Archivio Istituzionale della RicercaA physics-based simulation tool is presented allowing for the 2D mixed-mode, self-consistent simulation of GaN HEMTs including the full dynamic effect of traps. The model is solved in the frequency domain exploiting Harmonic Balance, and is used here to discuss the dispersive effects of traps in Class A and deep Class AB power stages developed on GaN technology, with reference to T-dependent dynamic load lines and dispersive DC current.
Harmonic Balance TCAD Trap Modeling of GaN HEMTs for Design Technology Co-Optimization / De Ruvo, E., Guerrieri, S.D., Bonani, F.. - ELETTRONICO. - (2026), pp. 1-3. (2026 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO) Valencia, Spain 1-3 July 2026) [10.1109/nemo66765.2026.11622141].
Harmonic Balance TCAD Trap Modeling of GaN HEMTs for Design Technology Co-Optimization
De Ruvo, Edoardo;Guerrieri, Simona Donati;Bonani, Fabrizio
2026
Abstract
A physics-based simulation tool is presented allowing for the 2D mixed-mode, self-consistent simulation of GaN HEMTs including the full dynamic effect of traps. The model is solved in the frequency domain exploiting Harmonic Balance, and is used here to discuss the dispersive effects of traps in Class A and deep Class AB power stages developed on GaN technology, with reference to T-dependent dynamic load lines and dispersive DC current.
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https://hdl.handle.net/11583/3014802
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