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Harmonic Balance TCAD Trap Modeling of GaN HEMTs for Design Technology Co-Optimization
2026 De Ruvo, Edoardo; Guerrieri, Simona Donati; Bonani, Fabrizio
Role of Traps in Gate Leakage Current in p-gate GaN HEMTs Through TCAD Simulations
2026 De Ruvo, Edoardo; Donati Guerrieri, Simona; Bonani, Fabrizio
TCAD Simulations of Degradation Mechanism in p-GaN Gate HEMTs under Gate Stress
2026 De Ruvo, Edoardo; Guerrieri, Simona Donati; Bonani, Fabrizio; Cornigli, Davide; Larcher, Luca
| Citazione | Data di pubblicazione | Autori | File |
|---|---|---|---|
| Harmonic Balance TCAD Trap Modeling of GaN HEMTs for Design Technology Co-Optimization / De Ruvo, E., Guerrieri, S.D., Bonani, F.. - ELETTRONICO. - (2026), pp. 1-3. (2026 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO) Valencia, Spain 1-3 July 2026) [10.1109/nemo66765.2026.11622141]. | 1-gen-2026 | De Ruvo, EdoardoGuerrieri, Simona DonatiBonani, Fabrizio | - |
| Role of Traps in Gate Leakage Current in p-gate GaN HEMTs Through TCAD Simulations / De Ruvo, E., Donati Guerrieri, S., Bonani, F.. - ELETTRONICO. - (2026), pp. 43-50. (56th Annual Meeting of the Italian Electronics Society (SIE) Napoli (Ita) 25-27 June 2025) [10.1007/978-3-032-17305-8_6]. | 1-gen-2026 | De Ruvo, EdoardoDonati Guerrieri, SimonaBonani, Fabrizio | DeRuvo_RoleOfTrapsInGateLeakageCurrent.pdf; SIE 25.pdf |
| TCAD Simulations of Degradation Mechanism in p-GaN Gate HEMTs under Gate Stress / De Ruvo, E., Guerrieri, S.D., Bonani, F., Cornigli, D., Larcher, L.. - ELETTRONICO. - (2026), pp. 1-6. (2026 IEEE International Reliability Physics Symposium (IRPS) Tucson (USA) 22-26 March 2026) [10.1109/irps61424.2026.11499242]. | 1-gen-2026 | De Ruvo, EdoardoGuerrieri, Simona DonatiBonani, Fabrizio + | IRPS 26.pdf; FINAL.pdf |