This work describes a comparative radiation reliability analysis between two reconfigurable devices with different manufacturing technology: 28 nm CMOS-based and 16 nm FinFET based FPGAs. The analysis is based on a proton radiation test campaign performed at the PSI radiation facility. As application circuit, a multi-core computational engine was implemented on each one of the reconfigurable devices. The radiation sensitivity has been reported in terms of the SEU cross-section of the configuration memory bits. Results have shown a higher sensitivity of 28 nm CMOS with respect to 16 nm FinFET. Moreover, a detailed comparison of detected Single Event Multiple Upsets (SEMUs) clusters for both technology is reported.

A Comparative Radiation Analysis of Reconfigurable Memory Technologies: FinFET versus Bulk CMOS / Azimi, S.; De Sio, C.; Portaluri, A.; Rizzieri, D.; Sterpone, L.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 138:(2022), pp. 1-5. [10.1016/j.microrel.2022.114733]

A Comparative Radiation Analysis of Reconfigurable Memory Technologies: FinFET versus Bulk CMOS

S. Azimi;C. De Sio;A. Portaluri;D. Rizzieri;L. Sterpone
2022

Abstract

This work describes a comparative radiation reliability analysis between two reconfigurable devices with different manufacturing technology: 28 nm CMOS-based and 16 nm FinFET based FPGAs. The analysis is based on a proton radiation test campaign performed at the PSI radiation facility. As application circuit, a multi-core computational engine was implemented on each one of the reconfigurable devices. The radiation sensitivity has been reported in terms of the SEU cross-section of the configuration memory bits. Results have shown a higher sensitivity of 28 nm CMOS with respect to 16 nm FinFET. Moreover, a detailed comparison of detected Single Event Multiple Upsets (SEMUs) clusters for both technology is reported.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2971155