inhomogeneous Anisotropic Waveguides 288
Many-valley electron transport in AlGaAs VCSELs 280
A reduced-order technique for the acceleration of electronic structure calculations 280
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation 277
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 273
Physics Based Modeling of Submicron GaN Permeable Base Transistors 273
Auger recombination in bulk InGaN and quantum wells: a numerical simulation study 270
Numerical study of ZnO-based LEDs 269
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 267
Numerical analysis of indirect Auger transitions in InGaN 267
A Closed-Form CAD-Oriented Model for the High-Frequency Conductor Attenuation of Symmetrical Coupled Coplanar Waveguides 266
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors 264
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook 262
Design of High Power Low Noise Polarization Insensitive Ridge Waveguide Laser Amplifiers 261
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 261
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study 261
Full-band Monte Carlo simulation of HgCdTe APDs 260
Theory of high field carrier transport and impact ionization in ZnO 260
Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors 257
Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes 256
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation 255
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium 254
VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator 252
Towards a comprehensive 3D VCSEL model: Electrical simulations with PICS3D 251
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications 250
Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach 249
Full-band Monte Carlo simulation of HgCdTe APDs 244
Algorithm 745. Computation of the complete and incomplete Fermi-Dirac integral 242
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 242
A novel reduced-order model for full-wave waveguide analysis 241
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells 240
Exact, conformal-mapping models for the high-frequency losses of coplanar waveguides with thick electrodes of rectangular or trapezoidal cross section 239
Broadband 3D optical modeling of HgCdTe infrared focal plane arrays 239
3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors 238
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section 237
The Influence of Ground Plane Width on the Ohmic Losses of Coplanar Waveguides With Finite Lateral Ground Planes 236
Optical Properties of III-Nitride Ternary Compounds 236
Empirical pseudopotential and full-Brillouin-zone k*p electronic structure of CdTe, HgTe and HgCdTe 235
Microwave modeling and characterization of thick coplanar waveguides on oxide-coated Lithium Niobate substrates for electro-optical applications 234
Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model 234
A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures 233
A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications 232
Auger transitions and their signatures in III-nitride LEDs: a full-band modeling 231
Energy balance modeling of Ge-on-Si waveguide avalanche photodetectors 228
Series expansion of the Fermi-Dirac integral F_j(x) over the entire domain of real j and x 227
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors 226
Design of High-power Ridge Waveguide 980-nm Pump Lasers 225
Ab initio and full-zone k*p computations of the electronic structure of wurtzite BeO 225
Accurate and efficient numerical quasi-TEM modeling of coplanarwaveguides for high-speed electro-optic modulators 224
Thermal lensing effects on lateral leakage in GaN-based vertical-cavity surface-emitting laser cavities 223
Fast, reduced order full-wave FEM analysis of broadband traveling-wave electrooptical modulators 221
Modeling photocurrent spectra of single-color and dual-band HgCdTe photodetectors: Is 3D simulation unavoidable? 221
Capture and escape in quantum wells as scattering events in Monte Carlo simulation 221
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs 220
Simulation of carrier transport in wide band gap semiconductors 218
Simulazione e progetto termico di transistori eMMIC di potenza su semiconduttori composti per applicazioni spaziali 216
Monte Carlo Simulation of Electron Transport in theIII-Nitride Wurtzite Phase Materials System: Binaries andTernaries 216
Ab initio, nonlocal pseudopotential, and full-zone k*p computation of the electronic structure of wurtzite BeO 215
Fast higher-order full-wave FEM analysis of traveling-wave optoelectronic devices 214
Progress and challenges in electrically pumped GaN-based VCSELs 214
Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation 213
Microwave modeling and characterization of thick coplanar waveguides on oxide-coated Lithium Niobate substrates for electro-optical applications 213
Electronic and optical properties of ZnO/MgZnO and ZnO/BeZnO quantum wells 211
Simulazione e progetto termico di transistori e MMIC di potenza su semiconduttori composti per applicazioni spaziali 210
Auger lifetime in narrow gap semiconductors 209
Totale 28.560
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Categoria #
all - tutte 124.633
article - articoli 68.692
book - libri 591
conference - conferenze 53.634
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.716
Totale 249.266
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.654 0 0 0 0 147 256 162 163 248 355 190 133
2021/20222.800 192 204 99 250 202 174 82 106 262 205 449 575
2022/20233.729 330 599 74 338 518 479 350 138 346 50 186 321
2023/20241.421 75 145 60 101 82 109 71 86 107 107 258 220
2024/20255.364 114 929 340 537 518 301 338 284 796 308 368 531
2025/20264.289 684 653 892 1.157 903 0 0 0 0 0 0 0
Totale 43.136