statistiche ricercatore

Nazione	#
US - Stati Uniti d'America	596
IT - Italia	283
SG - Singapore	202
FR - Francia	150
CN - Cina	122
GB - Regno Unito	75
DE - Germania	70
BR - Brasile	66
KR - Corea	31
HK - Hong Kong	20
IE - Irlanda	20
BE - Belgio	18
SE - Svezia	18
TR - Turchia	18
VN - Vietnam	18
FI - Finlandia	15
ID - Indonesia	12
CA - Canada	11
IN - India	10
RU - Federazione Russa	10
RO - Romania	7
AR - Argentina	6
BG - Bulgaria	6
CH - Svizzera	6
UZ - Uzbekistan	5
AT - Austria	4
BD - Bangladesh	4
ES - Italia	4
IR - Iran	4
NL - Olanda	4
SN - Senegal	4
GR - Grecia	3
IQ - Iraq	3
JP - Giappone	3
MX - Messico	3
ZA - Sudafrica	3
DZ - Algeria	2
JO - Giordania	2
PL - Polonia	2
UA - Ucraina	2
AE - Emirati Arabi Uniti	1
AL - Albania	1
AU - Australia	1
EC - Ecuador	1
EG - Egitto	1
HU - Ungheria	1
IL - Israele	1
KE - Kenya	1
LA - Repubblica Popolare Democratica del Laos	1
LU - Lussemburgo	1
MA - Marocco	1
NP - Nepal	1
OM - Oman	1
PH - Filippine	1
PK - Pakistan	1
PY - Paraguay	1
SK - Slovacchia (Repubblica Slovacca)	1
TH - Thailandia	1
TN - Tunisia	1
Totale	1.861

Nome	#
Electron-phonon interactions in low-dimensional carbon systems: superconductivity and charge-density waves	372
Control of bulk superconductivity via surface-bound electric fields in ion-gated niobium nitride thin films	203
Electric field exfoliation and high-TC superconductivity in field-effect hole-doped hydrogenated diamond (111)	155
Mapping multi-valley Lifshitz transitions induced by field-effect doping in strained MoS2 nanolayers	150
Two-dimensional hole transport in ion-gated diamond surfaces: A brief review	147
Anomalous screening of an electrostatic field at the surface of niobium nitride	146
Proximity two bands Eliashberg theory of electrostatic field-effect-doping in a superconducting film of MgB2	141
Towards electric-field-induced superconductivity in ion-gated diamond surfaces	136
Migdal-Eliashberg theory of multi-band high-temperature superconductivity in field-effect-doped hydrogenated (111) diamond	133
Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels	124
Field-effect–induced superconductivity in surfaces of tetrahedrally coordinated semiconductors: The case of (111) hydrogenated silicon	120
Theoretical explanation of electric field‐induced superconductive critical temperature shifts in Indium thin films	93
Totale	1.920

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	155	0	0	0	0	0	30	12	17	23	51	15	7
2021/2022	214	18	18	13	8	7	16	4	15	10	18	29	58
2022/2023	317	31	54	11	29	36	42	18	16	24	11	26	19
2023/2024	127	24	6	8	6	4	15	12	14	1	3	23	11
2024/2025	427	6	62	20	54	45	36	40	44	38	25	31	26
2025/2026	402	73	38	115	76	72	28	0	0	0	0	0	0
Totale													1.920

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