statistiche ricercatore

Nazione	#
US - Stati Uniti d'America	637
IT - Italia	284
SG - Singapore	216
FR - Francia	152
CN - Cina	125
GB - Regno Unito	77
BR - Brasile	70
DE - Germania	70
KR - Corea	31
VN - Vietnam	26
HK - Hong Kong	24
IE - Irlanda	20
BE - Belgio	18
SE - Svezia	18
TR - Turchia	18
FI - Finlandia	15
CA - Canada	12
ID - Indonesia	12
IN - India	10
RU - Federazione Russa	10
RO - Romania	7
AR - Argentina	6
BG - Bulgaria	6
CH - Svizzera	6
BD - Bangladesh	5
UZ - Uzbekistan	5
AT - Austria	4
ES - Italia	4
IR - Iran	4
NL - Olanda	4
SN - Senegal	4
ZA - Sudafrica	4
DZ - Algeria	3
GR - Grecia	3
IQ - Iraq	3
JP - Giappone	3
MX - Messico	3
PL - Polonia	3
JO - Giordania	2
PK - Pakistan	2
UA - Ucraina	2
AE - Emirati Arabi Uniti	1
AL - Albania	1
AU - Australia	1
EC - Ecuador	1
EG - Egitto	1
HU - Ungheria	1
IL - Israele	1
KE - Kenya	1
KZ - Kazakistan	1
LA - Repubblica Popolare Democratica del Laos	1
LU - Lussemburgo	1
MA - Marocco	1
NP - Nepal	1
OM - Oman	1
PH - Filippine	1
PY - Paraguay	1
SK - Slovacchia (Repubblica Slovacca)	1
TH - Thailandia	1
TN - Tunisia	1
Totale	1.947

Nome	#
Electron-phonon interactions in low-dimensional carbon systems: superconductivity and charge-density waves	376
Control of bulk superconductivity via surface-bound electric fields in ion-gated niobium nitride thin films	214
Mapping multi-valley Lifshitz transitions induced by field-effect doping in strained MoS2 nanolayers	172
Electric field exfoliation and high-TC superconductivity in field-effect hole-doped hydrogenated diamond (111)	163
Anomalous screening of an electrostatic field at the surface of niobium nitride	151
Two-dimensional hole transport in ion-gated diamond surfaces: A brief review	151
Proximity two bands Eliashberg theory of electrostatic field-effect-doping in a superconducting film of MgB2	147
Towards electric-field-induced superconductivity in ion-gated diamond surfaces	145
Migdal-Eliashberg theory of multi-band high-temperature superconductivity in field-effect-doped hydrogenated (111) diamond	138
Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels	129
Field-effect–induced superconductivity in surfaces of tetrahedrally coordinated semiconductors: The case of (111) hydrogenated silicon	124
Theoretical explanation of electric field‐induced superconductive critical temperature shifts in Indium thin films	96
Totale	2.006

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	125	0	0	0	0	0	0	12	17	23	51	15	7
2021/2022	214	18	18	13	8	7	16	4	15	10	18	29	58
2022/2023	317	31	54	11	29	36	42	18	16	24	11	26	19
2023/2024	127	24	6	8	6	4	15	12	14	1	3	23	11
2024/2025	427	6	62	20	54	45	36	40	44	38	25	31	26
2025/2026	488	73	38	115	76	72	48	66	0	0	0	0	0
Totale													2.006

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