A Comparative Radiation Analysis of Reconfigurable Memory Technologies: FinFET versus Bulk CMOS

This work describes a comparative radiation reliability analysis between two reconfigurable devices with different manufacturing technology: 28 nm CMOS-based and 16 nm FinFET based FPGAs. The analysis is based on a proton radiation test campaign performed at the PSI radiation facility. As application circuit, a multi-core computational engine was implemented on each one of the reconfigurable devices. The radiation sensitivity has been reported in terms of the SEU cross-section of the configuration memory bits. Results have shown a higher sensitivity of 28 nm CMOS with respect to 16 nm FinFET. Moreover, a detailed comparison of detected Single Event Multiple Upsets (SEMUs) clusters for both technology is reported.