CATOGGIO, EVA
 Distribuzione geografica
Continente #
EU - Europa 169
NA - Nord America 28
AS - Asia 12
AF - Africa 4
OC - Oceania 2
Totale 215
Nazione #
IT - Italia 127
US - Stati Uniti d'America 24
GB - Regno Unito 20
FR - Francia 8
IN - India 7
IE - Irlanda 5
GH - Ghana 4
MX - Messico 2
NL - Olanda 2
PT - Portogallo 2
AU - Australia 1
CA - Canada 1
CH - Svizzera 1
CN - Cina 1
DE - Germania 1
DK - Danimarca 1
HK - Hong Kong 1
HN - Honduras 1
IL - Israele 1
MY - Malesia 1
NZ - Nuova Zelanda 1
SE - Svezia 1
TR - Turchia 1
UA - Ucraina 1
Totale 215
Città #
Turin 59
Torino 21
Southend 18
Fleming Island 7
Nuoro 6
Dublin 5
Accra 4
Borgaro Torinese 2
Kolkata 2
Lake Forest 2
Mumbai 2
Rome 2
Ankara 1
Ashburn 1
Auckland 1
Aveiro 1
Bologna 1
Bordeaux 1
Borås 1
Brisbane 1
Casale Monferrato 1
Central 1
Council Bluffs 1
Delhi 1
Eindhoven 1
Fairfield 1
Glasgow 1
Hanover 1
Jiaxing 1
Kuala Lumpur 1
Le Perreux-sur-Marne 1
Leatherhead 1
Livorno 1
Marseille 1
Milan 1
Mississauga 1
Naaldwijk 1
New Delhi 1
Renate 1
San Mateo 1
Stafa 1
Tel Aviv 1
Trieste 1
Varese 1
Warangal 1
Totale 163
Nome #
Efficient TCAD Thermal Analysis of Semiconductor Devices, file e384c433-52e3-d4b2-e053-9f05fe0a1d67 56
Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Modeling Approaches, file e384c434-6278-d4b2-e053-9f05fe0a1d67 32
Efficient TCAD Large-Signal temperature-dependent variability analysis of a FinFET power amplifier, file e384c434-2abf-d4b2-e053-9f05fe0a1d67 25
Thermal modeling of RF FinFET PAs through temperature-dependent X-parameters extracted from physics-based simulations, file e384c434-8659-d4b2-e053-9f05fe0a1d67 13
Advanced modeling of nanoscale devices for analog applications, file aae017b9-fcd6-4ea3-88a9-b594caa157bf 9
TCAD simulation of microwave circuits: The Doherty amplifier, file c07a2197-2507-42a4-8c1a-d86bf0403e4e 7
Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Power Amplifier Design, file 3aa7399d-24a9-4c2a-891a-677b3da729ad 6
Synergic Exploitation of TCAD and Deep Neural Networks for Nonlinear FinFET Modeling, file a6959c7a-7909-4eb5-8050-6f1a71cf174a 6
Multi-bias Thermal X-Parameter Model for Efficient Physics-Based FinFET Simulation in RF CAD Tools, file dcf075d0-978b-4b57-b86a-012350f5b12b 6
Multi-bias Thermal X-Parameter Model for Efficient Physics-Based FinFET Simulation in RF CAD Tools, file 3276604f-b01d-479a-b6d6-82fcd215ed18 5
Variability-aware MMIC design through multiphysics modelling, file 9bb7f2e6-4110-4432-8e22-042f91320346 5
Efficient TCAD Large-Signal temperature-dependent variability analysis of a FinFET power amplifier, file e384c434-117a-d4b2-e053-9f05fe0a1d67 5
Thermal modeling of RF FinFET PAs through temperature-dependent X-parameters extracted from physics-based simulations, file e384c434-8658-d4b2-e053-9f05fe0a1d67 4
Synergic Exploitation of TCAD and Deep Neural Networks for Nonlinear FinFET Modeling, file ee225a10-2f7f-4e7c-af08-27be57b48791 4
Spatial distribution of microwave device harmonic electrical variables through T-dependent TCAD simulations, file ee22bfd6-8fe4-4710-90cd-f3aadf5a1c92 4
TCAD Modeling of GaN HEMT Output Admittance Dispersion through Trap Rate Equation Green’s Functions, file c36ea52b-fdfd-4ced-a505-aa8e361f5d89 3
Advanced modeling of nanoscale devices for analog applications, file c73967d9-9f6c-4c4f-96d2-4d8ddf54026c 3
Efficient TCAD Temperature-dependent Large-Signal Simulation of a FinFET Power Amplifier, file e384c434-e7d2-d4b2-e053-9f05fe0a1d67 3
TCAD simulation of microwave circuits: The Doherty amplifier, file 071c094e-df63-4b46-8993-d4e08385c09b 2
Variability-aware MMIC design through multiphysics modelling, file 1fb6d705-8915-4056-abd3-eadff41c6cec 2
Analysis of Doherty Power Amplifier Matching Assisted by Physics-Based Device Modelling, file 3a8a739c-a19c-4ad8-9648-220827fddfeb 2
TCAD analysis of GaN HEMT AC parameters through accurate solution of trap rate equations, file 5293628c-48fe-4b31-9ce0-4ee87b44ae32 2
Spatial distribution of microwave device harmonic electrical variables through T-dependent TCAD simulations, file 7fdcf0dc-b33a-4469-8638-bca6d0bb2c7f 2
Efficient TCAD Temperature-dependent Large-Signal Simulation of a FinFET Power Amplifier, file e384c434-e72d-d4b2-e053-9f05fe0a1d67 2
TCAD analysis of GaN HEMT AC parameters through accurate solution of trap rate equations, file f045a110-0762-4a07-8b1c-0e8795315d8d 2
TCAD-based Dynamic Thermal X-parameters for PA Self-Heating Analysis, file 6693da71-8ead-435b-9359-976b7c52d846 1
TCAD-based Dynamic Thermal X-parameters for PA Self-Heating Analysis, file a0a5e85b-1c8b-40c2-9cff-123d14c2f7b6 1
TCAD Analysis of GaN HEMT Output Conductance Through Trap Rate Equation Green’s Functions, file a4cb3abc-1506-4d83-98f3-1762d47daa64 1
Efficient TCAD Thermal Analysis of Semiconductor Devices, file e384c434-1adf-d4b2-e053-9f05fe0a1d67 1
TCAD Analysis of GaN HEMT Output Conductance Through Trap Rate Equation Green’s Functions, file e52a1731-fc2a-497f-a5e3-4a760a1146a0 1
Totale 215
Categoria #
all - tutte 505
article - articoli 222
book - libri 0
conference - conferenze 236
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 963


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20213 0 0 0 0 0 0 0 0 0 0 1 2
2021/202286 3 1 2 4 7 5 6 7 10 6 24 11
2022/202392 9 2 11 4 6 5 14 9 13 2 7 10
2023/202434 2 8 8 3 10 3 0 0 0 0 0 0
Totale 215