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EnglishNowadays, radiation-induced Single Event Transients are a leading cause of critical errors in CMOS nanometric integrated circuits. In this work, we propose a workflow for analyzing and mitigating nanometric CMOS integrated circuits to radiation-induced transient errors. The analysis phase starts with the developed Rad-Ray tool for mimicking the passage of the radiation particles through the silicon matter of the cells to identify the features of the generated transient pulses. The tool is integrated with an electrical simulator to evaluate the dynamic behavior of the transient pulses inserted and propagated in the circuit. A tunable mitigation solution is proposed by inserting the filtering block before the storage element, tuned based on the duration and amplitude of the expected transient pulse, identified in the analysis phase. Experimental results are achieved by applying the proposed approach on the 45 nm Flip-Flop component available in the FreePDK design kit, comparing the Dynamic Error Rate for the original Flip-Flop and the mitigated one which shows a reduction of sensitivity up to 56% with respect of the original version, with negligible degradation of performances.
In-Circuit Mitigation Approach of Single Event Transients for 45nm Flip-Flops / Azimi, Sarah; De Sio, Corrado; Sterpone, Luca. - ELETTRONICO. - (2020), pp. 1-6. ((Intervento presentato al convegno 26th IEEE International Symposium on On-Line Testing and robust System Design (IOLT 2020) nel 13-15 July 2020 [10.1109/IOLTS50870.2020.9159738].
| Titolo: | In-Circuit Mitigation Approach of Single Event Transients for 45nm Flip-Flops | |
| Autori: | ||
| Data di pubblicazione: | 2020 | |
| Abstract: | Nowadays, radiation-induced Single Event Transients are a leading cause of critical errors in CMO...S nanometric integrated circuits. In this work, we propose a workflow for analyzing and mitigating nanometric CMOS integrated circuits to radiation-induced transient errors. The analysis phase starts with the developed Rad-Ray tool for mimicking the passage of the radiation particles through the silicon matter of the cells to identify the features of the generated transient pulses. The tool is integrated with an electrical simulator to evaluate the dynamic behavior of the transient pulses inserted and propagated in the circuit. A tunable mitigation solution is proposed by inserting the filtering block before the storage element, tuned based on the duration and amplitude of the expected transient pulse, identified in the analysis phase. Experimental results are achieved by applying the proposed approach on the 45 nm Flip-Flop component available in the FreePDK design kit, comparing the Dynamic Error Rate for the original Flip-Flop and the mitigated one which shows a reduction of sensitivity up to 56% with respect of the original version, with negligible degradation of performances. | |
| ISBN: | 978-1-7281-8187-5 | |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| IOLTS2020_CameraReady.pdf | Camera Ready _ IOLTS 2020 | 2. Post-print / Author's Accepted Manuscript | PUBBLICO - Tutti i diritti riservati | Visibile a tuttiVisualizza/Apri |
| In-Circuit_Mitigation_Approach_of_Single_Event_Transients_for_45nm_Flip-Flops.pdf | 2a Post-print versione editoriale / Version of Record | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia |
http://hdl.handle.net/11583/2842252
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