TCAD simulations are used to extract an accurate temperature-dependent X-parameter active device model, which describes it as instantaneously dependent on the junction temperature, and hence represents the ideal framework to analyze device self-heating. Once exported from TCAD into EDA tools, X-parameters are coupled to a dynamic thermal impedance, leading to a compact and efficient device black-box model, allowing for circuit-level analysis of thermal memory effects in microwave circuits, like Power Amplifiers (PAs), even in presence of complex modulated-signal excitation. In particular, we focus on the thermal analysis of a class-A PA at E-band based on a 54 nm Si FinFET. The accuracy of the temperature-dependent X-parameter model is demonstrated first by comparing circuit simulations with TCAD results in continuous wave. Then we extend the analysis to pulsed modulated operation, highlighting thermal dynamic effects as a function of the pulse period.

TCAD-based Dynamic Thermal X-parameters for PA Self-Heating Analysis / Donati Guerrieri, S.; Ramella, C.; Catoggio, E.; Bonani, F.. - ELETTRONICO. - (2022), pp. 13-16. ((Intervento presentato al convegno 2022 17th European Microwave Integrated Circuits Conference (EuMIC) tenutosi a Milano (Italy) nel 26-27 September 2022 [10.23919/EuMIC54520.2022.9923459].

TCAD-based Dynamic Thermal X-parameters for PA Self-Heating Analysis

Donati Guerrieri, S.;Ramella, C.;Catoggio, E.;Bonani, F.
2022

Abstract

TCAD simulations are used to extract an accurate temperature-dependent X-parameter active device model, which describes it as instantaneously dependent on the junction temperature, and hence represents the ideal framework to analyze device self-heating. Once exported from TCAD into EDA tools, X-parameters are coupled to a dynamic thermal impedance, leading to a compact and efficient device black-box model, allowing for circuit-level analysis of thermal memory effects in microwave circuits, like Power Amplifiers (PAs), even in presence of complex modulated-signal excitation. In particular, we focus on the thermal analysis of a class-A PA at E-band based on a 54 nm Si FinFET. The accuracy of the temperature-dependent X-parameter model is demonstrated first by comparing circuit simulations with TCAD results in continuous wave. Then we extend the analysis to pulsed modulated operation, highlighting thermal dynamic effects as a function of the pulse period.
978-2-87487-070-5
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2972808