Accurate large-signal (LS) modeling of Fin Field-Effect Transistors (FinFETs) plays an important role in designing microwave circuits for the next generation of communication systems and quantum sensing. In this work we propose preliminary results on a novel approach to LS FinFET modeling, that translates the X-parameters from physical TCAD analysis into deep neural networks (DNNs). The proposed method includes two phases. First, the X-parameters of nonlinear active device are extracted trough accurate TCAD physical simulations. Then, a long short-term memory (LSTM)-based DNN is employed for ANN modelling, to reproduce the scattered waves for any given incident waves up to the 5th harmonic. Similarly to X-parameters, the proposed DNN model simulates the transistor behavior around the large-signal operating point. Unlike the original X-parameter method, though, the DNN approach can incorporate the dependency on bias or other technological and physical parameters in a seamless and numerically efficient way. Hence, once implemented into circuit simulators, it allows for faster and more accurate circuit design.
Synergic Exploitation of TCAD and Deep Neural Networks for Nonlinear FinFET Modeling / Kouhalvandi, Lida; Catoggio, Eva; DONATI GUERRIERI, Simona. - ELETTRONICO. - (2023), pp. 542-546. (Intervento presentato al convegno IEEE EUROCON 2023 - 20th International Conference on Smart Technologies tenutosi a Torino, Italy nel 6-8 July 2023) [10.1109/EUROCON56442.2023.10198982].
Synergic Exploitation of TCAD and Deep Neural Networks for Nonlinear FinFET Modeling
Lida Kouhalvandi;Eva Catoggio;Simona Donati Guerrieri
2023
Abstract
Accurate large-signal (LS) modeling of Fin Field-Effect Transistors (FinFETs) plays an important role in designing microwave circuits for the next generation of communication systems and quantum sensing. In this work we propose preliminary results on a novel approach to LS FinFET modeling, that translates the X-parameters from physical TCAD analysis into deep neural networks (DNNs). The proposed method includes two phases. First, the X-parameters of nonlinear active device are extracted trough accurate TCAD physical simulations. Then, a long short-term memory (LSTM)-based DNN is employed for ANN modelling, to reproduce the scattered waves for any given incident waves up to the 5th harmonic. Similarly to X-parameters, the proposed DNN model simulates the transistor behavior around the large-signal operating point. Unlike the original X-parameter method, though, the DNN approach can incorporate the dependency on bias or other technological and physical parameters in a seamless and numerically efficient way. Hence, once implemented into circuit simulators, it allows for faster and more accurate circuit design.File | Dimensione | Formato | |
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https://hdl.handle.net/11583/2981381