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EnglishWe present an efficient approach to the temperature-dependent physics-based variability analysis of electron devices in Large Signal (LS) nonlinear conditions. The method extends, with negligible numerical overhead, the Green’s Function (GF) approach, already developed for the device LS noise and technological sensitivity, and allows to calculate the LS device response to the temperature variation from a nominal, “cold” condition with concurrent variations of technological parameters. As a demonstrator we show the T-dependent TCAD simulations of a FinFET-based class A power amplifier against device heating in conjunction with doping variations of the channel contact regions. More than 1 dB output power loss with 50 K temperature heating is demonstrated, while doping variations further affect the PA 1 dB compression point with a 1 dB input power spread.
Efficient TCAD Large-Signal temperature-dependent variability analysis of a FinFET power amplifier / Catoggio, E.; Guerrieri, S. Donati; Bonani, F.; Ghione, G.. - ELETTRONICO. - (2021), pp. 36-39. ((Intervento presentato al convegno 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD} tenutosi a Dallas, TX, USA nel 27-29 September 2021 [10.1109/SISPAD54002.2021.9592546].
| Titolo: | Efficient TCAD Large-Signal temperature-dependent variability analysis of a FinFET power amplifier | |
| Autori: | ||
| Data di pubblicazione: | 2021 | |
| Abstract: | We present an efficient approach to the temperature-dependent physics-based variability analysis ...of electron devices in Large Signal (LS) nonlinear conditions. The method extends, with negligible numerical overhead, the Green’s Function (GF) approach, already developed for the device LS noise and technological sensitivity, and allows to calculate the LS device response to the temperature variation from a nominal, “cold” condition with concurrent variations of technological parameters. As a demonstrator we show the T-dependent TCAD simulations of a FinFET-based class A power amplifier against device heating in conjunction with doping variations of the channel contact regions. More than 1 dB output power loss with 50 K temperature heating is demonstrated, while doping variations further affect the PA 1 dB compression point with a 1 dB input power spread. | |
| ISBN: | 978-1-6654-0685-7 | |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| SISPAD 2021.pdf | Articolo principale | 2a Post-print versione editoriale / Version of Record | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia |
| 2021198591.pdf | Versione dell'autore post-referee | 2. Post-print / Author's Accepted Manuscript | PUBBLICO - Tutti i diritti riservati | Visibile a tuttiVisualizza/Apri |
http://hdl.handle.net/11583/2936352
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