The presence of defects in GaN-based LEDs is frequently associated with the efficiency droop. It is therefore interesting to study the sub-threshold diode current, where nonradiative recombination effects appear more evident. In this work, we reproduce the high ideality factors observed in the I-V characteristics of GaN-based LEDs by means of a quantum corrected drift-diffusion model based on the solution of the Schroedinger equation. Our results indicate that, in highly defective structures, the anomalous characteristics cannot be entirely attributed to trap-assisted tunneling as previously assumed. We conclude that the unexpectedly large ideality factors observed in GaN-based LEDs can be explained by extending the conventional theory of SRH theory of isolated recombination centers to the case of coupled defects.
Subthreshold characteristics of GaN-based LEDs: trap-assisted tunneling and coupled defects / Mercinelli, Francesco; Tibaldi, Alberto; Goano, Michele; Bertazzi, Francesco. - ELETTRONICO. - (2023), pp. 85-86. (Intervento presentato al convegno 23rd International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2023) tenutosi a Turin, Italy nel 18 - 21 September 2023) [10.1109/NUSOD59562.2023.10273542].
Subthreshold characteristics of GaN-based LEDs: trap-assisted tunneling and coupled defects
Francesco Mercinelli;Alberto Tibaldi;Michele Goano;Francesco Bertazzi
2023
Abstract
The presence of defects in GaN-based LEDs is frequently associated with the efficiency droop. It is therefore interesting to study the sub-threshold diode current, where nonradiative recombination effects appear more evident. In this work, we reproduce the high ideality factors observed in the I-V characteristics of GaN-based LEDs by means of a quantum corrected drift-diffusion model based on the solution of the Schroedinger equation. Our results indicate that, in highly defective structures, the anomalous characteristics cannot be entirely attributed to trap-assisted tunneling as previously assumed. We conclude that the unexpectedly large ideality factors observed in GaN-based LEDs can be explained by extending the conventional theory of SRH theory of isolated recombination centers to the case of coupled defects.File | Dimensione | Formato | |
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https://hdl.handle.net/11583/2982758