PORTO @ Archivio Istituzionale della Ricerca

CATOGGIO, EVA
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
AS - Asia 1.460
NA - Nord America 1.229
EU - Europa 1.014
SA - Sud America 133
Continente sconosciuto - Info sul continente non disponibili 125
AF - Africa 27
OC - Oceania 1
Totale 3.989
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 1.184
IT - Italia 446
SG - Singapore 445
VN - Vietnam 349
CN - Cina 281
RU - Federazione Russa 147
BR - Brasile 113
KR - Corea 112
DE - Germania 103
FR - Francia 98
HK - Hong Kong 84
GB - Regno Unito 54
IN - India 51
BE - Belgio 50
TR - Turchia 22
CA - Canada 21
ID - Indonesia 19
FI - Finlandia 18
IE - Irlanda 18
CH - Svizzera 17
BD - Bangladesh 14
JP - Giappone 14
ES - Italia 13
JO - Giordania 11
IQ - Iraq 10
MX - Messico 10
PH - Filippine 10
NL - Olanda 9
TW - Taiwan 8
AR - Argentina 7
PT - Portogallo 7
AT - Austria 6
MA - Marocco 6
TH - Thailandia 6
UA - Ucraina 6
EC - Ecuador 5
PL - Polonia 5
BJ - Benin 4
EG - Egitto 4
LB - Libano 4
ZA - Sudafrica 4
CZ - Repubblica Ceca 3
JM - Giamaica 3
KE - Kenya 3
NI - Nicaragua 3
PK - Pakistan 3
SE - Svezia 3
AE - Emirati Arabi Uniti 2
DO - Repubblica Dominicana 2
GE - Georgia 2
HN - Honduras 2
IR - Iran 2
MY - Malesia 2
PE - Perù 2
PS - Palestinian Territory 2
PY - Paraguay 2
RO - Romania 2
RS - Serbia 2
SA - Arabia Saudita 2
SN - Senegal 2
UZ - Uzbekistan 2
XK - ???statistics.table.value.countryCode.XK??? 2
AL - Albania 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BO - Bolivia 1
BZ - Belize 1
CL - Cile 1
CO - Colombia 1
DZ - Algeria 1
EE - Estonia 1
GT - Guatemala 1
HU - Ungheria 1
IL - Israele 1
LT - Lituania 1
LV - Lettonia 1
LY - Libia 1
MT - Malta 1
NG - Nigeria 1
NP - Nepal 1
PR - Porto Rico 1
SV - El Salvador 1
TJ - Tagikistan 1
TN - Tunisia 1
UY - Uruguay 1
Totale 3.866
Salva come PNG Salva come JPEG
Città #
Singapore 261
Turin 182
San Jose 156
Ashburn 130
Hanoi 83
Ho Chi Minh City 82
Seoul 74
Council Bluffs 65
Los Angeles 55
Santa Clara 53
Beijing 51
Brussels 50
Boardman 47
Houston 43
Hong Kong 42
Dallas 40
Chandler 33
Hefei 33
The Dalles 30
Torino 30
Lauterbourg 27
Berlin 24
Frankfurt am Main 23
Milan 22
Jakarta 19
Ann Arbor 18
Dublin 18
Southend 18
Istanbul 17
Haiphong 16
Piscataway 16
Princeton 16
Rome 16
Fremont 14
New York 13
Phoenix 13
Stuttgart 13
Bern 11
Buffalo 11
Da Nang 11
Portsmouth 11
Menlo Park 10
Orem 10
Cesena 9
Lappeenranta 9
Seattle 9
Shanghai 9
Helsinki 8
Nuremberg 8
Tokyo 8
Baghdad 7
Chicago 7
Redmond 7
Can Tho 6
Chennai 6
Biella 5
Biên Hòa 5
Boston 5
Brasília 5
Denver 5
Grenoble 5
Mcallen 5
Rio de Janeiro 5
Warsaw 5
Woodbridge 5
Yubileyny 5
Amsterdam 4
Andover 4
Bari 4
Brescia 4
Brooklyn 4
Bắc Ninh 4
Campinas 4
Cincinnati 4
Cotonou 4
Dresden 4
Lisbon 4
Mexico City 4
Montreal 4
Montréal 4
Munich 4
New Delhi 4
Ocozocoautla de Espinosa 4
Philadelphia 4
Quito 4
Quận Ba 4
Redondo Beach 4
Silea 4
Toronto 4
Vienna 4
Bangkok 3
Bellaterra 3
Cagliari 3
Cheonan 3
Cuneo 3
Cusano Milanino 3
Desio 3
Frisco 3
Guangzhou 3
Hartford 3
Totale 2.181
Salva come PNG Salva come JPEG
Nome #
Technology CAD for Microwaves: From Devices to Circuit Performance: Technology CAD for Microwaves 297
Thermal modeling of RF FinFET PAs through temperature-dependent X-parameters extracted from physics-based simulations 252
Advanced modeling of nanoscale devices for analog applications 241
TCAD accurate modeling of trap-induced effects in GaN HEMTs 225
Efficient TCAD Temperature-dependent Large-Signal Simulation of a FinFET Power Amplifier 212
Efficient TCAD Thermal Analysis of Semiconductor Devices 210
Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Modeling Approaches 205
Multi-bias Thermal X-Parameter Model for Efficient Physics-Based FinFET Simulation in RF CAD Tools 198
Efficient TCAD Large-Signal temperature-dependent variability analysis of a FinFET power amplifier 192
Multibias TCAD Analysis of Trap Dynamics in GaN HEMTs 171
TCAD simulation of microwave circuits: The Doherty amplifier 163
TCAD Analysis of GaN HEMT Output Conductance Through Trap Rate Equation Green’s Functions 162
GaN HEMT trap-induced variability through concurrent noise and AC TCAD modelling 162
TCAD assisted design of the Doherty Power Amplifier 158
Spatial distribution of microwave device harmonic electrical variables through T-dependent TCAD simulations 158
TCAD-based Dynamic Thermal X-parameters for PA Self-Heating Analysis 152
Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Power Amplifier Design 149
Analysis of Doherty Power Amplifier Matching Assisted by Physics-Based Device Modelling 149
TCAD Modeling of GaN HEMT Output Admittance Dispersion through Trap Rate Equation Green’s Functions 140
TCAD analysis of GaN HEMT AC parameters through accurate solution of trap rate equations 132
Variability-aware MMIC design through multiphysics modelling 131
Synergic Exploitation of TCAD and Deep Neural Networks for Nonlinear FinFET Modeling 130
Totale 3.989
Salva come PNG Salva come JPEG
Categoria #
all - tutte 12.430
article - articoli 4.733
book - libri 0
conference - conferenze 7.088
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 24.251
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022270 0 0 0 8 33 7 5 8 38 28 82 61
2022/2023346 10 21 22 15 41 31 28 18 70 6 38 46
2023/2024408 39 50 43 46 34 38 28 18 18 20 57 17
2024/2025794 8 108 22 106 60 64 42 33 132 47 77 95
2025/20261.879 98 95 117 149 108 112 277 173 408 161 84 97
2026/2027249 56 53 90 50 0 0 0 0 0 0 0 0
Totale 3.989