We present an efficient approach to the temperature-dependent physics-based variability analysis of electron devices in Large Signal (LS) nonlinear conditions. The method extends, with negligible numerical overhead, the Green’s Function (GF) approach, already developed for the device LS noise and technological sensitivity, and allows to calculate the LS device response to the temperature variation from a nominal, “cold” condition with concurrent variations of technological parameters. As a demonstrator we show the T-dependent TCAD simulations of a FinFET-based class A power amplifier against device heating in conjunction with doping variations of the channel contact regions. More than 1 dB output power loss with 50 K temperature heating is demonstrated, while doping variations further affect the PA 1 dB compression point with a 1 dB input power spread.
Efficient TCAD Large-Signal temperature-dependent variability analysis of a FinFET power amplifier / Catoggio, E.; Guerrieri, S. Donati; Bonani, F.; Ghione, G.. - ELETTRONICO. - (2021), pp. 36-39. (Intervento presentato al convegno 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD} tenutosi a Dallas, TX, USA nel 27-29 September 2021) [10.1109/SISPAD54002.2021.9592546].
Efficient TCAD Large-Signal temperature-dependent variability analysis of a FinFET power amplifier
Catoggio, E.;Guerrieri, S. Donati;Bonani, F.;Ghione, G.
2021
Abstract
We present an efficient approach to the temperature-dependent physics-based variability analysis of electron devices in Large Signal (LS) nonlinear conditions. The method extends, with negligible numerical overhead, the Green’s Function (GF) approach, already developed for the device LS noise and technological sensitivity, and allows to calculate the LS device response to the temperature variation from a nominal, “cold” condition with concurrent variations of technological parameters. As a demonstrator we show the T-dependent TCAD simulations of a FinFET-based class A power amplifier against device heating in conjunction with doping variations of the channel contact regions. More than 1 dB output power loss with 50 K temperature heating is demonstrated, while doping variations further affect the PA 1 dB compression point with a 1 dB input power spread.File | Dimensione | Formato | |
---|---|---|---|
SISPAD 2021.pdf
non disponibili
Descrizione: Articolo principale
Tipologia:
2a Post-print versione editoriale / Version of Record
Licenza:
Non Pubblico - Accesso privato/ristretto
Dimensione
1.68 MB
Formato
Adobe PDF
|
1.68 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
2021198591.pdf
accesso aperto
Descrizione: Versione dell'autore post-referee
Tipologia:
2. Post-print / Author's Accepted Manuscript
Licenza:
PUBBLICO - Tutti i diritti riservati
Dimensione
1.67 MB
Formato
Adobe PDF
|
1.67 MB | Adobe PDF | Visualizza/Apri |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
https://hdl.handle.net/11583/2936352